6 results about "Tunnel injection" patented technology

The invention provides a metal oxide semiconductor quantum well structure and a preparation method thereof. The structure comprises a substrate, a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well layer, a gate oxide layer and a gate metal layer, the first barrier layer is located between the first quantum well layer and the substrate, and the first quantum well layer is used for providing carriers for a transport interface between the second quantum well layer and the gate oxide layer; the first barrier layer and the second barrier layer are made of germanium-silicon, and the second quantum well layer is made of silicon or germanium. Thus, when a voltage is applied to the gate metal layer and the transport interface between the second quantum well layer and the gate oxide layer transports carriers, the first quantum well layer located below the second quantum well layer can inject carriers into the transport interface in a tunneling injection mode, so that the effective concentration of the carriers of the transport interface is improved, and the performance of the device is improved. Therefore, the MOS type quantum well structure with high mobility and high effective carriers is realized.

The invention relates to the technical field of intelligent voltage regulation and control, and discloses an intelligent regulation and control method and device for threshold voltage of a gallium nitride power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). The method comprises the following steps: performing deep energy level transient spectrum measurement on a silicon nitride charge trapping layer of the gallium nitride power MOSFET to obtain calibrated trap density, calibrated energy level depth and calibrated barrier thickness; creating a pulse parameter mapping table; collecting the drain current of the gallium nitride power MOSFET and calculating the threshold deviation; querying a pulse parameter mapping table according to the threshold deviation to obtain a first pulse parameter, and performing temperature compensation on the first pulse parameter to obtain a second pulse parameter; and converting the second pulse parameter into a grid injection pulse, applying the grid injection pulse to the charge trapping layer, driving the electron tunneling injection trap to adjust the two-dimensional electron gas concentration, and outputting a regulated threshold voltage. According to the invention, high-precision stable regulation and control of the threshold voltage in a wide working range are realized, and the reliability and switching performance of the gallium nitride power MOSFET are improved.

The application discloses a semiconductor laser element in the violet-ultraviolet wave band, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer, wherein the upper waveguide layer and the upper confinement layer are provided with an interlayer coherent hole tunneling layer, and the interlayer coherent hole tunneling layer comprises a first interlayer coherent hole tunneling layer, a second interlayer coherent hole tunneling layer and a third interlayer coherent hole tunneling layer. The application constructs a highly periodic electrostatic potential, tunes Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers in the laser, reduces the Mg acceptor activation energy of the p-type semiconductor, improves the ionization efficiency of Mg, thereby inducing the interlayer coherent hole tunneling injection of the hole generation layer of the laser into the active layer, improving the hole injection efficiency of the active layer, improving the matching degree and uniformity of the electrons and holes in the active layer, and improving the optical power and slope efficiency of the laser element.

The invention discloses a tunnel injection super junction structure, a power device and a preparation method, and belongs to the technical field of power device preparation, the super junction structure comprises at least two adjacent epitaxial layers, and each epitaxial layer comprises an epitaxial region and a dielectric cylinder region; the dielectric cylinder region on the upper layer is formed by tunnel ion implantation, a CSL region is arranged in the epitaxial layer on the lower layer, and the CSL region is arranged below the N-type epitaxial region or the N-type dielectric cylinder region and is in contact with the N-type epitaxial region or the N-type dielectric cylinder region in the upper layer and the lower layer. The tunnel ion implantation technology is applied in the multi-time epitaxial process, so that the problems of large required implantation energy, shallow implantation depth and multiple epitaxial times in the traditional multi-time epitaxial process are solved.

The embodiment of the application discloses a vertical channel transistor structure, which introduces a contact layer between a source and a dielectric layer and between a drain and the dielectric layer. The two contact layers have low resistance, high doping concentration and good metal contact, and can form an ohmic contact between the source, the drain and a semiconductor channel layer. When the vertical channel transistor of the structure works, electrons can directly pass through a potential barrier from the source into the semiconductor channel layer and from the semiconductor channel layer into the drain by using wave motion, that is, tunneling injection of current is realized, the contact resistance of the vertical channel transistor is greatly reduced, and the working current of the vertical channel transistor is increased.

Quantum cascade lasers (QCLs) are provided, which in embodiments comprise a plurality of stages, each stage comprising alternating quantum well layers and barrier layers, wherein each stage is configured, upon application of an electric field F across the plurality of stages, to inject carriers from a low energy state of an adjacent, upstream stage of the plurality of stages into a high energy state of a lasing stage of the plurality of stages, via tunneling injection through multiple barrier layers comprising barrier layers of the adjacent, upstream stage and barrier layers of the lasing stage, wherein carriers in the lasing stage undergo intraband transitions from an upper laser level of the lasing stage to at least one lower laser level of the lasing stage with the emission of laser light and without carrier leakage.