Short wavelength AlGaInP red light semiconductor laser

Abstract

A short wavelength AlGaInP red light semiconductor laser structurally comprises a substrate, a lower buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer, an upper buffer layer and an ohmic contact layer in sequence from the bottom to the top; the lower buffer layer is an AlxIn1-xP component gradual change layer, and x linearly gradually changes to 0.6 from 0.5; the upper buffer layer is an AlyIn1-yP component gradual change layer, and y linearly gradually changes to 0.5 from 0.6; the upper waveguide layer and lower waveguide layer are both (AlzGa1-z)0.6In0.4P; the lower limiting layer and upper limiting layer are both Al0.6In0.4P. By the AlInP component gradual change buffer layer, an In component of the limiting layers and the waveguide layers is reduced to 0.4, the refraction index of a material of the limiting layers is reduced, a bandgap of a material of the waveguide layers is increased, photons and carriers are better limited, and meanwhile, the quantum well layer can obtain short wavelength light of 590-620nm under a lower strain condition.

Description

technical field [0001] The invention relates to a short-wavelength red light semiconductor laser, which belongs to the technical field of semiconductor lasers. Background technique [0002] Red semiconductor lasers have the advantages of small size, long life, and high photoelectric conversion efficiency. They are gradually replacing traditional He-Ne gas lasers and ruby ​​solid-state lasers, and are widely used in optical disk reading and writing systems, barcode readers, and alignment markers. , medical care equipment and other fields. In addition, it is also a red light source for laser display devices such as laser TVs and portable projectors. [0003] Early red semiconductor lasers used AlGaAs material systems, such as 780nm AlGaAs semiconductor lasers for CD players. Since the storage density of an optical disc is inversely proportional to the wavelength of the laser, to increase the optical storage density, the lasing wavelength of the semiconductor laser must be re...

AI Technical Summary

Problems solved by technology

In the AlGaInP material used in the laser of this invention, the proportion of In is 0.49, the lattice constant matches the substrate GaAs, and the maximum bandgap material of the confinement layer is Al 0.51 In 0.49 P, while the quantum well GaInP has a certain thickness, its strain cannot be too large, that is, the In composition cannot deviate too much from 0.49, so the shortest lasing wavelength is around 630nm, and the shorter the wavelength, the greater the leakage current, and the semiconductor laser less efficient

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