Technology for preparing high-purity diborane in rectification and adsorption combined purifying mode

A process technology, the technology of diborane, is applied in the technical field of preparing high-purity diborane by means of rectification and adsorption combined purification, which can solve problems such as pollution, and achieve the effects of convenient use and reasonable design.

Inactive Publication Date: 2010-08-25
TIANJIN TAIHENG GASES
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology is not only reasonable in process and simple in preparation, but also in good quality. The p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Technology for preparing high-purity diborane in rectification and adsorption combined purifying mode
  • Technology for preparing high-purity diborane in rectification and adsorption combined purifying mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] With reference to Fig. 1, feed gas inlet pipe (1), the reboiler (2) of external reboiler heating mantle (10), the packing tower (3) of external packing tower cooling jacket (9), condenser (4), Low boiling impurity discharge pipe (5), liquid product (high purity B 2 h 6 ) take-out pipe (6), product receiving tank (7), high-boiling impurity discharge pipe (8), and valve (11) are assembled into one body by connecting pipeline (12) according to their system functions.

[0010] The invention adopts a process method for preparing high-purity diborane by low-temperature adsorption, rectification, separation and purification with a filling agent.

[0011] (1) Source and composition of raw materials

[0012] This method is applicable to the thick B that described method prepares 2 h 6 . rough B 2 h 6 , containing ratio B 2 h 6 H with a low boiling point 2 , N 2 , O 2 , Ar, CH 4 and other impurities, and than B 2 h 6 High boiling point (C 2 h 5 )2O, CH 3 Cl, C ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses technology for preparing high-purity diborane in a rectification and adsorption combined purifying mode, which is mainly characterized in that a feed gas inlet pipe, a reboiler outside which a reboiler heating jacket is arranged, a filled tower outside which a filled tower cooling jacket is arranged, a condenser, a low-boiling impurity discharge pipe, a liquid product (high-purity B2H6) take-out pipe, a product receiving groove, a high-boiling impurity discharge pipe and a valve are assembled together through a connecting pipeline according to the system function. The technology has reasonable design and convenient use, and is ideal high-purity diborane preparation technology.

Description

Technical field [0001] The invention relates to a process technology for preparing high-purity diborane, an alkane chemical product, in particular to a process technology for preparing high-purity diborane by a combination purification method of rectification and adsorption, which is suitable for chemical synthesis of diborane. Background technique [0002] At present, microelectronics technology is the main cornerstone of modern information technology and military technology, and it is one of the key factors to promote scientific and technological progress, industrial development, economic take-off and social advancement. Integrated circuit is the core of microelectronics technology, and its development level and industrial scale have become an important symbol to measure a country's economic strength. Electronic specialty gases (such as diborane), especially high-purity electronic gases as a new category of electronic chemical materials, are important factors restricting t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B6/10C01B6/34
Inventor 李中元
Owner TIANJIN TAIHENG GASES
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap