17results about How to "Improve RF performance" patented technology

The invention relates to a heat dissipation optimization method and system for a radio frequency front-end module and related equipment. The method comprises the following steps: acquiring a layout of a power amplifier in the radio frequency front-end module; continuously dividing the layout into a plurality of temperature regions according to the thermal performance of the power amplifier; obtaining an original spacing between transistors in the power amplifier; according to the original spacing, transistor optimized spacing between the transistors in the different temperature areas is obtained again; rearranging the transistors of the power amplifier according to the optimized intervals of the transistors to obtain an optimized layout; and obtaining the optimized heat dissipation optimization radio frequency front-end module according to the optimized layout. According to the invention, the layout of the transistors in the power amplifier is adjusted, so that the distance between the transistors with relatively high heat is enlarged, and the radio frequency performance of the radio frequency front-end module is improved.

The present invention proposes a module based on a three-dimensional stacking structure and a preparation method thereof, wherein the structure comprises: an upper circuit substrate, an intermediate layer, a lower circuit substrate and a shell substrate are stacked in sequence to form a module based on a three-dimensional stacking structure; the intermediate layer is composed of a filling material and a solder ball array, the solder ball array is vertically interconnected between the upper circuit substrate and the lower circuit substrate, and the upper circuit substrate and the lower circuit substrate are covered with a filling material; if the filling material is a conductive material, an annular prefabricated block for preventing signal mutual interference between solder balls and preventing non-grounded solder ball signal short circuit is provided outside the non-grounded solder ball. The present invention fills conductive material between two circuit substrates of a module based on a three-dimensional stacking structure, so that the grounding of the upper circuit substrate is better and the radio frequency performance is high, and the isolation between the circuit substrates is ensured by using the solder ball array, thereby improving the module's ability to suppress electromagnetic interference.

The invention discloses a coil device with radio frequency and wireless charging functions and an earphone charging box, the coil device comprises a coil module, a wireless charging module and a radio frequency module, the coil module comprises a coil and a switcher, the switcher comprises a first connecting end, a second connecting end and a third connecting end, the first connecting end is connected with the coil, the second connecting end is connected with the wireless charging module, and the third connecting end is connected with the wireless charging module. The switcher is used for switching the first connecting end to be communicated with the second connecting end or the third connecting end; the wireless charging module comprises a wireless charging controller, and the wireless charging controller is used for transmitting and receiving handshake signals through the second connecting end and outputting current signals input by the first signal end to the power supply output end; the radio frequency module comprises a radio frequency controller, and the radio frequency controller is used for transmitting and receiving a radio frequency signal through the third connecting end. According to the coil device with the radio frequency and wireless charging functions, the radio frequency performance can be improved while the design of a radio frequency antenna is reduced, and the overall structure of the coil device is optimized.

The present invention relates to the field of wireless communication technology, and provides a common input low noise amplifier and radio frequency chip, including a common input port selection module, a first amplifier module, a second amplifier module, a first input switch module, a second input switch module, a first output matching module and a second output matching module; the input end of the common input port selection module is used to receive a control signal, and the output end of the common input port selection module is used to control the input end of the first amplifier module or the second amplifier module to select and output a signal; the input end of the first input switch module is used to access the first input signal, and the output end of the first input switch module is used to connect the input end of the first amplifier module; the input end of the second input switch module is used to connect the second input signal, and the output end of the second input switch module is used to connect the input end of the second amplifier module. The low noise amplifier of the present invention can improve radio frequency performance and performance indicators.

The invention provides a cellular antenna compensation device, and belongs to the technical field of wireless communication. The cellular antenna compensation device comprises a first radio frequency connection module, a multi-band frequency mixer, a multi-band access module, a comparator module, a main controller and a second radio frequency connection module, the multi-band channel module comprises a transceiving channel and a plurality of receiving channels. Wherein the comparator module is used for analyzing a radio frequency signal sent by the multi-band frequency mixer, selecting a target transmission channel in a transceiving path based on an analysis result, and outputting the analysis result to the main controller; and the main controller is used for adjusting the target transmission signal of the target transmission path according to the preset radio frequency line loss, the first sampling signal of the first sampling end, the second sampling signal of the second sampling end and the analysis result, so that the gain between the input signal and the output signal of the antenna compensation device is constant. According to the invention, the radio frequency insertion loss of the cellular communication module can be reduced, so that the radio frequency performance of the communication equipment can be improved.

The invention discloses a nano-twin copper patch antenna and a preparation method thereof, and relates to the field of micro electro-mechanical devices, the nano-twin copper patch antenna comprises a nano-twin copper antenna, a dielectric substrate and a protective layer covering the nano-twin copper antenna, the thickness of the nano-twin copper antenna is 0.1-200 [mu] m, and the organization structure of the nano-twin copper antenna comprises a nano-twin structure. The nano-twin copper antenna with the organization structure containing the nano-twin structure is prepared, and the conductivity, the radio frequency performance and the mechanical performance of the nano-twin copper patch antenna are improved.

The embodiment of the utility model provides an antenna assembly and a wearable device, the antenna assembly comprises an antenna main body, a printed circuit board and a metal bezel arranged on a shell of the wearable device, the metal bezel is coupled with the antenna main body to form a circular polarization radiation structure, the antenna main body is connected with a feeding point on the printed circuit board, and the printed circuit board is connected with the metal bezel. And the antenna main body is manufactured through a PDS printing process to form a three-dimensional structure. According to the antenna assembly provided by the utility model, through the coupling design of the metal bezel and the antenna and the PDS printing technology, the antenna performance bottleneck of a miniaturized terminal is broken through, and the radio frequency performance of the antenna is improved.

The present invention discloses a three-dimensional antenna radio frequency tag and its manufacturing process in the field of radio frequency tag technology. The radio frequency tag includes a radio frequency chip connecting piece assembly, a coating layer and an insulating plate. The coating layer is coated on the surface of the insulating plate, and a gap is provided at the connection between the two ends of the coating layer to form an opening; the radio frequency chip connecting piece assembly is arranged on the upper side of the coating layer, the position of the radio frequency chip in the radio frequency chip connecting piece assembly corresponds to the position of the opening, and the two ends of the radio frequency chip connecting piece assembly are respectively connected to the coating layers on the left and right sides of the opening; the process includes the steps of preparing the radio frequency chip connecting piece assembly, preparing materials, bonding the insulating plate to the coating layer, folding the coating layer, positioning and cutting, dipping in paint, and pasting product labels. The present invention can obtain the best radio frequency performance, high read and write sensitivity, wide range, and is suitable for processing in automated production lines, with high production efficiency and low cost, which is conducive to large-scale production and promotion, and promotes the informatization of the manufacturing industry.

The invention provides a multi-channel large-bit time delay assembly, which is based on a low E-plane coplanar waveguide-strip line transmission structure, reduces the area of a time delay line, and inhibits the appearance of a high-order mode at the same time. By adding an absorption shielding structure, the electromagnetic environment of the high-gain amplifier chip is improved; and the interconnection from the chip to the substrate is optimized by adopting a continuous ground plane transition mode. A high-integration multi-channel control chip is used for outputting four paths of independent delay control signals and modulation signals; a driving circuit unit is built for each channel; and finally, through reasonable layout of the four-channel six-bit delay line circuit, a component function is realized.

The invention discloses a millimeter wave radio frequency chip cavity QFN packaging structure optimization method and system, and the method comprises the following steps: 1, collecting the core electrical parameters and thermal power consumption parameters of a millimeter wave radio frequency chip and the performance requirements of a target application scene, and determining the basic structure parameters of cavity QFN packaging, the basic structure parameters comprise the size of a packaging body, the number and arrangement spacing of pins, and the size range of a cavity opening; step 2, suppressing requirements based on millimeter wave frequency band signal transmission characteristics and electromagnetic coupling; the millimeter wave radio frequency chip has the beneficial effects that optimization is performed from multiple dimensions of cavity structure, heat dissipation layout, pin and bonding design specially aiming at the high-frequency characteristic of the millimeter wave radio frequency chip, and the problem that millimeter wave frequency band signal transmission characteristics are not considered in the prior art is solved; through cavity electromagnetic shielding design, differential heat dissipation layout and impedance matching optimization, the radio frequency performance, the heat dissipation performance and the mechanical reliability of the packaging structure are remarkably improved, and the application requirements of chips with the frequency bands of 120 GHz and above are met.

The invention discloses a grounding stacking integrated radio frequency front-end chip stacking structure and a preparation method thereof, and belongs to the technical field of radio frequency microsystems. Based on silicon-based packaging, radio frequency front-end chips including a power divider, a low-noise amplifier and a multifunctional chip are subjected to function division, and four-channel radio frequency chips are respectively subjected to silicon-based embedded packaging and are led out through silicon through holes (TSV). An upper layer chip packaging module and a lower layer chip packaging module which are used for packaging two channel radio frequency chips respectively are bonded and integrated in a back-to-back mode, and the radio frequency chips which are packaged differently on the upper layer and the lower layer are connected through TSV via holes. Fanout lead-out is carried out in a bottom layer radio frequency chip, so that high-density integrated stacking is realized. By the adoption of the integrated stacking structure, the packaging size can be greatly reduced, and compared with a traditional silicon-based embedded fan-out structure, the size can be further reduced, and the packaging weight is reduced.

The invention discloses a photodetector structure and an integrated coherent optical receiver chip. The photodetector structure comprises a semiconductor substrate; a spacer layer is formed on the semiconductor substrate; at least one photoelectric detector is formed on the spacing layer; a cavity is formed in the semiconductor substrate below a detector area where the at least one photoelectric detector is located. According to the photoelectric detector structure, the photoelectric detector is isolated from the substrate through the cavity, so that the parasitic capacitance of the ICR-PIC radio frequency output end is reduced, and the ICR-PIC radio frequency performance and the heating efficiency when a heater is integrated are optimized.

The present invention relates to the field of wireless communication technology, and provides a low noise amplifier and a radio frequency chip, including a common port input selection module, a first amplifier module, a second amplifier module, a first input switch module, a second input switch module, a first output matching module, and a second output matching module; the input end of the common port input selection module is used to receive a radio frequency signal, and the output end of the common port input selection module is used to control the selective output of the first amplifier module and / or the second amplifier module to achieve different gain adjustment controls on the output signal; the first amplifier module and the second amplifier module are used to amplify the signal, and the first output matching module and the second output matching module are used to match the output; the first input switch module and the second input switch module are used to access the input signal. The low noise amplifier of the present invention can achieve good radio frequency performance and performance indicators.

An RF transistor amplifier includes an RF transistor amplifier die having a semiconductor layer structure; an interconnect structure having opposite first and second sides, wherein the first side of the interconnect structure is adjacent to a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement; and one or more circuit elements at the first side and / or the second side of the interconnect structure.

This application relates to a wireless signal optimization method for tire pressure information data transmission, comprising the following steps: a sensor node initiates a relay transmission mode based on link quality judgment, selects a relay node through a micro-routing protocol, and forwards data packets to a distributed slot antenna formed by coupling through vehicle body gaps via neighboring nodes; a central signal aggregator fuses the data received from multiple paths to reconstruct the complete tire pressure data stream. This application achieves reliable and continuous transmission of tire pressure signals under extreme obstruction environments, while also meeting the requirements of low power consumption and real-time performance.

The application relates to a coaxial connector dynamic assembly control method based on time domain reflection feedback. The method comprises the following steps: constructing a target impedance model; calibrating an assembly zero point; driving a shielding shell to quickly approach a preset safe depth; performing a fine regulation cycle of step-by-step pressing and impedance detection to obtain an instantaneous impedance characteristic value; and stopping pressing and fixing the position of the shielding shell when the instantaneous impedance characteristic value falls within the target impedance parameter range. The application controls the mechanical assembly depth through the electrical performance feedback closed loop, effectively eliminates the influence of the manufacturing tolerance on the characteristic impedance, solves the impedance dispersion problem in the assembly of special-shaped terminals, and significantly improves the high-frequency performance consistency and assembly yield of the connector.

The invention relates to the technical field of semiconductor devices, in particular to a preparation method of a GaN HEMT with an air dielectric layer and a composite passivation layer structure, and the method comprises the following steps: 1, cleaning an epitaxial wafer, and defining ohmic contact regions of a source electrode and a drain electrode; carrying out metal evaporation, metal lift-off and annealing treatment on the epitaxial wafer to prepare a source electrode and a drain electrode; 2, depositing a first passivation layer on the epitaxial wafer on which the source electrode and the drain electrode are prepared, and performing isolation; step 3, etching two lower layer cavities on the isolated first passivation layer; step 4, preparing two columnar light resistors on the two lower layer cavities; and step 5, depositing a second passivation layer on the first passivation layer of the two prepared columnar photoresistors. The air dielectric layer is introduced between the composite passivation layers on the two sides of the grid electrode. As the air medium has a very low dielectric constant, parasitic capacitance between the gate electrode and the source electrode and between the gate electrode and the drain electrode of the device can be effectively reduced.