Double-injection multiplication type organic photoelectric detector and preparation method thereof

A photodetector and double-injection technology, which is applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve the problem of low dark current, achieve the effects of reducing photocurrent, improving external quantum efficiency, and being easy to implement

Active Publication Date: 2020-11-03
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a double-injection multiplication type organic photodetector, which solves the problem that the dark current in the prior art is too low

Method used

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  • Double-injection multiplication type organic photoelectric detector and preparation method thereof
  • Double-injection multiplication type organic photoelectric detector and preparation method thereof
  • Double-injection multiplication type organic photoelectric detector and preparation method thereof

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preparation example Construction

[0044] A method for preparing a double injection multiplied organic photodetector, comprising the following steps:

[0045] Step 1, first coating the ITO electrode layer 2 on the glass substrate 1, and then cleaning the glass substrate 1;

[0046] Specifically, first use deionized water to ultrasonically clean the glass substrate 1 for 15 minutes to 20 minutes, then use acetone to ultrasonically clean the glass substrate 1 for 15 minutes to 20 minutes, then use absolute ethanol to ultrasonically clean it for 15 minutes to 20 minutes, and blow it with pure nitrogen. dry or infrared drying, and finally use ultraviolet ozone to light-clean the glass substrate 1;

[0047] Step 2, vapor-deposit C on the glass substrate 1 treated in step 1 60 , forming an anode buffer layer 3;

[0048] Step 3, first connect P3HT, PC 61 BM, C 70 Dissolving in dichlorobenzene to form a mixed solution, spin coating the mixed solution on the surface of the anode buffer layer 3, and annealing the gla...

Embodiment 1

[0054] Step 1. First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1. First, use deionized water to ultrasonically clean the glass substrate 1 for 15 minutes, and then use acetone to clean the glass substrate 2. Ultrasonic cleaning for 16 minutes, then ultrasonic cleaning with absolute ethanol for 18 minutes, and drying with pure nitrogen or infrared drying, and finally optical cleaning of the glass substrate 1 with ultraviolet ozone;

[0055] Step 2. On the glass substrate 1 processed in step 1, a vacuum evaporation machine evaporates C with a thickness of 15 nm. 60 As an anode buffer layer 3;

[0056] Step 3, first connect P3HT, PC 61 BM, C 70 Dissolve in dichlorobenzene to form a mixed solution, spin coat the mixed solution on the anode buffer layer 3, and anneal the glass substrate 1 after spin coating to form an active layer 4 with a thickness of 150 nm;

[0057] Among them, P3HT: PC 61 BM: C 70 The mass ratio is 10:10:0....

Embodiment 2

[0061] Step 1. First coat the ITO electrode layer 2 on the glass substrate 1, and then clean the glass substrate 1. First, use deionized water to ultrasonically clean the glass substrate 1 for 16 minutes, and then use acetone to clean the glass substrate 1. Ultrasonic cleaning for 18 minutes, then ultrasonic cleaning for 18 minutes with absolute ethanol, and drying with pure nitrogen or infrared drying, and finally optical cleaning of the glass substrate 1 with ultraviolet ozone;

[0062] Step 2, on the glass substrate 1 processed by step 1, vacuum evaporation machine vapor deposition thickness is 10nm C 60 As an anode buffer layer 3;

[0063] Step 3, first connect P3HT, PC 61 BM, C 70 Dissolve in dichlorobenzene to form a mixed solution, spin coat the mixed solution on the anode buffer layer 3, and anneal the glass substrate 1 after spin coating to form an active layer 4 with a thickness of 190 nm;

[0064] Among them, P3HT: PC 61 BM: C 70 The mass ratio is 10:10:0.3, th...

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Abstract

The invention discloses a double-injection multiplication type organic photoelectric detector and a preparation method thereof, and the double-injection multiplication type organic photoelectric detector comprises a glass substrate, wherein the surface of the glass substrate is plated with an ITO electrode layer, and the ITO electrode layer is sequentially coated with an anode buffer layer, an active layer and an Al electrode layer from bottom to top; the anode buffer layer is made of C60, the active layer is made of a mixture of P3HT, PC61BM and C70, and the P3HT, the PC61BM and the C70 forma bulk heterojunction. C60 is added into the device to serve as a hole blocking layer, and meanwhile, a small amount of C70 material is doped into an active layer to serve as an electron trap, so tunneling injection of holes is increased, external quantum efficiency is improved, photocurrent is reduced, and photoelectric performance of the detector is improved; the working voltage is small, and the circuit can work under a small bias voltage of 1V; the preparation method of the double-injection multiplication type organic photoelectric detector is simple to operate and easy to implement.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductors, and relates to a double-injection multiplying type organic photodetector, and also relates to a preparation method of the organic photodetector. Background technique [0002] With the development of organic semiconductor materials, they can be widely used in photodetectors due to their high quantum efficiency, simple preparation process, easy processing into large areas, less pollution, and low cost. For photoelectric conversion devices such as photodetectors, the preparation of active layers with good photoelectric properties is one of the key technologies. [0003] Although photodetectors with conventional structures have low operating voltage and current noise, however, since the external quantum efficiency is less than 100%, the responsivity will not be too high. Therefore, by enhancing the photoresponsivity of organic photodetectors (OPDs) It is very important to improve the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/44H01L51/48
CPCH10K71/00H10K71/16H10K85/211H10K30/20H10K30/87Y02E10/549Y02P70/50
Inventor 安涛张俊
Owner XIAN UNIV OF TECH
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