Synthesis and purification method of arsine

A purification method and arsine technology, applied in chemical instruments and methods, hydride purification/stabilization, arsenic/antimony hydride, etc., can solve the problems of high cost, limited promotion, low adsorption efficiency, etc.

Inactive Publication Date: 2021-03-19
深圳市博纯半导体材料有限公司 +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] At present, there are also published arsine purification methods in China, which mainly use gallium-indium alloy liquid deep adsorption dehydration and oxygen to obtain electronic-grade arsine. However, this adsorption method is not re...

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  • Synthesis and purification method of arsine

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[0065] In order to make the objects and advantages of the present invention clearer, the present invention will be further described below in conjunction with the examples; it should be understood that the specific examples described here are only for explaining the present invention, and are not intended to limit the present invention.

[0066] Preferred embodiments of the present invention are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are only used to explain the technical principle of the present invention, and are not intended to limit the protection scope of the present invention.

[0067] It should be noted that, in the description of the present invention, terms such as "upper", "lower", "left", "right", "inner", "outer" and other indicated directions or positional relationships are based on the terms shown in the accompanying drawings. The direction or positional relationship shown is ...

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Abstract

The invention relates to a synthesis and purification method of arsine. The method comprises the following steps: 1. putting zinc powder and arsenic powder into a quartz vessel, uniformly mixing, putting into a stainless steel reaction tank, vacuumizing, introducing high-purity inert gas, and pressurizing and heating to obtain zinc arsenide powder; 2, putting the zinc arsenide powder into a reactor, and adding dilute sulfuric acid to react to generate crude arsine gas; 3, introducing the crude arsine gas into an adsorption device to obtain arsine gas; 4, arsine gas is captured through a liquidnitrogen cold trap, the arsine gas is condensed into liquid arsine, non-condensable gas is pumped out through a vacuum pump, a liquid nitrogen tank outside the cold hydrazine is taken down, arsine isvolatilized, and pure arsine gas is obtained; and 5, introducing the pure arsine gas into a pre-treated clean steel cylinder for storage to obtain a finished product. Impurities in arsine gas can beeffectively reduced, the purity of arsine is improved, and meanwhile, the addition of an adsorbent and the selection of a molecular sieve are carried out in one device, so that the reaction efficiencycan be improved.

Description

technical field [0001] The invention relates to the technical field of arsine synthesis, in particular to an arsine synthesis and purification method. Background technique [0002] Arsane is one of the very important Group V elements in electronic gases. Arsane is an important electronic special gas. It is mainly used in the semiconductor industry for N-type doping of epitaxial silicon, N-type diffusion in silicon, ion Implantation and growth of gallium arsenide and gallium arsenide phosphide, etc. In addition, arsine also has extremely important applications in optoelectronics, solar cells, and microblogging devices. [0003] Arsane cannot be synthesized simply by a single substance, but it can be obtained in the presence of a catalyst or under plasma irradiation. Usually, some metal arsenides are used to react with water or acid to prepare arsine. The reaction is fast and complete, and the product is Hydrogen is completely free, but the yield of arsine is usually less th...

Claims

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Application Information

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IPC IPC(8): C01B6/06C01B6/34
CPCC01B6/065C01B6/34C01B2210/0015C01B2210/002C01B2210/0042C01B2210/0051C01B2210/0062C01B2210/0098Y02P30/00
Inventor 陈国富龚施健于胜陈金彬林海宁
Owner 深圳市博纯半导体材料有限公司
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