A quantum dot interband cascade laser

Abstract

The application discloses an antimonide quantum dot interband cascade laser. The laser is prepared by sequentially preparing a lower confinement layer, a lower waveguide layer, a cascade region, an upper waveguide layer, an upper confinement layer and an InAs contact layer on a GaSb substrate. The laser disclosed in this application uses the quantum dot active region as the active region of the interband cascade laser, and utilizes the characteristics of the quantum dot material to effectively confine and utilize the carriers, so that the interband cascade laser has more The low threshold current density and wide gain spectrum characteristics can effectively improve the performance of interband cascaded lasers.

Description

technical field [0001] The present application relates to the field of semiconductor lasers, in particular to a quantum dot interband cascade laser. Background technique [0002] Mid-infrared semiconductor lasers in the 3-5μm band are widely used in communication, trace gas monitoring, electronic countermeasures and environmental monitoring and other fields. Interband cascade lasers (interband cascade lasers, ICLs) can meet the light source requirements in this band, which combines the advantages of ordinary quantum well lasers and quantum cascade lasers. At present, MBE is mostly used to grow interband cascaded laser chips, and its main structure is divided into waveguide region, cascade structure region and optical waveguide confinement region. Although great progress has been made in the research of interband cascaded lasers, the performance of laser devices is severely limited due to its high threshold current density, which restricts its application in related fields. ...

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Problems solved by technology

[0004] The present invention proposes an antimonide quantum dot interband cascade laser structure. By designing the two-dimensional quantum well layer in the interband cascade laser active region structure as a three-dimensional quantum dot layer, the interband cascade laser has more Low threshold current density and wide gain spectrum characteristics effectively solve the problem of high threshold current density of interband cascaded lasers and improve the performance of laser devices

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