669 results about "Laser scribing" patented technology

Apparatus, systems, and methods for forming a photovoltaic cell from a common layer on a substrate are provided. A first pass is made with a first laser beam over an area on the common layer. The first pass forms a groove in the common layer. The first pass forms within the common layer a first edge and a second edge. The first edge is separated from the second edge by the groove. The groove provides a first level of electrical isolation between the first edge and the second edge. A second pass is made with a second laser beam over approximately the same area on the common layer. The second pass provides a second level of electrical isolation between the first edge and the second edge. The second level of electrical isolation is greater than the first level of electrical isolation.

Systems and methods for laser scribing provide extended depth affectation into a substrate or workpiece by focusing a laser beam such that the beam passes into the workpiece using a waveguide, self-focusing effect to cause internal crystal damage along a channel extending into the workpiece. Different optical effects may be used to facilitate the waveguide, self-focusing effect, such as multi-photon absorption in the material of the workpiece, transparency of the material of the workpiece, and aberrations of the focused laser. The laser beam may have a wavelength, pulse duration, and pulse energy, for example, to provide transmission through the material and multi-photon absorption in the material. An aberrated, focused laser beam may also be used to provide a longitudinal spherical aberration range sufficient to extend the effective depth of field (DOF) into the workpiece.

A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

A combination of specific laser pulse durations and repetition rates are incorporated into a semiconductor wafer laser scribing/dicing process. The disclosed combination can reduce factors that contribute to thermal effects, explosive melting and evaporation, and laser/plasma interactions, thereby reducing problems with microcracks, delamination, and particles that can affect semiconductor die yields and reliability.

Laser scribing can be performed on a workpiece (104) such as substrates with layers formed thereon for use in a solar panel without need to rotate the workpiece (104) during the scribing process. A series of lasers (602, 622) can be used to concurrently remove material from multiple positions on the workpiece (104). Each laser (602, 622) can have at least one scanning device (614, 630, 632) positioned along a beam path thereof in order to adjust a position of the laser output relative to the workpiece (104). By adjusting the beam or pulse positions using the scanning devices (614, 630, 632) while translating the workpiece (104), substantially any pattern can be scribed into at least one layer of the workpiece (104) without the need for any rotation of the workpiece (104).

A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.

In a method for scribing fragile material, a laser beam is irradiated onto a work plate of the fragile material. The work plate is heated by absorption of the irradiated laser beam and generating thermal stress by the heating. The laser beam is formed by a plurality of laser beam groups arranged along a beam scanning direction on a same line, and the plurality of laser beam groups are divided into two groups. One takes charge of initial heating and rising up temperature of the work plate, and another takes charge of temperature holding of the work plate. The laser beam intensity corresponding to each of the laser beam groups is adjusted so as to obtain optimum values.

By the method, it is possible to remarkably increase scribing speed of the work plate of the fragile materials without increasing heating temperature.

A glass film laminate is manufactured by setting a surface roughness Ra of a surface of a glass film having a thickness of 200 μm or less to contact a support glass, which supports the glass film, and a surface of the support glass to contact the glass film to 2.0 nm or less, and by bringing the surfaces of the glass film and the support glass into surface contact with each other. After that, a laser scribing operation is carried out, in which a scribe line is formed in the glass film by propagating an initial crack through laser heating of the glass film followed by subsequent cooling of the glass film.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.

This invention contemplates the use of laser patterning/scribing in electrochromic device manufacture, anywhere during the manufacturing process as deemed appropriate and necessary for electrochromic device manufacturability, yield and functionality, while integrating the laser scribing so as to ensure the active layers of the device are protected to ensure long term reliability. It is envisaged that the laser is used to pattern the component layers of electrochromic devices by directly removing (ablating) the material of the component layers. The invention includes a manufacturing method for an electrochromic device comprising one or more focused laser patterning steps. To minimize redeposition of laser ablated material and particulate formation on device surfaces a number of approaches may be used: (1) ablated material generated by the focused laser patterning may be removed by vacuum suction and/or application of an inert gas jet in the vicinity of the laser ablation of device material; (2) spatial separation of the edges of layers and patterning of lower layers prior to deposition of upper layers; and (3) the laser patterning step may be performed by a laser beam focused directly on the deposited layers from above, by a laser beam directed through the transparent substrate, or by a combination of both.

Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.

Systems and methods for manufacturing solar panels are disclosed. Solar cells are placed on a conveyor that transports the cells from a start point to an end point. A laser scribing module scribes the cells at a predetermined depth. A paste dispensing module deposits a predetermined amount of conductive paste on the surface of the solar cells. A cleaving apparatus divides the cells into smaller strips. A shingling module creates a string of cells by overlapping the strips. A targeted annealing module cures the paste, and a layup module places the strings on a backsheet. A glass cover is then added to one side of the strings.

A method for manufacturing a thin film photovoltaic module comprising series connected cells, the cells comprising a front contact, a back contact and a photovoltaically active region positioned between the front and back contacts, the series connected cell being formed by scribing a front contact layer, a photovoltaically active layer and a back contact layer on a substrate, the method comprising laser scribing at least one of the front contact layer, the photovoltaically active layer or the back contact layer to form laser scribes using a laser beam scanned rapidly over the layer.

A number of new laser patterns are defined by laser scribing the material. This produces new laser patterns which have not previously been known.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.

A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser melts portions of the workpiece prior to a second laser ablating the portions of the workpiece.

A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser uses multiphoton absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece. In an alternative embodiment, a first laser uses high energy single-photon absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a first mask material layer soluble in a solvent over the semiconductor substrate and a second mask material layer, insoluble in the solvent, over the first mask material layer. The multi-layered mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then plasma etched through the gaps in the patterned mask to singulate the IC with the second mask material layer protecting the first mask material layer for at least a portion of the plasma etch. The soluble material layer is dissolved subsequent to singulation to remove the multi-layered mask.

Methods of dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating leading with a first irradiance and following with a second irradiance, lower than the first. Multiple passes of a beam adjusted to have different fluence level or multiple laser beams having various fluence levels may be utilized to ablate mask and IC layers to expose a substrate with the first fluence level and then clean off redeposited materials from the trench bottom with the second fluence level. A laser scribe apparatus employing a beam splitter may provide first and second beams of different fluence from a single laser.

A method of forming a scribe line in a glass substrate having a compressive surface layer and an inner tension layer includes forming a defect through the compressive surface layer that is offset from a first edge of the glass substrate. The defect extends through the compressive surface layer to partially expose the inner tension layer. A scribe line is generated through the compressive surface layer by translating the glass substrate with respect to a laser beam and a cooling jet. The scribe line is initiated at the defect and is terminated at a termination location along the scribe line that is offset from a second edge of the glass substrate.

The invention relate to a solar battery assembly and a preparation method thereof. The solar battery assembly comprises a plurality of solar batteries and at least one fourth laser scribing, wherein each solar battery comprises a transparent conductive film, a solar battery layer and a metal back electrode which are sequentially overlapped, and the adjacent solar batteries are connected in serieswith each other through a laser scribing process; the fourth laser scribing penetrates through the metal back electrodes, the solar battery layers and the transparent conductive films, and the adjacent solar batteries are disconnected to form at least two independent battery units, wherein each battery unit comprises the solar batteries connected in series. The solar batteries assembly is dividedinto a plurality of independent battery units through the fourth laser scribing so that each battery unit comprises the specified number of solar batteries connected in series, therefore, the required working voltage and current can be obtained.

A sapphire wafer having a thickness greater than 125 microns and having devices disposed thereon is laser scribed to form a grid array pattern of laser scribe lines laser scribed into the sapphire wafer. The sapphire wafer is separated along the laser scribe lines to separate a plurality of device dice defined by the grid array pattern of laser scribe lines. Each device die includes (i) a device and (ii) a portion of the sapphire wafer having the thickness greater than 125 microns. In some embodiments, a GaN LED device die includes a GaN based LED device, and a sapphire substrate supporting the GaN based LED device. The sapphire substrate has: (i) a thickness greater than 125 microns effective for increased light extraction due to a lower critical angle for total internal reflection; and (ii) sides generated by laser scribing.