Manufacturing method of N-type TOPCon solar cell

A solar cell and manufacturing method technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of polluted cells and diffusion furnace tubes, difficult adjustment of diffusion processes, etc., achieve high photoelectric conversion efficiency, reduce investment quota, and improve short circuit. effect of current

Active Publication Date: 2020-09-04
常州顺风太阳能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the diffusion process is difficult to adjust, and the screen printing boron source is easy to introduce metal ions, pollute the battery and diffusion furnace tube

Method used

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  • Manufacturing method of N-type TOPCon solar cell
  • Manufacturing method of N-type TOPCon solar cell
  • Manufacturing method of N-type TOPCon solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The manufacture method of the N-type TOPCon solar cell that the present embodiment relates to, comprises the steps:

[0039] a. Double-sided texturing: use the N-type silicon wafer substrate 1 with a minority carrier life > 10ms, perform double-sided pretreatment, reduce the thickness to 6 μm, and perform alkali texturing to form a pyramid textured surface, and the thinning amount is controlled at 0.40g;

[0040] b. Single-sided spin coating: use a spin coating liquid with a volume ratio of boron source: pre-wetting liquid of 1:1.6, and use a speed of 2000r / m to spin evenly and distribute it on the textured silicon wafer surface, as Preconditions for forming a heavily doped region; among them, boric acid: water: propylene glycol monomethyl ether is 1: 2.8: 6.8 in volume ratio: propylene glycol monomethyl ether in pre-wetting liquid: water in volume ratio The ratio is 1:1.5, so as to ensure that the boron source can be mixed evenly and can be easily and evenly spin-coate...

Embodiment 2

[0053] This embodiment relates to a method for fabricating an N-type TOPCon solar cell based on selective emitter technology, including the following steps: using an N-type silicon chip, the resistivity is 1Ω.cm, and the minority carrier lifetime is >10ms.

[0054] 1) Double-sided texturing: In the slot machine, pre-treatment polishing is performed first, and the polishing thickness is about 6 μm; potassium hydroxide is used: the volume ratio of additives for model TS52 is 8:1, the temperature is maintained at 80 ° C, and the time is about 6 minutes Carry out rapid texturing; the amount of thinning is controlled at 0.42g;

[0055] 2) Single-side spin coating, single-side oxidation, using a spin coating solution with a mass ratio of boron source: pre-wet solution = 1:1.8, in an atmosphere with a nitrogen:oxygen volume ratio of 1:2.8, and controlling the temperature at 700°C for 1 hour Using tubular oxidation to form boron-containing silicon oxide layer to solve the problem of b...

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Abstract

The invention relates to a manufacturing method of an N-type TOPCon solar cell. The manufacturing method comprises the following steps: a, double-sided texturing; b, single-sided spin coating; c, single-sided oxidation: forming a boron-containing silicon oxide layer on a spin coating surface; d, forming a heavily doped region substrate and a lightly doped region substrate: forming an organic masklayer for protecting a heavily doped region at a position corresponding to the metal gate line by using a mask mode, completely removing the boron-containing silicon oxide layer and the boron source outside the coverage area of the organic mask layer by using HF, and then removing the organic mask layer; and e, heavy doping and light doping: specifically, completely pushing the spin-coated boron source into the silicon substrate through a tubular low-pressure diffusion method, forming a heavy doping region is formed, carrying out whole-surface source-through deposition to form a lightly dopedregion, and finally, carrying out high-temperature oxidation to form a BSG layer with the thickness of 80-100nm, and then carrying out normal subsequent processes. According to the invention, a boronselective emitter can obtain higher photoelectric conversion efficiency, so that the conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention belongs to the solar cell production technology, in particular to a method for manufacturing an N-type TOPCon solar cell. Background technique [0002] With the improvement of the quality of silicon wafers, the surface recombination of crystalline silicon cells has become the main factor restricting their efficiency. The existing N-type TOPCon technology can improve the passivation of the cell surface and promote the transport of majority carriers, thereby increasing the open circuit voltage and fill factor. Compared with PERC technology, due to the experiment of full back passivation to avoid the influence of laser slotting, the filling factor is higher; N-type single crystal silicon has the dual advantages of high power generation and high reliability compared with conventional P-type single crystal silicon, It is the development direction of high-efficiency batteries in the future. [0003] High-efficiency solar cells require emitter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/1804H01L31/1868H01L31/022425Y02E10/547Y02P70/50
Inventor 袁玲王芹芹瞿辉曹玉甲
Owner 常州顺风太阳能科技有限公司
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