43results about "Hydride purification/stabilisation" patented technology

A process and apparatus for the decontamination of gaseous contaminants (especially oxygen, carbon dioxide and water vapor) from hydride gases (including their lower alkyl analogs) down to <=100 ppb contaminant concentration are described. The critical component is a high surface area metal oxide substrate with reduced metal active sites, which in various physical forms is capable of decontaminating such gases to <=100 ppb, <=50 ppb or <=10 ppb level without being detrimentally affected by the hydride gases. The surface area of the substrate will be >=100 m2/g, and preferably 200-800 m2/g. Oxides of various metals, especially manganese or molybdenum, can be used, and mixtures of integrated oxides, or one type of oxide coated on another, may be used. The substrate is preferably retained in a hydride-gas-resistant container which is installed in a gas supply line, such as to a gas- or vapor-deposition manufacturing unit. The invention provides final decontamination for hydride gas streams intended for gas- or vapor-deposition formation of high purity LED, laser (especially blue laser), electronic, optical or similar products, and can be used in combination with upstream preliminary decontamination process and/or upstream or downstream solid particulate removal units.

A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

Purification material for removing a contaminant from an impure hydride gas comprising an adsorbent comprising a reduced metal oxide on a porous support and a desiccant. The porous support may be selected from the group consisting of activated carbon, alumina, silica, zeolite, silica alumina, titania, zirconia, and combinations thereof. The reduced metal oxide may comprise one or more metals selected from the group consisting of Group I alkali metals (lithium, sodium, potassium, rubidium, and cesium), Group II alkaline earth metals (magnesium, calcium, strontium, and barium), and transition metals (manganese, nickel, zinc, iron, molybdenum, tungsten, titanium, vanadium, cobalt, and rhodium). The desiccant may be selected from the group consisting of hygroscopic metal salts, zeolites, single metal oxides, mixed metal oxides, and combinations thereof.

A new class of metal hydride alloy and processes for forming these alloys is disclosed. The alloys are comprised essentially of organically soluble metal hydrides and single molecular layer type transition metal dichalcogenides. They are produced via a non-metallurgical route in organic solvents under mild conditions. These alloys have exhibited improved qualities in battery applications.

A method for hydride gas purification uses materials having at least one lanthanide metal or lanthanide metal oxide. The method reduces contaminants to less than 100 parts per billion (ppb), preferably 10 ppb, more preferably 1 ppb. The material can also include transition metals and transition metal oxides, rare earth elements and other metal oxides. The invention also includes materials for use in the method of the invention.

The invention discloses technology for preparing high-purity diborane in a rectification and adsorption combined purifying mode, which is mainly characterized in that a feed gas inlet pipe, a reboiler outside which a reboiler heating jacket is arranged, a filled tower outside which a filled tower cooling jacket is arranged, a condenser, a low-boiling impurity discharge pipe, a liquid product (high-purity B2H6) take-out pipe, a product receiving groove, a high-boiling impurity discharge pipe and a valve are assembled together through a connecting pipeline according to the system function. The technology has reasonable design and convenient use, and is ideal high-purity diborane preparation technology.

The invention relates to a flotation method and application of alpha-AlH3, and belongs to the technical field of energetic materials. Alpha crystal type AlH3 and non-alpha crystal type AlH3 have different inherent properties such as physical and chemical properties, surface adsorption characteristics, crystal appearance characteristics and the like, so that high-efficiency separation of alpha crystal type AlH3 and non-alpha crystal type AlH3 is realized by adopting a specific flotation solution by virtue of a separation and purification function of ultrasonic waves, and then high-quality alphacrystal type AlH3 and non-alpha crystal type AlH3 are obtained. Safety of an application of the high quality alpha crystal type AlH3 in composite high-energy solid propellants is verified through impact sensitivity and friction sensitivity experiments. The high-quality alpha crystal type AlH3 has high hydrogen content, and slurry sensitivity of the high-energy propellants based on the high-quality alpha crystal type AlH3 is low.

The invention relates to an antioxidation handling method of a light rare earth metal hydride and belongs to the field of materials technology. The method comprises the following specific steps: (1) carrying out dehydration and deoxygenization treatments on a solvent so as to prepare an anhydrous anaerobic solvent; (2) dissolving an adhesive in the anhydrous solvent to prepare a glue solution; (3) dropping the above glue solution into a light rare earth metal hydride, stirring and suspending to form a glue solution coated light rare earth metal hydride; (4) filtering the solution-coated metal hydride and drying to obtain the light rare earth metal hydride which has undergone stability processing. The glue solution also can be directly added into the light rare earth metal hydride; the glue solution and the light rare earth metal hydride are kneaded to form a flexible ball; the flexible ball undergoes pelleting and drying is carried out so as to obtain the light rare earth metal hydride. According to the invention, the air and water can be isolated effectively. Thus, the safety problem of the light rare earth metal hydride stored and used under natural conditions is solved.

BF3, CO2 or both are removed from a mixture containing these gases with B2H6 by contacting the mixture with an inorganic hydroxide such as LiOH. B2H6 is synthesized by contacting BF3 with KBH4.

The invention relates to CeH2.5-NaH-Al composite hydrogen storage material and preparation method thereof. The composite hydrogen storage material is prepared by mixing 1-4 percent mol of CeH2.5 with grain size of less than 0.5mum and 48-49.5 percent mol of NaH as well as 48-49.5 percent mol of Al through hydrogenation and ball-milling, wherein the ratio of NaH to Al is 1:1. The composite material has effective hydrogen discharge capacity reaching 4.3wt% under the conditions that the temperature is 150 DEG C and the atmosphere pressure is 1, reversibly absorbs the hydrogen of above 4.9 wt% under the conditions that the temperature is 120 DEG C and the hydrogen absorption pressure is 10.0MPa, and has better cyclical stability.

The invention is a method and apparatus for removing metal compounds from ultra-high purity gases using a purifier material comprising a high surface area inorganic oxide, so that the metals do not deposit on a sensitive device and cause device failure.

The invention discloses to a refining adsorbent for silane gas, phosphorane gas, arsine gas or borane gas and a preparation method thereof, relating to a gas refining adsorbent and a preparation method. The invention solves the problems that the removal rate of foreign gas in the silane gas, the phosphorane gas, the arsine gas or the borane gas by adopting the prior palladium powder adsorbent is low, thereby needing further assistant decomposition. The refining adsorbent consists of a carrier and a metallic aluminum layer on the surface of the carrier. The preparation method is as follows: in the presence of hydrogen gas, mixed gas of the hydrogen gas and aluminum methide is sprayed on the surface of the carrier in the temperature of 600 to 650 DEG C so as to obtain the refining adsorbent for the silane gas, the phosphorane gas, the arsine gas or the borane gas. Under the condition that the assistant decomposition is not added, the refining adsorbent of the invention is tested to show a result that the removal rate of CO2 is higher than 95 percent; the removal rate of CH4 is higher than 98 percent; the removal rate of C2H6 is higher than 98 percent; the removal rate of O2 is higher than 99.8 percent; the removal rate of CO is higher than 95 percent; and the removal rate of water vapor is higher than 99.6 percent.

The present invention provides compositions comprising a metal amidoborane and an amine, and processes for preparing the metal amidoborane compositions. In particular, the process comprises contacting ammonia borane with a metal amide in the presence of an amine solvent to form the metal amidoborane composition. The invention also provides methods for generating hydrogen, wherein the method comprises heating the metal amidoborane composition such that hydrogen is released.

Complex hydrides based on Al(BH₄)₃ are stabilized by the presence of one or more additional metal elements or organic adducts to provide high capacity hydrogen storage material.

The invention relates to a synthesis and purification method of arsine. The method comprises the following steps: 1. putting zinc powder and arsenic powder into a quartz vessel, uniformly mixing, putting into a stainless steel reaction tank, vacuumizing, introducing high-purity inert gas, and pressurizing and heating to obtain zinc arsenide powder; 2, putting the zinc arsenide powder into a reactor, and adding dilute sulfuric acid to react to generate crude arsine gas; 3, introducing the crude arsine gas into an adsorption device to obtain arsine gas; 4, arsine gas is captured through a liquidnitrogen cold trap, the arsine gas is condensed into liquid arsine, non-condensable gas is pumped out through a vacuum pump, a liquid nitrogen tank outside the cold hydrazine is taken down, arsine isvolatilized, and pure arsine gas is obtained; and 5, introducing the pure arsine gas into a pre-treated clean steel cylinder for storage to obtain a finished product. Impurities in arsine gas can beeffectively reduced, the purity of arsine is improved, and meanwhile, the addition of an adsorbent and the selection of a molecular sieve are carried out in one device, so that the reaction efficiencycan be improved.

The invention provides a method for removing alpha '-crystal form aluminum hydride. The method comprises the following steps: 1. In an inert dry atmosphere, taking aluminum hydride to be purified, adding a solvent, and uniformly mixing; 2, transferring the uniformly mixed solution obtained in the step 1 to a reaction kettle, sealing the reaction kettle, heating the reaction kettle to 100-160 DEG C, and carrying out a constant temperature reaction; and 3, after the reaction is finished, naturally cooling and filtering to obtain a product, namely pure-phase alpha-crystal form aluminum hydride. According to the method disclosed by the invention, the alpha'-crystal form aluminum hydride can be completely and thoroughly removed, the purity of the finally obtained product is high and is alpha crystal form, and the alpha'-crystal form cannot be detected in the finally obtained product. According to the method, the amount of the used solvent is small, the reaction device is simple and easy tooperate, and the obtained product is free of alpha'-crystal form aluminum hydride. The method is mainly used for removing alpha'-crystal form aluminum hydride.

The invention relates to a temperature control synthesis device. The temperature control synthesis device comprises: a cylindrical tank body, which is provided with a middle cavity and a sealed annular inner cavity surrounding the middle cavity, wherein the sealed annular inner cavity is used for accommodating a reaction material; a driving device, which is in transmission connection with the cylindrical tank body and can drive the cylindrical tank body to rotate around the axis of the cylindrical tank body, wherein the axis of the cylindrical tank body is arranged in a horizontal or inclinedstate; a temperature control system, which comprises a heat exchange medium source and a sprayer connected with the heat exchange medium source, wherein the sprayer comprises an inner sprayer corresponding to the middle cavity and spraying towards the cavity wall of the middle cavity and an outer sprayer located on the outer side of the cylindrical tank body and spraying towards the outer side face of the cylindrical tank body. Reaction raw materials are in full contact through rotation of the tank body, in the rotating process, the materials are mainly scattered on the cavity wall face of theannular inner cavity, the reaction temperature can be effectively controlled by spraying temperature control over the interior and the exterior of the cylindrical tank body, and the device can be used for synthesizing diborane and other substances sensitive to the reaction temperature.

The invention particularly relates to a method for reducing the activity of high-activity lithium hydride powder, which comprises the following steps: mixing the high-activity lithium hydride powder with a substance for reducing the activity of the high-activity lithium hydride powder to obtain a mixture; and standing the mixture in the air, so as to reduce the activity of the high-activity lithium hydride powder to a state that combustion and explosion cannot happen during digestion. According to the method for reducing the activity of the high-activity lithium hydride powder provided by the invention, the activity of the high-activity lithium hydride powder can be quickly reduced, so that the high-activity lithium hydride powder cannot be combusted, exploded and the like in a digestion process, and the safety risk of digestion of the lithium hydride powder is reduced.

A process and a resulting product by process of an aluminum hydride which is modified with by physically combining in a ball milling process an aluminum hydride with a triammonium salt of aurin tricarboxylic acid. The resulting product is an aluminum hydride which is resistant to air, ambient moisture, and liquid water while maintaining useful hydrogen storage and release kinetics.