107results about How to "Lower bulk resistance" patented technology

An organic light-emitting diode including a first electrode; a second electrode facing the first electrode; an emission layer interposed between the first electrode and the second electrode; a first hole transport layer including a first hole transporting compound; a second hole transport layer including a second hole transporting compound, the first and second hole transport layers being interposed between the first electrode and the emission layer; an electron transport layer interposed between the emission layer and the second electrode; a first mixing layer interposed between the first electrode and the first hole transport layer, contacting the first hole transport layer, and including the first hole transporting compound and a first cyano group-containing compound; and a second mixing layer interposed between the first electrode and the second hole transport layer, contacting the second hole transport layer, and including the second hole transporting compound and a second cyano group-containing compound.

The invention relates to technology for manufacturing a selective emitter junction solar cell by a printed phosphorous source one-step diffusion method. The method comprises the following steps of: cleaning and texturing a silicon wafer, performing screen printing of phosphorous-containing nano Si slurry, drying at the temperature of between 200 and 350 DEG C for about 20 minutes, and removing the solvent to obtain a phosphorous-containing oxidation layer with the thickness of 30 to 100nm; implementing BOE and RCA cleaning to remove 70 percent of surface phosphorous slurry before diffusion; putting the silicon wafer into a diffusion furnace, adding a POCL3 air source, heating to between 800 and 1,000 DEG C, forming re-diffusion at a grid line of the phosphorous-containing nano slurry on the silicon wafer to form a higher surface concentration-heavily doped region, and forming a shallow diffusion region in other areas. By adopting the screen printing of the phosphorous-containing nano slurry, the phosphorous-containing nano slurry is heated at high temperature for diffusion, forms the heavily doped region at a contact position with the grid line and forms a lightly doped region in other areas. The technology has the efficiency of over 18.5 percent on the premise of better controlling the diffusion uniformity.

The invention discloses a method for preparing an antistatic filter material. The method includes the steps: preparing a plain felt; preparing treatment agents; treating after dipping; and drying to obtain the antistatic filter material. According to the method, the plain felt of the filter material is dipped in glue liquor with nano graphite powder, so that low resistance is formed inside the filter material and on the surface of the filter material. The antistatic filter material is low in surface and body resistance and fine in temperature and corrosion resistance, and the application condition of the filter material is greatly expanded. Electrostatic accumulation of the filter material in the use process can be effectively reduced, and the risk of detonation and even explosion of flammable and explosive products such as pulverized coal and coal gas in the filtering process due to electrostatic discharge sparking is avoided.

The invention discloses silicon carbide ceramic with adjustable resistance and a preparation method thereof. The ceramic material mainly comprises a silicon carbide phase as a main phase, boron carbide as a sintering aid phase, and a carbon phase as a conductive phase, and the ceramic material can be prepared and has the bulk resistivity adjustable from 10<-2> to 10<8> Omega.cm. The silicon carbide ceramic has a density of 3.00 to 3.20 g/cm<3>. The core of the method is to coat the surface of silicon carbide raw material powder with a graphene-based material layer, and to adjust the content ofthe conductive phase in the silicon carbide ceramic to obtain the silicon carbide ceramic with adjustable bulk resistivity.

The invention relates to lead-free electrocondution slurry used for a crystalline silicon solar cell back electrode. The lead-free electrocondution slurry used for the crystalline silicon solar cell back electrode consists of the following components in percentage by weight: 40-70wt% of silver plating copper powder, 2-10wt% of inorganic lead-free glass powder and 25-50wt% of organic carrier, wherein the organic carrier is the mixture of solvent, thickening agent and additive, and the prepared electrocondution slurry printing back electrode has the advantages of big thickness, small bulk resistance, excellent soldering resistance, strong welding adhesive force and silver ion migration resistance. Meanwhile, after cell pieces are subjected to series welding, an assembly has the advantages of higher stability and stronger anti-aging capability.

The invention discloses a method for manufacturing a body-contact structure of a partially depleted SOI MOSFET, which comprises the following steps: selecting a P<100>SOI epitaxial wafer and subjecting the SOI epitaxial wafer to primary Trench corrosion; performing secondary Trench corrosion to form an isolation layer between a source leading-out end and a body leading-out end and preserving a space between the bottom of a trench and a BOX layer to preserve a body leading-out channel for lateral body contact; stripping SiN completely, growing a SiO2 mask film and etching the SiO2 mask film to form injection windows of two local buried oxide layers; injecting the local buried oxide layers to form local buried oxide layers under source and drain regions; forming an active region by photoetching, performing tuned grid injection twice, controlling the thickness of a silicon film by sacrificial oxidation, growing gate oxide, depositing polysilicon, etching a polysilicon gate, performing LDD injection and side wall isolation, performing source and drain end injection to form a drain end and a source end, performing body leading-out end injection, growing source and drain silicide and performing PMD and planarization; and photoetching and etching contact holes, depositing a metal layer to form a pad layer and alloy, and performing back treatment.

The invention relates to a manufacturing method of an N-type TOPCon solar cell. The manufacturing method comprises the following steps: a, double-sided texturing; b, single-sided spin coating; c, single-sided oxidation: forming a boron-containing silicon oxide layer on a spin coating surface; d, forming a heavily doped region substrate and a lightly doped region substrate: forming an organic masklayer for protecting a heavily doped region at a position corresponding to the metal gate line by using a mask mode, completely removing the boron-containing silicon oxide layer and the boron source outside the coverage area of the organic mask layer by using HF, and then removing the organic mask layer; and e, heavy doping and light doping: specifically, completely pushing the spin-coated boron source into the silicon substrate through a tubular low-pressure diffusion method, forming a heavy doping region is formed, carrying out whole-surface source-through deposition to form a lightly dopedregion, and finally, carrying out high-temperature oxidation to form a BSG layer with the thickness of 80-100nm, and then carrying out normal subsequent processes. According to the invention, a boronselective emitter can obtain higher photoelectric conversion efficiency, so that the conversion efficiency of the solar cell is improved.

The invention discloses a P type transverse double-dispersion MOS pipe capable of reducing conduction resistance, and belongs to the technical field of semiconductor devices. The P type transverse double-dispersion MOS pipe capable of reducing conduction resistance comprises a P type substrate, an N embedded layer, a P type epitaxial layer, a first active area, a second active area, a third active area, a fourth active area, a fifth active area, field areas arranged between the active areas, a deep N trap, a shallow P trap, an N+ injection diffusion area, a shallow N trap, P+ injection diffusion area, and a P type injection layer which is between the shallow P trap and a back gate N trap area. With the adoption of the P type transverse double-dispersion MOS pipe, the conduction resistance is reduced while pressure resistance is ensured, and moreover, the area of a device is reduced.

The invention relates to a two-way ultralow capacitance TVS (Transient Voltage Suppressor) and a production method thereof. The TVS comprises a semiconductor substrate of a first conductive type, a first epitaxial layer of a second conductive type, a third epitaxial layer of the first conductive type, a first buried layer of the second conductive type, a first doped region of the second conductive type, a second doped region of the first conductive type, a first groove, a second groove, a first insulating medium, a third groove and an active region, wherein the first buried layer is formed between the first epitaxial layer and the third epitaxial layer; the first doped region is formed by being opposite to the first buried layer in the third epitaxial layer; the second doped region is formed in the third epitaxial layer and is not opposite to the first buried layer; the first groove extends to the inside of the semiconductor substrate from the surface of the third epitaxial layer; the second groove extends from the surface of the third epitaxial layer and penetrates through the third epitaxial layer; the first groove and the second groove are filled with the first insulating medium; the third groove extends from the surface of the third epitaxial layer and penetrates through the first buried layer to the inside of the first epitaxial layer; the active region is formed by annealing in-situ polycrystalline silicon loaded in the third groove.

The invention discloses a method for preparing an antistatic filter material with graphite powder. The method comprises the steps of preparing a plain felt, preparing a treatment agent: as for the plain felt steeped with the treatment agent, attaching nanoscale graphite powder onto the surface of the filter material in a spraying manner, drying: allowing the filter felt with the surface attached with the nanoscale graphite powder to enter an oven for preliminary drying and baking by the action of traction of the oven, drying the surface of the filter felt, removing redundant water in the filter felt, and obtaining the antistatic filter material. According to the method, the nanoscale graphite powder is sprayed onto the filter material plain felt, so that low resistance is formed in and on the surface of the filter material, the electrostatic accumulation of the filter material during use can be reduced effectively, and the risks of deflagration and even explosion of flammable and explosive products such as coal dust and coal gas during filter due to electrostatic discharge and sparking are avoided.

The invention relates to a polymer solar cell. The polymer solar cell sequentially comprises a cathode layer, a cathode interface layer, a photosensitive layer, an anode interface layer and an anode layer, wherein the cathode interface layer is an inorganic semiconductor nanocrystalline-conjugated polymer composite material layer. The cathode interface layer is specifically a ZnO-PFEP (phosphate ester polyfluorene) composite material layer. According to the polymer solar cell, the ZnO-PFEP composite cathode interface layer is arranged between the cathode layer and the photosensitive layer, and the mass ratio of ZnO to PFEP in the interface layer is controlled, so that the electrical conductivity of the cathode interface layer can be effectively increased, the bulk resistance of the cathode interface layer is reduced, the electron output resistance is decreased, furthermore, the short-circuit current, open-circuit voltage, fill factor and energy conversion efficiency of the cell are improved, and the electron transportation and collection are benefited.

The invention discloses an all-aluminum back surface field aluminum paste for a crystalline silicon solar cell and a preparation method thereof. The all-aluminum back surface field paste mainly comprises 60-70% aluminum powder, 5-10% nanometer metal oily solution, 1-10% inorganic binder, 10-20% organic binder, 5-30% organic solvent and 1-5% accessory ingredient. According to the aluminum paste prepared by the present invention, the back surface preparing process of an all-aluminum back surface field can be implemented preferably; moreover, the paste has great adhesive force, is easy to be better adhered to silver paste printed afterwards; meanwhile, the paste can be in good contact with a silicon chip through the nanometer metal oily solution added into the paste, the aluminum back surface is prevented from falling off, and good ohm contact can be formed, so that the photoelectric conversion efficiency is increased, and the economic benefits of enterprises are increased.

The invention discloses a heterojunction solar cell with a selective emitting electrode and a manufacturing method of the heterojunction solar cell. The heterojunction solar cell comprises an N-type crystalline silicon substrate, a front-face intrinsic amorphous silicon layer, a light doped P-type amorphous silicon layer, a front-face transparent conducting film layer, a front-face silver grid electrode, a heavy doped P-type amorphous silicon layer, a back-face intrinsic amorphous silicon layer, a heavy doped N-type amorphous silicon layer, a back-face transparent conducting film layer and a back-face silver grid electrode, and the N-type crystalline silicon substrate is provided with a front face and a back face. The heavy doped P-type amorphous silicon layer is adopted as the selective emitting electrode, is arranged at the contact position of the front-face transparent conducting film layer and the light doped P-type amorphous silicon layer and is provided with a plurality of heavy doped P-type amorphous silicon monomers, and the heavy doped P-type amorphous silicon monomers correspond to grid wires of the front-face silver grid electrode one to one and are located under the corresponding grid wires respectively. The heavy doped N-type amorphous silicon layer is deposited on the lower surface of the back-face intrinsic amorphous silicon layer. According to the solar cell and the manufacturing method, recombination of current carriers can be reduced, absorption of the emitting electrode on the current carriers is reduced, and therefore open-circuit voltages and short-circuit currents are improved, and the efficiency of the heterojunction cell is improved.

The invention discloses a silicon pole plate and a preparation method thereof. The silicon pole plate is made of a doped conductive crystalline silicon material and is provided with an internal cooling medium flow channel, a front reducing agent flow channel and/or a back oxidizing agent flow channel, wherein the internal cooling medium flow channel, the front reducing agent flow channel and/or the back oxidizing agent flow channel are/is respectively provided with a silicon pole plate inlet and outlet combination communicated with the internal cooling medium flow channel, the front reducing agent flow channel and/or the back oxidizing agent flow channel. Compared with a metal pole plate, a graphite pole plate or a composite material pole plate in the prior art, the silicon pole plate provided by the invention has better advantages in the aspects of service life, cost, efficiency and power density, and undoubtedly has great significance and a core promotion effect on the large-batch industrialization process of fuel cells.

The invention discloses a preparation method of a dacron fabric compound antistatic agent and belongs to the technical field of textile. The preparation method comprises the following steps: firstly, dropwise adding absolute ethyl alcohol and phosphorus pentoxide into a flask; mixing and stirring the mixture and heating and sealing the mixture for stirring reaction; after reaction, dropwise adding deionized water and stirring the mixture to obtain a reaction liquid 1; then adding dimethyl diallyl ammonium chloride and the like into the flask; dropwise adding normal butanol; adjusting the pH value by using sodium hydroxide to obtain a reaction liquid 2; then adding dimethyl diallyl ammonium chloride and the like into a three-mouth flask; stirring the mixture and adding ammonium persulfate to induce a reaction; then supplementing glycidyl acrylate and the like; after reaction, obtaining a reaction liquid 3; and mixing the reaction liquid 2 with the reaction liquid 3 to obtain the dacron fabric compound antistatic agent. The compound antistatic agent prepared by the method does not change color if being used at a high temperature, is stable in performance, and not only can remarkably improve the antistatic performance of the dacron fabric, is lasting in antistatic property, but also is non-irritant and healthy and safe.