Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ge/gesn heterojunction laser and its preparation method

A laser and heterojunction technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of many high-reflection coating layers, difficult process, easy to fall off, etc., to improve the limiting factor, simple process, Loss factor reduction effect

Active Publication Date: 2020-02-14
XIDIAN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 2. When the Fabry Perot resonator is used for the Ge-based laser, due to its large wavelength, the number of coating layers of the high-reflection film is also large, the process is difficult, and it is easy to fall off

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ge/gesn heterojunction laser and its preparation method
  • Ge/gesn heterojunction laser and its preparation method
  • Ge/gesn heterojunction laser and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] In order to solve the problem that the luminous efficiency of the traditional Ge-based laser is not high, the threshold current density is relatively large, and its preparation process is difficult, this embodiment provides a method for preparing a Ge / GeSn heterojunction laser and the Ge / GeSn heterojunction laser prepared by this method. GeSn heterojunction lasers.

[0049] See figure 1 and figure 2 , figure 1 It is a schematic cross-sectional view of a Ge / GeSn heterojunction laser of the present invention, figure 2 It is a schematic top view of the Ge / GeSn heterojunction laser of the present invention. The Ge / GeSn heterojunction laser structure of the present invention is as follows from bottom to top: substrate 1, first Bragg mirror layer 2, first n-type Ge layer 3, second n-type Ge layer 4, GeSn layer 5, The first p-type Ge layer 6, the second p-type Ge layer 7, the second Bragg mirror layer 8; the second Bragg mirror layer 8 is columnar, the first n-type Ge la...

Embodiment 2

[0085] See 4(a) to 4(h), and figure 1 In this embodiment, on the basis of the above-mentioned embodiments, the preparation method of the Ge / GeSn heterojunction laser and the prepared Ge / GeSn heterojunction laser of the present invention are described in detail as follows:

[0086] Step (1), please refer to Fig. 4 (a), select the silicon material on the insulator or the bulk silicon material as the substrate, usually the substrate 1 is rectangular, and use plasma enhanced chemical vapor deposition (PECVD) to grow the first Si / SiO 2 film layer.

[0087] The switch of the mass flowmeter is controlled by the computer, so that the reaction gas in the reaction chamber alternates in the SiH 4 (+Ar) and O 2 Exchange between, so that the decomposition of SiH 4 Deposition of polysilicon film and pure oxygen layer-by-layer plasma oxidation are carried out alternately.

[0088] The substrate 1 temperature was kept at 250°C, Si and SiO 2 The thicknesses are 143nm and 233nm respectiv...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
current densityaaaaaaaaaa
radiusaaaaaaaaaa
heightaaaaaaaaaa
Login to View More

Abstract

The invention discloses a Ge / GeSn heterojunction laser and a preparation method thereof. The method includes: growing a first Bragg reflective mirror layer on the surface of a substrate; growing a first n-type Ge layer on the surface of the first Bragg mirror layer; growing a second n-type Ge layer on the surface of the first n-type Ge layer; growing a GeSn layer on the surface of the second n-type Ge layer; growing a first p-type Ge layer on the surface of the GeSn layer; growing a second p-type Ge layer on the surface of the first p-type Ge layer; growing a second Bragg mirror layer on the surface of the second p-type Ge layer; etching a first cylinder and a second cylinder on the obtained structure; forming an electrode at the first step and the second step; finally forming a Ge / GeSn heterojunction lase is finally formed. The invention adopts GeSn material instead of traditional single Ge material to improve luminescence efficiency; By using P-I-N structure reduces the threshold current density. In addition, the preparation method of the invention is simple in process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a Ge / GeSn heterojunction laser and a preparation method thereof. Background technique [0002] As we all know, large-scale integrated circuits on silicon chips show the powerful signal processing functions of electronics, and the global optical fiber communication network shows the superior transmission performance of photons. Silicon-based optoelectronic integration combines the two advantages of electronic signal processing function and photon transmission performance to achieve high-speed, low-energy, and interference-free chip optical interconnection. At present, most of the commercial optoelectronic devices use III-V semiconductor materials, and its process is not compatible with the large-scale integration process, and the technology of bonding wafers to silicon wafers is expensive and has low yield, resulting in the optoelectronics of III-V and chips. H...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/32H01S5/30H01S5/125
CPCH01S5/125H01S5/3027H01S5/3223
Inventor 舒斌张利锋高玉龙胡辉勇王斌王利明韩本光张鹤鸣
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com