200 results about "Laser patterning" patented technology

The invention provides a femtosecond laser-based hemispherical harmonic oscillator precision trimming device and method. The femtosecond laser-based hemispherical harmonic oscillator precision trimming device comprises a vacuum system, a femtosecond laser trimming system, a clamp, a workpiece movement system and a mass imbalance test system, the femtosecond laser trimming system comprises a focusing module, a laser light path, a femtosecond laser, a femtosecond laser energy continuous regulation and control module and a femtosecond laser patterning and control system; the workpiece movement system comprises a workpiece autorotation mechanism and a workpiece translation mechanism; the workpiece autorotation mechanism is used for realizing autorotation movement of the clamp and the hemispherical harmonic oscillator; the workpiece translation mechanism is connected with the workpiece autorotation mechanism and is used for realizing three-direction translation motion of the hemispherical harmonic oscillator and the workpiece autorotation mechanism; the mass imbalance test system comprises a harmonic oscillator excitation module and a test module. The harmonic oscillator excitation module is used for exciting the hemispherical harmonic oscillator; and the test module is used for detecting the vibration of the excited hemispherical harmonic oscillator. According to the invention, the influence on the stability of the standing wave of the harmonic oscillator and the precision of the gyroscope caused by an overhaul pit is effectively reduced.

The invention discloses a back surface structure of a TBC battery, a preparation method of the back surface structure, the TBC battery and a preparation method of the TBC battery, and belongs to the technical field of solar batteries. According to the back surface structure of the TBC battery, the first doped polycrystalline silicon layer is provided with the high-concentration doped region and the low-concentration doped region, so that on one hand, good contact between a metal electrode and polycrystalline silicon is ensured, and meanwhile, the battery has relatively low contact resistance and high conversion efficiency. According to the back surface structure of the TBC battery or the preparation method of the TBC battery provided by the invention, on the basis of ensuring that the thickness of the first doped polycrystalline silicon layer is not reduced, by arranging the low-concentration doped region, the adverse effect of laser patterning processing on subsequent wet etching of polycrystalline silicon is reduced, the wet etching effect of the polycrystalline silicon is ensured, and the production efficiency of the TBC battery is improved. Therefore, on the basis of ensuring the battery performance, the difficulty of the preparation process is reduced, and the battery manufacturing yield is improved.

The invention relates to the technical field of solar cell preparation, and discloses a laser patterned polycrystalline silicon passivation cell, a preparation method and a photovoltaic module. The preparation method comprises the following steps: preparing a passivation contact structure and an oxidation film on the surface of a silicon substrate; laser patterning processing is carried out on the surface of the silicon substrate, the passivation contact structure and the non-metallization area of the oxidation film, so that the processed non-metallization area is not subjected to alkali etching resistance, and doping atoms are pushed into the silicon substrate through laser diffusion to form a doping area; performing alkali wash etching to form an alkali wash etching region etched into the silicon substrate, and leaving a doped region on the silicon substrate exposed in the alkali wash etching region; respectively depositing a passivation antireflection film and an antireflection film on the front surface and the back surface of the silicon substrate; and preparing the metal electrode. According to the preparation method, parasitic absorption loss can be avoided, the transverse transmission capability of internal carriers can be enhanced, the light utilization rate and the photoelectric conversion efficiency of the cell are further improved, the process window is larger, and the process steps are simple.

The invention provides a TBC cell grooving method and a TBC cell preparation method and application, and relates to the technical field of solar cells, and the TBC cell grooving method comprises the following steps: preparing a first tunneling oxide layer, a P-Poly layer and a first BSG layer on the back surface of a cell substrate in sequence, and removing the first BSG layer in a preset negative electrode region through first laser treatment; and carrying out thermal oxidation treatment on the P-Poly layer to oxidize the P-Poly layer in the preset negative electrode region into a second BSG layer, and removing the second BSG layer and the first tunneling oxide layer in the preset negative electrode region by adopting second laser treatment to obtain the cell with the groove in the preset negative electrode region. According to the invention, a mode of laser patterning, thermal oxidation and laser patterning preparation is adopted at the slotting position of the preset negative electrode region, so that the silicon substrate is not damaged.

The invention relates to a TBC solar cell and a preparation method thereof. The preparation method comprises the following steps: carrying out primary double-sided polishing; forming a first tunneling oxide layer and a boron-doped polycrystalline silicon layer on two sides; performing first laser patterning on the back surface, and removing the borosilicate glass layers in the N region and the isolation region; performing double-sided polishing for the second time to remove the first tunneling oxide layer and the boron-doped polycrystalline silicon layer of the N region and the isolation region; forming a second tunneling oxide layer and a phosphorus-doped polycrystalline silicon layer on two sides; performing secondary laser patterning on the back surface, and removing the phosphorosilicate glass layers in the P region and the isolation region; performing wet etching on the front surface to remove all layers on the front surface, and removing a side surface winding plating layer; performing double-sided texturing, corroding a P region to a boron-doped polycrystalline silicon layer, corroding an N region to a phosphorus-doped polycrystalline silicon layer, corroding an isolation region to a silicon wafer, and forming a textured surface on the isolation region on the back surface of the silicon wafer and the front surface of the silicon wafer; depositing a passivation layer and an antireflection layer on two sides; and preparing a positive electrode in the back P region and preparing a negative electrode in the N region. The preparation method is simple in process and convenient to operate, and the conversion efficiency of the battery can be improved.

The invention discloses a reconfigurable acoustical holography modulation method and device based on a crystalline polymer. The programmable acoustical holography device is composed of a single-layer photoresponse crystalline polymerization flat plate, is switched between two phases when the temperature irradiated by laser changes, has a crystalline state and a non-crystalline state, and reversibly changes along with the temperature. Space sound field modulation can be realized by spatially arranging the coding units, the crystalline polymer flat plate subjected to laser patterning phase change is recovered to the previous crystalline state after being cooled, the patterned coding acoustical holography disappears, and new phase acoustical holography is written in, so that a new sound field modulation function is realized. According to the programmable phase acoustical holography device based on the crystalline polymer, the incident plane wave of the probe can be modulated into any three-dimensional complex sound field, and the programmable phase acoustical holography device is of a complete plane type, is matched with underwater acoustic impedance, and is high in acoustic energy coupling efficiency, compact in structure, easy to prepare and low in price.

The invention provides a method for generating a pattern or an image on a cake by using an AI model, and the method at least comprises the following steps: providing a UI module for a user to input keywords and descriptions; generating an image of a black and white vector according to the input content by using an AI-based image module; processing the 2D image into a digital instruction through an image converter module; sending the digital instruction to a laser patterning module; and applying a pattern to the biscuit surface using a laser patterning module.

The invention relates to the technical field of photovoltaic cells, and discloses a selective passivation contact structure, a preparation method thereof and application of the selective passivation contact structure to preparation of a selective TOPCon cell. The method comprises the steps that a first tunneling oxide layer, first thin intrinsic amorphous silicon with the high crystallization rate and second thick intrinsic amorphous silicon with the low crystallization rate are sequentially prepared on the back face of a silicon wafer; boron diffusion doping is carried out, so that the first boron-doped polycrystalline silicon and the second boron-doped polycrystalline silicon have difference in doping concentration and crystallization rate; in the alkali etching process after laser patterning, first boron-doped polycrystalline silicon and a first tunneling oxide layer in a back non-electrode contact area are reserved by utilizing the etching rate difference of an alkaline solution on BSG and two layers of boron-doped polycrystalline silicon with different doping concentrations and crystallization rates; and the first tunneling oxide layer, the first boron-doped polycrystalline silicon and the second boron-doped polycrystalline silicon in the back electrode contact region are reserved. According to the method, the process steps can be simplified, parasitic absorption and recombination are reduced, passivation and transverse transmission are improved, and the cell efficiency is improved.

The invention belongs to the technical field of light field modulation, and particularly relates to a light field modulation method based on a Fabry-Perot microcavity internal device. The method comprises the following steps: based on a micro-nano light processing scheme, constructing a Fabry-Perot microcavity laser based on intracavity low-light element light field shaping, and then placing the laser in a light field test system; the method comprises the following steps: (1) detecting an output laser pattern, and controllably constraining and modulating an intracavity light field by adjusting the position of a laser; (2) detecting an output laser spectrum, further adjusting the pumping energy to obtain a relation between a spectrum peak value and the pumping energy, and realizing high-quality factor single-mode laser; by designing the matching relation between the optical continuous interface or diffraction structure configuration and the micro-cavity configuration in the micro-cavity laser, the performance parameters of the Fabry-Perot micro-cavity and the modulation of the intra-cavity light field can be realized, so that the high-quality factor micro-cavity laser and the customized output of the light field in a specific laser mode are realized.

The invention relates to the technical field of photovoltaic cell manufacturing, and provides a photovoltaic cell film layer laser patterning method, device, system and equipment and a medium, and the method comprises the steps: obtaining a preset patterning film opening depth of a photovoltaic cell; establishing a corresponding relation between the PSG thickness of the photovoltaic cell and the laser processing power required for reaching the preset graphical film opening depth; scanning by using an interference sensor to obtain the PSG thickness of the photovoltaic cell; and the laser processing power is adjusted in real time according to the PSG thickness and the corresponding relation, so that uniform laser patterning of the photovoltaic cell film layer is completed according to the preset patterning mold opening depth. At least the problem that uniformity and efficient production are difficult to consider in existing photovoltaic cell laser film opening can be solved.

The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

The invention relates to the technical field of solar cells, and discloses a TBC cell and a preparation method thereof.The preparation method comprises the steps that a tunneling layer and an intrinsic amorphous silicon layer are prepared on the back face of a silicon wafer; a first barrier layer is locally prepared on the back surface of the intrinsic amorphous silicon layer; boron diffusion enables the intrinsic amorphous silicon layer in a non-first barrier layer region to be converted into a boron-doped polycrystalline silicon layer; removing the local first barrier layer through laser patterning to expose the intrinsic amorphous silicon layer in a laser area; performing wet etching to form a Gap region, and exposing the boron-doped polycrystalline silicon layer and the intrinsic amorphous silicon layer in a non-laser region; locally preparing a second barrier layer on the back surfaces of the Gap region silicon wafer and the boron-doped polycrystalline silicon layer; phosphorus diffusion enables the exposed intrinsic amorphous silicon layer to be converted into a phosphorus-doped polycrystalline silicon layer; removing the second barrier layer and performing texturing; according to the method, the Gap region can be easily formed, the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer have no height difference, the working procedures are few, the damage is little, the cost is low, and the battery efficiency can be improved.

The invention discloses a dark spot repairing method, a display panel and a display device.The dark spot repairing method comprises the steps that dark spot pixels in the display panel are determined, the display panel comprises a substrate, and each dark spot pixel comprises a first electrode, a light-emitting material layer and a second electrode which are sequentially arranged in a stacked mode in the direction away from the substrate; a laser pattern is generated, the laser pattern comprises a plurality of laser sub-patterns which are arranged in a nested mode from inside to outside, and the energy of the laser sub-patterns is smaller than the ablation energy of the second electrode; and irradiating the second electrode of the dark pixel by using the laser pattern so as to repair the dark pixel. According to the dark spot repairing method provided by the invention, the dark spot repairing effect can be improved, and the dark spot repairing efficiency can be improved.

The invention provides a crystalline silicon cell and a manufacturing method thereof, the crystalline silicon cell comprises an N-type silicon substrate, a tunneling oxide layer, an N + poly layer, AIOx / SiNx, a silver metal electrode, a P + layer and an aluminum metal electrode, and the manufacturing method of the crystalline silicon cell comprises the following operation steps: S1, double-sided cleaning and texturing: adopting an N-type silicon wafer with the size of 182.2 * 183.75, cleaning and texturing the surface of the silicon wafer with alkali, and cleaning and texturing the surface of the N-type silicon wafer with the size of 182.2 * 183.75; s2, phosphorus doping is carried out, an N + layer is formed, a thin oxide layer is deposited firstly, and then phosphorus doping is completed through a low-pressure diffusion furnace. According to the crystalline silicon cell and the manufacturing method thereof, the use amount of silver paste is reduced by about 35% through texturing, phosphorus doping, laser patterning, etching alkali polishing, boron diffusion, cleaning, atomic layer deposition, front and back anti-reflection layer preparation, silk-screen printing and laser-assisted sintering and through a cell back aluminum grid line laser induction process.

The invention discloses an image recognition and precision control system for laser imaging equipment, which relates to the technical field of laser imaging equipment and comprises an edge fracture recognition module, a geometric consistency calculation module, a path fusion reconstruction module, a contour consistency verification module and a parameter self-regulation module. And the path fusion reconstruction module is used for constructing a connection section based on edge tail end trend consistency and curvature similarity results, fitting a fracture path by adopting a Bessel interpolation algorithm with a curvature penalty term, and generating a complete processing contour meeting a continuity requirement. According to the method, the problem that the processing path is discontinuous due to pixel-level edge fracture in the image acquisition stage in laser imaging processing is solved, geometric consistency identification of the non-closed curve edge and automatic fusion of the fracture path are realized, a continuous closed high-precision processing contour is generated, and the image identification robustness and the processing stability are improved.

The invention provides a preparation method of a boron-doped selective emitter, the emitter and a TOPCon battery, and relates to the technical field of TOPCon batteries. The preparation method comprises the following steps: depositing a borosilicate glass layer on the front surface of a textured silicon wafer through a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; removing the borosilicate glass layer in a non-fine grid region on the front surface of the silicon wafer through a laser patterning process to obtain the silicon wafer of which the borosilicate glass layer in a fine grid region on the front surface of the silicon wafer is reserved; forming a shallow doped region in a non-fine grid region on the front surface of the silicon wafer through a boron diffusion process, and forming a primary heavily doped region on a borosilicate glass layer in a fine grid region on the front surface of the silicon wafer; and pushing the boron source in the primary heavily doped region into the silicon wafer through an SE process to form a secondary heavily doped region so as to obtain the boron-doped selective emitter. The preparation method can reduce the proportion of concentric circles generated by silicon wafer oxygen precipitation caused by a high-temperature process, further reduces the contact resistivity of the front metal semiconductor, and improves the efficiency of the cell.

The invention relates to a preparation method of a modified zinc negative electrode and an aqueous zinc ion battery, and relates to the technical field of aqueous zinc ion batteries. The preparation method comprises the following steps: S10, performing patterning treatment on the surface of a zinc foil by adopting purple picosecond pulse laser to obtain a laser reconstructed zinc negative electrode; and S20, performing plasma treatment on the surface of the laser reconstructed zinc negative electrode by adopting a plasma technology to obtain the modified zinc negative electrode. According to the preparation method provided by the invention, through combined application of laser patterning treatment and plasma treatment, the growth of zinc dendrites on the surface of the modified zinc negative electrode and the occurrence of zinc negative electrode-electrolyte interface side reaction in the use process are reduced, the preparation process is simple, and the cost is low.

A laser assembly for controlling foliage growth including a body adapted to being mounted at a location in order to emit an axial direction defining laser pattern to establish a growth limiting boundary for any of a tree, shrub or like foliage. The laser pattern provides a high intensity light beam causing cellular damage to tissue of the foliage in order to retard growth into the affected area. The body further includes at least one eyepiece for issuing the laser pattern according to any of a pin-point or arcuate / sweep pattern. A clamp or post arrangement mounts the body in a multi-axial adjustable fashion.

The invention relates to the field of solar cells, and discloses a preparation method of a transverse p-n junction BC solar cell. Through ingenious step design, the BC solar cell with the novel transverse p-n junction structure can be obtained, the front face of the cell is free of grid lines, the two transverse portions are the n area and the p area respectively, and therefore the transverse p-n junction BC solar cell can be formed. According to the cell, the optical performance of the cell can be improved through simple structure adjustment without a complex laser graphical design process. In addition, a boundary groove of the p region and the n region is formed in the surface of the silicon wafer in advance through laser grooving treatment, in the boron diffusion process, even if boron doping atoms cross the designed boundary, the boron doping atoms cannot be longitudinally and inwards expanded to the surface of the silicon wafer substrate of the n region, and therefore for the back face of the silicon wafer, the boron doping atoms cannot be longitudinally and inwards expanded. After boron diffusion, the boundary between the n region and the p region can be highly consistent with the preset boundary, so that the problem of subsequent electrode printing accurate positions corresponding to the p region and the n region does not need to be worried about.

The invention discloses a multicolor laser film and a processing method thereof. The multicolor laser film comprises a coating and a carrier layer, multiple color areas are formed on the coating through laser, and limpid laser of the multiple color areas exists on the same coating to form a multi-color laser layer; the thickness of the multi-color laser layer is between 0.8 mu m and 2 mu m; a vacuum aluminum plating layer is arranged on the back surface of the coating of the multi-color laser layer; the vacuum aluminum-plated layer can be transferred or compounded on the carrier layer at one time through the adhesive layer, so that the whole structure presents a multi-color laser pattern; and the base film is adhered to the top surface of the multi-color laser layer and can play a role in protecting the surface of the multi-color laser layer. By adopting the arrangement, the multicolor laser film has the advantages of high precision and paper cost saving, and paper damage can be reduced during processing.

The invention discloses a laser performance system with a laser safety protection device, and relates to the field of laser safety protection. The method is applied to a laser performance system, wherein a laser performance control software system is used for determining an original given position of a galvanometer according to a designed artistic effect and generating a position control signal; the laser light source is used for providing a performance laser beam, and the laser beam projects a laser pattern in a projection area after being reflected by high-speed swinging of the galvanometer; the scanning galvanometer system controls the swing angle of a galvanometer reflecting mirror surface according to the position control signal, so that angle-controllable reflection of a laser beam is realized, and one laser beam is scanned into a laser pattern combined by different points, lines and surfaces; the laser safety protection device can monitor the working condition of the scanning galvanometer system in real time, laser output can be cut off immediately when it is found that the position of the galvanometer is abnormal, it is ensured that laser beams cannot damage surrounding personnel and objects, and the safety of the surrounding objects and personnel can be effectively protected when the laser performance system works.

The invention discloses a laser powder bed sheet pattern distortion real-time correction system and method based on a phase type light valve, and relates to the technical field of metal additive manufacturing. The system comprises a polarization laser, a beam expanding and collimating unit, a reflecting mirror, a phase-type spatial light modulator, a reflecting mirror, a relay optical system, a galvanometer / field lens system, a movable spectroscope, a reference plane mirror and a forming cylinder. A double-loop correction system with a position sensitive detector as an absolute reference and a wavefront sensor as direct feedback is constructed, information of the position sensitive detector and the wavefront sensor is unified in a phase domain through a frequency domain fusion algorithm, and a comprehensive compensation phase diagram capable of completing pattern generation and distortion correction at the same time is generated. And loading to a phase type light valve to carry out high-power laser patterning modulation, and melting metal powder of a powder bed.

The invention relates to a stretchable conductive polymer composite electrode, a preparation method and application thereof, the stretchable conductive polymer composite electrode is provided with a conductive network layer and a conductive polymer elastomer layer, and the conductive network layer and the conductive polymer elastomer layer are stacked to form a double-layer composite structure. The stretchable conductive polymer composite electrode disclosed by the invention has the beneficial effects of high conductivity, high stretchability, laser patterning and cyclic regeneration. And high conductivity can still be maintained under 100% tensile strain. According to the stretchable conductive polymer composite electrode, high-precision patterning can be achieved through the laser patterning technology, a flexible circuit with the minimum line width being 25 microns is prepared, and customized processing is achieved through digital design. The composite electrode can form a film again after solvent-assisted dissolution, so that closed-loop regeneration of an electrode material is realized.

The invention relates to PCB (Printed Circuit Board) manufacturing, in particular to a secondary double-sided exposure method for keeping high-precision alignment of a substrate pattern, which comprises the following steps of: capturing the position of an A-side target, calculating an accurate camera position of a laser pattern in the pattern according to a target capturing result of the A side, and exposing the A side to realize alignment of an A-side exposure pattern and a first-time exposure pattern; a laser pattern is used for shooting on the B surface while the A surface is exposed, the laser pattern is recognized on the B surface to serve as a target hole, the B surface is exposed, and the B surface exposure pattern is aligned with the A surface exposure pattern; according to the technical scheme provided by the invention, the defect that the A-side exposure pattern, the B-side exposure pattern and the first-time exposure pattern are difficult to achieve relatively high alignment precision in the prior art can be effectively overcome.

The utility model discloses a printed finished product collecting mechanism of a laser pattern coining transfer machine, which comprises a fixed disc and an adjusting disc, and a transmission shaft is rotatably connected to the middle position of the top of the fixed disc. By the adoption of the weighing sensor and the adjusting disc, during use, the total weight of collected products in the collecting barrel can be detected in real time through the weighing sensor, and when the detected weight is larger than a preset range, the generator is triggered to operate to drive the adjusting disc to rotate and move; the positions of the multiple sets of collecting barrels can be changed, replacement operation of the collecting barrels can be achieved, due to the fact that the collecting barrels completing collection are far away from a discharging area, treatment of the collecting barrels does not affect normal collecting operation, interference between devices is reduced, continuous collecting operation is achieved, and the working efficiency is improved. And the whole collecting efficiency is improved, better use is facilitated, and the device has the advantages of being high in operation efficiency, capable of achieving full-load replacement and small in feeding and discharging interference.

The application provides a kind of hemispherical harmonic oscillator precision trimming device and method based on femtosecond laser, comprising: vacuum system, femtosecond laser trimming system, fixture, workpiece motion system and mass imbalance test system;Femtosecond laser trimming system contains focusing module, laser light path, femtosecond laser, femtosecond laser energy continuous regulation module and femtosecond laser patterning and control system;Workpiece motion system includes workpiece rotation mechanism and workpiece translation mechanism, workpiece rotation mechanism is used to realize the rotation motion of fixture and hemispherical harmonic oscillator;Workpiece translation mechanism is connected with workpiece rotation mechanism, for realizing the three-direction translation motion of hemispherical harmonic oscillator and workpiece rotation mechanism;Mass imbalance test system contains resonator excitation module and test module;Resonator excitation module is used to excite hemispherical harmonic oscillator;Test module is used to detect the vibration of hemispherical harmonic oscillator that has been excited.The application effectively reduces the influence of major trimming pit on the stability of resonator standing wave and gyroscopic precision.

The invention provides a TBC battery and a preparation method thereof. The current density is remarkably improved by adjusting printing and laser patterns, reducing the area of a P region or / and an N region, increasing the area of a gap region, reducing the metal shielding area and improving the photon utilization rate; and compounding of a metal region is reduced, and Voc and passivation performance of the battery piece are improved. By polishing the gap region with the pyramid suede, the reflection of incident light in the silicon substrate can be increased, so that the Isc of the cell is improved, and meanwhile, as the initial gap region is protected by the mask layer and is not damaged by wet corrosion subsequently, the height difference between the gap region and the boron / phosphorus diffusion layer can be reduced, the transverse transmission of carriers in the silicon substrate is facilitated, and the FF is improved. According to the TBC battery prepared by the method, under the condition that the number of partitions on the back surface of the battery is not changed, the areas of the P region and the N region are reduced, so that the area of the gap region is increased, the metal shielding area is reduced, the photon utilization rate is improved, and the current density is obviously improved; and compounding of a metal region is reduced, and Voc and passivation performance of the battery piece are improved.

The invention belongs to the field of transfer membranes, and particularly relates to a scratch-resistant transfer membrane material and a preparation process thereof. The preparation method is based on blending of rigid components and flexible resin and intermolecular crosslinking reinforcement. According to the coating, waterborne polyurethane resin is used as a main film-forming material, and meanwhile, high-hardness waterborne acrylic resin with a specific proportion is doped, so that the cured coating has hardness for resisting deformation and elasticity for absorbing stress. On the basis, an environment-friendly cross-linking agent is introduced into the formula of the coating, and the auxiliary agent chemically reacts with an active functional group on a resin molecular chain in the baking process, so that the cohesion strength and the overall durability of the coating are enhanced. And the compactness of the coating is further improved through the cross-linked structure, so that the coating has better tolerance to solvents and heat in subsequent processing, and the definition of laser patterns and the gloss of an aluminum-plated layer are guaranteed. And the final product meets the strict solvent residue limit standard, and is suitable for the packaging field with higher safety requirements.

The present invention discloses a roll-to-roll semi-automatic preparation method and system for flexible optoelectronic devices, relating to the technical field of flexible optoelectronic device manufacturing. The method comprises: using a roll-to-roll slit coater to slit-coat a functional material onto a laser P1 patterned coil, obtaining a flexible coil coated with a light absorbing layer and an interface layer; performing machine vision inspection using a physical coil archive to obtain a coil digital twin archive; transferring the flexible coil coated with the light absorbing layer and the interface layer to a roll-to-roll laser scribing device for laser P2 scribing to obtain a P2 patterned coil; and packaging and cutting the P3 patterned coil using a laminated packaging method based on coil packaging instructions and electrical cutting instructions to obtain a flexible optoelectronic device. Through process flow design, the present invention improves device processing accuracy and performance, enhances process flexibility, and is more suitable for industrial production.

A method and system for data acquisition in online optical inspection for additive manufacturing (AM), comprising the steps of: (a) acquiring optical data by applying a plurality of continuous or pulsed parallel laser beams onto at least one region of interest (108) during the AM process, the at least one region comprises finite static or moving locations including in a cooling region and a printed region (210); and (b) recording reflected laser patterns (110) using at least one image sensor (204) positioned to capture interactions between the plurality of parallel laser beams and the at least one region of interest; the surfaces of the at least one region become solid for each subsequent deposition layer, concurrently with the recording of changes in the reflected laser patterns over at least one image sequence; the changes include abnormal surface geometric profile patterns during material cooling with underlying subsurface defects.