Preparation method of semiconductor device

A technology for semiconductors and devices, applied in the field of semiconductor preparation technology, can solve the problems of low preparation efficiency, long preparation time of semiconductor devices, complicated lithography process flow, etc.

Active Publication Date: 2021-05-14
度亘激光技术(苏州)有限公司
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Photolithography is a process often used in the preparation of semiconductor devices. It belongs to a main process in the production of planar transistors and integrated circuits. The general photolithography process has to go through silicon wafer surface cleaning and drying, primer coating, spin coating photoresist, soft baking , alignment exposure, post-baking, development, hard-baking, etching, detectio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of semiconductor device
  • Preparation method of semiconductor device
  • Preparation method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027]The technical solutions in the present application embodiment will be described in conjunction with the drawings in the present application embodiment.

[0028]In the description of the present application, it is to be explained that the orientation or positional relationship indicated by the term "inside", "outside" is based on the orientation or positional relationship shown in the drawings, or is usually placed when the application product is used. The orientation or positional relationship is intended to facilitate the description of the present application and simplified description, rather than indicating or implying that the device or element must have a specific orientation, and is not understood to limit the limitations of the present application. Moreover, the term "first", "second" or the like is only used to distinguish the description, and cannot be understood as an indication or implies relative importance.

[0029]It will also be noted that the term "set", "connection...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method of a semiconductor device, and relates to the technical field of a semiconductor preparation process, and the method comprises the steps of: covering a wafer with a non-photosensitive substance layer; covering the non-photosensitive substance layer with a photosensitive substance layer; forming preset patterns on the photosensitive substance layer and the non-photosensitive substance layer through a one-time composition process to expose the surface of the wafer, wherein a first opening is formed in the photosensitive substance layer, a second opening is formed in the non-photosensitive substance layer, and the caliber of the first opening is smaller than that of the second opening; forming a first depth groove in the exposed wafer; forming a second depth groove in the groove bottom of the first depth groove, wherein the width of the second depth groove is smaller than or equal to that of the first depth groove; and removing the remaining non-photosensitive substance layer and photosensitive substance layer on the wafer. The semiconductor device can be formed through a one-time composition process, thereby saving the photoetching step, reducing the step of removing photoresist, and improving the preparation efficiency by reducing the photoetching times.

Description

technical field [0001] The present application relates to the technical field of semiconductor preparation technology, in particular to a method for preparing a semiconductor device. Background technique [0002] Photolithography is a process often used in the preparation of semiconductor devices. It belongs to a main process in the production of planar transistors and integrated circuits. The general photolithography process has to go through silicon wafer surface cleaning and drying, primer coating, spin coating photoresist, soft baking , alignment exposure, post-baking, developing, hard-baking, etching, detection and other processes, the visible lithography process is relatively complicated, and many steps are required to complete a lithography. For the formation of complex patterns in semiconductor devices, sometimes more than two photolithography steps are required to obtain the final pattern. In this way, the photolithography process makes the preparation of semiconduc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/308
CPCH01L21/3086
Inventor 浦栋惠利省李靖杨国文
Owner 度亘激光技术(苏州)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap