Purification adsorption agent for silicone hydride, phosphorane, arsine or borane gases and preparation method thereof

A borane gas and adsorbent technology, applied in the field of gas purification adsorbent and its preparation, can solve the problems of low impurity gas removal rate and the like

Inactive Publication Date: 2009-01-14
王少志
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the removal rate of impurity gas in silane, phosphine, arsine or borane gas is low by using palladium powd...

Method used

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  • Purification adsorption agent for silicone hydride, phosphorane, arsine or borane gases and preparation method thereof
  • Purification adsorption agent for silicone hydride, phosphorane, arsine or borane gases and preparation method thereof

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specific Embodiment approach 1

[0012] Embodiment 1: In this embodiment, the silane, phosphine, arsine or borane gas purification adsorbent consists of a carrier and a metal aluminum layer on the surface of the carrier.

specific Embodiment approach 2

[0013] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the carrier is activated carbon, zeolite or ceramsite. Others are the same as the first embodiment.

specific Embodiment approach 3

[0014] Specific embodiment three: In this embodiment, the silane, phosphine, arsine or borane gas purification adsorbent is prepared according to the following steps: spray the mixed gas of hydrogen and trimethylaluminum at a temperature of 600-650°C under a hydrogen atmosphere The surface of the carrier, that is to obtain silane, phosphine, arsine or borane gas purification adsorbent; wherein the molar ratio of hydrogen and trimethylaluminum in the mixed gas of hydrogen and trimethylaluminum is 1:5-10.

[0015] The hydrogen in this embodiment is high-purity hydrogen, and the trimethylaluminum is pure trimethylaluminum vapor.

[0016] In this embodiment, the thickness of the metal aluminum layer on the surface of the silane, phosphine, arsine or borane gas purification adsorbent can be determined according to needs, and is controlled by the spraying time and the spraying amount per unit time.

[0017] The preparation process of this embodiment is simple and easy to operate.

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Abstract

The invention discloses to a refining adsorbent for silane gas, phosphorane gas, arsine gas or borane gas and a preparation method thereof, relating to a gas refining adsorbent and a preparation method. The invention solves the problems that the removal rate of foreign gas in the silane gas, the phosphorane gas, the arsine gas or the borane gas by adopting the prior palladium powder adsorbent is low, thereby needing further assistant decomposition. The refining adsorbent consists of a carrier and a metallic aluminum layer on the surface of the carrier. The preparation method is as follows: in the presence of hydrogen gas, mixed gas of the hydrogen gas and aluminum methide is sprayed on the surface of the carrier in the temperature of 600 to 650 DEG C so as to obtain the refining adsorbent for the silane gas, the phosphorane gas, the arsine gas or the borane gas. Under the condition that the assistant decomposition is not added, the refining adsorbent of the invention is tested to show a result that the removal rate of CO2 is higher than 95 percent; the removal rate of CH4 is higher than 98 percent; the removal rate of C2H6 is higher than 98 percent; the removal rate of O2 is higher than 99.8 percent; the removal rate of CO is higher than 95 percent; and the removal rate of water vapor is higher than 99.6 percent.

Description

technical field [0001] The invention relates to a gas purification adsorbent and a preparation method thereof. Background technique [0002] High-purity silane, phosphine, arsine and borane gases are important raw materials for the production of semiconductor materials, but the silane, phosphine, arsine or borane gases prepared by existing methods are doped with a large amount of impurity gases , such as CO 2 、CH 4 、C 2 h 6 , O 2 , CO and water vapor, especially O 2 and water vapor have a very serious impact on the production of subsequent semiconductors; therefore, palladium powder adsorbents are currently used to remove impurity gases in silane, phosphine, arsine or borane gases, but the effective removal rate of palladium powder adsorbents for impurity gases Low, only 70% to 80%, and further assistance is needed to decompose. Contents of the invention [0003] The purpose of the present invention is to solve the problem that the removal rate of impurity gas in si...

Claims

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Application Information

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IPC IPC(8): B01J20/02B01J20/32C01B6/34C01B33/04C01B25/06
Inventor 王少志
Owner 王少志
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