Manufacturing method of bidirectional power device

A technology of bidirectional power device and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device and other directions, can solve the problems of high power consumption, low device conduction efficiency, etc., to improve performance, reduce bulk resistance, The effect of reducing the area

Pending Publication Date: 2021-02-02
HANGZHOU SILAN MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the MOS process using a planar gate structure requires sufficient area to meet higher withstand voltage requ

Method used

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  • Manufacturing method of bidirectional power device
  • Manufacturing method of bidirectional power device
  • Manufacturing method of bidirectional power device

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Embodiment Construction

[0052] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0053] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0054] If it is intended to describe the situation of being directly on a...

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Abstract

The invention discloses a manufacturing method of a bidirectional power device. The manufacturing method comprises the following steps: forming a first doped region in a semiconductor layer; forming aplurality of trenches in a first trench region, wherein the plurality of trenches of the first trench region are located in the first doped region and divide the first doped region into alternating first-type sub-doped regions and second-type sub-doped regions; forming a gate dielectric layer covering the side walls of the lower parts of the plurality of trenches of the first trench region; forming a shielding dielectric layer covering the side walls of the upper parts of the plurality of trenches of the first trench region; and forming gate conductors respectively in contact with the gate dielectric layer and the shielding dielectric layer in the plurality of trenches of the first trench region, wherein the gate conductors comprise control gates and shielding gates which are connected with each other, the control gates are in contact with the gate dielectric layer, and the shielding gates are in contact with the shielding dielectric layer. According to the manufacturing method, the first doped region is divided into the first-type sub-doped regions and the second-type sub-doped regions which are alternated by the trenches to form a source region and a drain region of the bidirectional power device, so the area of the device is reduced.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and more specifically, to a method for manufacturing a bidirectional power device. Background technique [0002] Bidirectional power devices are widely used in charging devices with a secondary charging function. Taking the lithium battery charging and discharging device as an example, when the lithium battery charging and discharging device continues to supply power to the terminal equipment to a certain extent, it is necessary to prevent the lithium battery from over-discharging to prevent the terminal equipment from stopping, and to charge the lithium battery in time. In the process of charging the lithium battery, the lithium battery also needs to supply power to the terminal equipment, and at the same time prevent the lithium battery from being overcharged. Therefore, in order to manage and control the charge and discharge state of the lithium battery, a charge...

Claims

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Application Information

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IPC IPC(8): H01L21/8232H01L29/06H01L27/02
CPCH01L21/8232H01L21/823878H01L29/0603H01L29/0615H01L29/0684H01L27/0203H01L29/66621H01L29/7834H01L29/4236H01L29/42368H01L29/1087
Inventor 杨彦涛张邵华
Owner HANGZHOU SILAN MICROELECTRONICS
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