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Interface-optimized germanium-based semiconductor device and method for manufacturing same

An interface optimization and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor thermal stability of the interface layer, high interface roughness and interface state, and reduced interface quality

Inactive Publication Date: 2012-02-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Description
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Problems solved by technology

However, with SiO 2 The high thermal stability of the interfacial layer compared to GeO 2 The thermal stability of the interface layer is much worse. At a certain temperature (above 450°C), GeO 2 It will react with Ge substrate to form volatile GeO, which reduces the interface quality, such as high interface roughness and interface state, etc.

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  • Interface-optimized germanium-based semiconductor device and method for manufacturing same
  • Interface-optimized germanium-based semiconductor device and method for manufacturing same
  • Interface-optimized germanium-based semiconductor device and method for manufacturing same

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Embodiment Construction

[0014] The present invention generally relates to a semiconductor device and a method of manufacturing the same. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art will recognize the applicability of other processes and / or the use of other materials. Additionally, configurations described below in which a ...

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Abstract

The invention discloses an interface-optimized germanium-based semiconductor device and a method for manufacturing the same, wherein an optimized interface layer with high thermostability is formed on a germanium-based substrate, and then a semiconductor device is formed on the optimized interface layer. As the optimized interface layer has higher thermostability and has good compatibility with high k-gate media, the interface thermostability of the device is effectively enhanced; and in addition, the interface charge and the interface state are lowered.

Description

technical field [0001] The present invention generally relates to a semiconductor device and a manufacturing method thereof, in particular to an interface-optimized germanium-based semiconductor device and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor technology, the application of key core technologies of MOS process integrated circuits of 22 nanometers and below is an inevitable trend in the development of integrated circuits. However, with the further development of semiconductor technology, due to the limitation of Si (silicon)-based semiconductor materials Due to some inherent physical characteristics, such as electron and hole carrier mobility limitations, it is difficult to have much room for improvement in the performance of existing Si-based MOS devices. In order to further improve device performance, finding semiconductor materials with higher carrier mobility has become an inevitable trend in the developm...

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Application Information

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IPC IPC(8): H01L21/18H01L21/283H01L29/43H01L29/49
Inventor 王文武韩锴王晓磊马雪丽陈大鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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