78 results about "Electron trapping" patented technology

The invention discloses a sewage treatment method based on ultrasonic enhanced photocatalysis cooperating with microorganisms, a Mn-TiO2 / Fe2O3 composite photocatalyst is created for the first time, meanwhile, a heterojunction structure of Fe2O3 and TiO2 can promote directed migration of photo-induced electron-hole pairs, Mn doping serves as an electron trap to further inhibit recombination, the carrier separation efficiency is improved, and the photocatalytic activity is improved. Therefore, the generation amount of active oxygen is greatly increased, and an easily degradable substrate is provided for microbial metabolism. An ultrasonic technology is introduced into a sewage treatment system of Mn-TiO2 / Fe2O3 photocatalysis and microorganisms in a breakthrough manner, so that the effective contact area of florae and pollutants / intermediate products is increased, and the decomposition capability of the microorganisms on the pollutants is enhanced; sewage treatment is carried out by innovatively adopting a three-effect synergistic effect of ultrasonic cavitation, photocatalytic oxidation and microbial metabolism; the pseudomonas is subjected to ultrasonic domestication, so that the pseudomonas has ultrasonic resistance, the normal metabolism and degradation capability of microorganisms in an ultrasonic environment is ensured, and efficient sewage treatment is performed according to the microorganisms required by wastewater culture of different pollutants.

The invention provides a semiconductor device and a preparation method thereof, a chip and electronic equipment, relates to the technical field of semiconductors, and aims to solve a reverse bias problem and / or a dynamic resistance problem caused by a bulk electron trap or an interface state trap. The semiconductor device includes a substrate, an epitaxial layer, a barrier layer, a gate, a cap layer, a source, a drain, and a functional layer. An epitaxial layer and a barrier layer are stacked on the substrate, and the barrier layer is farther from the substrate than the epitaxial layer. The grid electrode is located on the side, away from the substrate, of the barrier layer. The cap layer is located between the barrier layer and the gate. The source electrode and the drain electrode are located on the side, away from the substrate, of the barrier layer and located on the two opposite sides of the grid electrode respectively. And the functional layer is positioned on one side, far away from the substrate, of the barrier layer. The functional layer and the drain electrode are located on the same side of the grid electrode, and the functional layer is connected with the drain electrode. And the thickness of the functional layer is smaller than that of the cap layer.

A direct converter for an axisymmetric mirror confinement system provides a set of radially symmetric vanes charged to capture ions escaping along the axis of the confinement system and to convert their energy to electrical power. An electron trap positioned before the charged vanes uses a magnetic field to divert and collect electrons, separating them from the ions, and may support a radial electric field providing plasma control. The charged vanes may be constructed of or have a coating of a getter material absorbing neutrals derived from those ions after capture.

The invention relates to the technical field of photocatalysts, in particular to a bismuth-defect bismuth oxybromide-sulfur-defect bismuth sulfide bromide heterojunction and a preparation method and application thereof in photocatalytic CO2 reduction, Bi (NO3) 3.5 H2O, thiourea, cetyltrimethylammonium bromide (CTAB) and the like are used as raw materials, and the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction is prepared through a two-step hydrothermal method. According to the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction, bismuth vacancies and sulfur vacancies are introduced, the visible light absorption range of the material is expanded through a proper amount of double vacancies, more electron capture centers are provided, and the separation efficiency of photo-induced electrons and the vacancies is improved, so that the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction has excellent performance of photocatalytic reduction of CO2, and the preparation method of the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction is suitable for large-scale production and application of the VBi-Bi4O5Br2 / VS-Bi19Br3S27 heterojunction. CO2 can be reduced into a single product CO, and the photoreduction efficiency of the carbon dioxide can be improved.

A thin-film transistor to be used in an X-ray sensor includes a gate electrode, a semiconductor layer, and a gate insulating layer located between the semiconductor layer and the gate electrode. The gate insulating layer includes a first region having an interface with the gate electrode, a second region having an interface with the semiconductor layer, and a third region located between the first region and the second region. Each of the first region and the second region has a density of electron trap states and a density of hole trap states that are higher than whichever of a density of electron trap states and a density of hole trap states of the third region that is lower.

The invention discloses a nitride light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductor devices. The nitride light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an N-type layer, a combination layer, an electron blocking layer and a P-type layer which are sequentially stacked on the substrate, the combined layer comprises an electron trap layer and a polarization layer which are sequentially stacked and grown from bottom to top; the electron trap layer comprises a Mg-doped ScGaN layer and a BGaN layer which are sequentially, periodically and alternately grown from bottom to top; the polarization layer comprises an N-surface polar quantum well layer, an N-surface polar quantum barrier layer, a Ga-surface polar AlGaN layer and an N-surface polar Si-doped InAlGaN layer which are sequentially, periodically and alternately grown from bottom to top. According to the nitride light-emitting diode epitaxial wafer, the effective recombination efficiency of holes and electrons can be improved, electron overflow can be reduced, the stark efficiency of multiple quantum wells can be reduced, the light-emitting efficiency of a GaN-based LED chip can be improved, and the problem that the light-emitting efficiency of a current GaN-based LED is low is solved.

The invention belongs to the field of photoelectric devices, and discloses a method for improving the performance of a wide bandgap perovskite heterojunction ultraviolet photoelectric synapse device, the ultraviolet photoelectric synapse device realizes an ultraviolet photoelectric nerve synapse function through a heterojunction formed by a PEDOT: PSS hole transport layer and a wide bandgap perovskite PEA2PbCl4 film, B3PyMPM is doped in the PEA2PbCl4 film as an electron capture site, and the performance of the wide bandgap perovskite heterojunction ultraviolet photoelectric synapse device is improved. The electron trapping capability is enhanced, and the performance of the ultraviolet photoelectric synapse device can be improved. The method is simple in process, expensive instruments and equipment are avoided, and the device preparation cost is reduced.

Provided is a semiconductor device including a substrate, a stacked structure including a plurality of gate electrodes and a plurality of interlayer insulating layers, and a plurality of channel structures penetrating the stacked structure. Each of the plurality of channel structures includes a channel poly layer, a crystalline layer including hafnium (Hf) or zirconium (Zr), an electron trap layer, and a plurality of gate insulating layers positioned between the electron trap layer and the plurality of gate electrodes at a height corresponding to the plurality of gate electrodes. The crystalline layer includes a plurality of ferroelectric layers positioned at a height corresponding to the plurality of gate electrodes, and a plurality of paraelectric layers positioned at a height corresponding to the plurality of interlayer insulating layers. The plurality of ferroelectric layers and the plurality of paraelectric layers have different crystal structures while containing the same material.

This invention discloses a deep defluorination agent and its application method, specifically relating to the field of defluorination agents (GMS-FS series products). It includes a valence-state switching active phase, a reaction interface building component, a dynamic electronic regulation component, and a structure adjustment and protection component. The valence-state switching active phase provides a reversible valence-state transition reaction center, achieving specific capture of fluoride ions through an electron trapping effect when interacting with them. The reaction interface building component forms a polar gradient interface layer on the surface of the defluorination agent, guiding fluoride ions to migrate towards the active center and locally enrich them, thereby improving defluorination efficiency. By constructing a rare metal valence-state switching active phase with La2O3 and UO2 as its core, combined with a polar gradient interface guiding layer and a dynamic electronic regulation mechanism, preferential migration and specific capture of fluoride ions are induced in a multi-ion coexistence environment, achieving stable deep defluorination under high salinity and highly competitive ion conditions.

The present invention discloses a small molecule floating gate type organic field effect transistor memory based on fluorenone derivatives and a preparation method thereof. The memory includes a substrate, a gate electrode, a gate electrode insulating layer, a charge trapping layer, a semiconductor layer, and source-drain electrodes which are sequentially arranged from bottom to top. The electron trapping layer is composed of a floating gate layer made of a small molecule of fluorenone derivative and a tunneling layer and a charge blocking layer made of a high dielectric constant polymer. The field effect transistor memory of the present invention uses a small molecule material with a simple structure as the floating gate layer, realizes bipolar storage performance, has stable device performance, high tolerance, large storage density, adopts a simple processing technology, can be prepared in a large area, is suitable for the preparation of flexible devices, reduces the production cost of the device, and is conducive to the popularization and application of organic field effect transistor memories.

The application belongs to the technical field of chemical looping combustion, and discloses a nano oxygen carrier particle, a photo reactor and a chemical looping system. The nano oxygen carrier particle comprises a metal oxide, a noble metal / rare earth metal and a semiconductor material. The metal oxide has oxidizing property. The semiconductor material generates photo-generated holes and photo-generated electrons under light irradiation. The photo-generated holes have oxidizing property, and the photo-generated electrons have reducing property. The noble metal serves as a catalytic site and forms a Schottky barrier with the semiconductor. The Schottky barrier continuously captures the photo-generated electrons to improve the separation efficiency of the photo-generated electron-photo-generated hole pair. The application further discloses a photo reactor and a chemical reaction chain using the nano oxygen carrier. Through the application, the multifunctional nano oxygen carrier particle with lattice oxygen transfer, photocatalysis and thermal catalysis is synthesized, the operation temperature of the chemical looping system is below 200 DEG C, the low-temperature chemical looping combustion process is realized, and the sintering and agglomeration of the oxygen carrier material are avoided.

A direct converter for an axisymmetric mirror confinement system comprises a set of radially symmetric vanes that are charged to trap ions escaping along the axis of the confinement system and convert their energy into electrical power. An electron trap located in front of the charged vanes uses a magnetic field to guide and collect the electrons and separate them from the ions. The electron trap is capable of supporting a radial electric field that controls the plasma. The charged vanes may be made of or have a coating of a getter material that absorbs neutrals from the trapped ions.

The embodiment of the invention discloses a storage method of a field effect transistor, a readable storage medium and a storage system, and the storage method comprises the steps: firstly applying a positive or negative pulse to a grid electrode of a ferroelectric polarization auxiliary charge trapping field effect transistor, so as to enable the field effect transistor to be in an electron trapping state or a hole trapping state; and writing information in an electron capture state or a hole capture state. On the basis of the application, the situation that a large number of electrons or holes are injected and captured in the pulse process of the grid electrode of the field effect transistor, so that the read threshold voltage drifts is considered, the threshold voltage difference value generated by capturing of the electrons or the holes is used as a storage window, information storage is realized, and the reading efficiency is improved. The memory function is realized by utilizing the phenomenon that electrons or holes induced by ferroelectricity are captured and the part of electrons or holes can be retained in a gate medium for a certain time, and a single-transistor DRAM (Dynamic Random Access Memory) memory device with the size of 4F2 is realized.

The invention provides aramid precipitation nanofiber reinforced aramid paper as well as a preparation method and application thereof, and belongs to the technical field of aramid insulation paper. The meta-aramid precipitation nanofibers are adopted to prepare the fiber coating, a compact protection layer is formed on the surface of the aramid paper after coating, pores in the surface of the aramid paper are filled, the overall structure of the aramid paper is densified, the concentration of electron traps is increased, electron breakdown paths are reduced, and compared with para-aramid precipitation nanofibers, the surface of the aramid paper is more compact. In the preparation process, water is used as a solvent, no organic solvent is contained, the aramid paper is safe, environmentally friendly, green and non-toxic, the aramid fibers cannot be damaged, and various properties of the aramid paper are further improved.

The invention relates to the technical field of photocatalysis, in particular to a Yb < 3 + > / Er < 3 + > co-doped full-spectrum response Ti-MOF / BiOBr S type heterojunction as well as a preparation method and application thereof. The invention provides an S-type heterojunction composite catalyst, which is mainly prepared from squaric acid, a titanium source, Yb < 3 + > and Er < 3 + > doped BiOBr nanosheets, and the mass ratio of the BiOBr nanosheets in the catalyst is 60%-95%. The high specific surface area of the IEF-11 is beneficial to pollutant enrichment, and the addition of the nanosheet can expand the photoresponse range and can be used as an electron trapping agent, so that the sunlight utilization rate and the photocatalytic performance are improved; the constructed S-type heterojunction can promote separation of photon-generated carriers, and meanwhile, the strong oxidation-reduction capacity of a composite system is reserved. The catalyst has the capabilities of full-spectrum response, efficient degradation of organic pollutants and inactivation of microorganisms, and has a wide application prospect.

The invention relates to the field of cable insulating materials, in particular to a double-layer network heat-conducting composite insulating material for cables and a preparation method thereof.The material comprises an inner heat-conducting layer, a transition layer and an outer insulating layer, and in the inner layer, a three-dimensional heat-conducting network is built through a vertically-oriented boron nitride nanotube and reduced graphene oxide-boron nitride nanosheet heterostructure; flexible polymer brush grafted nanoparticles are introduced into the transition layer, so that thermal mismatch is relieved; and the outer layer is cooperated with GO-QDs by coating Al2O3 with a temperature response polymer, so that high-temperature interface self-enhancement and electron trap effects are realized, and the breakdown strength is greater than or equal to 45kV / mm. The material disclosed by the invention has the performance retention rate gt after being aged at 180 DEG C and 35 kV for 1000 hours; and meanwhile, the thermal resistance is reduced by more than or equal to 75%, the tensile strength is improved by more than or equal to 50%, the service life is remarkably prolonged, and the insulating material can be widely applied to insulation of electric automobiles and ultrahigh-voltage cables.

The invention relates to the technical field of photocatalytic materials, in particular to a covalent organic framework material as well as a preparation method and application thereof. The covalent organic framework material has a repeating unit with a structure as shown in a formula I. A covalent organic framework material based on a benzothiadiazole (BT) core is modified through an electron donating group-OCH3, a non-uniform p-pi conjugated system is further constructed through the synergistic effect of-F and-OCH3, the electronic structure of the COF material is accurately regulated and controlled, a built-in electric field is enhanced, exciton binding energy is reduced, and the shallow trap life is prolonged; according to the preparation method, the formation of deep electron traps and charge recombination are effectively inhibited, the photocatalytic performance is improved, a novel material with enhanced performance is provided for repairing a radioactive pollution environment, and uranium (VI) reduction can be efficiently catalyzed under an illumination condition.

The invention provides a method for adjusting the threshold voltage of an MOS transistor, and the method comprises the steps: providing a substrate which comprises a first channel, a second channel, a first oxidation layer and a second oxidation layer, the first oxidation layer covers the surface of the first channel, and the second oxidation layer covers the surface of the second channel; performing first particle irradiation on the first oxide layer, and forming a plurality of electron traps in the first oxide layer; performing second particle irradiation on the second oxide layer, and forming a plurality of hole traps in the second oxide layer; and performing electromagnetic wave irradiation on the substrate, so that electrons in the substrate are transitioned and captured by the electron trap, and holes in the substrate are transitioned and captured by the hole trap. The method can be used for optimizing and adjusting the threshold voltage of the MOS transistor.

The application discloses a nitride light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductor devices. The nitride light-emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type layer, a combination layer, an electron blocking layer and a P-type layer which are sequentially stacked on the substrate; the combination layer comprises an electron trap layer and a polarization layer which are sequentially grown from bottom to top; the electron trap layer comprises Mg-doped ScGaN layers and BGaN layers which are periodically and alternately grown from bottom to top; and the polarization layer comprises N-face polar quantum well layers, N-face polar quantum barrier layers, Ga-face polar AlGaN layers and N-face polar Si-doped InAlGaN layers which are periodically and alternately grown from bottom to top. The nitride light-emitting diode epitaxial wafer can increase the effective recombination efficiency of holes and electrons, reduce electron overflow and reduce the Stark efficiency of multiple quantum wells, thereby improving the light-emitting efficiency of a GaN-based LED chip, and solving the problem of low light-emitting efficiency of a current GaN-based LED.

The invention discloses an electron trap type covalent triazine framework nanosheet as well as a preparation method and application thereof, and belongs to the technical field of preparation of covalent organic framework materials. The electron trap type covalent triazine framework nanosheet is synthesized by adopting terephthalonitrile and bis (trimethylsilyl) lithium amide to synthesize a monomer 1, adopting p-bromobenzaldehyde, ethylene glycol, p-toluenesulfonic acid monohydrate, magnesium powder and phosphorus trichloride to synthesize a monomer 2, and then adopting the monomer 1, the monomer 2 and terephthalaldehyde to synthesize the electron trap type covalent triazine framework nanosheet. A non-planar triphenylphosphine oxide structural unit with a strong electron withdrawing effect is introduced in the polymerization process of a traditional CTFs material, the visible light catalytic hydrogen production activity of the electron trap type covalent triazine framework nanosheet is remarkably improved, the catalytic hydrogen production rate can reach 15988 mu mol / h / g and is 4.8 times that of a pure unmodified covalent triazine framework material, and the catalytic hydrogen production efficiency is greatly improved. And the bottom-to-top synthesis strategy is also beneficial to the development and research of large-scale production of the material.

According to the preparation method disclosed by the invention, ammonium tungstate, Bi (NO3) 35H2O and NaBr are used as precursors, and the oxygen-enriched BiOBr / WO3 heterojunction photocatalyst with the photochromic effect is prepared by adopting a one-step hydrothermal method. The preparation method comprises the following steps: firstly, dissolving mannitol and hexadecyl trimethyl ammonium bromide in water, and then sequentially adding Bi (NO3) 3.5 H2O, a certain amount of ammonium tungstate ((NH4) 10H (W2O7) 6.xH2O) and an aqueous solution containing a bromine source; and carrying out hydrothermal reaction on the obtained mixed solution, and then washing and drying to prepare the BiOBr / WO3 ultrathin nanosheet. The prepared BiOBr / WO3 heterojunction ultrathin nanosheet with the photochromic effect can be used for photocatalytic oxidation reaction of ethylbenzene at normal temperature and pressure under visible light irradiation, and the excellent photocatalytic performance of the BiOBr / WO3 heterojunction ultrathin nanosheet is derived from the synergistic effect of a heterojunction structure and photochromism. On one hand, due to the construction of the heterojunction, the visible light absorption range is widened, the transportation distance of charges is shortened, and favorable conditions are provided for photocatalytic reaction; on the other hand, the photochromic effect induced W < 6 + > / W < 5 + > species can be used as an electron capture center to capture and store photogenerated electrons, so that the separation and transfer efficiency of photogenerated charges is effectively improved.

The invention discloses a deep fluorine removal agent and an application method, and particularly relates to the field of fluorine removal agents (GMS-FS series products), the deep fluorine removal agent comprises a valence state switching active phase, a reaction interface construction component, a dynamic electronic regulation component and a structure adjustment and protection component; the valence state switching active phase is used for providing a reversible valence state conversion reaction center, and specific capture of fluorine ions is realized through an electron trap effect when the valence state switching active phase acts with the fluorine ions; the reaction interface construction component is used for forming a polar gradient interface layer on the surface of the fluorine removal agent, guiding fluorine ions to migrate to an active center and be locally enriched, and improving the fluorine removal efficiency. A rare metal valence state switching active phase with La2O3 and UO2 as cores is constructed, a polarity gradient interface guide layer and a dynamic electronic regulation and control mechanism are matched, fluorine ions are induced to preferentially migrate and specifically capture in a multi-ion coexistence environment, and stable and deep fluorine removal under the conditions of high salinity and strong competitive ions is achieved.

The invention discloses a lithium-doped crystalline silicon photovoltaic cell, a silicon wafer, a crystal ingot and a doping method thereof, and belongs to the field of photovoltaic cells. A proper amount of impurity lithium and impurity boron are combined and doped to form p-type first lithium silicon, the electronegativity of the lithium element is only 0.98, when space high-energy irradiation is not encountered, doped lithium saturates holes of part of boron atoms, and when space high-energy irradiation is encountered, on one hand, outer layer electrons of lithium are easily attracted by an electron trap, and on the other hand, the outer layer electrons of lithium are easily attracted by an electron trap; passivation of electron traps and'release 'of boron atom holes are objectively formed, and as a result, multi-sub-holes of the p-type silicon material are increased, and the conductivity is increased instead of being reduced; on the other hand, due to the fact that positive lithium ions accompany the electron trap, the probability that the electron trap captures a photo-generated minority carrier hole is greatly reduced, and the photoelectric conversion efficiency of the space battery can be improved.

The invention discloses an OV-Fe3O4 / bamboo charcoal composite photocatalyst rich in oxygen vacancies, a preparation method of the OV-Fe3O4 / bamboo charcoal composite photocatalyst and application of the OV-Fe3O4 / bamboo charcoal composite photocatalyst in photodegradation of orlistat. According to the OV-Fe3O4 / bamboo charcoal composite photocatalyst rich in the oxygen vacancies, the oxygen vacancies can serve as electron traps, photo-induced electrons are rapidly captured, the service life of current carriers is prolonged, and the charge utilization efficiency is improved. SEM, XRD and FT-IR prove that a semiconductor-carbon material heterojunction is formed between OV-Fe3O4 rich in oxygen vacancies and bamboo charcoal, which is beneficial to the cooperation of the oxygen vacancies and the high specific surface area and pore structure of the bamboo charcoal, improves the catalytic efficiency of adsorption-enrichment-photodegradation of pollutants, and is especially suitable for low-concentration orlistat wastewater treatment. In addition, due to the structural design, the oxygen vacancy activity of OV-Fe3O4, the adsorption enrichment capacity of bamboo charcoal and the magnetic separation performance form a collaborative closed loop, and a material basis with high efficiency and practicability is provided for large-scale photocatalytic water treatment.

A thin-film light-emitting device and a preparation method therefor, and a display panel, relating to the technical field of display. The thin-film light-emitting device comprises an anode, a hole transport layer, a light-emitting layer, and a cathode which are sequentially stacked. The hole transport layer comprises a hole transport material and an electron trap material, and the LUMO energy level of the electron trap material is less than the LUMO energy level of the hole transport material. The thin-film light-emitting device can improve the stability of the hole transport layer.

The application discloses an array substrate, a display panel and a preparation method of the array substrate. The method comprises the following steps: sequentially forming a gate electrode and a gate insulating layer on a substrate; forming an active region on the gate insulating layer, wherein the active region is made of an oxide semiconductor material, and the active region is doped with an electron trapping element as a positive center; forming a source / drain electrode on the active region, and forming an insulating protective layer on the source / drain electrode. The application provides an array substrate, a display panel and a preparation method of the array substrate, which have better light stability and better performance.

The invention relates to the field of organic semiconductor nanoparticle ink, and particularly discloses organic semiconductor nanoparticle ink, a preparation method thereof and an electronic device. The preparation method comprises the following steps: dissolving an organic semiconductor material in an organic solvent to prepare an organic semiconductor solution; the preparation method comprises the following steps: dissolving poloxamer in deionized water to prepare a poloxamer aqueous solution; dispersing the organic semiconductor solution in the poloxamer aqueous solution, and volatilizing the organic solvent; carrying out cooling treatment on the solution after the organic solvent is volatilized; and carrying out centrifugal filtration treatment on the cooled solution to obtain the organic semiconductor nanoparticle ink. The invention aims to reduce electron traps on the organic semiconductor film, realize effective transmission of charges, and further improve the performance of the organic electronic device.

The present invention provides a mixed phase TiO2 nanomaterial, which uses anatase phase TiO2 nanobelt as a carrier and is loaded with TiO2(B) nanosheets. The lower bandgap width of TiO2(B) allows the material to absorb part of the visible light, and the defects distributed on its surface can participate in the photocatalytic reaction as electron traps. When the mixed phase structure is excited by light, photogenerated electrons and holes can migrate between the two crystal phases. The introduction of TiO2(B) nanosheets greatly increases the surface area of ​​the material. When the photogenerated carriers migrate to the surface of the material, they can quickly react with organic molecules in the system, thereby improving the photocatalytic reaction rate while effectively avoiding the recombination of the photogenerated carriers, ensuring that the photocatalytic reaction is stable at a high level for a long time. Furthermore, by loading the TiO2(B) nanosheets on the anatase phase TiO2 nanobelts, the dispersion of the TiO2(B) nanosheets in the aqueous solution can be improved, agglomeration can be avoided, and the photocatalytic efficiency can be improved.

The invention discloses environment-friendly transformer insulating oil, which is prepared from the following raw materials in percentage by mass: 50 to 70 percent of non-edible algae oil base; 1%-5% of a light response self-repairing microcapsule; 3%-8% of an electron trapping agent; 2%-5% of a heat conduction reinforcing agent; 12%-44% of a lipid carrier; the invention relates to the technical field of insulating materials. According to the environment-friendly transformer insulating oil, spirulina and chlorella are taken as raw materials, so that the environment-friendly transformer insulating oil does not compete with food crops, negative carbon emission is realized, the environment-friendly transformer insulating oil has good biodegradability, the environment-friendly transformer insulating oil is matched with an electron trapping agent to form an electron trap, the partial discharge intensity is reduced, the oxidation induction period is prolonged, the breakdown voltage threshold value is increased, and the service life of the transformer is prolonged. The heat conduction reinforcing agent is used for constructing a difunctional network, the electron mobility is reduced, meanwhile, a heat conduction path is formed, the heat conduction coefficient is increased, the heat resistance is reduced, the light response self-repairing microcapsule is arranged in a matched mode and fractures during partial discharge, support is provided for microcrack repairing of the insulation paper, and the insulation paper has the advantage of being diversified in function.

The invention provides a thin film light-emitting device, a preparation method thereof and a display panel, and belongs to the technical field of display. The thin film light-emitting device comprises an anode, a hole transport layer, a light-emitting layer and a cathode which are sequentially stacked, wherein the hole transport layer comprises a hole transport material and an electron trap material; the LUMO energy level of the electron trap material is smaller than the LUMO energy level of the hole transport material. The thin film light-emitting device can improve the stability of the hole transport layer.