A single-mode silicon-based hybrid laser light source with silicon waveguide output

Abstract

The invention discloses a single-mode silicon-based hybrid laser light source output by a silicon waveguide. The laser light source includes a stacked tapered (Taper) gain structure and an SOI ridge waveguide structure, wherein the tapered gain structure is passed through reflow soldering technology. flip-chip bonding on the SOI ridge waveguide structure. The invention improves the confinement factor of the active region by introducing the III-V family Taper structure and growing the optical lower confinement layer in the periodic microgroove hybrid laser, thereby increasing the mode gain in the III-V family; at the same time, the introduction of the Taper structure The efficient coupling between the III‑V group structure and the silicon waveguide is guaranteed, and the single longitudinal mode laser is output from the silicon waveguide. The invention has low manufacturing cost, can be used for silicon-based optical interconnection, and laser light source in optical communication, improves the coupling efficiency of III-V light source and silicon waveguide, and realizes an efficient coupling single-mode hybrid silicon-based semiconductor laser light source.

Description

technical field [0001] The invention relates to a laser light source in the field of silicon-based platform optoelectronic integration, in particular to a single-mode silicon-based hybrid laser light source output by a silicon waveguide in silicon-based hybrid integration. Background technique [0002] With the development of optical communication technology and microelectronics technology, people require faster and faster computing speed of computers and smaller and smaller device sizes. However, the interconnection delay effect and energy consumption of integrated circuits based on electrical interconnection limit the further development of microelectronics technology. Compared with traditional electrical interconnection technology, optical interconnection technology using optical waves as information carriers , has the advantages of no signal interference, fast response, low power consumption, and large bandwidth. Therefore, one of the current research hotspots is to rea...

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Problems solved by technology

However, the reduction of the confinement factor will reduce the modal gain of the laser, which will lead to an increase in the threshold current density; and if the silicon waveguide on SOI is too thick (higher than 400nm), it will cause the laser to output multiple transverse modes, which is not conducive to CMOS. Integration of lasers with other single-mode devices (such as amplifiers, modulators, etc.) on a compatible silicon-based platform

These factors limit the development of single-mode silicon-based hybrid semiconductor lasers

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