120 results about "Electron storage" patented technology

The present invention is a system for handling liquid and a method for the same. The system has a container capable of holding a liquid. An electronic storage device is coupled with the container for electronically storing information relating to the liquid stored in the container. The system also has an antenna, for storing information to and reading information from the electronic storage device. Finally, the system has a microprocessor-based controller, coupled with the antenna, for controlling processing of the liquid based on information read from the electronic storage device by the antenna.

The invention provides a method of forming an electron memory storage device and the resulting device. The device comprises a gate structure which, in form, comprises a first gate insulating layer formed over a semiconductor substrate, a self-forming electron trapping layer of noble metal nano-crystals formed over the first gate insulating layer, a second gate insulating layer formed over the electron trapping layer, a gate electrode formed over the second gate insulating layer, and source and drain regions formed on opposite sides of the gate structure.

A system for automatically filling a reservoir. The system includes a first mechanism that automatically determines one or more parameters associated with the reservoir. A second mechanism fills the reservoir with an appropriate amount and type of filler based on the one or more parameters. In a specific embodiment, the one or more parameters include filler type and current filler level information. The parameters also include an identification number associated with a user of the reservoir. Upon filling of the reservoir, a billing system automatically bills or charges a user based on the identification number and filler level information obtained via the first mechanism. The billing system includes a database that maintains billing information associated with the identification number. The billing system further includes a network connection that facilitates communications with the database. A control panel and accompanying user-interface software enables a user to edit the identification number and / or to edit a charge number associated with the identification number. A reservoir sensor measures the current filler level in the reservoir and provides the filler level information in response thereto. A dispensing container accommodates the reservoir and transfers filler from the dispensing container to the reservoir in response to a signal from the first mechanism. A container level sensor senses current filler levels in the container and provides container filler level information to a remote monitoring system via a network in response thereto. In a more specific embodiment, the reservoir is a printer cartridge, and the filler is printing consumable, such as toner. The first mechanism includes an electronic storage device attached to the printer cartridge that communicates with the reservoir sensor and maintains the parameters describing the reservoir.

Techniques for optimizing data movement in electronic storage devices are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for optimizing data movement in electronic storage devices comprising maintaining, on the electronic storage device, a data structure associating virtual memory addresses with physical memory addresses. Information can be provided regarding the data structure to a host which is in communication with the electronic storage device. Commands can be received from the host to modify the data structure on the electronic storage device, and the data structure can be modified in response to the received command.

A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.

In a method for manufacturing a single electron memory device including a single electron storage element in a gate lamination pattern formed on a nano-scale channel region of a MOSFET, formation of the gate lamination pattern includes sequentially forming a lower layer and a single electron storage medium for storing a single electron tunneling through the lower layer on a substrate, forming an upper layer including a plurality of quantum dots on the single electron storage medium, forming a gate electrode layer on the upper layer to be in contact with the plurality of quantum dots, and patterning the lower layer, the single electron storage medium, the upper layer, and the gate electrode layer, in reverse order.

A system for detecting and evading vehicle identification means (VIM), comprising: locating means, control means having a plurality of I / O channels, each adapted to receive or transmit serial or parallel data, processing means, electronic storage means comprising at least one database of known VIM coordinates and identification prevention device (IPD) adapted to automatically prevent identification of the vehicle's license plate number, owner, driver or any part or passenger of the vehicle.

The invention discloses an AlGaN based deep-UV LED epitaxial structure with a function of improving light output. The epitaxial structure comprises a substrate, a non-doped AlGaN buffer layer, a dopedN type AlGaN layer, an AlxGa(1-x)N / AlyGa(1-y)N MQW (multi-quantum well) active area, an insert layer, a P type doped electron blocking layer, a P type AlGaN layer and a P type GaN cap layer from bottom to top in sequence. According to the epitaxial structure, a barrier layer of a luminous layer of the MQW active area of the AlGaN based deep-UV LED epitaxial structure is designed to realize sawtooth gradual change of Al component and contain peaks and trenches, electron storage function of the active area is enhanced, electron overflowing can be reduced, and light output power of a deep-UV LEDdevice is improved.

The present invention is a system for handling liquid and a method for the same. The system has a container capable of holding a liquid. An electronic storage device is coupled with the container for electronically storing information relating to the liquid stored in the container. The system also has an antenna, for storing information to and reading information from the electronic storage device. Finally, the system has a microprocessor-based controller, coupled with the antenna, for controlling processing of the liquid based on information read from the electronic storage device by the antenna.

The invention aims to develop a polyacid-based metal organic framework crystal material with an intercalation structure, which effectively overcomes the technical bottlenecks that a simple polyacid material is wide in band gap (3 eV), can only absorb ultraviolet light, is soluble in water, and has a recover rate, and the like. Special intercalation structure characteristics of the material are utilized to improve the electron storage capacity of polyacid as an electron acceptor, accelerate the separation of catalytic photo-generated carriers, enhance the photocatalytic efficiency of a catalyst, and expand the spectral absorption range to visible light. The chemical formula of the polyacid-based metal organic framework crystal material with the intercalation structure is designed and developed as [CuI2CuII5(ptz)6(OH)2(4H2O)GeW12O40].6H2O. A method for preparing the material comprises the following steps: dissolving germanium tungstate, copper chloride and 5-(pyridine-2-yl)tetrazole organic ligand into deionized water to obtain a reaction solution, adjusting a pH value, and then reacting at a temperature of 160 DEG C for 3 days. . The metal organic framework crystal material with thepolyacid-based intercalation structure having visible light catalytic properties can be obtained.

A laser energy microinscribing system, comprising a semiconductor excited Q-switched solid state laser energy source; a cut gemstone mounting system, allowing optical access to a mounted workpiece; an optical system for focusing laser energy from the laser energy source onto a cut gemstone; a displaceable stage for moving said gemstone mounting system with respect to said optical system so that said focused laser energy is presented to desired positions on said gemstone, having a control input; an imaging system for viewing the gemstone from a plurality of vantage points; and a rigid frame supporting said laser, said optical system and said stage in fixed relation, to resist differential movements of said laser, said optical system and said stage and increase immunity to vibrational misalignments. The laser energy source is preferably a semiconductor diode excited Q-switched Nd:YLF laser with a harmonic converter having an output of about 530 nm. The system may further comprise an input for receiving marking instructions; a processor for controlling said displaceable stage based on said marking instructions and said imaging system, to selectively generate a marking based on said instructions and a predetermined program; and a storage system for electronically storing information relating to images of a plurality of workpieces. A secure certificate of authenticity of a marked workpiece is also provided.

The invention provides a split-grid type metal-oxide-semiconductor field effect transistor (MOSFET) imaging detector and an operating method thereof. The split-grid type MOSFET is structurally characterized in that two insulating medium layers and a control grid are arranged above a P-type substrate; a photoelectron storage layer is arranged between the two insulating medium layers; selection grids are arranged on two sides of the control grid; a substrate controlled by the control grid is separated from the source and drain of a probe; the insulating medium layer on the top of the substrate contacted with the control grid is a material for preventing the loss of electric charge stored in the photoelectron storage layer to the control grid; and a transparent or semitransparent window of the probe length of the probe is arranged at one of the surfaces of the substrate layer or the control grid. By utilizing the split-grid type MOSFET imaging detector, the collection efficiency of the photoelectron is effectively improved; the dark current of the probe is inhibited; and the detector is not sensitive to process defects, wide in dynamic range and high accuracy in signal reading.

In an electron accelerator such as an electron storage ring, a linac or an energy-recovery linac, accelerated electron bunches are subjected to light-electron interaction to have a varying profile of electron density and the thus modulated electron bunches are passed between deflecting magnets or injected into an undulator to generate high-brightness, narrow-band orbital radiation, thereby enabling high-brightness, narrow-band orbital radiation to be utilized simultaneously on a plurality of beam lines.

A method of identifying logical information in a cell, particularly in a programming by hot hole injection nitride electron storage (PHINES) cell by one-side reading scheme is disclosed. The method comprise steps of: erasing the first region and the second region of PHINES cell by increasing a local threshold voltage (Vt) to a certain value; programming at least one of the first region and the second region of the PHINES cell by hot hole injection; and reading a logical state of the PHINES cell by measuring an output current of one of the first region and the second region; wherein different quantity of the output current is caused by interaction between different quantity of the hot hole stored in the first region and the second region, so as to determine the logical state of the PHINES cell by one-side reading scheme.

A separator includes a substrate layer and a porous surface layer that is provided on at least one major surface of the substrate layer and contains a first particle, a second particle, and a resin material. The surface layer includes a first region configured by the first particle and a second region configured by the second particle and the resin material.

The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.

The invention relates to a method and a device for destroying electronic storage medium. The method comprises the following steps: the electronic storage medium is arranged in an electric heating plasma energy collection furnace to carry out high temperature melting and decomposition treatment; and flue gas generated by the treatment is in suspended substances and harmful gas purification by adopting an electrostatic filter device and a plasma low temperature filter device. The method and the device for destroying electronic storage medium can realize safe and complete destroying without generating harmful substances, can carry out complete heat destroying treatment on secret-related electronic storage medium without hidden dangers left by destroying residues of an information carrier to ensure that information can not be recovered forever, and can avoid generation of various harmful gases in a great deal of destroying waste gas. The device for destroying electronic storage medium is safe, reliable, stable and environmental, has high efficiency, saves the energy, is simple to operate and install and is easy to maintain.

A system and method for calibrating an X-ray tube is provided in which the X-ray tube includes an electronic storage medium associated with the X-ray tube on which calibration information for the X-ray tube is stored. The calibration information includes operating parameters for the focusing elements of the X-ray tube for desired focal spots, tolerance limits for variations in the focal spots and a number of gradient coefficient values corresponding to certain modulation transfer functions (MTF) for the X-ray tube that the imaging system can employ in an iterative manner to correct the operating parameters of the focusing elements to achieve the desired focal spot. This automatic iterative process significantly reduces the time required for the calibration of the X-ray tube. The system and method also employs scan sequencing to minimize the heat generated enabling the scans to be completed in a shorter amount of time than prior calibration processes.

The invention provides a ZnO-based photocatalytic composite material and a preparation method thereof. The ZnO-based photocatalytic composite material is based on carbon quantum dots (CQDs), has excellent electron storage capacity and up-conversion fluorescence performance, and can form water-soluble protection on the surface of the material so as to avoid agglomeration of zinc oxide nanostructures during preparation; ZnO has excellent electron transport property; after a CQDs aqueous solution is used for post-treatment of the product, a stable CQDs protection and fluorescence conversion layeris formed on the surface of ZnO, the carrier separation and transmission of the composite material can be better improved during a photocatalytic reaction, and the recombination rate of a carrier isreduced after separation; furthermore, the pi-pi interaction between a conjugated structure of the CQDs and benzene is beneficial to the enrichment of the benzene on the surface of the composite material; the CQDs and the benzene can efficiently degrade organic gas pollutants under visible light due to a synergistic effect (the degradation efficiency of the benzene can reach 90%).

A high power extreme ultraviolet (EUV) beam is produced. An electron beam is injected in a compact electron storage ring configured for emission of free-electron laser (FEL) radiation. The electron beam is passed through a magnetic undulator on each of a plurality of successive revolutions of the electron beam around the compact electron storage ring. The electron beam is induced to microbunch and radiate coherently while passing through the magnetic undulator. A portion of the free-electron laser radiation at an extreme ultraviolet wavelength produced by an interaction of the electron beam through the magnetic undulator is outputted.

The invention relates to a novel Mo-To monocrystal oxide nanometer material, a preparation thereof and an application. In the nanometer material, Mo ion is replaced and mixed in a crystal lattice of TiO2, and thus an interface-free monocrystal composite oxide structure is formed; the mole ratio of Mo and Ti ions is 0.05-0.5. The novel Mo-To monocrystal oxide nanometer material has the near-infrared plasma resonance absorption property, photo-induced electron storage property, and is able to degrade pollutant at a dark place.

The present invention provides a semiconductor device which includes a gate electrode shaped in the form of an approximately quadrangular prism, including a laminated body of a gate oxide layer, a gate polysilicon layer and a gate silicon nitride layer provided in a first conduction type substrate, a second conduction type implantation region provided in a region outside the gate electrode, a sidewall that exposes a top face of the gate electrode and is formed by laminating a sidewall mask oxide layer covering side surfaces, an electron storage nitride layer and a sidewall silicon oxide layer, and a source / drain diffusion layer provided in the first conduction type substrate exposed from the gate electrode and the sidewall.

An electronic storage device for connecting with a host system in accordance with the present invention includes a cover having a body section and a protection section bending from one end of the body section, and a main body having an electrical connector with an interface and defining a receiving space. The body section forms a positioning section of polygonal shape at the other end of the cover. The main body includes at least one cooperating portion disposed in the receiving space and having a flat cooperating surface. The body section of the cover covers the main body with the protection section covering the interface of the electrical connector to protect the interface. The positioning section is received in the receiving space of the main body and the main body is capable of rotating relative to the cover with the at least one cooperating portion rotating along the polygonal edge of the positioning section and being compressed by the positioning section to produce deformation.