Preparation method of GaN based laser diode with naturally cleaved cavity surface

Abstract

This invention provides one method to process GaN extending layer natural deavage surface as laser chamber lens by use of metal Cu as chop hot deposition and supportive underlay to improve laser chamber lens optical quality and the parts integrated property index to omit polishing and dividing procedures. This invention has GaN and LD laser tube core structure not eh GaN extending slice with same isolation and circle to the laser tube core and uses deavage laser as supporting and as LD chip final deposition.

Description

technical field

[0001] The invention belongs to the field of photoelectric technology, and specifically relates to the preparation technology of a GaN-based laser diode (LD) chip. It includes the use of a laser with a wavelength shorter than the GaN bandgap absorption wavelength to peel off the GaN-based LD epitaxial layer grown on a sapphire substrate, and on this basis to prepare an LD chip with a GaN natural cleavage plane as the laser cavity mirror. Background technique

[0002] Most of the current GaN-based laser diode (LD) devices are epitaxially grown on sapphire substrates (mismatch up to 15%) with a large lattice mismatch with GaN materials, which leads to a high dislocation density in the active region of 1 ×10 8 / cm 2 At the same time, due to the inherent properties of GaN-based materials, a series of technical difficulties have been brought about for material growth and device fabrication. These mainly include difficult cleavage of the cavity mirror, difficult...

Images