58 results about "Optical memory" patented technology

The invention discloses a multi-mode reconfigurable diamond solar-blind ultraviolet photoelectric transistor and a preparation method thereof, and aims to solve the problem of separation of sensing, storage and calculation frameworks of an existing artificial vision system. According to the diamond solar blind ultraviolet photoelectric transistor, a terminal is arranged on the surface of a diamond substrate, a first metal film layer is deposited on the upper surface of the diamond substrate to serve as a first contact electrode, the first contact electrode is Schottky contact, and a second contact electrode is a metal probe. The second contact electrode is in needle point contact with the upper surface of the diamond substrate, a second metal film layer is deposited on the lower surface of the diamond substrate to serve as a third contact electrode, and the third contact electrode is Schottky contact. According to the reconfigurable diamond solar blind ultraviolet photoelectric transistor, different functions of an avalanche detector, an optical memory, visual synapse and the like are integrated in one device, and large gain rising of the diamond detector and multi-mode intelligent sensing of a single device are achieved.

The invention discloses a method for improving optical storage capacity based on ultraviolet femtosecond laser multi-cycle low-temperature direct writing, and belongs to the technical field of laser processing. Leveling the sample table; designing a random data structure and calculating parameters; preparing a random data structure; reading and characterizing a random data structure; according to the method, firstly, ultraviolet femtosecond laser with the wavelength of 343 nm is used for replacing infrared / visible band laser used in traditional five-dimensional optical storage, secondly, a multi-cycle scanning mode is used for replacing an existing scanning mode, and birefringence modification with the smaller size is induced in quartz glass at low temperature; the tiny birefringence modification is used for realizing data writing and reading of the optical memory with higher storage density; according to the multi-cycle scanning mode, heat accumulation in the machining process is affected by changing single-point one-way acting time, so that the dot spacing is shortened, and the storage capacity is increased.

The subject matter of this specification can be embodied in, among other things, a method that includes receiving, by a first memory switch of a first processor node, data from a first on-chip memory of the first processor node, wherein the first processor node comprises a first processor circuit, receiving, by a first photonic transceiver, the data from the first memory switch, transmitting, by the first photonic transceiver, the data over a photonic link, receiving, by a second photonic transceiver, the data from the photonic link, transmitting, by the second photonic transceiver, the data to a second memory switch of a second processor node comprising a second processor circuit, wherein the second photonic transceiver is in electrical communication with the second memory switch in parallel with the second processor circuit, and storing, by the second memory switch, the data in a second on-chip memory of the second processor node.

An optical memory module includes a substrate, a first memory controller on the substrate, and a plurality of first memory devices on the substrate. The first memory controller includes the first transceiver. The first transceiver receives a first optical input signal through a first optical interconnection or outputs a first optical output signal through the first optical interconnection. The first memory controller is optically connected to an optical logic module located outside the optical memory module through the first transceiver and the first optical interconnection. The plurality of first memory devices are controlled by the first memory controller and accessed by the optical logic module through the first memory controller, the first transceiver and the first optical interconnection.

A computing system may be provided. The computing system may include an optical memory cavity configured to store signal pulses representing a current combination for a combinatorial optimization computation. The computing system may further include an optical processing cavity. The optical processing cavity may be configured to receive the signal pulses from the optical memory cavity, perform an all-optical 1-bit delay computation on the signal pulses to generate a feedback pulse for at least one signal pulse, and provide the feedback pulse to be coupled back to the optical memory cavity.

The invention relates to an optical storage unit (1) for an optical computing unit (2), comprising a signal input (3), a signal output (4) and n connecting paths (5) arranged between the signal input (3) and the signal output (4), wherein the signal input (3) is designed to divide a useful signal into n pulses, a first pulse P n-1 is transmitted via a first connecting line (5A), a second pulse P n The transmission is carried out via a second connecting line (5B) that is different from the first connecting line (5A). the second connecting path (5B) has at least one property different from the first connecting path (5A), such that the second pulse P n relative to the first pulse P n-1 is delayed by the storage time Δt, and the signal output (4) is designed to transmit the pulses P n and P n-1to provide for further processing or the Pulse P n and P n-1 to combine into a single overall signal and to make the overall signal available for further processing. In this way, an optical storage unit is provided that can be integrated into a complete optical system, thus increasing the performance of the overall system.

An optical processor and a method for optically processing data are described herein. The optical processor may comprise an optical pulse generator, an optical memory, and optical logic. The optical pulse generator may be configured to generate an optical interrogation pulse. The optical memory may comprise one or more memory cells. Each memory cell may comprise a phase-change material. The optical memory may be configured to direct the optical interrogation pulse at memory cells thereby generating optical readout pulses. Each optical readout pulse may correspond to a state of the phase-change material in the memory cells thereby encoding data stored in the memory cells. Each optical readout pulse may be directed to the optical logic. The optical logic may be configured to perform at least one logical operation on the data based on the readout pulses.

A system includes: an optical switch module comprising a plurality of high bandwidth optical memory (HBOM) modules optically connected to a photonic integrated circuit comprising an optical switch configured to transmit optical signals between the HBOM modules and a plurality of ports; a plurality of processors each optically connected to at least one port of the optical switch module through a respective fiber connection; and a control module programmed to control data routing between the plurality of processors via the optical switch module, wherein the data routing comprises buffering data routed from a first processor of the plurality of processors to a second processor of the plurality of processors on one or more of the HBOM modules.

The invention provides an optical waveguide and heterojunction two-dimensional material integrated nonvolatile storage structure and an application method, and relates to the technical field of photoelectron integration. A heterojunction two-dimensional material layer is arranged in an evanescent field area of an optical waveguide layer, so that when an electric field pulse is applied to the heterojunction two-dimensional material layer through a positive electrode layer and a negative electrode layer, the heterojunction two-dimensional material layer is not subjected to evanescent field pulse; the heterojunction two-dimensional material layer can generate various non-volatile heterojunction polarization states, so that the optical constant and the optical state of the non-volatile storage structure are changed, the optical state can be stored by utilizing the non-volatility, and the optical memory function is realized. Even under the condition of power failure, the stored optical state cannot be lost, and ultra-low static power consumption can be realized. The overturning of the polarization state of the heterojunction is realized by the overturning of the heterojunction domain, so that the power consumption of the nonvolatile storage structure is far lower than the heat power consumption required by a phase change memory or a thermo-optic device.

The present invention provides an optical memory device-based optical data preprocessor and a method thereof, which improves data processing speed and reduces data bottlenecks by storing input optical signals in an overlapped manner and then outputting them as electrical signals for data processing.

The invention belongs to the technical field of optical imaging, and discloses a non-intrusive imaging method and device penetrating through a dynamic scattering medium, and the method comprises the steps: controlling a preset coherent object light beam to irradiate an object to be imaged, and forming an object light field; collecting a speckle intensity image of a speckle field formed by an object light field penetrating through the preset dynamic scattering medium in a far-field region, wherein the far-field region is a region of the preset dynamic scattering medium penetrated by the object light field; based on a four-moment correlation function of the speckle intensity image, analyzing to obtain a far-field mutual dry function; according to a function relationship between the far-field mutual coherence function and the object light field autocorrelation function, analyzing to obtain an autocorrelation function of the object to be imaged; and based on a phase recovery algorithm, reconstructing an image of the to-be-imaged object through the autocorrelation function. According to the invention, view field limitation caused by dependence on an optical memory effect is avoided, imaging can be completed through single exposure, a data acquisition process is simplified, and adaptability to a dynamic scattering medium and imaging efficiency are improved.

Systems and methods are provided for non-volatile optical storage devices that leverage photon avalanche-induced carrier trapping in semiconductor materials. Examples herein include a crystalline semiconductor layer disposed on a substrate and an amorphous layer disposed on the crystalline semiconductor layer. The crystalline semiconductor layer comprises an optical waveguide and a PN junction formed in the optical waveguide. An optical source is configured to emit light of a wavelength into the optical waveguide and a power source is configured to supply a first voltage bias across the PN junction that causes an amplitude of optical power of light emitted from the optical waveguide to change from a first amplitude to a second amplitude. The optical waveguide emits light at the second amplitude while the first voltage bias is supplied and after the first voltage bias is removed.

The invention belongs to the technical field of phosphorescent materials and information encryption materials, and discloses a light activation time dependent afterglow carbon dot polymer film and a preparation method and application thereof.The preparation method comprises the following steps that o-phenylenediamine serves as a carbon source precursor, isopropanol serves as a solvent, a reaction is conducted for 6-8 h at the temperature of 180-250 DEG C under the closed high-pressure condition, and a CDs solution is obtained; and adding the CDs solution into the ABS resin, uniformly mixing to prepare a polymer film, and curing to obtain the ABS / CDs composite film. The obtained polymer film shows double light activated delayed luminescence, emission is generated at 521 nm and 652 nm respectively, the reversible afterglow discoloration process from red to orange to yellow to green is achieved, and the optical memory effect as long as 40 minutes is shown under the environmental condition. The method is a first carbon dot-based system which realizes a photo-activated TEAC behavior and has a reversible optical memory characteristic. Compared with inorganic and organic materials, the carbon dot polymer film has the advantages of simplicity, convenience, rapidness, no metal, long service life, economy, effectiveness, low toxicity and the like.

The present application belongs to the field of optical scattering imaging technology, and realizes the imaging through scattering medium based on optical memory effect.When the imaging target exceeds the memory effect range, the imaging failure is usually caused, thereby limiting the imaging field of view.The present application proposes a method and device for realizing non-invasive large field of view imaging through scattering medium based on PSF estimation and correlation operation.When the target is too large to exceed the memory effect range, the phase recovery algorithm is used to reconstruct the image of the sub-target O i of the target O hidden in the scattering medium, the positions of all sub-targets are obtained based on the point spread function estimation and autocorrelation and cross-correlation operation, the image of the sub-targets is spliced according to the positions, and the non-invasive large field of view imaging is realized.The present application can also realize non-invasive large field of view super-resolution imaging beyond the memory effect range, and can simultaneously consider the imaging field of view and imaging resolution.The present application has wide application in the fields of biomedical imaging and optical microscopic imaging.

The invention provides a method for tracking and imaging a large-size moving target through a strong scattering medium. The device is characterized in that a continuous laser beam with a single central wavelength is used for irradiating a to-be-measured target mounted on a linear displacement platform after being subjected to beam expansion collimation and spatial filtering. Through a telescope system, a series of speckle images of a large-size moving target are obtained by using a high-sensitivity sCMOS camera through a strong scattering medium. A speckle image cross-correlation algorithm is used to realize accurate positioning and tracking of a moving target. And reconstructing a high spatial resolution image of the moving target by using an autocorrelation algorithm of the speckle image and an improved Gerchberg-Saxton iterative phase recovery algorithm. The constructed system and method effectively break through the limitation of the angular spectrum range of the optical memory effect during imaging through a strong scattering medium, have the characteristics of simple system structure, low cost, convenience in use and the like, and can be widely applied to the research fields of biology, medicine, environmental monitoring, industrial nondestructive testing, space remote sensing and the like.

A two-dimensional semiconductor ferroelectric gate transistor structure photodetector based on oxygen plasma treatment belongs to the field of photoelectric detection technology. Using silicon / silicon dioxide as a substrate, the two-dimensional ferroelectric semiconductor material α-In₂Se₃ is placed on the silicon dioxide. An interfacial insulating dielectric layer is formed on the surface of the α-In₂Se₃ material after oxygen plasma treatment. A two-dimensional transition metal chalcogenide is prepared on the insulating dielectric layer using a mechanical exfoliation method. Metal electrodes are bonded to the two-dimensional ferroelectric semiconductor material and the two-dimensional transition metal chalcogenide through electrode adhesion layers. Under the action of the two-dimensional ferroelectric gate, the device exhibits photoelectric detection performance with low dark current and high responsivity. The device also has a certain optical memory function, making it suitable for multifunctional devices integrating detection and memory. The gate dielectric layer preparation method of this invention is simple, suitable for large-scale preparation, and low in cost. It can be applied to the fields of photoelectric detection technology and artificial vision bionics.

A kind of pixel orientation-based multilayer liquid crystal optical storage stack structure and its information writing and reading method, pixelated liquid crystal orientation area can be designed and prepared according to reading light, information pattern, and according to the principle of reverse design, the transparent liquid crystal optical memory is formed by stacking multiple orientation layers, and the information pattern is read by polarizing plate and microscope cooperation.The present application uses the polarization information of light to store information, and the energy loss of reading light in transmission stage is small for visible light, infrared and other wavebands.The number of stacked layers is much larger than that of traditional optical storage technology, and the space utilization is improved by orders of magnitude.The material has higher high-temperature resistance, acid and alkali resistance and other properties than ordinary optical storage optical disc, which is beneficial to long-term use.

The present invention provides an optical storage device based on Rudin-Shapino photonic crystals, belonging to the field of all-optical communication technology. The optical storage device comprises a plurality of first dielectric layers, a plurality of second dielectric layers and two graphene monolayers, wherein the first dielectric layer is denoted as H, the second dielectric layer is denoted as L, and the graphene monolayer is denoted as G. The layered structure of the optical storage device is represented as: HHHLHHL1GL2HHL2GL1HHLHHH, wherein L1GL2 and L2GL1 both represent a three-layer structure formed by embedding a graphene monolayer in a second dielectric layer, the thickness of the first dielectric layer and the second dielectric layer are 1 / 4 of their respective optical wavelengths, and the first dielectric layer and the second dielectric layer are two uniform dielectric sheets with high and low refractive indices, respectively; the optical storage device based on Rudin-Shapino photonic crystals can realize a low-threshold optical bistable state, and the upper and lower thresholds of the bistable state correspond to the write and read decision thresholds of the optical storage device, respectively. The present invention has the advantages of being applicable to optical storage devices, etc.

The present application relates to a kind of real-time wide field of view color imaging method and system using scattered light.The method: different visible light band coherent laser is uniformly mixed to obtain multi-wavelength mixed parallel light;Scattered light formed after mixed parallel light passes through scattering medium is simultaneously carried out RGB three channels individual feedback type wavefront shaping, complete the pre-correction of mixed parallel light after scattering medium;The sample to be imaged is placed between mixed parallel light output and scattering medium, according to the imaging field of view range adjustment sample to be imaged position, obtain the sample image of RGB three channels and carry out fusion to obtain the color image of sample to be imaged, realize the real-time wide field of view color imaging of scattered light.The present application only needs to correct scattered light in advance, realizes the imaging of any transparent sample in the imaging range under the condition that scattering medium does not change or slightly changes, has real-time;While introducing optical memory effect, imaging field of view is no longer limited to optical axis, can realize wide field of view imaging.

A composite structure includes a dielectric layer, a two-dimensional graphene layer and a carbon quantum dot film. The dielectric layer is disposed on a first surface of a silicon substrate. The two-dimensional graphene layer is disposed on the dielectric layer. The carbon quantum dot film is disposed on the two-dimensional graphene layer.

The invention provides an anti-scattering imaging method and system based on a light diffraction neural network, and the method comprises the steps: S1, constructing a simulation data set for training the light diffraction neural network, and enabling the simulation data set to comprise an object data set and a scattering medium data set; s2, an optical system is built, a propagation model based on the light diffraction neural network is built according to the optical system, and the light diffraction neural network is trained based on the simulation data set; s3, implanting the trained diffraction neural network into a diffraction neural network module in the optical system; s4, operating the optical system, and obtaining an image of the recovered object in real time; the optical system is an anti-scattering imaging system based on an optical diffraction neural network. According to the anti-scattering imaging framework based on the optical diffraction neural network, objects hidden in static and dynamic scattering media can be reconstructed in real time, and an imaging view field is not limited by an optical memory effect interval. The method is suitable for coherent illumination and coherent illumination.

This invention discloses a fibrous optoelectronic sensing and memory integrated device and its fabrication method. The device includes a first electrode unit and a second electrode unit spirally wound together. The first electrode unit includes a flexible carbon nanotube fiber electrode and n-type TiO₂ uniformly distributed on its surface. 2‑x Nanowire array; the second electrode unit includes a flexible carbon nanotube fiber electrode and a p-type MoS2 nanosheet array uniformly distributed on its surface, wherein the n-type TiO2... 2‑x The nanowire array and the p-type MoS2 nanosheet array are in close contact and can form a heterojunction interface. The device of the present invention can effectively simulate the electrical synaptic plasticity functions, such as pulse facilitation, long and short duration plasticity, and the "learning-memory-consolidation" behavior of optical signals; and also has excellent flexibility and optical memory function that is not affected by the incident light angle, and can be freely woven into fabrics to realize a wearable visual perception and memory integrated fabric system.

Systems and methods that include an optical memory module and cache manager for an optical memory module are disclosed. In an example, a memory module includes a photonic integrated circuit (PIC), an electric integrated circuit (EIC) stacked on the PIC and having a first memory interface and a second memory interface, photonic transceivers optically coupled to the PIC and electrically coupled to the EIC, first memory electrically coupled to the first memory interface of the EIC, second memory electrically coupled to the second memory interface of the EIC, the EIC including a cache manager between the first memory interface and the second memory interface, and a memory controller between the first memory and the photonic transceivers, and the PIC, EIC, photonic transceivers, first memory, and second memory are co-packaged.

The invention discloses an electrochromic indicator sheet for optimizing viologen optical memory effect based on viscous liquid metal, and belongs to the technical field of functional materials and electrochromism. The electrochromic indicating sheet comprises lower-layer conductive glass, a multifunctional viscous liquid metal layer, a viologen integrated electrochromic electrolyte layer and upper-layer conductive glass which are sequentially arranged from bottom to top. According to the invention, a plasticine-like liquid metal conductive material capable of being coated is introduced, real-time electric leakage indication is realized through viologen discoloration, historical state recording is realized through irreversible consumption of liquid metal, viologen discoloration and consumption of the liquid metal form a dual visual feedback mechanism, the probability of occurrence and observation of an electric leakage phenomenon can be increased, and the reliability of electric leakage detection is improved. Meanwhile, the situation that the initial electric leakage phenomenon is not observed, the viologen self-oxidation indicating color disappears after a period of time, and electric leakage is mistakenly deemed not to occur is avoided. MuA-level micro leakage current can be detected, the response speed reaches a second level, and early insulation degradation and transient pulse leakage risks are accurately captured.

Consistent with some disclosed embodiments, an optical switch includes: a scheduler; and a buffer for buffering an optical packet including, arranged in a circuit, a clock generator for generating a clock signal, an optical unbalanced Mach Zehnder Interferometer (MZI) and a fiber delay line (FDL) having an FDL length, wherein the optical packet has an optical packet signal, wherein the scheduler is configured to insert the optical packet into the buffer and to determine a number of circulations of the optical packet through the circuit, wherein the MZI modulates the clock signal based on the optical packet signal to create a reshaped optical packet after each circulation of the optical packet through the circuit, and wherein the FDL introduces a delay in the optical packet proportional to the FDL length.

The application relates to a two-dimensional perovskite semi-floating gate type all-optical control memory, which is mainly used for efficient storage and information processing. The memory comprises a substrate as the lowermost layer; two-dimensional perovskite nanosheets are selected as a photosensitive floating gate layer and are arranged on the upper surface of the substrate; a dielectric layer is arranged on the photosensitive floating gate layer and serves as a charge protection layer; a material with semiconductor properties is selected and arranged on the upper surface of the second dielectric layer and the photosensitive floating gate layer and serves as a channel layer; electrodes are arranged at both ends of the channel layer. Through efficient light absorption and carrier separation characteristics of the two-dimensional perovskite material and in combination with a photo-generated charge capture mechanism of the semi-floating gate structure, data writing, erasing and reading can be completed only by relying on optical signals, and energy consumption is reduced; meanwhile, the thin film characteristics of the two-dimensional perovskite make it easy to be integrated with flexible electronics and optoelectronics, and provide the possibility for high-density and multifunctional memory devices.

According to some embodiments of the present disclosure, optical computing systems are disclosed that employ optical sources, such as optical frequency combs, and optical memories to perform computations such as Matrix-Vector Multiplication (MVM) operations or Matrix-Matrix Multiplication (MMM) operations. According to some embodiments of the present disclosure, optical computing systems are disclosed that employ optical sources, such as optical frequency combs, optical memories, and components configured to perform hyperspectral operations to increase throughput.

The invention belongs to the technical field of photoelectric functional materials, and relates to a photoelectric response type organic-inorganic hybrid complex, and the molecular formula of the complex is C40H27InN5O16. According to the compound, photoactive 1, 1 '-bis (4-carboxyl phenyl)-4, 4'-dipyridyl is used as a main ligand, electron-rich terephthalic acid is used as an auxiliary ligand, and the main ligand and In (NO3) 3 are coordinated under the solvothermal condition to form a three-dimensional frame structure. Compared with reported similar compounds, the complex has a sensitive photochromic / electrochromic behavior, changes from orange red to green within 4 seconds after ultraviolet irradiation, and can recover to the initial color after 1 hour after color change. In addition, the compound also shows excellent electrochromism and ammonia gas recognition behaviors with naked eyes. Due to the characteristics, the compound has wide application prospects in the fields of inkless printing, electrochromic devices, photochromic decoration, optical memories, optical switches, photoelectric display, volatile amine detection and the like.