The application belongs to the technical field of back contact cells, and particularly relates to a low-scratch back contact
cell and a preparation method thereof, which comprises the following steps: S2, sequentially forming a first
semiconductor layer and a
mask layer on the back surface of a
silicon wafer; S3, performing
etching opening on the back surface to form a second
semiconductor opening area; S4, performing texturing and cleaning; S5, sequentially forming a third
semiconductor layer and a sacrifice layer on the front surface of the
silicon wafer; S6, performing groove cleaning on the back surface and the second semiconductor opening area obtained in S5, wherein the groove cleaning comprises acid solution cleaning, RCA cleaning and
backwashing, and the sacrifice layer is removed in the RCA cleaning and
backwashing; and S7, depositing a second semiconductor layer on the back surface. The groove cleaning method is used to replace the chain cleaning method, the back surface plating layer can be fully removed, the front surface anti-reflection layer is protected from
corrosion, the anti-reflection effect of the front surface is not affected, mechanical damage or
pollution of the back surface of the
silicon wafer can be avoided, the overall
passivation level can be improved, the back surface scratch can be reduced, and the
fill factor and the
cell efficiency can be improved.