A kind of epitaxial growth method and the epitaxial layer of buried heterostructure

An epitaxial growth and buried layer technology, applied in laser parts, semiconductor lasers, electrical components, etc., can solve problems such as threshold current and low optical power, reduce threshold current density, reduce Auger recombination, and improve high temperature characteristics. Effect

Active Publication Date: 2019-04-23
WUHAN HUAGONG GENUINE OPTICS TECH
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Problems solved by technology

Because BH (buried heterostructure) technology can more effectively confine the carriers in the epitaxial layer, it can make the threshold current of the laser lower and the optical power higher. However, AlGaInAs is easily oxidized, which limits its application in BH. At present, All related major companies are researching the BH technology of AlGaInAs

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  • A kind of epitaxial growth method and the epitaxial layer of buried heterostructure
  • A kind of epitaxial growth method and the epitaxial layer of buried heterostructure
  • A kind of epitaxial growth method and the epitaxial layer of buried heterostructure

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Embodiment Construction

[0024] An epitaxial growth method and an epitaxial layer for burying a heterostructure according to the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0025] The following is a best example of an epitaxial growth method and an epitaxial layer buried in a heterostructure described in the present invention, which does not limit the protection scope of the present invention.

[0026] figure 1 An epitaxial growth method is shown, comprising the following steps:

[0027] S1, growing part or all of the n / p / n / p InP or InGaAsP layer;

[0028] S2, the shape model of epitaxial growth required by burial, dry or wet etching;

[0029] S3. Growing all Al-containing materials in the epitaxial structure in the shape model.

[0030] Preferably, the step S1 specifically includes growing a Buffer layer, a first p-InP layer, and an n-InP layer sequentially on an InP substrate; the Buffer layer is an n-type InP buffer layer.

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Abstract

The invention relates to an epitaxial growth method and an epitaxial layer for burying a heterostructure, comprising the following steps: S1, growing part or all of an n / p / n / p InP or InGaAsP layer; S2, by burying, dry method or wet method Etch the shape model of the epitaxial growth required; S3, grow all Al-containing materials in the epitaxial structure in the shape model. In the present invention, part or all of the n / p / n / p structure is formed first, and then the shape of the epitaxial layer to be grown is etched, and then the epitaxial layer is grown therein. The method of the invention can effectively combine the advantages of AlGaInAs / InP material and BH technology to grow a high-efficiency laser epitaxial structure, so as to avoid Al oxidation, reduce Auger recombination, inter-band absorption, and improve the high temperature characteristics of the device. The threshold current density of the laser is reduced, the characteristic temperature of the active layer material and the external quantum efficiency, internal quantum efficiency and conversion efficiency of the quantum well in the active region are improved.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to an epitaxial growth method and an epitaxial layer for burying heterostructures. Background technique [0002] The semiconductor laser has developed from the initial operation at low temperature of 25°C to continuous operation at room temperature, and now it has developed to continuous operation at high temperature of 85°C. The active region of the semiconductor laser has developed from a homojunction to a single heterojunction, a double heterojunction, and a quantum well. (Single, multiple quantum wells) and other forms, in the final analysis, improve the external quantum efficiency, internal quantum efficiency and conversion efficiency of the semiconductor active layer material. [0003] In the prior art, the conduction band offset ΔEc=0.72ΔEg in the quantum well structure of AlGaInAs / InP material has a larger electron confinement potential than InGaAsP / InP (ΔEc=0.4ΔEg), whic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/323H01L21/02
CPCH01L21/02365H01L21/02538H01L21/02543H01L21/02546H01S5/323
Inventor 李鸿建
Owner WUHAN HUAGONG GENUINE OPTICS TECH
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