Semiconductor structure, forming method thereof and field effect transistor

Abstract

The invention discloses a semiconductor structure, a forming method thereof and a field effect transistor. The semiconductor structure comprises a substrate, an interface layer, a dielectric layer and a metallic layer, wherein at least a part of the upper surface of the substrate is a nonpolar face or semipolar face formed by a nitride semiconductor crystal; the interface layer is formed on the nonpolar face or semipolar face and is prepared from either a nitride or a nitric oxide; the dielectric layer is formed on the surface, far away from the substrate, of the interface layer; the metallic layer is formed on the surface, far away from the interface layer, of the dielectric layer. Thus, the interface layer can be formed on the nonpolar face or semipolar face of the surface of the substrate, then, unstable chemical bonds can be effectively prevented from being formed on the surface of the substrate, the interface quality is improved, and then, the interface performance of the semiconductor structure can be effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology and semiconductor manufacturing, in particular, the invention relates to a semiconductor structure, a method for forming the semiconductor structure and a field effect transistor. Background technique [0002] Nitride semiconductor series materials represented by gallium nitride (GaN) (GaN, InGaN, AlGaN, InN, and AlN, etc.) have wide direct band gaps, strong atomic bonds, high thermal conductivity, and good chemical stability ( Almost not corroded by any acid) and strong radiation resistance, it has broad prospects in the application of optoelectronics, high-temperature high-power devices and high-frequency microwave devices, and is widely used in the preparation of various electronic switches and various signal amplifier. [0003] Generally, nitride semiconductor materials have a close-packed hexagonal crystal structure. According to the relative positional relationship between the wafer ...

AI Technical Summary

Problems solved by technology

[0005] However, the current structural design and preparation methods of semiconductor structures based on gallium nitride material series still need to be improved.

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