164 results about "Laser patterning" patented technology

The invention discloses a reconfigurable acoustical holography modulation method and device based on a crystalline polymer. The programmable acoustical holography device is composed of a single-layer photoresponse crystalline polymerization flat plate, is switched between two phases when the temperature irradiated by laser changes, has a crystalline state and a non-crystalline state, and reversibly changes along with the temperature. Space sound field modulation can be realized by spatially arranging the coding units, the crystalline polymer flat plate subjected to laser patterning phase change is recovered to the previous crystalline state after being cooled, the patterned coding acoustical holography disappears, and new phase acoustical holography is written in, so that a new sound field modulation function is realized. According to the programmable phase acoustical holography device based on the crystalline polymer, the incident plane wave of the probe can be modulated into any three-dimensional complex sound field, and the programmable phase acoustical holography device is of a complete plane type, is matched with underwater acoustic impedance, and is high in acoustic energy coupling efficiency, compact in structure, easy to prepare and low in price.

The invention relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure, a preparation method thereof and application of the selective passivation contact structure to preparation of a selective TOPCon cell. The method comprises the steps that a first tunneling oxide layer, first thin intrinsic amorphous silicon with the high crystallization rate and second thick intrinsic amorphous silicon with the low crystallization rate are sequentially prepared on the back face of a silicon wafer; boron diffusion doping is carried out, so that the first boron-doped polycrystalline silicon and the second boron-doped polycrystalline silicon have difference in doping concentration and crystallization rate; in the alkali etching process after laser patterning, first boron-doped polycrystalline silicon and a first tunneling oxide layer in a back non-electrode contact area are reserved by utilizing the etching rate difference of an alkaline solution on BSG and two layers of boron-doped polycrystalline silicon with different doping concentrations and crystallization rates; and the first tunneling oxide layer, the first boron-doped polycrystalline silicon and the second boron-doped polycrystalline silicon in the back electrode contact region are reserved. According to the method, the process steps can be simplified, parasitic absorption and recombination are reduced, passivation and transverse transmission are improved, and the cell efficiency is improved.

The invention belongs to the technical field of light field modulation, and particularly relates to a light field modulation method based on a Fabry-Perot microcavity internal device. The method comprises the following steps: based on a micro-nano light processing scheme, constructing a Fabry-Perot microcavity laser based on intracavity low-light element light field shaping, and then placing the laser in a light field test system; the method comprises the following steps: (1) detecting an output laser pattern, and controllably constraining and modulating an intracavity light field by adjusting the position of a laser; (2) detecting an output laser spectrum, further adjusting the pumping energy to obtain a relation between a spectrum peak value and the pumping energy, and realizing high-quality factor single-mode laser; by designing the matching relation between the optical continuous interface or diffraction structure configuration and the micro-cavity configuration in the micro-cavity laser, the performance parameters of the Fabry-Perot micro-cavity and the modulation of the intra-cavity light field can be realized, so that the high-quality factor micro-cavity laser and the customized output of the light field in a specific laser mode are realized.

The invention relates to the technical field of photovoltaic cell manufacturing, and provides a photovoltaic cell film layer laser patterning method, device, system and equipment and a medium, and the method comprises the steps: obtaining a preset patterning film opening depth of a photovoltaic cell; establishing a corresponding relation between the PSG thickness of the photovoltaic cell and the laser processing power required for reaching the preset graphical film opening depth; scanning by using an interference sensor to obtain the PSG thickness of the photovoltaic cell; and the laser processing power is adjusted in real time according to the PSG thickness and the corresponding relation, so that uniform laser patterning of the photovoltaic cell film layer is completed according to the preset patterning mold opening depth. At least the problem that uniformity and efficient production are difficult to consider in existing photovoltaic cell laser film opening can be solved.

The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

The invention relates to the technical field of solar cells, and discloses a TBC cell and a preparation method thereof.The preparation method comprises the steps that a tunneling layer and an intrinsic amorphous silicon layer are prepared on the back face of a silicon wafer; a first barrier layer is locally prepared on the back surface of the intrinsic amorphous silicon layer; boron diffusion enables the intrinsic amorphous silicon layer in a non-first barrier layer region to be converted into a boron-doped polycrystalline silicon layer; removing the local first barrier layer through laser patterning to expose the intrinsic amorphous silicon layer in a laser area; performing wet etching to form a Gap region, and exposing the boron-doped polycrystalline silicon layer and the intrinsic amorphous silicon layer in a non-laser region; locally preparing a second barrier layer on the back surfaces of the Gap region silicon wafer and the boron-doped polycrystalline silicon layer; phosphorus diffusion enables the exposed intrinsic amorphous silicon layer to be converted into a phosphorus-doped polycrystalline silicon layer; removing the second barrier layer and performing texturing; according to the method, the Gap region can be easily formed, the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer have no height difference, the working procedures are few, the damage is little, the cost is low, and the battery efficiency can be improved.

The invention provides a crystalline silicon cell and a manufacturing method thereof, the crystalline silicon cell comprises an N-type silicon substrate, a tunneling oxide layer, an N + poly layer, AIOx / SiNx, a silver metal electrode, a P + layer and an aluminum metal electrode, and the manufacturing method of the crystalline silicon cell comprises the following operation steps: S1, double-sided cleaning and texturing: adopting an N-type silicon wafer with the size of 182.2 * 183.75, cleaning and texturing the surface of the silicon wafer with alkali, and cleaning and texturing the surface of the N-type silicon wafer with the size of 182.2 * 183.75; s2, phosphorus doping is carried out, an N + layer is formed, a thin oxide layer is deposited firstly, and then phosphorus doping is completed through a low-pressure diffusion furnace. According to the crystalline silicon cell and the manufacturing method thereof, the use amount of silver paste is reduced by about 35% through texturing, phosphorus doping, laser patterning, etching alkali polishing, boron diffusion, cleaning, atomic layer deposition, front and back anti-reflection layer preparation, silk-screen printing and laser-assisted sintering and through a cell back aluminum grid line laser induction process.

The invention discloses an image recognition and precision control system for laser imaging equipment, which relates to the technical field of laser imaging equipment and comprises an edge fracture recognition module, a geometric consistency calculation module, a path fusion reconstruction module, a contour consistency verification module and a parameter self-regulation module. And the path fusion reconstruction module is used for constructing a connection section based on edge tail end trend consistency and curvature similarity results, fitting a fracture path by adopting a Bessel interpolation algorithm with a curvature penalty term, and generating a complete processing contour meeting a continuity requirement. According to the method, the problem that the processing path is discontinuous due to pixel-level edge fracture in the image acquisition stage in laser imaging processing is solved, geometric consistency identification of the non-closed curve edge and automatic fusion of the fracture path are realized, a continuous closed high-precision processing contour is generated, and the image identification robustness and the processing stability are improved.

The invention provides a preparation method of a boron-doped selective emitter, the emitter and a TOPCon battery, and relates to the technical field of TOPCon batteries. The preparation method comprises the following steps: depositing a borosilicate glass layer on the front surface of a textured silicon wafer through a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; removing the borosilicate glass layer in a non-fine grid region on the front surface of the silicon wafer through a laser patterning process to obtain the silicon wafer of which the borosilicate glass layer in a fine grid region on the front surface of the silicon wafer is reserved; forming a shallow doped region in a non-fine grid region on the front surface of the silicon wafer through a boron diffusion process, and forming a primary heavily doped region on a borosilicate glass layer in a fine grid region on the front surface of the silicon wafer; and pushing the boron source in the primary heavily doped region into the silicon wafer through an SE process to form a secondary heavily doped region so as to obtain the boron-doped selective emitter. The preparation method can reduce the proportion of concentric circles generated by silicon wafer oxygen precipitation caused by a high-temperature process, further reduces the contact resistivity of the front metal semiconductor, and improves the efficiency of the cell.

The invention relates to a preparation method of a modified zinc negative electrode and an aqueous zinc ion battery, and relates to the technical field of aqueous zinc ion batteries. The preparation method comprises the following steps: S10, performing patterning treatment on the surface of a zinc foil by adopting purple picosecond pulse laser to obtain a laser reconstructed zinc negative electrode; and S20, performing plasma treatment on the surface of the laser reconstructed zinc negative electrode by adopting a plasma technology to obtain the modified zinc negative electrode. According to the preparation method provided by the invention, through combined application of laser patterning treatment and plasma treatment, the growth of zinc dendrites on the surface of the modified zinc negative electrode and the occurrence of zinc negative electrode-electrolyte interface side reaction in the use process are reduced, the preparation process is simple, and the cost is low.

A laser assembly for controlling foliage growth including a body adapted to being mounted at a location in order to emit an axial direction defining laser pattern to establish a growth limiting boundary for any of a tree, shrub or like foliage. The laser pattern provides a high intensity light beam causing cellular damage to tissue of the foliage in order to retard growth into the affected area. The body further includes at least one eyepiece for issuing the laser pattern according to any of a pin-point or arcuate / sweep pattern. A clamp or post arrangement mounts the body in a multi-axial adjustable fashion.

The invention relates to the field of solar cells, and discloses a preparation method of a transverse p-n junction BC solar cell. Through ingenious step design, the BC solar cell with the novel transverse p-n junction structure can be obtained, the front face of the cell is free of grid lines, the two transverse portions are the n area and the p area respectively, and therefore the transverse p-n junction BC solar cell can be formed. According to the cell, the optical performance of the cell can be improved through simple structure adjustment without a complex laser graphical design process. In addition, a boundary groove of the p region and the n region is formed in the surface of the silicon wafer in advance through laser grooving treatment, in the boron diffusion process, even if boron doping atoms cross the designed boundary, the boron doping atoms cannot be longitudinally and inwards expanded to the surface of the silicon wafer substrate of the n region, and therefore for the back face of the silicon wafer, the boron doping atoms cannot be longitudinally and inwards expanded. After boron diffusion, the boundary between the n region and the p region can be highly consistent with the preset boundary, so that the problem of subsequent electrode printing accurate positions corresponding to the p region and the n region does not need to be worried about.

The invention discloses a multicolor laser film and a processing method thereof. The multicolor laser film comprises a coating and a carrier layer, multiple color areas are formed on the coating through laser, and limpid laser of the multiple color areas exists on the same coating to form a multi-color laser layer; the thickness of the multi-color laser layer is between 0.8 mu m and 2 mu m; a vacuum aluminum plating layer is arranged on the back surface of the coating of the multi-color laser layer; the vacuum aluminum-plated layer can be transferred or compounded on the carrier layer at one time through the adhesive layer, so that the whole structure presents a multi-color laser pattern; and the base film is adhered to the top surface of the multi-color laser layer and can play a role in protecting the surface of the multi-color laser layer. By adopting the arrangement, the multicolor laser film has the advantages of high precision and paper cost saving, and paper damage can be reduced during processing.

The invention discloses a laser powder bed sheet pattern distortion real-time correction system and method based on a phase type light valve, and relates to the technical field of metal additive manufacturing. The system comprises a polarization laser, a beam expanding and collimating unit, a reflecting mirror, a phase-type spatial light modulator, a reflecting mirror, a relay optical system, a galvanometer / field lens system, a movable spectroscope, a reference plane mirror and a forming cylinder. A double-loop correction system with a position sensitive detector as an absolute reference and a wavefront sensor as direct feedback is constructed, information of the position sensitive detector and the wavefront sensor is unified in a phase domain through a frequency domain fusion algorithm, and a comprehensive compensation phase diagram capable of completing pattern generation and distortion correction at the same time is generated. And loading to a phase type light valve to carry out high-power laser patterning modulation, and melting metal powder of a powder bed.

The invention relates to a stretchable conductive polymer composite electrode, a preparation method and application thereof, the stretchable conductive polymer composite electrode is provided with a conductive network layer and a conductive polymer elastomer layer, and the conductive network layer and the conductive polymer elastomer layer are stacked to form a double-layer composite structure. The stretchable conductive polymer composite electrode disclosed by the invention has the beneficial effects of high conductivity, high stretchability, laser patterning and cyclic regeneration. And high conductivity can still be maintained under 100% tensile strain. According to the stretchable conductive polymer composite electrode, high-precision patterning can be achieved through the laser patterning technology, a flexible circuit with the minimum line width being 25 microns is prepared, and customized processing is achieved through digital design. The composite electrode can form a film again after solvent-assisted dissolution, so that closed-loop regeneration of an electrode material is realized.

The invention relates to PCB (Printed Circuit Board) manufacturing, in particular to a secondary double-sided exposure method for keeping high-precision alignment of a substrate pattern, which comprises the following steps of: capturing the position of an A-side target, calculating an accurate camera position of a laser pattern in the pattern according to a target capturing result of the A side, and exposing the A side to realize alignment of an A-side exposure pattern and a first-time exposure pattern; a laser pattern is used for shooting on the B surface while the A surface is exposed, the laser pattern is recognized on the B surface to serve as a target hole, the B surface is exposed, and the B surface exposure pattern is aligned with the A surface exposure pattern; according to the technical scheme provided by the invention, the defect that the A-side exposure pattern, the B-side exposure pattern and the first-time exposure pattern are difficult to achieve relatively high alignment precision in the prior art can be effectively overcome.

The application provides a kind of hemispherical harmonic oscillator precision trimming device and method based on femtosecond laser, comprising: vacuum system, femtosecond laser trimming system, fixture, workpiece motion system and mass imbalance test system;Femtosecond laser trimming system contains focusing module, laser light path, femtosecond laser, femtosecond laser energy continuous regulation module and femtosecond laser patterning and control system;Workpiece motion system includes workpiece rotation mechanism and workpiece translation mechanism, workpiece rotation mechanism is used to realize the rotation motion of fixture and hemispherical harmonic oscillator;Workpiece translation mechanism is connected with workpiece rotation mechanism, for realizing the three-direction translation motion of hemispherical harmonic oscillator and workpiece rotation mechanism;Mass imbalance test system contains resonator excitation module and test module;Resonator excitation module is used to excite hemispherical harmonic oscillator;Test module is used to detect the vibration of hemispherical harmonic oscillator that has been excited.The application effectively reduces the influence of major trimming pit on the stability of resonator standing wave and gyroscopic precision.

The invention provides a TBC battery and a preparation method thereof. The current density is remarkably improved by adjusting printing and laser patterns, reducing the area of a P region or / and an N region, increasing the area of a gap region, reducing the metal shielding area and improving the photon utilization rate; and compounding of a metal region is reduced, and Voc and passivation performance of the battery piece are improved. By polishing the gap region with the pyramid suede, the reflection of incident light in the silicon substrate can be increased, so that the Isc of the cell is improved, and meanwhile, as the initial gap region is protected by the mask layer and is not damaged by wet corrosion subsequently, the height difference between the gap region and the boron / phosphorus diffusion layer can be reduced, the transverse transmission of carriers in the silicon substrate is facilitated, and the FF is improved. According to the TBC battery prepared by the method, under the condition that the number of partitions on the back surface of the battery is not changed, the areas of the P region and the N region are reduced, so that the area of the gap region is increased, the metal shielding area is reduced, the photon utilization rate is improved, and the current density is obviously improved; and compounding of a metal region is reduced, and Voc and passivation performance of the battery piece are improved.

The invention belongs to the field of transfer membranes, and particularly relates to a scratch-resistant transfer membrane material and a preparation process thereof. The preparation method is based on blending of rigid components and flexible resin and intermolecular crosslinking reinforcement. According to the coating, waterborne polyurethane resin is used as a main film-forming material, and meanwhile, high-hardness waterborne acrylic resin with a specific proportion is doped, so that the cured coating has hardness for resisting deformation and elasticity for absorbing stress. On the basis, an environment-friendly cross-linking agent is introduced into the formula of the coating, and the auxiliary agent chemically reacts with an active functional group on a resin molecular chain in the baking process, so that the cohesion strength and the overall durability of the coating are enhanced. And the compactness of the coating is further improved through the cross-linked structure, so that the coating has better tolerance to solvents and heat in subsequent processing, and the definition of laser patterns and the gloss of an aluminum-plated layer are guaranteed. And the final product meets the strict solvent residue limit standard, and is suitable for the packaging field with higher safety requirements.

The present invention discloses a roll-to-roll semi-automatic preparation method and system for flexible optoelectronic devices, relating to the technical field of flexible optoelectronic device manufacturing. The method comprises: using a roll-to-roll slit coater to slit-coat a functional material onto a laser P1 patterned coil, obtaining a flexible coil coated with a light absorbing layer and an interface layer; performing machine vision inspection using a physical coil archive to obtain a coil digital twin archive; transferring the flexible coil coated with the light absorbing layer and the interface layer to a roll-to-roll laser scribing device for laser P2 scribing to obtain a P2 patterned coil; and packaging and cutting the P3 patterned coil using a laminated packaging method based on coil packaging instructions and electrical cutting instructions to obtain a flexible optoelectronic device. Through process flow design, the present invention improves device processing accuracy and performance, enhances process flexibility, and is more suitable for industrial production.

A method and system for data acquisition in online optical inspection for additive manufacturing (AM), comprising the steps of: (a) acquiring optical data by applying a plurality of continuous or pulsed parallel laser beams onto at least one region of interest (108) during the AM process, the at least one region comprises finite static or moving locations including in a cooling region and a printed region (210); and (b) recording reflected laser patterns (110) using at least one image sensor (204) positioned to capture interactions between the plurality of parallel laser beams and the at least one region of interest; the surfaces of the at least one region become solid for each subsequent deposition layer, concurrently with the recording of changes in the reflected laser patterns over at least one image sequence; the changes include abnormal surface geometric profile patterns during material cooling with underlying subsurface defects.

The utility model relates to the technical field of packaging paper, and discloses laser frame paper which comprises a body paper layer and a transfer glue layer which are arranged in a stacked mode, a laser layer is further arranged on the side, away from the body paper layer, of the transfer glue layer, the laser layer is used for recording laser patterns, and a water paint layer is further arranged between the body paper layer and the transfer glue layer. The water-based paint layer is arranged between the transfer glue layer and the body paper layer, the surface of the body paper layer is covered with the water-based paint layer, after the water-based paint layer is dried, the surface of the body paper layer is smooth, the sealing performance of the body paper layer is improved, and laser patterns recorded on the laser layer on the transfer glue layer can have a better laser effect.

The invention discloses a production control method and system for high-precision holographic positioning hologram paper, and relates to the technical field of hologram paper production. The production control method of the high-precision holographic positioning hologram paper comprises the following steps: judging a transfer state; judging a fitting state; and obtaining a uniformity detection index. The transfer state of the PET carrier in the coating process and the mold pressing process is monitored in real time to judge whether coating treatment is carried out or not, if yes, the attaching state between the PET film and the paper layer is monitored in real time to judge whether thickness adjustment is carried out or not, and if yes, whether laser paper qualification marking is carried out or not is judged based on the obtained uniformity detection index; the effect of improving the matching degree of the laser pattern and the corresponding position of the paper layer in the printing process of the PET film is achieved, and the problem that in the prior art, the matching degree of the laser pattern and the corresponding position of the paper layer in the printing process of the PET film is not high is solved.

The invention discloses a hybrid passivation back contact cell and a production method thereof, and relates to the field of solar cells. The preparation method comprises the steps of silicon wafer polishing; sequentially depositing a tunneling oxide layer and a doped polycrystalline silicon layer on the back surface of the polished silicon wafer; a P region and an N region in future are defined on the doped polycrystalline silicon layer on the back surface of the silicon wafer through laser ablation; performing acid polishing treatment on the front surface of the silicon wafer; performing alkali texturing treatment on the front surface of the silicon wafer; depositing a passivation layer on the front surface of the silicon wafer; cleaning the back of the silicon wafer; an intrinsic microcrystalline silicon layer and a doped microcrystalline silicon layer are sequentially deposited on the back surface of the silicon wafer; carrying out laser ablation treatment on intrinsic and P-type microcrystalline silicon on an N-region contact region on the back surface of the silicon wafer, and exposing the N + doped polycrystalline silicon layer under the intrinsic and P-type microcrystalline silicon; depositing a TCO layer; laser ablation is carried out on the upper portion and the periphery of the polished lamination area of the N area and the P area, and an isolation ring groove is formed; the TBC passivation advantage is reserved, meanwhile, the technological process is simplified through laser patterning, and the efficiency bottleneck is broken through P-region intrinsic microcrystalline silicon and boron-doped microcrystalline silicon.

This application discloses a laser printing machine and printing method, belonging to the field of printing technology. The laser printing machine is used to imprint a laser pattern from a transfer film onto a UV varnish area of ​​packaging paper. It includes a mounting section; a PLC control system mounted on the mounting section; an imprinting conveyor mounted within the mounting section; a film-pressing roller mounted on the mounting section; and a position adjustment assembly, with two sets of position adjustment assemblies mounted on both sides of the film-pressing roller. The position adjustment assemblies are used to adjust the height of the film-pressing roller. Specifically, the position adjustment assemblies are adapted to automatically detect the thickness of the packaging paper and adjust the film-pressing roller to a fixed imprinting position after the transfer film is installed, and to automatically adjust the film-pressing roller away from the imprinting conveyor when the transfer film is not installed. This laser printing machine and printing method achieves the effect of automatically adjusting the height of the film-pressing roller.

The application discloses an iridium oxide modified fluorine-doped tin oxide electrode and a preparation method and application thereof. The electrode comprises a light-transmitting fluorine-doped tin oxide conductive glass substrate and an in-situ attached iridium oxide nano-modified layer. The preparation method comprises the following steps: preparation and aging of a precursor solution, alternating current electrochemical deposition, annealing and cleaning, and laser patterning treatment. The application further discloses a cell impedance sensor organ chip system comprising the electrode and application of the system in in-vitro drug screening. The application utilizes the low cost and light-transmitting property of the fluorine-doped tin oxide and the excellent charge injection capacity of the alternating current deposited iridium oxide nano layer to greatly reduce the interface impedance. The scheme meets the in-situ optical observation, realizes the high-sensitivity biological impedance monitoring comparable to gold electrodes, effectively solves the problems of high cost and complex process of the existing organ chip electrode, and is very suitable for popularization and application as a disposable high-throughput consumable.

The invention provides a perovskite-crystalline silicon laminated solar cell and a preparation method thereof. The preparation method provided by the invention comprises the step of performing laser patterning treatment on an edge perovskite edge cleaning area of the perovskite solar cell, so that the edge perovskite edge cleaning area becomes an optical filter for filtering short wavelength of 500-1100nm. According to the invention, the laser patterning processing is carried out on the perovskite edge cleaning area on the edge of the perovskite solar cell, so that the crystalline silicon cell does not need to be kept smaller than or equal to the effective area of the perovskite solar cell, the hot spot effect of crystalline silicon is overcome, and the module power is improved.

To provide an improved semiconductor package with increased density, a printed circuit board (PCB) core assembly, and a method for forming them.SOLUTION: A method of structuring a substrate for a semiconductor core assembly that may be utilized to form a semiconductor package assembly, a PCB assembly, a PCB spacer assembly, a chip carrier assembly, an intermediate carrier assembly (e.g., for a graphics card), or the like, wherein a silicon substrate core is structured by direct laser patterning, one or more conductive interconnects are formed in the substrate core, and one or more redistribution layers are formed on a surface thereof. The silicon substrate core may then be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.SELECTED DRAWING: Figure 2

The invention relates to the technical field of general papermaking, in particular to tipping paper for laser transfer cigarettes and a processing method thereof.The tipping paper for the laser transfer cigarettes is used for tobacco products and comprises a first body paper layer, a pattern layer, at least one reinforcing layer and at least one second body paper layer; the first body paper layer and the pattern layer are outer layers of the tipping paper, the first body paper layer is in direct contact with a cigarette holder of the tobacco product, and the first body paper layer or the second body paper layer contains cellulose; the reinforcing layer is arranged between the first raw paper layer and the second raw paper layers and / or between the two second raw paper layers, the reinforcing layer is of a net structure, and a substance forming a hydrogen bond with cellulose is arranged in the reinforcing layer; the pattern layer is arranged on one side of the second body paper layer, and the pattern layer comprises laser patterns.

The utility model relates to the technical field of laser, in particular to an area identification laser lamp which comprises an installation frame, outer shells are installed in the two sides of the installation frame, grating pieces are installed in the outer shells, a laser device body is installed on one side of the grating pieces, and a coupler is connected to one side of the laser device body. A coupler is installed on the lamp cover, a lens is installed on one side of the coupler, one side of the lens is clamped in the lamp cover, the lens is a Fresnel lens, light rays can be focused on a specific point mainly through the Fresnel lens, therefore, the brightness of laser lines is enhanced, the phenomena of blurring and diffusion are reduced, and the brightness of the laser lines is improved. The laser can be modulated through introduction of the grating sheet, specific laser patterns or lines are generated, effective transmission of light and stability of the projection angle are ensured through the clamping design of the lens and the lampshade, and the problem that the projection effect is poor due to light leakage or direction deviation is solved.