33 results about "Optical memory" patented technology

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

A computing system may be provided. The computing system may include an optical memory cavity configured to store signal pulses representing a current combination for a combinatorial optimization computation. The computing system may further include an optical processing cavity. The optical processing cavity may be configured to receive the signal pulses from the optical memory cavity, perform an all-optical 1-bit delay computation on the signal pulses to generate a feedback pulse for at least one signal pulse, and provide the feedback pulse to be coupled back to the optical memory cavity.

An optical processor and a method for optically processing data are described herein. The optical processor may comprise an optical pulse generator, an optical memory, and optical logic. The optical pulse generator may be configured to generate an optical interrogation pulse. The optical memory may comprise one or more memory cells. Each memory cell may comprise a phase-change material. The optical memory may be configured to direct the optical interrogation pulse at memory cells thereby generating optical readout pulses. Each optical readout pulse may correspond to a state of the phase-change material in the memory cells thereby encoding data stored in the memory cells. Each optical readout pulse may be directed to the optical logic. The optical logic may be configured to perform at least one logical operation on the data based on the readout pulses.

A system includes: an optical switch module comprising a plurality of high bandwidth optical memory (HBOM) modules optically connected to a photonic integrated circuit comprising an optical switch configured to transmit optical signals between the HBOM modules and a plurality of ports; a plurality of processors each optically connected to at least one port of the optical switch module through a respective fiber connection; and a control module programmed to control data routing between the plurality of processors via the optical switch module, wherein the data routing comprises buffering data routed from a first processor of the plurality of processors to a second processor of the plurality of processors on one or more of the HBOM modules.

The invention provides an optical waveguide and heterojunction two-dimensional material integrated nonvolatile storage structure and an application method, and relates to the technical field of photoelectron integration. A heterojunction two-dimensional material layer is arranged in an evanescent field area of an optical waveguide layer, so that when an electric field pulse is applied to the heterojunction two-dimensional material layer through a positive electrode layer and a negative electrode layer, the heterojunction two-dimensional material layer is not subjected to evanescent field pulse; the heterojunction two-dimensional material layer can generate various non-volatile heterojunction polarization states, so that the optical constant and the optical state of the non-volatile storage structure are changed, the optical state can be stored by utilizing the non-volatility, and the optical memory function is realized. Even under the condition of power failure, the stored optical state cannot be lost, and ultra-low static power consumption can be realized. The overturning of the polarization state of the heterojunction is realized by the overturning of the heterojunction domain, so that the power consumption of the nonvolatile storage structure is far lower than the heat power consumption required by a phase change memory or a thermo-optic device.

The present invention provides an optical memory device-based optical data preprocessor and a method thereof, which improves data processing speed and reduces data bottlenecks by storing input optical signals in an overlapped manner and then outputting them as electrical signals for data processing.

The invention belongs to the technical field of optical imaging, and discloses a non-intrusive imaging method and device penetrating through a dynamic scattering medium, and the method comprises the steps: controlling a preset coherent object light beam to irradiate an object to be imaged, and forming an object light field; collecting a speckle intensity image of a speckle field formed by an object light field penetrating through the preset dynamic scattering medium in a far-field region, wherein the far-field region is a region of the preset dynamic scattering medium penetrated by the object light field; based on a four-moment correlation function of the speckle intensity image, analyzing to obtain a far-field mutual dry function; according to a function relationship between the far-field mutual coherence function and the object light field autocorrelation function, analyzing to obtain an autocorrelation function of the object to be imaged; and based on a phase recovery algorithm, reconstructing an image of the to-be-imaged object through the autocorrelation function. According to the invention, view field limitation caused by dependence on an optical memory effect is avoided, imaging can be completed through single exposure, a data acquisition process is simplified, and adaptability to a dynamic scattering medium and imaging efficiency are improved.

Systems and methods are provided for non-volatile optical storage devices that leverage photon avalanche-induced carrier trapping in semiconductor materials. Examples herein include a crystalline semiconductor layer disposed on a substrate and an amorphous layer disposed on the crystalline semiconductor layer. The crystalline semiconductor layer comprises an optical waveguide and a PN junction formed in the optical waveguide. An optical source is configured to emit light of a wavelength into the optical waveguide and a power source is configured to supply a first voltage bias across the PN junction that causes an amplitude of optical power of light emitted from the optical waveguide to change from a first amplitude to a second amplitude. The optical waveguide emits light at the second amplitude while the first voltage bias is supplied and after the first voltage bias is removed.

The invention belongs to the technical field of phosphorescent materials and information encryption materials, and discloses a light activation time dependent afterglow carbon dot polymer film and a preparation method and application thereof.The preparation method comprises the following steps that o-phenylenediamine serves as a carbon source precursor, isopropanol serves as a solvent, a reaction is conducted for 6-8 h at the temperature of 180-250 DEG C under the closed high-pressure condition, and a CDs solution is obtained; and adding the CDs solution into the ABS resin, uniformly mixing to prepare a polymer film, and curing to obtain the ABS / CDs composite film. The obtained polymer film shows double light activated delayed luminescence, emission is generated at 521 nm and 652 nm respectively, the reversible afterglow discoloration process from red to orange to yellow to green is achieved, and the optical memory effect as long as 40 minutes is shown under the environmental condition. The method is a first carbon dot-based system which realizes a photo-activated TEAC behavior and has a reversible optical memory characteristic. Compared with inorganic and organic materials, the carbon dot polymer film has the advantages of simplicity, convenience, rapidness, no metal, long service life, economy, effectiveness, low toxicity and the like.

The present application belongs to the field of optical scattering imaging technology, and realizes the imaging through scattering medium based on optical memory effect.When the imaging target exceeds the memory effect range, the imaging failure is usually caused, thereby limiting the imaging field of view.The present application proposes a method and device for realizing non-invasive large field of view imaging through scattering medium based on PSF estimation and correlation operation.When the target is too large to exceed the memory effect range, the phase recovery algorithm is used to reconstruct the image of the sub-target O i of the target O hidden in the scattering medium, the positions of all sub-targets are obtained based on the point spread function estimation and autocorrelation and cross-correlation operation, the image of the sub-targets is spliced according to the positions, and the non-invasive large field of view imaging is realized.The present application can also realize non-invasive large field of view super-resolution imaging beyond the memory effect range, and can simultaneously consider the imaging field of view and imaging resolution.The present application has wide application in the fields of biomedical imaging and optical microscopic imaging.

The invention provides a method for tracking and imaging a large-size moving target through a strong scattering medium. The device is characterized in that a continuous laser beam with a single central wavelength is used for irradiating a to-be-measured target mounted on a linear displacement platform after being subjected to beam expansion collimation and spatial filtering. Through a telescope system, a series of speckle images of a large-size moving target are obtained by using a high-sensitivity sCMOS camera through a strong scattering medium. A speckle image cross-correlation algorithm is used to realize accurate positioning and tracking of a moving target. And reconstructing a high spatial resolution image of the moving target by using an autocorrelation algorithm of the speckle image and an improved Gerchberg-Saxton iterative phase recovery algorithm. The constructed system and method effectively break through the limitation of the angular spectrum range of the optical memory effect during imaging through a strong scattering medium, have the characteristics of simple system structure, low cost, convenience in use and the like, and can be widely applied to the research fields of biology, medicine, environmental monitoring, industrial nondestructive testing, space remote sensing and the like.

A two-dimensional semiconductor ferroelectric gate transistor structure photodetector based on oxygen plasma treatment belongs to the field of photoelectric detection technology. Using silicon / silicon dioxide as a substrate, the two-dimensional ferroelectric semiconductor material α-In₂Se₃ is placed on the silicon dioxide. An interfacial insulating dielectric layer is formed on the surface of the α-In₂Se₃ material after oxygen plasma treatment. A two-dimensional transition metal chalcogenide is prepared on the insulating dielectric layer using a mechanical exfoliation method. Metal electrodes are bonded to the two-dimensional ferroelectric semiconductor material and the two-dimensional transition metal chalcogenide through electrode adhesion layers. Under the action of the two-dimensional ferroelectric gate, the device exhibits photoelectric detection performance with low dark current and high responsivity. The device also has a certain optical memory function, making it suitable for multifunctional devices integrating detection and memory. The gate dielectric layer preparation method of this invention is simple, suitable for large-scale preparation, and low in cost. It can be applied to the fields of photoelectric detection technology and artificial vision bionics.

A kind of pixel orientation-based multilayer liquid crystal optical storage stack structure and its information writing and reading method, pixelated liquid crystal orientation area can be designed and prepared according to reading light, information pattern, and according to the principle of reverse design, the transparent liquid crystal optical memory is formed by stacking multiple orientation layers, and the information pattern is read by polarizing plate and microscope cooperation.The present application uses the polarization information of light to store information, and the energy loss of reading light in transmission stage is small for visible light, infrared and other wavebands.The number of stacked layers is much larger than that of traditional optical storage technology, and the space utilization is improved by orders of magnitude.The material has higher high-temperature resistance, acid and alkali resistance and other properties than ordinary optical storage optical disc, which is beneficial to long-term use.

The present application relates to a kind of real-time wide field of view color imaging method and system using scattered light.The method: different visible light band coherent laser is uniformly mixed to obtain multi-wavelength mixed parallel light;Scattered light formed after mixed parallel light passes through scattering medium is simultaneously carried out RGB three channels individual feedback type wavefront shaping, complete the pre-correction of mixed parallel light after scattering medium;The sample to be imaged is placed between mixed parallel light output and scattering medium, according to the imaging field of view range adjustment sample to be imaged position, obtain the sample image of RGB three channels and carry out fusion to obtain the color image of sample to be imaged, realize the real-time wide field of view color imaging of scattered light.The present application only needs to correct scattered light in advance, realizes the imaging of any transparent sample in the imaging range under the condition that scattering medium does not change or slightly changes, has real-time;While introducing optical memory effect, imaging field of view is no longer limited to optical axis, can realize wide field of view imaging.

The invention provides an anti-scattering imaging method and system based on a light diffraction neural network, and the method comprises the steps: S1, constructing a simulation data set for training the light diffraction neural network, and enabling the simulation data set to comprise an object data set and a scattering medium data set; s2, an optical system is built, a propagation model based on the light diffraction neural network is built according to the optical system, and the light diffraction neural network is trained based on the simulation data set; s3, implanting the trained diffraction neural network into a diffraction neural network module in the optical system; s4, operating the optical system, and obtaining an image of the recovered object in real time; the optical system is an anti-scattering imaging system based on an optical diffraction neural network. According to the anti-scattering imaging framework based on the optical diffraction neural network, objects hidden in static and dynamic scattering media can be reconstructed in real time, and an imaging view field is not limited by an optical memory effect interval. The method is suitable for coherent illumination and coherent illumination.

This invention discloses a fibrous optoelectronic sensing and memory integrated device and its fabrication method. The device includes a first electrode unit and a second electrode unit spirally wound together. The first electrode unit includes a flexible carbon nanotube fiber electrode and n-type TiO₂ uniformly distributed on its surface. 2‑x Nanowire array; the second electrode unit includes a flexible carbon nanotube fiber electrode and a p-type MoS2 nanosheet array uniformly distributed on its surface, wherein the n-type TiO2... 2‑x The nanowire array and the p-type MoS2 nanosheet array are in close contact and can form a heterojunction interface. The device of the present invention can effectively simulate the electrical synaptic plasticity functions, such as pulse facilitation, long and short duration plasticity, and the "learning-memory-consolidation" behavior of optical signals; and also has excellent flexibility and optical memory function that is not affected by the incident light angle, and can be freely woven into fabrics to realize a wearable visual perception and memory integrated fabric system.

Systems and methods that include an optical memory module and cache manager for an optical memory module are disclosed. In an example, a memory module includes a photonic integrated circuit (PIC), an electric integrated circuit (EIC) stacked on the PIC and having a first memory interface and a second memory interface, photonic transceivers optically coupled to the PIC and electrically coupled to the EIC, first memory electrically coupled to the first memory interface of the EIC, second memory electrically coupled to the second memory interface of the EIC, the EIC including a cache manager between the first memory interface and the second memory interface, and a memory controller between the first memory and the photonic transceivers, and the PIC, EIC, photonic transceivers, first memory, and second memory are co-packaged.

The invention discloses an electrochromic indicator sheet for optimizing viologen optical memory effect based on viscous liquid metal, and belongs to the technical field of functional materials and electrochromism. The electrochromic indicating sheet comprises lower-layer conductive glass, a multifunctional viscous liquid metal layer, a viologen integrated electrochromic electrolyte layer and upper-layer conductive glass which are sequentially arranged from bottom to top. According to the invention, a plasticine-like liquid metal conductive material capable of being coated is introduced, real-time electric leakage indication is realized through viologen discoloration, historical state recording is realized through irreversible consumption of liquid metal, viologen discoloration and consumption of the liquid metal form a dual visual feedback mechanism, the probability of occurrence and observation of an electric leakage phenomenon can be increased, and the reliability of electric leakage detection is improved. Meanwhile, the situation that the initial electric leakage phenomenon is not observed, the viologen self-oxidation indicating color disappears after a period of time, and electric leakage is mistakenly deemed not to occur is avoided. MuA-level micro leakage current can be detected, the response speed reaches a second level, and early insulation degradation and transient pulse leakage risks are accurately captured.

Consistent with some disclosed embodiments, an optical switch includes: a scheduler; and a buffer for buffering an optical packet including, arranged in a circuit, a clock generator for generating a clock signal, an optical unbalanced Mach Zehnder Interferometer (MZI) and a fiber delay line (FDL) having an FDL length, wherein the optical packet has an optical packet signal, wherein the scheduler is configured to insert the optical packet into the buffer and to determine a number of circulations of the optical packet through the circuit, wherein the MZI modulates the clock signal based on the optical packet signal to create a reshaped optical packet after each circulation of the optical packet through the circuit, and wherein the FDL introduces a delay in the optical packet proportional to the FDL length.

The application relates to a two-dimensional perovskite semi-floating gate type all-optical control memory, which is mainly used for efficient storage and information processing. The memory comprises a substrate as the lowermost layer; two-dimensional perovskite nanosheets are selected as a photosensitive floating gate layer and are arranged on the upper surface of the substrate; a dielectric layer is arranged on the photosensitive floating gate layer and serves as a charge protection layer; a material with semiconductor properties is selected and arranged on the upper surface of the second dielectric layer and the photosensitive floating gate layer and serves as a channel layer; electrodes are arranged at both ends of the channel layer. Through efficient light absorption and carrier separation characteristics of the two-dimensional perovskite material and in combination with a photo-generated charge capture mechanism of the semi-floating gate structure, data writing, erasing and reading can be completed only by relying on optical signals, and energy consumption is reduced; meanwhile, the thin film characteristics of the two-dimensional perovskite make it easy to be integrated with flexible electronics and optoelectronics, and provide the possibility for high-density and multifunctional memory devices.

The invention belongs to the technical field of photoelectric functional materials, and relates to a photoelectric response type organic-inorganic hybrid complex, and the molecular formula of the complex is C40H27InN5O16. According to the compound, photoactive 1, 1 '-bis (4-carboxyl phenyl)-4, 4'-dipyridyl is used as a main ligand, electron-rich terephthalic acid is used as an auxiliary ligand, and the main ligand and In (NO3) 3 are coordinated under the solvothermal condition to form a three-dimensional frame structure. Compared with reported similar compounds, the complex has a sensitive photochromic / electrochromic behavior, changes from orange red to green within 4 seconds after ultraviolet irradiation, and can recover to the initial color after 1 hour after color change. In addition, the compound also shows excellent electrochromism and ammonia gas recognition behaviors with naked eyes. Due to the characteristics, the compound has wide application prospects in the fields of inkless printing, electrochromic devices, photochromic decoration, optical memories, optical switches, photoelectric display, volatile amine detection and the like.

The invention discloses a wafer detection method and device, and relates to the technical field of wafer detection. The method comprises the steps of detecting whether an illumination light spot emitted to a movable workpiece table by an illumination system meets a preset optical constraint condition or not before wafer detection operation is executed by utilizing the illumination system; under the condition that the illumination light spot meets a preset optical constraint condition, wafer detection is carried out on the to-be-detected wafer, and a detection image containing speckle interference is obtained; based on an optical memory effect, carrying out self-correlation processing and Fourier transform on a detection image containing speckle interference, and extracting frequency domain information of the detection image; and processing the frequency domain information by using a phase recovery algorithm to obtain a wafer structure image of the to-be-detected wafer. According to the scheme, a real wafer structure image is reversely deduced from an actual image containing speckle interference, and the limitation that a front speckle elimination mode mainly depends on light source transformation or external modulation is broken through.

Multidrop optical connections are used for an optical memory module. Multiple buffer integrated circuits on a module each receive information from the host system using different wavelengths of light transmitted on the same waveguide. Multiple buffer integrated circuits each transmit information back to the CPU using different wavelengths of light transmitted on another waveguide. Wavelength resonant ring couplers disposed on the buffer integrated circuits are used to separate the wavelength being received by a particular buffer integrated circuit from the wavelengths of light destined for other buffer integrated circuits on the same waveguide. Wavelength resonant ring modulators also disposed on the buffer integrated circuits modulate specific wavelengths of light unique to each buffer integrated circuit to transmit information to the CPU.

The application provides a storage unit, an optical memory and a preparation method, and a storage method of an optical signal, and relates to the technical field of information materials and devices. The storage unit comprises at least one transistor. The transistor comprises a substrate, a first gate, a first channel part, a first electrode and a second electrode, and a passivation layer. The material of the first channel part comprises amorphous oxide. The passivation layer has a first opening, and the first opening exposes at least part of the first channel part. According to the scheme, the amorphous oxide is used as the material of the first channel part of the transistor, and the first channel part can directly receive light signal irradiation. By using the light response characteristics of the amorphous oxide, the light signal can be directly mapped to the electrical state of the storage unit without additional photoelectric conversion circuit, the writing and keeping of the optical information are realized, the optical storage structure is simplified, and the power consumption and the delay are reduced.

Systems and methods are provided for non-volatile optical storage devices. The examples comprise a light emitting device that leverages an integrated charge-trap memory (CTM) device for non-volatile retention of wavelength tuning. In examples, a light emitting device is formed from a first semiconductor layer is formed on a second semiconductor layer having a dielectric layer therebetween. The light emitting device emits light into a waveguide comprising in the second semiconductor layer. A non-volatile memory device is integrated with the light emitting device in the waveguide. One or more power sources can be operated to apply a seed voltage to the first semiconductor layer that causes the light emitting device to emit light, and apply a voltage bias across the non-volatile memory device to tune the wavelength of the light. The tuning can be retrained after the voltage bias is removed.

The invention provides a ferroelectric-polyacid coupled long-memory composite electrochromic film as well as a preparation method and application thereof, and belongs to the technical field of electrochromic materials and devices. The thin film is composed of FTO conductive glass, a TiO2 porous framework layer, a P2W17V polyacid layer deposited in the framework and a P (VDF-TrFE) ferroelectric functional layer, and a built-in electric field generated by polarization of the ferroelectric layer is deeply coupled with a polyacid oxidation reduction process, so that charges are effectively locked, ion diffusion is inhibited, and the limitation of traditional physical lamination is broken. The optical memory time of the prepared film is prolonged from 489.8 s to 2357.2 s, the bistable performance is remarkably enhanced, and the technological process is simple.

The present invention provides a readable and writable optical memory based on a high-order topological structure, belonging to the field of all-optical communication technology. The present invention implements the read and write functions of the optical memory through the L-shaped boundary configuration of the PC. Because the angle configuration is connected to the boundary, the angle state can be transitioned to the boundary state by applying an external bias magnetic field. Ultimately, the angle state is used to store the optical signal, and the conversion from the angle state to the boundary state is used to extract or read the optical signal. Through the above design, a readable and writable optical memory is realized. The optical memory designed by the present invention can solve the problems of the short storage time and complex storage and reading processes of existing optical storage devices.

The invention belongs to the technical field of functional thin film materials, and particularly relates to an entropy stabilizing material with a high optical quality factor and a preparation method of the entropy stabilizing material. In order to solve the problem that in the prior art, a high-symmetry crystal system is difficult to form due to strong orbital hybridization of a material in a middle-infrared band, so that low refractive index contrast ratio and low extinction coefficient of a phase change material are difficult to consider at the same time, the invention provides a light element and heavy element synergistic high-entropy doping strategy, and light elements Si and Ge and a heavy element Te are jointly introduced into a Sb2Se3 system, so that the phase change material has high refractive index contrast ratio and low extinction coefficient. And the high-entropy phase change material Si < x > Ge < y > Sb < 1-x-y > Se < 1-y > Tez is successfully prepared. The material is converted into a high-symmetry cubic structure from a low-symmetry orthogonal structure under high configuration entropy driving, p-track alignment is achieved, the optical quality factor of the material is greatly improved compared with that of traditional Ge2Sb2Te5, the material bottleneck of near-infrared and middle-infrared band all-optical memory computing image processors is broken through, and the application prospect is wide. And a key material basis is provided for practical application of the system in an intelligent visual system.