Ultra high-speed si/sige modulation-doped field effect transistors on ultra thin soi/sgoi substrate

a field effect transistor and modulation-doped field effect technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of reducing self-heating and driving current, and achieve high rf performance
US20050045905A1Inactive Publication Date: 2005-03-03GLOBALFOUNDRIES US INC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
GLOBALFOUNDRIES US INC
Publication Date
2005-03-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.
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Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates generally to silicon and silicon germanium based semiconductor transistor devices, and more specifically, to a device design including a grown epitaxial field effect transistor structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. Preferably, the epitaxial field effect transistor structure includes the critical device scaling and layer structure design for a high mobility strained n-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate in order to achieve fmax in excess of 200 GHz.

[0003] 2. Description of the Prior Art

[0004] The attractiveness of substantial electron mobility enhancement (i.e. 3-5 times over bulk silicon) in modulation-doped tensile-strained Si quantum wells ...

Claims

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