19 results about "Carrier leakage" patented technology

The embodiment of the invention provides a board card correction method and device, a board card and a storage medium, and relates to the field of satellite communication. The method comprises the following steps of: acquiring a transmitting power calibration value and a receiving power calibration value which are measured in advance by an FPGA (Field Programmable Gate Array) of a board card, and acquiring a transmitting frequency point of a transmitting channel and a receiving frequency point of a receiving channel which are configured by a CPU (Central Processing Unit) according to a frequency point configuration strategy corresponding to carrier leakage correction when receiving a load leakage correction starting signal sent by the CPU; detecting the single carrier frequency power of a transmitting frequency point and the carrier leakage frequency power of a receiving frequency point under the condition that the CPU controls the transmitting channel to transmit the load leakage test signal; and carrying out carrier leakage correction on the board card according to the single carrier frequency power, the carrier leakage frequency power, the transmitting power calibration value and the receiving power calibration value, thereby realizing automatic carrier leakage correction on the board card without manual intervention and manual adjustment, and improving correction accuracy by introducing the transmitting power calibration value and the receiving power calibration value.

The invention discloses a quantum dot-based multi-axis electric field regulation entangled light source, which adopts a p-i-n diode structure, and sequentially comprises a GaAs layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer, an n-type doped layer and An Al < 0.15 > Ga < 0.85 > As layer and an Al < 0.33 > Ga < 0.67 > As layer are sequentially arranged above the n-type doped layer and jointly serve as a tunnel potential barrier to isolate the quantum dots from the n-type doped layer; the GaAs quantum dot layer is used for growing GaAs quantum dots in the Al < 0.33 > Ga < 0.67 > As layer by adopting a liquid drop etching method; an Al < 0.33 > Ga < 0.67 > As layer covers the quantum dots to serve as a blocking potential barrier, and carrier leakage is inhibited; and the top is a p-type doped layer. The wavelength-adjustable quantum dot entangled light source with high entanglement fidelity is realized, and the requirement of a quantum repeater in a quantum network can be met.

This invention proposes a board calibration method, apparatus, board, and storage medium, relating to the field of satellite communication. The method involves the board's FPGA acquiring pre-measured transmit power calibration values ​​and receive power calibration values. Upon receiving a carrier leakage correction start signal from the CPU, it acquires the transmit frequency point of the transmit channel and the receive frequency point of the receive channel, configured by the CPU according to the frequency point configuration strategy corresponding to carrier leakage correction. While the CPU controls the transmit channel to transmit a carrier leakage test signal, it detects the single-carrier frequency power of the transmit frequency point and the carrier leakage frequency power of the receive frequency point. Based on the single-carrier frequency power, carrier leakage frequency power, transmit power calibration value, and receive power calibration value, carrier leakage correction is performed on the board, thereby achieving automated carrier leakage correction of the board without manual intervention. Furthermore, the accuracy of correction is improved by introducing transmit power calibration values ​​and receive power calibration values.

The invention discloses a transmitting and receiving device and a carrier leakage calibration method. The device comprises a control module, a transmitting compensation module, a transmitter, a calibration switch module, a receiver and a receiving compensation module, when the loopback mode is started, the transmitting compensation module generates an analog direct-current signal, the transmitter converts the analog direct-current signal into an uncalibrated radio-frequency signal, and the uncalibrated radio-frequency signal enters the receiver through the calibration switch module; the receiver converts an uncalibrated radio frequency signal into an analog intermediate frequency signal, the receiving compensation module generates signal power according to the analog intermediate frequency signal, and the control module adjusts a direct current offset parameter sent to the receiver and a receiving compensation parameter sent to the receiving compensation module according to the signal power, and performs direct current offset calibration on the receiver; and the control module adjusts the transmission compensation parameter sent to the transmission compensation module according to the signal power, and carries out carrier leakage calibration on the transmitter. According to the invention, the calibration effect and the calibration stability under process deviation can be improved.

The present disclosure achieves cost reduction and mitigation of the effects of carrier leakage between pixels. A light-emitting device (10) includes a first electrode layer (21), light-emitting layers (25) of three colors, and a second electrode layer (29) stacked in this order, with various functional layers interposed therebetween. At least a portion of the functional layers is an integral common layer formed across the light-emitting layers of the respective colors, and the difference in intermediate gradation voltages in the current density-voltage characteristics of the light-emitting layers of the respective colors is 0.1-1.1 V.

This application provides a method and apparatus for detecting and evaluating carrier leakage signals in mobile terminals, belonging to the field of leakage detection technology. The method includes: performing carrier detection on mobile medical devices and surrounding mobile terminals in a hospital's mobile medical area to obtain carrier data; performing quantum spectrum analysis on the carrier data to determine the carrier leakage frequency band; calculating the leakage power density of the carrier leakage frequency band and the spectral overlap between the carrier leakage frequency band and the operating frequency band of the mobile medical device; determining an electromagnetic interference risk value based on the leakage power density and spectral overlap; generating a risk report when the electromagnetic interference risk value exceeds a preset first threshold; verifying the risk report using a deviation comparison method to obtain verification results, including inaccurate and accurate reports; and generating a risk warning based on the risk report corresponding to the accurate verification result. This application provides efficient technical support for leakage detection of medical devices in complex electromagnetic environments within hospitals.

The present invention provides a method and system for obtaining a compensation value for carrier leakage. The carrier leakage ranges of the I channel and the Q channel are set, and the compensation value of the training signal transmitted by the transmitting module is determined according to the carrier leakage ranges of the I channel and the Q channel. The receiving module receives the carrier leakage signal that appears when the training signal is transmitted. The receiving frequency of the receiving module and the transmitting frequency of the transmitting module differ by a first preset number of sub-carrier intervals. The carrier leakage signal is converted into a single-tone signal, and the power value of the single-tone signal is calculated. The compensation value is selected according to the power value, and the carrier leakage ranges of the I channel and the Q channel are updated according to the selected compensation value. The iteration is performed until the length of the carrier leakage range is less than a certain value. The deviation between the receiving frequency and the transmitting frequency is set to an integer multiple of the sub-carrier interval, and the influence of the receiver IQ imbalance on the carrier leakage is eliminated, so as to obtain a more accurate estimation of the carrier leakage.

The application discloses a fast recovery power device with embedded tunnel diode structure and a production method thereof, wherein the power device has a plurality of uniformly arrayed heavy doped regions with opposite doped types under a neutral body region, and the heavy doped regions form a tunnel PN junction structure with the doped regions with opposite doped types in the neutral body region; the tunnel PN junction structure can provide an additional minority carrier leakage conduction channel when the power MOSFET device is switched from a conducting state to a closed state, reduces the tail current when the device is closed, makes the power device quickly closed from an open state, and thus improves the working speed of the device and expands the frequency band range of the power device. The application realizes the fast recovery characteristic of the device through the process steps of adding the arrayed opposite heavy doped regions and rapid thermal annealing, makes the power device have the advantages of low cost and fast recovery, and breaks the barrier that the VDMOS power device can only be used in the medium and low frequency field applications.

The embodiment of the present application provides a radio frequency transceiving structure and a reader-writer, a programmable logic module is used to generate a digital carrier signal, the digital carrier signal is a signal containing different frequency bands; a radio frequency transmitting module is used to convert the digital carrier signal into an analog carrier signal and transmit the analog carrier signal outward, so that a radio frequency tag reflects a target signal back after receiving the analog carrier signal; a radio frequency receiving module is used to receive the analog carrier leakage signal and the target signal, and carrier cancellation is performed on the analog carrier leakage signal by taking the analog carrier signal of the radio frequency transmitting module as a reference signal, and the remaining useful signal is converted into a digital useful signal after the carrier cancellation; the programmable logic module is also used to divide the digital useful signal into processing signals of different frequency bands, and the processing signals are processed. The embodiment of the present application widens the frequency spectrum resource, and the target signal reflected by the radio frequency tag can carry more useful information.

The application discloses a secondary radar response transmitting circuit with high state isolation, a response transmitter and a responder, and relates to the technical field of secondary radar. The response transmitting circuit comprises a frequency source unit, a modulation unit, a signal amplification unit, a transceiving diversity unit and a detection unit which are electrically connected in sequence. The frequency source unit is powered on when receiving a frequency source power control signal and outputs a carrier signal, and is powered off when the frequency source power control signal is invalid. The modulation unit is used for modulating the carrier signal when receiving a transmitting code signal, and outputs a modulated radio frequency signal. The transmitting code signal is sent later than the frequency source power control signal, so that the carrier leakage of the frequency source before the modulation transmitting signal is suppressed. Finally, the signal amplification unit is used for amplifying the radio frequency signal, and the amplified signal is output to an antenna through the transceiving diversity unit and the detection unit. The problems that the carrier leakage influences the receiver work and reduces the sensitivity of the receiver are solved.

The invention discloses an epitaxial structure of a high-power quantum cascade laser suitable for a high-temperature working environment. The epitaxial structure comprises an InP substrate, an InP buffer layer, an InP lower limiting layer, an InGaAs lower waveguide layer, an InGaAs / InAlAs superlattice active region, an InGaAs upper waveguide layer, an InP upper limiting layer and an InP ohmic contact layer from bottom to top in sequence. The InGaAs / InAlAs superlattice active region comprises a lasing region and a relaxation region, the lasing region is a core region for electrons to generate laser through transition, the relaxation region is a channel for rapidly discharging the electrons through phonon scattering and injecting the electrons into the next lasing region, and the lasing region and the relaxation region are alternately cascaded to jointly realize an efficient process that one electron emits light for multiple times. Through a gradually-changed energy band structure, current carriers are prevented from escaping from a micro-strip above an upper lasing energy level, wave function overlapping between the high energy level and an upper excited state of an active region is reduced, current carrier leakage is inhibited, through effective strain compensation, net strain of an epitaxial material is reduced, and the requirements of a metal organic chemical vapor deposition epitaxial process are met.

The present invention proposes a semiconductor light-emitting element with a carrier leakage suppression layer, comprising a substrate, an n-type semiconductor, a quantum well, and a p-type semiconductor, arranged sequentially from bottom to top. A first carrier leakage suppression layer and a second carrier leakage suppression layer are disposed between the p-type semiconductor and the quantum well, with the first carrier leakage suppression layer positioned below the second carrier leakage suppression layer. Both the first carrier leakage suppression layer and the second carrier leakage suppression layer have electron effective mass distribution characteristics and dielectric constant distribution characteristics. The present invention regulates the interface variation angle and interface uniformity of the electron effective mass and dielectric constant at the interface between the first carrier leakage suppression layer and the quantum well, as well as at the interface between the second carrier leakage suppression layer and the first carrier leakage suppression layer and the p-type semiconductor, thereby modulating the interface energy band and interface band order at multiple interfaces, thereby raising the electron overflow barrier and reducing the probability of electron overflow into the p-type semiconductor.

The application discloses a zero intermediate frequency satellite communication signal processing method and system based on an embedded microcontroller, and the method comprises the following steps: encoding and framing original data, generating I / Q digital baseband waveforms through QPSK mapping, upsampling and shaping filtering, and converting analog signals through a double-channel DAC. In view of Sinc fading and adjacent channel leakage caused by the zero-order holding effect of the DAC, two-stage cascade suppression is adopted: the first stage of attenuation is performed in the digital domain; the second stage of physical filtering is performed in the analog domain between the DAC and the mixer by using the stop band notch characteristic of the symmetrical active differential low-pass filter circuit, and the independent direct current bias adjustment is used for IQ balance adjustment to eliminate the carrier leakage. Finally, the mixer is used for one-step up-conversion, and a power amplifier is used for emission. The method does not need closed-loop digital IQ correction, significantly reduces resource consumption, and improves the adjacent channel power ratio and radio frequency quality.

The application relates to the field of semiconductor optoelectronic technology, and particularly relates to a preparation method of a type-I quantum well structure based on a dipole design. The specific technical scheme is as follows: a GaSb substrate, a GaSb buffer layer and three periods of quantum well active region In x1 Ga 1‑ x1 As y1 Sb 1‑y1 / Al x2 Ga 1‑x2 As y2 Sb 1‑y2 , wherein 0 The application is based on a molecular beam epitaxy growth technology, Si donor impurities are doped in an InGaAsSb potential well layer, a valence band step is improved, the problem that the valence band step of a high-In-component well layer material in a type-I quantum well is reduced and the problem that carrier leakage is aggravated are solved, a quantum well structure with high radiation recombination efficiency is formed, and high-quality active region materials are provided for 3-5 mu m mid-infrared waveband lasers.

The invention relates to the technical field of lasers, and discloses a frequency-convertible semiconductor laser and a preparation method thereof, and the laser comprises a substrate which is selected from a sapphire / AlN composite substrate, a GaN single-crystal substrate or a patterned GaN substrate; the lower limiting layer is arranged on the substrate and is made of Al < x > Ga < 1-x > N; the lower waveguide layer is arranged on the lower limiting layer and is made of Al In Ga < 1-a-b > N; the lower waveguide layer is arranged on the substrate, the frequency conversion structure is arranged on the lower waveguide layer, the active layer structure is arranged on the frequency conversion structure, the upper waveguide layer and the electron blocking layer are arranged on the active layer structure, and the upper limiting layer is arranged on the electron blocking layer. And an electrode layer on the upper confinement layer. According to the invention, the frequency conversion structure is optimized through atomic-scale precision interface engineering, and the wavelength conversion efficiency and crystal integrity of the gallium nitride-based green laser are remarkably improved by combining quantum well growth dynamics regulation and control and carrier limiting capability enhancement, so that carrier leakage and a non-radiative recombination effect are synchronously inhibited, and the efficiency of the gallium nitride-based green laser is improved. And efficient and stable laser output is realized in a visible light wave band.

The invention relates to the technical field of semiconductor photoelectronics, in particular to a preparation method of an I-type quantum well structure based on dipole design. According to the specific technical scheme, a GaSb substrate is included, a GaSb buffer layer and a quantum well active region Inx1Ga1-x1Asy1Sb1-y1 / Alx2Ga1-x2Asy2Sb1-y2 of three periods are grown on the GaSb substrate layer through the molecular beam epitaxy technology, and x1 is larger than 0 and smaller than 1, x2 is larger than 0 and smaller than 1, y1 is larger than 0 and smaller than 1, y2 is larger than 0 and smaller than 1, y1 is larger than 0 and smaller than 1, and y2 is larger than 0 and smaller than 1. On the basis of a molecular beam epitaxial growth technology, Si donor impurities are doped into the InGaAsSb potential well layer, so that the valence band order is improved, the problems that the valence band order of a well layer material with a high In component in an I-type quantum well is reduced, and carrier leakage is aggravated are solved, the quantum well structure with high radiation recombination efficiency is formed, and the quantum efficiency is improved. And a high-quality active region material is provided for a middle-infrared band laser with the wavelength of 3-5 microns.

The present invention discloses a carrier leakage elimination device and method for high-power ultra-high frequency radio frequency identification. The device includes a power amplifier, a first directional coupler, a first 3dB bridge, a second 3dB bridge, a third 3dB bridge, two circulators, and an antenna. The output of the power amplifier is connected to the input of the first directional coupler, the output of the first directional coupler is connected to the first 3dB bridge, the first 3dB bridge is respectively connected to a circulator, and both circulators are connected to the second 3dB bridge, which is connected to the antenna. The two circulators are also connected to the third 3dB bridge, which is connected to the receiving signal terminal. The present invention can solve the carrier leakage problem of ultra-high frequency radio frequency identification readers or other microwave reflection communications when transmitting high-power signals.

The application provides a semiconductor laser emitter, characterized in that it comprises a cathode and an anode, and a first region and a second region; the first region comprises a capacitor, an inductor and a resistor; the second region comprises a capacitor, a power consumption module and an output power module; through the design, the DBR power consumption, the DBR resistance and the power consumption caused by carrier leakage of the semiconductor laser emitter can be determined.

Quantum cascade lasers (QCLs) are provided, which in embodiments comprise a plurality of stages, each stage comprising alternating quantum well layers and barrier layers, wherein each stage is configured, upon application of an electric field F across the plurality of stages, to inject carriers from a low energy state of an adjacent, upstream stage of the plurality of stages into a high energy state of a lasing stage of the plurality of stages, via tunneling injection through multiple barrier layers comprising barrier layers of the adjacent, upstream stage and barrier layers of the lasing stage, wherein carriers in the lasing stage undergo intraband transitions from an upper laser level of the lasing stage to at least one lower laser level of the lasing stage with the emission of laser light and without carrier leakage.