5 results about "Electron trapping" patented technology

The application provides a cyclic olefin copolymer-furfuryl dihydrazone composite dielectric film and a preparation method thereof. The composite dielectric film comprises a cyclic olefin copolymer and furfuryl dihydrazone dispersed in the cyclic olefin copolymer, and the mass of the furfuryl dihydrazone is 0.05% to 0.3% of the mass of the cyclic olefin copolymer. The preparation method comprises the following steps: mixing and dissolving the cyclic olefin copolymer and the furfuryl dihydrazone in toluene; casting the blended solution into a film, and obtaining the film by volatilizing the toluene; and performing heat annealing treatment on the film in a vacuum drying box and peeling off the film. The energy level difference between the furfuryl dihydrazone and the cyclic olefin copolymer is used to construct deep electron traps in the film, and high-energy electrons are captured to inhibit carrier transport. Meanwhile, the intermolecular hydrogen bond is used to increase the molecular chain spacing. The application effectively improves the breakdown strength, discharge energy density and thermal stability of the composite film in a high-temperature environment, and avoids interface defects caused by inorganic fillers.

This invention discloses a lithium-doped crystalline silicon photovoltaic cell, silicon wafer, ingot, and doping method thereof, belonging to the field of photovoltaic cells. By combining appropriate amounts of impurity lithium and impurity boron with lithium to form p-type first lithium silicon, lithium, with an electronegativity of only 0.98, saturates some of the boron atom holes when not exposed to high-energy space radiation. Upon exposure to high-energy space radiation, on the one hand, the outer electrons of lithium are easily attracted by electron traps, objectively passivating the electron traps and "releasing" the boron atom holes. As a result, the majority carrier holes in the p-type silicon material increase, and the conductivity increases instead of decreasing. On the other hand, due to the "accompaniment" of positive lithium ions to the electron traps, the probability of the electron traps capturing photogenerated minority carrier holes is greatly reduced, which is beneficial to improving the photoelectric conversion efficiency of the space cell.

The application discloses a kind of based on fluorenyl small molecule molecular field effect transistor memory and preparation method thereof, belong to information storage technical field.The charge capture layer of the memory is made into single film by the way of solution processing after being made by fluorenyl small molecule material 3Ph-TrH, and the spiro structure of small molecule material 3Ph-TrH effectively increases steric hindrance, inhibits the effect of charge leakage, with excellent hole trapping capacity and electron trapping capacity, so that memory device shows bipolar storage (42.8V), high stability, good resistance and other excellent performance, the mobility of the single-molecule thin film device reaches 0.35cm 2 V ‑1 s ‑1 , switch ratio exceeds 10 5 , higher maintenance performance;In addition, the preparation process of the memory device is simple, can greatly reduce production cost, is conducive to the popularization and application of this kind of device.

The present application belongs to the technical field of electrochemistry and environmental wastewater treatment, and discloses a method for electrochemically degrading antibiotics by MWCNTs-P-NiCu monatomic catalyst combined with Ti / SnO2. A MWCNTs-P-NiCu monatomic catalyst modified carbon felt electrode is prepared, and in the electrocatalytic reaction, the electrode surface promotes the generation of a large number of active free radicals ROS under the synergistic action of the interface electric field and the electron migration channel. The surface of the modified Ti / SnO2 anode is rich in lattice oxygen. The loss of lattice oxygen will form oxygen vacancies, which act as electron trapping centers or active sites, further enhancing the conductivity and catalytic performance of the material. The composite degradation system prepared by the present application can effectively degrade NOR wastewater, and the degradation rate and defluorination rate can reach 100% in 2-3 h. The degradation rate of TOC reaches 78% in 6 h. After 10 cycles, the degradation rate remains 89.0%, effectively reducing the toxicity of NOR.

The application relates to the technical field of nanomaterial preparation, in particular to a method for synthesizing a zinc-sulfur double-vacancy Zn3In2S6 photocatalyst, wherein specific-volume ammonia water is mixed with deionized water to form a solvent, zinc sulfate, indium trichloride and thioacetamide precursors are added, and after uniform stirring, one-step hydrothermal reaction is carried out at 160 DEG C for 12 hours, and the product is obtained through centrifugal washing and vacuum drying. Through the coordination induction effect of ammonia water, zinc vacancies and sulfur vacancies are in-situ constructed in the Zn3In2S6 crystal lattice, the introduced defect energy level is used as an electron trap to capture photo-generated electrons, carrier recombination is inhibited, and the surface active site is increased. The application can significantly improve the hydrogen production activity under visible light, the hydrogen evolution rate is 2.25 times that of the hydrogen production activity without adding ammonia water, and the application has the advantages of simple process route, excellent catalytic performance and strong structural stability.