This invention belongs to the field of third-generation
semiconductor material
processing technology. It discloses a method and
system for
laser-based lift-off of curved
silicon carbide. This invention establishes a target curved surface model and generates a corresponding three-dimensional
processing path. During
laser scanning, the beam
wavefront is modulated in real time, and the
lateral position and depth of the focus point within the material are simultaneously controlled. Optical aberrations caused by the material's high
refractive index are compensated for. The entire process requires no mechanical movement of the focusing axis, forming a continuous and precise three-dimensional modification layer within the
ingot. Finally, external force is applied along this modification layer to achieve low-damage, high-efficiency curved surface lift-off. This invention overcomes the limitation of traditional
laser lift-off, which can only obtain planar wafers. It can directly construct any preset three-dimensional curved surface separation path within a
silicon carbide ingot with a flat surface, thereby lifting out
silicon carbide wafers with specific curvatures such as convex, concave, or free-form surfaces in a single operation.