Semiconductor laser light source for emitting nanometer dimension vertical to cavity surface and method for making

Abstract

The invention provides a method which manufactures a vertical-cavity surface-emitting nano-scale semiconductor laser source with surface plasma modulation effect. The method is prepared on the base of normal vertical cavity surface emitting laser. The detailed process comprises that an antireflection coating layer is grown on the output cavity surface of the normal vertical cavity surface emitting laser; a sub-wavelength periodic structure is prepared on the antireflection coating of the cavity surface in the range of an output optical hole by a method of focused ion beam etching; a layer of metal film is plated after an insulation layer on a P-surface electrode is removed; after that, a hole with sub-wavelength dimension and a sub-wavelength periodic structure are prepared on the metal film of the output optical cavity surface by the method of focused ion beam etching; the light is restricted in a low-loss micro-resonant cavity and emitted through a slight opening to generate a near field light with high efficiency and high directivity.

Description

technical field [0001] The invention relates to a vertical cavity surface emitting nanoscale semiconductor laser light source, in particular to a vertical cavity surface emitting nanoscale semiconductor laser light source with surface plasma modulation effect. [0002] The present invention also relates to the preparation method of the above-mentioned laser light source Background technique [0003] Current optical data storage systems, such as CD or DVD, are far-field storage systems, and their storage density is limited due to the limitation of diffraction limit. Utilizing the evanescent wave in the near-field of the light source can break through the limitation of the diffraction limit and greatly increase the storage density. Therefore, high-density optical data storage has become a large field of near-field optical applications. If a tiny light source that breaks through the diffraction resolution limit can be manufactured, it will be a great impetus to the application...

AI Technical Summary

Problems solved by technology

[0005] However, ordinary VASL lasers can only obtain a super-diffraction-resolved spot size better than 1 / 2 wavelength within a distance of 100 nanometers in the near field, and the measurement and control of the 100-nanometer distance is difficult to achieve in optical memory applications. Devices with near-field high resolution or high storage density are too complex

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