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Method for mixing organic gallium source selective zone growing indium-gallium-arsenic-phosphor multiple quantum well

A technology of multiple quantum wells and indium gallium arsenide phosphide, applied in the field of optimized selective growth technology

Inactive Publication Date: 2003-06-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

In addition, the article published by Bellcore Corporation of the United States on pages 364 to 370 of Volume 132 of the Journal of Crystal Growth in 1993 mentioned the use of the first method and the second method to grow bulk materials, but did not involve limiting the growth of multiple quantum well materials.

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  • Method for mixing organic gallium source selective zone growing indium-gallium-arsenic-phosphor multiple quantum well
  • Method for mixing organic gallium source selective zone growing indium-gallium-arsenic-phosphor multiple quantum well

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[0018] In order to make an electroabsorption modulated laser, the energy bandgap difference between the selected region and the non-selected region material is required to be greater than 30meV, which can be achieved in two ways: increasing the thickness of the quantum well in the selective growth region or increasing the strain of the quantum well in the selective growth region. When TMGa and TMIn are used to grow quantum wells, because the cracking temperature of TMGa is lower than that of TMIn, more indium diffuses to the selective growth region through gas phase diffusion, so the strain of the well in the selective growth region increases, and the thickness also increases to a certain extent. The energy bandgap difference of materials inside and outside the growth region can meet the requirements, but the strain of the barrier also increases at the same time, so that the material can easily reach the critical thickness and generate dislocations, thereby reducing the luminous...

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Abstract

This invention relates to a method for generating In Ga As P multiquantum-well in mixed organic GA source selection zone in whith, when selecting to generate In GaAsP multiquantum-well, triethyl Ga and trimethyl In generation limitation layer and base and their generation well are applied; the quantum-well material applying this method has large strain for the well zone in selection generation zone, yet small strain in nonselection generation zone; the strain variation is small of the base and limitation layer in the two generation zones which makes the selected generation zone quantum-well have higher luminous effect, guaranteeing realization of high performance electric absorbing modulating DFB laser.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an optimized selective area growth technology, which can simultaneously grow high-quality indium gallium arsenide phosphide (InGaAsP) multiple quantum well materials inside and outside the selected area. Background technique [0002] Indium phosphide (InP)-based strained InGaAsP multiple quantum well material is the most important material used in the light source of high-speed, large-capacity, and long-distance optical fiber communication systems. With the development of optical fiber dense wavelength division multiplexing technology, high-speed, low-chirp electro-absorption modulation distributed feedback lasers have become the preferred light source for dense wavelength division multiplexing technology; and InGaAsP multiple quantum well materials based on selective area growth have become the first choice for fabricating electro-absorption modulation The main material o...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/30H01S5/343
Inventor 刘国利王圩朱洪亮
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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