Extension developing method for high-power semiconductor quanta point laser material
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
- Publication Date
- 2009-07-08
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor lasers, in particular to a 1.02-1.08 micron band InGaAs / GaAs quantum dot epitaxy structure and a manufacturing method thereof. Background technique
[0002] An important application of semiconductor lasers in the 1.02-1.08 micron band can be used to pump fiber lasers. Because fiber laser has the characteristics of high gain, high slope efficiency, narrow line width, broadband tunable, good heat dissipation, compact structure, miniaturization, full curing and natural compatibility with transmission fiber, it is widely used in communication, military, medical and optical Information processing and other fields will have broad application prospects, especially in the field of optical communication. With the development of optical wavelength division and optical time division multiplexing technology, fiber lasers will be able to meet the higher requirements of communication systems for light sou...