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Sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser and preparation method thereof

A vertical cavity surface emission, laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of limited application, large volume, complexity and so on

Inactive Publication Date: 2012-08-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

Radially polarized light generation methods are mainly based on solid-state lasers and fiber lasers. These methods require complex and large optical device circuits, which greatly limits its application.

Method used

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  • Sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser and preparation method thereof
  • Sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser and preparation method thereof
  • Sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser and preparation method thereof

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Embodiment Construction

[0020] see figure 2 , the present invention provides a sub-wavelength self-focusing radially polarized vertical cavity surface emitting laser, comprising:

[0021] A vertical cavity surface-emitting laser 2, one side of which is made with a P-surface electrode 3, the middle of the annular part of the P-surface electrode 3 is a light-emitting surface 31, and the size of the electrode should be designed according to the oxidation aperture of the laser to ensure uniform current injection;

[0022] An N-surface electrode 1, the N-surface electrode 1 is fabricated on the other surface of the VCSEL 2;

[0023] A dielectric film 4, which is made on the light-emitting surface 31 of the P-face electrode 3, the material of the dielectric film 4 is SiO 2 、SiN x 、Al 2 o 3 、TiO 2 or ZrO 2 , the thickness is 1 / 4 of the laser wavelength, and the thickness of the grown dielectric film 4 can modulate the phase of the transmission electric field and enhance the laser transmission. At th...

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Abstract

The invention discloses a sub-wavelength self-focusing radial polarization vertical-cavity surface-emitting laser which comprises a vertical-cavity surface-emitting laser, an N electrode, a dielectric film and an annular grating, wherein a P electrode is arranged on one surface of the vertical-cavity surface-emitting laser; the middle of the annular part of the P electrode is a light emitting surface; the N electrode is arranged on the other surface of the vertical-cavity surface-emitting laser; the dielectric film is arranged on the light emitting surface of the P electrode; and the annular grating is arranged on the dielectric film. According to the invention, the radial polarization output is obtained according to the polarization selection characteristic of the sub-wavelength annular metal grating, and the self-focusing sub-wavelength light spot is obtained through the coherence of each annular groove.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a sub-wavelength self-focusing radial polarization vertical cavity surface emitting laser and a preparation method. Background technique [0002] As an important attribute of a light source, the polarization state plays a vital role in the transmission of light and the interaction between light and matter. The effect of polarization state has been studied intensively in a wide range of applications. However, previous studies have mainly focused on the condition of spatial uniformity of polarization states (linear polarization, circular polarization, elliptical polarization). In recent years, light sources with spatially anisotropic polarization states (radial polarization and angular polarization) have attracted increasing attention. Radially polarized beams have a wide range of applications in high-density storage, high-resolution imaging, biological detection, optical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
Inventor 宋国峰蔡利康王青韦欣
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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