1314 results about "Short axis" patented technology

It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

A seismic source includes a flextensional shell defining a longer axis and a shorter axis and at least one driver coupled to the flextensional shell proximate an end of the shorter axis. The seismic source may be a component of a marine seismic survey system. The marine seismic survey system may be utilized in a method of marine seismic surveying.

A high energy, high repetition rate workpiece surface heating method and apparatus are disclosed which may comprise a pulsed XeF laser operating at or above 4000 Hz and producing a laser output light pulse beam at a center wavelength of about 351 nm; an optical system narrowing the laser output light pulse beam to less than 20 μm in a short axis of the laser output light pulse beam and expanding the laser output light pulse beam to form in a long axis of the beam a workpiece covering extent of the long axis; the optical system including a field stop intermediate the laser and the workpiece; the workpiece comprising a layer to be heated; wherein the optical system focuses the laser output light pulse beam at a field stop with a magnification sufficient to maintain an intensity profile that has sufficiently steep sidewalls to allow the field stop to maintain a sufficiently steep beam profile at the workpiece without blocking the beam profile at too high an intensity level. 2. The apparatus may also have a high average power in the laser output light pulse beam as delivered to the workpiece and a a line bow correction mechanism in a short axis optical assembly. The line bow correction mechanism may comprise a plurality of weak cross cylinders. The system may comprise a catadioptric projection system. The linewidth due to laser diffraction and divergence may be less than geometric limitations. The system may project adjacent peaks of the nominal XeF spectrum to improve overall depth of focus through the separate center wavelengths of each respective adjacent peak having a different focal plane at the workpiece. The system may comprise a line bow is correction mechanism within a field stop optical assembly correcting line bow at the field stop plane and within a workpiece projection optical assembly correcting line bow at the workpiece plane.

Disclosed is a new propeller EPI pulse sequence with reduced sensitivity to field inhomogeneities is proposed. Image artifacts such as blurring due to Nyquist ghosting and susceptibility gradients are investigated and compared with those obtained in previous propeller EPI studies. The proposed propeller EPI sequence uses a readout that is played out along the short axis of the propeller blade, orthogonal to the readout used in previous propeller methods. In contrast to long-axis readout propeller EPI, this causes the echo spacing between two consecutive phase-encoding (PE) lines to decrease, which in turn increases the k-space velocity in this direction and hence the pseudo-bandwidth.