The invention belongs to the technical field of microelectronic storage, and particularly relates to a preparation and heterogeneous bonding method for a three-dimensional
metal /
isolation layer stacked structure in a ferroelectric
single crystal material. According to the invention, a multilayer
electrode material /
isolation layer structure is alternately formed by adopting processes of photoetching, deep groove
etching,
electrode material deposition, chemical mechanical
polishing,
isolation layer filling and the like, and a three-dimensional cross array is directly constructed in a ferroelectric
single crystal, so that the problems of charge transverse
diffusion crosstalk in 3D NAND and complexity of a
capacitor structure in 3D
DRAM are solved; and the
thermal expansion difference with the substrate material is reduced, and high-precision and high-yield heterogeneous bonding of the ferroelectric storage
wafer and the
peripheral memory read-write circuit
wafer is realized. According to the invention, three-dimensional stacking of up to 1000
layers of storage units is realized, and the storage density can reach 4F2 / N; the process compatibility is high, the heterogeneous bonding alignment precision is high, the switch ratio of the storage unit is greater than 104, the
data retention time is greater than 10 years, and the read-write speed is lt; and the high speed of a
DRAM (
Dynamic Random Access Memory) and the non-volatility of a Flash are integrated.