43 results about "Electron trapping" patented technology

The invention relates to the technical field of photocatalysts, in particular to a bismuth-defect bismuth oxybromide-sulfur-defect bismuth sulfide bromide heterojunction and a preparation method and application thereof in photocatalytic CO2 reduction, Bi (NO3) 3.5 H2O, thiourea, cetyltrimethylammonium bromide (CTAB) and the like are used as raw materials, and the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction is prepared through a two-step hydrothermal method. According to the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction, bismuth vacancies and sulfur vacancies are introduced, the visible light absorption range of the material is expanded through a proper amount of double vacancies, more electron capture centers are provided, and the separation efficiency of photo-induced electrons and the vacancies is improved, so that the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction has excellent performance of photocatalytic reduction of CO2, and the preparation method of the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction is suitable for large-scale production and application of the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction. CO2 can be reduced into a single product CO, and the photoreduction efficiency of the carbon dioxide can be improved.

Provided is a semiconductor device including a substrate, a stacked structure including a plurality of gate electrodes and a plurality of interlayer insulating layers, and a plurality of channel structures penetrating the stacked structure. Each of the plurality of channel structures includes a channel poly layer, a crystalline layer including hafnium (Hf) or zirconium (Zr), an electron trap layer, and a plurality of gate insulating layers positioned between the electron trap layer and the plurality of gate electrodes at a height corresponding to the plurality of gate electrodes. The crystalline layer includes a plurality of ferroelectric layers positioned at a height corresponding to the plurality of gate electrodes, and a plurality of paraelectric layers positioned at a height corresponding to the plurality of interlayer insulating layers. The plurality of ferroelectric layers and the plurality of paraelectric layers have different crystal structures while containing the same material.

This invention discloses a deep defluorination agent and its application method, specifically relating to the field of defluorination agents (GMS-FS series products). It includes a valence-state switching active phase, a reaction interface building component, a dynamic electronic regulation component, and a structure adjustment and protection component. The valence-state switching active phase provides a reversible valence-state transition reaction center, achieving specific capture of fluoride ions through an electron trapping effect when interacting with them. The reaction interface building component forms a polar gradient interface layer on the surface of the defluorination agent, guiding fluoride ions to migrate towards the active center and locally enrich them, thereby improving defluorination efficiency. By constructing a rare metal valence-state switching active phase with La2O3 and UO2 as its core, combined with a polar gradient interface guiding layer and a dynamic electronic regulation mechanism, preferential migration and specific capture of fluoride ions are induced in a multi-ion coexistence environment, achieving stable deep defluorination under high salinity and highly competitive ion conditions.

The application belongs to the technical field of chemical looping combustion, and discloses a nano oxygen carrier particle, a photo reactor and a chemical looping system. The nano oxygen carrier particle comprises a metal oxide, a noble metal / rare earth metal and a semiconductor material. The metal oxide has oxidizing property. The semiconductor material generates photo-generated holes and photo-generated electrons under light irradiation. The photo-generated holes have oxidizing property, and the photo-generated electrons have reducing property. The noble metal serves as a catalytic site and forms a Schottky barrier with the semiconductor. The Schottky barrier continuously captures the photo-generated electrons to improve the separation efficiency of the photo-generated electron-photo-generated hole pair. The application further discloses a photo reactor and a chemical reaction chain using the nano oxygen carrier. Through the application, the multifunctional nano oxygen carrier particle with lattice oxygen transfer, photocatalysis and thermal catalysis is synthesized, the operation temperature of the chemical looping system is below 200 DEG C, the low-temperature chemical looping combustion process is realized, and the sintering and agglomeration of the oxygen carrier material are avoided.

The embodiment of the invention discloses a storage method of a field effect transistor, a readable storage medium and a storage system, and the storage method comprises the steps: firstly applying a positive or negative pulse to a grid electrode of a ferroelectric polarization auxiliary charge trapping field effect transistor, so as to enable the field effect transistor to be in an electron trapping state or a hole trapping state; and writing information in an electron capture state or a hole capture state. On the basis of the application, the situation that a large number of electrons or holes are injected and captured in the pulse process of the grid electrode of the field effect transistor, so that the read threshold voltage drifts is considered, the threshold voltage difference value generated by capturing of the electrons or the holes is used as a storage window, information storage is realized, and the reading efficiency is improved. The memory function is realized by utilizing the phenomenon that electrons or holes induced by ferroelectricity are captured and the part of electrons or holes can be retained in a gate medium for a certain time, and a single-transistor DRAM (Dynamic Random Access Memory) memory device with the size of 4F2 is realized.

The invention relates to the technical field of photocatalysis, in particular to a Yb < 3 + > / Er < 3 + > co-doped full-spectrum response Ti-MOF / BiOBr S type heterojunction as well as a preparation method and application thereof. The invention provides an S-type heterojunction composite catalyst, which is mainly prepared from squaric acid, a titanium source, Yb < 3 + > and Er < 3 + > doped BiOBr nanosheets, and the mass ratio of the BiOBr nanosheets in the catalyst is 60%-95%. The high specific surface area of the IEF-11 is beneficial to pollutant enrichment, and the addition of the nanosheet can expand the photoresponse range and can be used as an electron trapping agent, so that the sunlight utilization rate and the photocatalytic performance are improved; the constructed S-type heterojunction can promote separation of photon-generated carriers, and meanwhile, the strong oxidation-reduction capacity of a composite system is reserved. The catalyst has the capabilities of full-spectrum response, efficient degradation of organic pollutants and inactivation of microorganisms, and has a wide application prospect.

The invention relates to the field of cable insulating materials, in particular to a double-layer network heat-conducting composite insulating material for cables and a preparation method thereof.The material comprises an inner heat-conducting layer, a transition layer and an outer insulating layer, and in the inner layer, a three-dimensional heat-conducting network is built through a vertically-oriented boron nitride nanotube and reduced graphene oxide-boron nitride nanosheet heterostructure; flexible polymer brush grafted nanoparticles are introduced into the transition layer, so that thermal mismatch is relieved; and the outer layer is cooperated with GO-QDs by coating Al2O3 with a temperature response polymer, so that high-temperature interface self-enhancement and electron trap effects are realized, and the breakdown strength is greater than or equal to 45kV / mm. The material disclosed by the invention has the performance retention rate gt after being aged at 180 DEG C and 35 kV for 1000 hours; and meanwhile, the thermal resistance is reduced by more than or equal to 75%, the tensile strength is improved by more than or equal to 50%, the service life is remarkably prolonged, and the insulating material can be widely applied to insulation of electric automobiles and ultrahigh-voltage cables.

The invention relates to the technical field of photocatalytic materials, in particular to a covalent organic framework material as well as a preparation method and application thereof. The covalent organic framework material has a repeating unit with a structure as shown in a formula I. A covalent organic framework material based on a benzothiadiazole (BT) core is modified through an electron donating group-OCH3, a non-uniform p-pi conjugated system is further constructed through the synergistic effect of-F and-OCH3, the electronic structure of the COF material is accurately regulated and controlled, a built-in electric field is enhanced, exciton binding energy is reduced, and the shallow trap life is prolonged; according to the preparation method, the formation of deep electron traps and charge recombination are effectively inhibited, the photocatalytic performance is improved, a novel material with enhanced performance is provided for repairing a radioactive pollution environment, and uranium (VI) reduction can be efficiently catalyzed under an illumination condition.

The invention provides a method for adjusting the threshold voltage of an MOS transistor, and the method comprises the steps: providing a substrate which comprises a first channel, a second channel, a first oxidation layer and a second oxidation layer, the first oxidation layer covers the surface of the first channel, and the second oxidation layer covers the surface of the second channel; performing first particle irradiation on the first oxide layer, and forming a plurality of electron traps in the first oxide layer; performing second particle irradiation on the second oxide layer, and forming a plurality of hole traps in the second oxide layer; and performing electromagnetic wave irradiation on the substrate, so that electrons in the substrate are transitioned and captured by the electron trap, and holes in the substrate are transitioned and captured by the hole trap. The method can be used for optimizing and adjusting the threshold voltage of the MOS transistor.

The application discloses a nitride light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductor devices. The nitride light-emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type layer, a combination layer, an electron blocking layer and a P-type layer which are sequentially stacked on the substrate; the combination layer comprises an electron trap layer and a polarization layer which are sequentially grown from bottom to top; the electron trap layer comprises Mg-doped ScGaN layers and BGaN layers which are periodically and alternately grown from bottom to top; and the polarization layer comprises N-face polar quantum well layers, N-face polar quantum barrier layers, Ga-face polar AlGaN layers and N-face polar Si-doped InAlGaN layers which are periodically and alternately grown from bottom to top. The nitride light-emitting diode epitaxial wafer can increase the effective recombination efficiency of holes and electrons, reduce electron overflow and reduce the Stark efficiency of multiple quantum wells, thereby improving the light-emitting efficiency of a GaN-based LED chip, and solving the problem of low light-emitting efficiency of a current GaN-based LED.

According to the preparation method disclosed by the invention, ammonium tungstate, Bi (NO3) 35H2O and NaBr are used as precursors, and the oxygen-enriched BiOBr / WO3 heterojunction photocatalyst with the photochromic effect is prepared by adopting a one-step hydrothermal method. The preparation method comprises the following steps: firstly, dissolving mannitol and hexadecyl trimethyl ammonium bromide in water, and then sequentially adding Bi (NO3) 3.5 H2O, a certain amount of ammonium tungstate ((NH4) 10H (W2O7) 6.xH2O) and an aqueous solution containing a bromine source; and carrying out hydrothermal reaction on the obtained mixed solution, and then washing and drying to prepare the BiOBr / WO3 ultrathin nanosheet. The prepared BiOBr / WO3 heterojunction ultrathin nanosheet with the photochromic effect can be used for photocatalytic oxidation reaction of ethylbenzene at normal temperature and pressure under visible light irradiation, and the excellent photocatalytic performance of the BiOBr / WO3 heterojunction ultrathin nanosheet is derived from the synergistic effect of a heterojunction structure and photochromism. On one hand, due to the construction of the heterojunction, the visible light absorption range is widened, the transportation distance of charges is shortened, and favorable conditions are provided for photocatalytic reaction; on the other hand, the photochromic effect induced W < 6 + > / W < 5 + > species can be used as an electron capture center to capture and store photogenerated electrons, so that the separation and transfer efficiency of photogenerated charges is effectively improved.

The invention discloses a lithium-doped crystalline silicon photovoltaic cell, a silicon wafer, a crystal ingot and a doping method thereof, and belongs to the field of photovoltaic cells. A proper amount of impurity lithium and impurity boron are combined and doped to form p-type first lithium silicon, the electronegativity of the lithium element is only 0.98, when space high-energy irradiation is not encountered, doped lithium saturates holes of part of boron atoms, and when space high-energy irradiation is encountered, on one hand, outer layer electrons of lithium are easily attracted by an electron trap, and on the other hand, the outer layer electrons of lithium are easily attracted by an electron trap; passivation of electron traps and'release 'of boron atom holes are objectively formed, and as a result, multi-sub-holes of the p-type silicon material are increased, and the conductivity is increased instead of being reduced; on the other hand, due to the fact that positive lithium ions accompany the electron trap, the probability that the electron trap captures a photo-generated minority carrier hole is greatly reduced, and the photoelectric conversion efficiency of the space battery can be improved.

The invention discloses an OV-Fe3O4 / bamboo charcoal composite photocatalyst rich in oxygen vacancies, a preparation method of the OV-Fe3O4 / bamboo charcoal composite photocatalyst and application of the OV-Fe3O4 / bamboo charcoal composite photocatalyst in photodegradation of orlistat. According to the OV-Fe3O4 / bamboo charcoal composite photocatalyst rich in the oxygen vacancies, the oxygen vacancies can serve as electron traps, photo-induced electrons are rapidly captured, the service life of current carriers is prolonged, and the charge utilization efficiency is improved. SEM, XRD and FT-IR prove that a semiconductor-carbon material heterojunction is formed between OV-Fe3O4 rich in oxygen vacancies and bamboo charcoal, which is beneficial to the cooperation of the oxygen vacancies and the high specific surface area and pore structure of the bamboo charcoal, improves the catalytic efficiency of adsorption-enrichment-photodegradation of pollutants, and is especially suitable for low-concentration orlistat wastewater treatment. In addition, due to the structural design, the oxygen vacancy activity of OV-Fe3O4, the adsorption enrichment capacity of bamboo charcoal and the magnetic separation performance form a collaborative closed loop, and a material basis with high efficiency and practicability is provided for large-scale photocatalytic water treatment.

The application discloses an array substrate, a display panel and a preparation method of the array substrate. The method comprises the following steps: sequentially forming a gate electrode and a gate insulating layer on a substrate; forming an active region on the gate insulating layer, wherein the active region is made of an oxide semiconductor material, and the active region is doped with an electron trapping element as a positive center; forming a source / drain electrode on the active region, and forming an insulating protective layer on the source / drain electrode. The application provides an array substrate, a display panel and a preparation method of the array substrate, which have better light stability and better performance.

The invention discloses environment-friendly transformer insulating oil, which is prepared from the following raw materials in percentage by mass: 50 to 70 percent of non-edible algae oil base; 1%-5% of a light response self-repairing microcapsule; 3%-8% of an electron trapping agent; 2%-5% of a heat conduction reinforcing agent; 12%-44% of a lipid carrier; the invention relates to the technical field of insulating materials. According to the environment-friendly transformer insulating oil, spirulina and chlorella are taken as raw materials, so that the environment-friendly transformer insulating oil does not compete with food crops, negative carbon emission is realized, the environment-friendly transformer insulating oil has good biodegradability, the environment-friendly transformer insulating oil is matched with an electron trapping agent to form an electron trap, the partial discharge intensity is reduced, the oxidation induction period is prolonged, the breakdown voltage threshold value is increased, and the service life of the transformer is prolonged. The heat conduction reinforcing agent is used for constructing a difunctional network, the electron mobility is reduced, meanwhile, a heat conduction path is formed, the heat conduction coefficient is increased, the heat resistance is reduced, the light response self-repairing microcapsule is arranged in a matched mode and fractures during partial discharge, support is provided for microcrack repairing of the insulation paper, and the insulation paper has the advantage of being diversified in function.

The application provides a cyclic olefin copolymer-furfuryl dihydrazone composite dielectric film and a preparation method thereof. The composite dielectric film comprises a cyclic olefin copolymer and furfuryl dihydrazone dispersed in the cyclic olefin copolymer, and the mass of the furfuryl dihydrazone is 0.05% to 0.3% of the mass of the cyclic olefin copolymer. The preparation method comprises the following steps: mixing and dissolving the cyclic olefin copolymer and the furfuryl dihydrazone in toluene; casting the blended solution into a film, and obtaining the film by volatilizing the toluene; and performing heat annealing treatment on the film in a vacuum drying box and peeling off the film. The energy level difference between the furfuryl dihydrazone and the cyclic olefin copolymer is used to construct deep electron traps in the film, and high-energy electrons are captured to inhibit carrier transport. Meanwhile, the intermolecular hydrogen bond is used to increase the molecular chain spacing. The application effectively improves the breakdown strength, discharge energy density and thermal stability of the composite film in a high-temperature environment, and avoids interface defects caused by inorganic fillers.

This invention discloses a lithium-doped crystalline silicon photovoltaic cell, silicon wafer, ingot, and doping method thereof, belonging to the field of photovoltaic cells. By combining appropriate amounts of impurity lithium and impurity boron with lithium to form p-type first lithium silicon, lithium, with an electronegativity of only 0.98, saturates some of the boron atom holes when not exposed to high-energy space radiation. Upon exposure to high-energy space radiation, on the one hand, the outer electrons of lithium are easily attracted by electron traps, objectively passivating the electron traps and "releasing" the boron atom holes. As a result, the majority carrier holes in the p-type silicon material increase, and the conductivity increases instead of decreasing. On the other hand, due to the "accompaniment" of positive lithium ions to the electron traps, the probability of the electron traps capturing photogenerated minority carrier holes is greatly reduced, which is beneficial to improving the photoelectric conversion efficiency of the space cell.

The application discloses a kind of based on fluorenyl small molecule molecular field effect transistor memory and preparation method thereof, belong to information storage technical field.The charge capture layer of the memory is made into single film by the way of solution processing after being made by fluorenyl small molecule material 3Ph-TrH, and the spiro structure of small molecule material 3Ph-TrH effectively increases steric hindrance, inhibits the effect of charge leakage, with excellent hole trapping capacity and electron trapping capacity, so that memory device shows bipolar storage (42.8V), high stability, good resistance and other excellent performance, the mobility of the single-molecule thin film device reaches 0.35cm 2 V ‑1 s ‑1 , switch ratio exceeds 10 5 , higher maintenance performance;In addition, the preparation process of the memory device is simple, can greatly reduce production cost, is conducive to the popularization and application of this kind of device.

The invention provides a photovoltaic-multiplication dual-mode photoelectric detector based on adjustable bias polarity and a preparation method thereof, the photovoltaic-multiplication dual-mode photoelectric detector adopts a multi-layer structure design, and specifically comprises a transparent substrate, a first conductive electrode layer, an electron transport layer, a photosensitive active layer, a hole transport layer and a second conductive electrode layer from bottom to top in sequence; the photosensitive active layer is a heterojunction formed by an organic polymer donor and a fullerene acceptor. Under forward bias voltage, the electron trap captures photo-induced electrons and triggers energy band bending, so that holes can be tunneled and injected from an external circuit, and a high-gain photomultiplication type detection mode is realized; under reverse bias voltage, photo-generated holes and electrons in the heterojunction are respectively collected by the hole transport layer and the electron transport layer, and a photovoltaic detection mode is realized. Through the cooperative detection capability of the double working modes, the detector has the advantages of a photovoltaic mechanism and a multiplication mechanism, has tunable dark current and photoelectric gain, and can ensure the flexible detection of the photoelectric detector on strong light or weak light.

The application provides a weak light detection structure and a preparation method thereof. The weak light detection structure comprises an insulating layer, a floating gate layer formed on the insulating layer, and an active layer formed on the floating gate layer; a surface of the insulating layer in contact with the floating gate layer is formed with a material layer as an electron trap state, the floating gate layer is composed of a matrix layer and lead sulfide quantum dots dispersed in the matrix layer, the material of the matrix layer is selected to be an insulating polymer material, and the lead sulfide quantum dots can be uniformly dispersed in the matrix layer. The scheme of the application does not require the energy level matching of the active layer and the charge storage layer, and the device mobility and stability are not affected. Meanwhile, the material of the active layer can grow on the flat surface of the floating gate layer to form a highly ordered crystalline thin film, which is beneficial to improve the device mobility and reduce the sub-threshold swing, thereby increasing the photocurrent and improving the weak light detection capability of the device.

The invention provides an Hf and Ce co-doped yttrium lutetium silicate scintillation crystal as well as a preparation method and application thereof, and relates to the technical field of scintillation crystal material preparation. The chemical formula of the yttrium lutetium silicate scintillation crystal is (Hf < x > Ce < y > Y < z > Lu < 1-x-y-z >) < 2 > SiO < 5 >, x is less than or equal to 0.1, 0lt; y is less than or equal to 0.05, 0lt; z is less than or equal to 0.2, and is prepared by co-doping tetravalent Hf ions (Hf < 4 + >) in the lutetium yttrium silicate Ce-doped crystal, the introduction of Hf < 4 + > competes with oxygen vacancies and shallow electron traps in the crystal to capture electrons, and the concentration of the electron traps is effectively reduced, so that the fluorescence and flicker decay time of the crystal is effectively shortened, and the response speed of the crystal to radiation is improved.

The present disclosure provides a semiconductor device and a preparation method thereof, a chip and an electronic device, and relates to the technical field of semiconductors, and aims to solve the problem of reverse bias and / or dynamic resistance caused by body electron traps or interface state traps. The semiconductor device comprises a substrate, an epitaxial layer, a barrier layer, a gate, a cap layer, a source, a drain and a functional layer. The epitaxial layer and the barrier layer are stacked on the substrate, and the barrier layer is farther away from the substrate than the epitaxial layer. The gate is located on the side of the barrier layer away from the substrate. The cap layer is located between the barrier layer and the gate. The source and the drain are located on the side of the barrier layer away from the substrate, and are respectively located on the opposite sides of the gate. The functional layer is located on the side of the barrier layer away from the substrate. The functional layer and the drain are located on the same side of the gate, and the functional layer and the drain are connected. The thickness of the functional layer is less than the thickness of the cap layer.

The invention discloses a ferroelectric transistor read-write method with high durability and high current reliability. A used ferroelectric transistor comprises a P-type doped semiconductor substrate, an N-type doped source electrode, a P-type doped drain electrode, a ferroelectric gate stack and a control gate. Corresponding level or floating operation is applied to the source electrode, the drain electrode and the control gate respectively in the write-in and read-out operation processes. The source electrode is floated in the writing process, so that excessive electron trapping is avoided, electrons required by ferroelectric flipping are provided by utilizing a band-to-band tunneling mechanism at the drain electrode, the increase of interface traps is reduced, and the durability is improved. In the read-out stage, the band-to-band tunneling current at the source electrode is used for reading out, and the current is not influenced by an interface state generated at the drain electrode in the writing process, so that excellent current reliability is obtained. The method does not involve the change of the gate stack material and structure of the ferroelectric transistor, does not need to introduce additional recovery cycle and corresponding area and delay cost, and is high in practical value.

The present application belongs to the technical field of electrochemistry and environmental wastewater treatment, and discloses a method for electrochemically degrading antibiotics by MWCNTs-P-NiCu monatomic catalyst combined with Ti / SnO2. A MWCNTs-P-NiCu monatomic catalyst modified carbon felt electrode is prepared, and in the electrocatalytic reaction, the electrode surface promotes the generation of a large number of active free radicals ROS under the synergistic action of the interface electric field and the electron migration channel. The surface of the modified Ti / SnO2 anode is rich in lattice oxygen. The loss of lattice oxygen will form oxygen vacancies, which act as electron trapping centers or active sites, further enhancing the conductivity and catalytic performance of the material. The composite degradation system prepared by the present application can effectively degrade NOR wastewater, and the degradation rate and defluorination rate can reach 100% in 2-3 h. The degradation rate of TOC reaches 78% in 6 h. After 10 cycles, the degradation rate remains 89.0%, effectively reducing the toxicity of NOR.

The application discloses a kind of monodisperse metal loaded tungsten oxide nanowires and its preparation method and application, tungsten oxide nanowire is mixed uniformly by impregnation method and soluble metal salt, then it is placed in H2 / Ar atmosphere and is burned to obtain monodisperse metal / tungsten oxide;The metal is at least one of Fe, Cu, Co.This catalyst has abundant oxygen vacancy, as electron trap center, is favorable to nitrogen adsorption and activation, significantly improves the activity of photocatalytic nitrogen fixation;Single dispersion metal as new nitrogen adsorption site and active site is loaded simultaneously, is favorable to NRR reaction, significantly improves the performance of photocatalytic nitrogen fixation.

The invention discloses a side chain screening method and system for improving the insulating property of an insulating polymer, and belongs to the technical field of chemical engineering. Determining an energy gap value, an electron trap energy level, a hole trap energy level, a free volume element and a maximum hole diameter and a maximum phonon frequency of each molecular model; determining a trap depth sum through an electron trap energy level and a hole trap energy level, and weighting the trap depth sum with an energy gap value to determine an electron injection factor; determining the number of free volume intervals by dividing the free volume elements into volume intervals; and determining a carrier acceleration factor according to the free volume interval number, the maximum hole diameter and a preset critical diameter, further constructing a breakdown potential comprehensive scoring model taking the breakdown potential index as output, and carrying out comprehensive scoring on the breakdown potential of each molecular model. The method can accurately and comprehensively measure the potential of the alternative side chain for improving the breakdown performance of the polymer.

The present disclosure provides a thin film light-emitting device, a preparation method thereof and a display panel, and belongs to the technical field of display. The thin film light-emitting device comprises an anode, a hole transport layer, a light-emitting layer and a cathode which are sequentially stacked; wherein the hole transport layer comprises a hole transport material and an electron trap material; the LUMO energy level of the electron trap material is less than the LUMO energy level of the hole transport material. The thin film light-emitting device can improve the stability of the hole transport layer.

The application relates to the technical field of nanomaterial preparation, in particular to a method for synthesizing a zinc-sulfur double-vacancy Zn3In2S6 photocatalyst, wherein specific-volume ammonia water is mixed with deionized water to form a solvent, zinc sulfate, indium trichloride and thioacetamide precursors are added, and after uniform stirring, one-step hydrothermal reaction is carried out at 160 DEG C for 12 hours, and the product is obtained through centrifugal washing and vacuum drying. Through the coordination induction effect of ammonia water, zinc vacancies and sulfur vacancies are in-situ constructed in the Zn3In2S6 crystal lattice, the introduced defect energy level is used as an electron trap to capture photo-generated electrons, carrier recombination is inhibited, and the surface active site is increased. The application can significantly improve the hydrogen production activity under visible light, the hydrogen evolution rate is 2.25 times that of the hydrogen production activity without adding ammonia water, and the application has the advantages of simple process route, excellent catalytic performance and strong structural stability.

The invention belongs to the technical field of luminescent materials, and discloses long afterglow nanoparticles, a nanoprobe, a double-probe system and a detection method. The general chemical formula of the long afterglow nanoparticles is Li < x > Zn < 1-x > Ga < 2 > O < 4 >: Cr, and the value range of x is 0.1-0.5. According to the long-afterglow nanoparticles provided by the invention, the industrial problem that the luminescent property of ZnGa2O4: Cr < 3 + > PLNPs synthesized by a hydrothermal method is poor is successfully solved through an innovative doping strategy that Zn < 2 + > is partially replaced by Li < + >. The doping of Li < + > effectively optimizes the lattice structure and the concentration and depth of electron traps, so that the afterglow intensity and average life of the material in a near-infrared window are enhanced in a breakthrough manner. A hydroxyethyl chitosan layer is modified on the surface of a long afterglow nano particle to obtain a nano probe, and the probe has unique pH response charge conversion capability. The probe is used for polystyrene nano-plastic detection, the detection limit is low, and the linear range is wide.

A kind of multiplication type photoelectric detector based on organic-perovskite quantum dot active layer and preparation method thereof belong to organic photoelectric device technical field.It is successively composed of ITO conductive glass anode, poly (2, 3-dihydrothiophene and-1, 4-dioxane) hole transport layer, organic-perovskite quantum dot active layer and aluminum metal cathode.The application proposes the strategy of introducing CsPbBr3 perovskite quantum dot into P3HT organic material, quantum dot can effectively be used as electron trap in organic material, photo-generated electron of organic electron donor material under illumination is captured by quantum dot electron trap, the electron density captured by trap at the interface of active layer and cathode increases, resulting in band bending downward, barrier width decreases.At the same time, as P-type material, a large number of holes produced by P3HT under illumination are difficult to be captured by quantum dot electron trap, and a large number of holes pass through the barrier with reduced width to form multiplication current under the action of external electric field due to tunneling effect.