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AlGaN based deep-UV LED epitaxial structure with function of improving light output

An epitaxial structure, deep ultraviolet technology, applied in the field of ultraviolet LED, can solve the problems of high growth difficulty of A1 component, affecting luminous efficiency, low output light power, etc., to achieve the effect of reducing electron leakage, enhancing luminous efficiency and increasing electron concentration

Active Publication Date: 2018-06-29
迪优未来科技(清远)有限公司
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Problems solved by technology

[0003] Compared with traditional ultraviolet LEDs, deep ultraviolet light-emitting diodes (DUV Light Emitting Diode, DUV-LEDs) are more difficult to grow due to their higher A1 components, and piezoelectric polarization in the multi-quantum well region due to lattice mismatch And the spontaneous polarization effect leads to energy band bending, so that serious electron leakage occurs, which affects its luminous efficiency, resulting in relatively low output light power. In view of this, how to improve the electron overflow problem in the active region of deep ultraviolet LED , and enhance its carrier storage capacity

Method used

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  • AlGaN based deep-UV LED epitaxial structure with function of improving light output
  • AlGaN based deep-UV LED epitaxial structure with function of improving light output

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[0024] In order to make the purpose of the present invention, technical solutions and advantages more clearly and completely described, the present invention will be further described in detail below in conjunction with the examples. Obviously, the examples described below are some examples of the present invention, but the present invention claims The scope is not limited to the specific examples below.

[0025] Such as figure 1 As shown, the present invention uses sapphire as a growth substrate for heterogeneous epitaxial growth, and uses MOCVD (metal organic chemical vapor deposition) technology to complete the entire epitaxial process. The LED epitaxial structure is sequentially provided with a sapphire substrate layer 1 from bottom to top, undoped Al 0.5 Ga 0.5 N-buffer layer 2, N-type doped Al 0.5 Ga 0.5 N layer 3, Al x Ga 1-x N / Al y Ga 1- yN multi-quantum well active region 4, superlattice insertion layer 5, P-type doped electron blocking layer 6, P-type AlGaN ...

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Abstract

The invention discloses an AlGaN based deep-UV LED epitaxial structure with a function of improving light output. The epitaxial structure comprises a substrate, a non-doped AlGaN buffer layer, a dopedN type AlGaN layer, an AlxGa(1-x)N / AlyGa(1-y)N MQW (multi-quantum well) active area, an insert layer, a P type doped electron blocking layer, a P type AlGaN layer and a P type GaN cap layer from bottom to top in sequence. According to the epitaxial structure, a barrier layer of a luminous layer of the MQW active area of the AlGaN based deep-UV LED epitaxial structure is designed to realize sawtooth gradual change of Al component and contain peaks and trenches, electron storage function of the active area is enhanced, electron overflowing can be reduced, and light output power of a deep-UV LEDdevice is improved.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet LEDs, in particular to an AlGaN-based deep ultraviolet LED epitaxial structure with improved light output. Background technique [0002] With the development of ultraviolet LED technology, AlGaN (aluminum gallium nitrogen)-based material deep ultraviolet LED is a new type of ultraviolet light source, which has small size, low energy consumption, long life, environmental protection and non-toxicity, especially in the The 200-380nm deep ultraviolet LED has the characteristics that traditional light sources do not have and has attracted widespread attention. It has a wide range of applications in biological disinfection, ultraviolet curing, passport verification, etc., and has a broad market prospect. [0003] Compared with traditional ultraviolet LEDs, deep ultraviolet light-emitting diodes (DUV Light Emitting Diode, DUV-LEDs) are more difficult to grow due to their higher A1 components, and pie...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32
CPCH01L33/06H01L33/32
Inventor 尹以安王敦年
Owner 迪优未来科技(清远)有限公司
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