100 results about "Gate current" patented technology

The invention discloses a superconducting rectifier, a superconducting diode and a manufacturing and control method thereof, and belongs to the technical field of superconducting electronics, the superconducting rectifier comprises more than one superconducting diode, the superconducting diode comprises an insulating substrate and a superconducting nanowire, the superconducting nanowire is provided with a narrowing section, and the narrowing section is provided with a narrow section. The narrowing section is connected with a first gate line and a second gate line, the first gate line and the second gate line are symmetrically arranged, and the first gate line and the second gate line are both perpendicular to the superconducting nanowire. According to the invention, in-situ reconfigurable reversal symmetry destruction can be realized through a nanoscale hot spot controlled by a grid electrode; electrically controlled opening or closing and polarity reversal are realized by adjusting a small grid current without changing a magnetic field; the superconductive rectifier realizes electrically reconfigurable full-wave and half-wave rectification, and paves a way for development of extensible and electrically programmable superconductive electronic devices.

Provided is a buffer circuit that can realize a wide dynamic range, a reduced area, and a reduced power consumption amount while maintaining low output impedance. The buffer circuit includes a first transistor, a current source, a second transistor, an output terminal, and first and second capacitors. The first transistor has a gate to which an input signal is input. The current source is connected to one terminal of the first transistor. The second transistor is connected to the other terminal of the first transistor. The output terminal is connected to the one terminal or the other terminal of the first transistor. The first and second capacitors are between the current source and the gate of the second transistor. The first transistor, the second transistor, and the first capacitor form a first feedback circuit. The first transistor, the current source, and the second capacitor form a second feedback circuit.

An electric circuit in which a first switching element and a first diode element are connected in antiparallel to form an upper arm and a second semiconductor element and a second diode element are connected in antiparallel to form a lower arm, and the upper arm and the lower arm are connected in series. A gate current path in one of the upper and lower arms and a reverse recovery path in the other one of the upper and lower arms are disposed close enough and extend at least partially in parallel to each other, so as to generate mutual inductance by the reverse recovery current flowing through the reverse recovery path and the gate current flowing through the gate current path.

The invention discloses a continuous time current comparator capable of outputting maximum current and minimum current. The continuous time current comparator comprises eight groups of cascode current mirrors consisting of NMOS (N-channel Metal Oxide Semiconductor) transistors N1-N20 and PMOS (P-channel Metal Oxide Semiconductor) transistors P1-P8, the drain electrode of the PMOS tube P2 is connected with the drain electrode of the NMOS tube N5 and the drain electrode of the NMOS tube N7 at the same time, the drain electrode of the PMOS tube P6 is connected with the drain electrode of the NMOS tube N11 and the drain electrode of the NMOS tube N13 at the same time, and the drain electrode of the PMOS tube P8 is connected with the drain electrode of the NMOS tube N17; a to-be-compared current Ia is input from the drain electrode of the NMOS transistor N1, and a to-be-compared current Ib is input and then is divided into two paths which respectively flow to the drain electrode of the NMOS transistor N3 and the drain electrode of the NMOS transistor N9; the drain electrode of the NMOS tube N19 outputs the maximum current Imax, and the drain electrode of the NMOS tube N15 outputs the minimum current Imin. After currents Ia and Ib to be compared are input, the maximum current Imax and the minimum current Imin corresponding to the currents Ia and Ib are output through current copying, summation and difference operation of the cascode current mirror, and the maximum current Imax and the minimum current Imin are both continuous analog current signals.

A control circuit for a current source converter having a current generator comprising an inductance and having two or more half bridges, each half bridge having an upper leg provided with upper switching devices and a lower leg provided with lower switching devices, the upper leg switching devices and the lower leg switching devices being controlled by a controller to provide overlap between upper leg off switching devices and upper leg on switching devices and to provide overlap between lower leg on switching devices and lower leg off switching devices by gate pull-up and pull-down pulse signals input to gate driver buffers of the switching devices, characterized in that the gate driver circuit comprises: - a gate current mirror circuit for each upper leg switching device and each lower leg switching device, the gate current mirror circuit providing a gate pull-down signal on a source branch of the gate driver buffer of the switching device when the switching device is off, the gate pull-down signal being connected to a control line of a gate buffer of a respective other upper leg switching device or other lower leg switching device, - a positive gate command connection path from a positive gate command output of a pre-driver for each upper leg switching device and each lower leg switching device, the positive gate command connection path providing a reset signal for the gate pull-down signal of the respective other upper leg switching device or respective other lower leg switching device.

Embodiments of the present invention related to a neuromimetic circuit including a transmitter circuit to receive the threshold signal from a superconducting optoelectronic neuron and convert the small current pulse to a voltage pulse sufficient to produce light from a semiconductor diode. This light is the signal used to communicate between neurons in the network. The transmitter circuit in accordance with the present invention includes an amplifier chain that comprises two Josephson junctions, a superconducting thin-film current-gated current amplifier, and a superconducting thin-film current-gated voltage amplifier. The transmitter circuit in accordance with the present invention enable an amplification sequence that allows neuronal firing of about 20 MHz with power density sufficiently low to be cooled with standard 4He cryogenic systems operating at 4.2 K.

The invention discloses a test structure for positioning a plasma damage source. A test substructure corresponding to a selected metal layer comprises a first MOS transistor, a first gate lead, a first antenna and a monitoring gate liner. The first gate lead is composed of metal wires of a selected metal layer. The first antenna is connected with the first gate lead. The first gate lead is connected with the first gate conductive material layer of the first MOS transistor. The first antenna, the first gate lead and the first gate conductive material layer form a first path for accumulating plasma charges to the surface of the first gate dielectric layer, and the first antenna is used for increasing absorption of the plasma charges and amplifying damage. The monitoring gate pad is connected with the first gate lead and is used for testing the gate current of the first MOS transistor, and the gate current is used for monitoring the damage amount of the first gate dielectric layer caused by the graphical etching plasma charge of the selected metal layer. The invention also discloses a test method for positioning the plasma damage source. The plasma damage source can be positioned.

This solves the problem that arises when turning off high-side or low-side transistors. [Solution] The first output sensor 280 controls the output voltage V of the output stage 110. OUT The first threshold voltage V TH1 When the value drops to a certain level, the first output detection signal VOUTDET1 is asserted. When the output stage 110 is in current source mode, the control circuit 210 responds to the instruction to turn off the high-side transistor MH by causing the high-side driver 220 to sink the high-side gate current I from the gate of the high-side transistor MH. HG_OFF The first current I1 is set. The control circuit 210 responds to the assertion of the first output detection signal VOUTDET1 by setting the high-side gate current I HG_OFF Set the current to a second current I2, which is less than the first current I1.

The invention discloses a method for establishing a GaN HEMT device gate model based on electric leakage matching, and the method comprises the steps: analyzing a gate structure of a GaN HEMT device, and establishing a corresponding gate equivalent circuit model which is formed by the sequential series connection of a first voltage dividing structure D1, a voltage dividing resistor R1 and a second voltage dividing structure D2 in the device gate structure; obtaining a voltage division relation in the gate equivalent circuit model based on electric leakage matching, constructing an iterative algorithm for calculating channel charges Qch, and solving the channel charges Qch through iterative calculation; and acquiring data of gate current of the GaN HEMT device under different gate voltage conditions, and performing parameter extraction on the gate equivalent circuit model. Model construction is carried out on the GaN HEMT device, calling of designers is facilitated, and the cost and time of integrated circuit design are greatly saved.

This invention provides a method for obtaining breakdown voltage, a computer-readable storage medium, and a terminal. The method includes: providing a flash memory device, the flash memory device including word lines, control gates located on both sides of the word lines, and a dielectric layer between the two; applying a first voltage to the control gates, and applying a second voltage to the word lines within a preset voltage range with a preset step size; measuring and obtaining the word line current and control gate current under each of the second voltages, wherein the word line current is the current flowing into the word line, and the control gate current is the current flowing out of the control gate; and obtaining the breakdown voltage of the dielectric layer based on the word line current and the control gate current; wherein the first voltage is less than 0V, and the second voltage is greater than or equal to 0V. This invention solves the problem of inaccurate breakdown voltage of the dielectric layer between the word lines and the control gates obtained by existing methods.

Semiconductor devices, systems and methods are described. A semiconductor device can include a driver configured to output a gate current to drive a power module. The semiconductor device can further include a buffer configured to buffer a reference voltage that is less than a supply voltage being provided to the driver. The semiconductor device can further include a controller configured to determine a gate voltage of the power module is equivalent to the reference voltage. The controller can, in response to determination that the gate voltage is equivalent to the reference voltage, disable the driver to cause the driver to stop providing the gate current to the power module and enable the buffer to supply the reference voltage to the power module.

The present application relates to the technical field of LED chip, and particularly relates to an epitaxial wafer of Mini LED with low GTO effect and a growth method thereof. The epitaxial wafer of Mini LED with low GTO effect comprises a buffer layer, a U-shaped GaN layer, an N-type GaN layer, a multi-quantum well active region layer and a P-type GaN layer which are sequentially grown on a substrate. The multi-quantum well active region layer comprises a defect inducing layer, a Si-doped AlGaN layer and a multi-quantum well light emitting layer which are sequentially grown on the N-type GaN layer. The epitaxial wafer of Mini LED avoids strong GTO effect and improves the brightness consistency of Mini LED by setting the defect inducing layer after the N-type GaN layer and setting the Si-doped AlGaN layer after the defect inducing layer.

The application relates to the technical field of amorphous soft magnetic material preparation, and discloses a cobalt-based amorphous soft magnetic alloy material, a preparation method thereof and application. a Fe b Mo c Si d B e C f M g In the formula, a, b, c, d, e, f and g respectively represent the atomic percentage content of corresponding components; wherein 50<=a<=70, 2<=b<=8, 0.5<=c<=5, 10<=d<=20, 10<=e<=20, 0.01<=f<=0.5, 0.1<=g<=5, and a+b+c+d+e+f+g=100; and M represents at least one of elements V, Cr, Mn and Nb. The cobalt-based amorphous soft magnetic alloy material provided by the application has low saturation magnetic induction intensity, low coercive force, high rectangular ratio and other superior soft magnetic properties, is good in corrosion resistance and easy to prepare; and a magnetic probe prepared from the alloy material has high precision in sensor testing, and has important significance for promoting the development of small high-precision magnetic flux gate current sensors.

The invention discloses an IGCT (integrated gate commutated thyristor) driving circuit. The circuit comprises an MOSFET driving circuit which comprises a pair of N-channel MOSFET and P-channel MOSFET which work complementarily and is used for providing forward gate current and reverse gate current for the IGCT device; the two gate resistors are used for adjusting the gate current of the IGCT device; the two acceleration capacitors are used for providing transient current at the conduction moment of the MOSFET driving circuit and adjusting the gate voltage rising speed of the IGCT device; the signal isolation module is used for transmitting an external control signal to a grid electrode of the MOSFET; and the power supply module is used for providing positive direct-current voltage for the N-channel MOSFET and providing negative direct-current voltage for the P-channel MOSFET. The technical problems that the switching frequency of the IGCT is limited and the power conversion efficiency is not high due to the fact that the gate current change rate is low and the switching speed is low in the high-frequency switching operation of the IGCT in the related technology are solved.

The utility model discloses a band-gap reference voltage circuit without an operational amplifier, which solves the problems that the structure and operation of the band-gap reference voltage circuit without the operational amplifier in the prior art are complicated, and the PSRR performance of output voltage in a high-frequency band is poor, and comprises a band-gap reference core circuit and a cascode current mirror circuit which are connected with each other, the band-gap reference core circuit and the cascode current mirror circuit are jointly connected with a starting circuit, and the band-gap reference core circuit is further connected with a driving circuit. According to the utility model, the circuit structure and the operation complexity are simplified, the parameters of each component do not need to be repeatedly adjusted, and the excellent PSRR performance of the output voltage in a high frequency band is realized.

The invention provides a fluxgate current sensor, and belongs to the technical field of current detection sensors. Comprising a front shell provided with a through first through hole; the rear shell is provided with a second through hole coaxial with the first through hole, and a hollow cavity is defined by the rear shell and the front shell; a connector male end is also arranged on one side, far away from the front shell, of the rear shell; the magnetic core unit is embedded in the cavity, surrounds the second through hole and is used for acquiring an excitation current signal of the current wire to be detected; the control circuit board is embedded in the cavity, is electrically connected with the magnetic core unit and is used for acquiring and outputting an excitation current signal of the magnetic core unit; wherein the first through hole or the second through hole is used for a to-be-detected current lead to radially pass through; the magnetic core unit only comprises one coil; the control circuit board further drives the magnetic core unit to generate an excitation magnetic field.

The invention provides a test circuit, a test method and a test system for gate leakage current of an MOS (Metal Oxide Semiconductor) tube. The test circuit comprises a band-gap reference voltage module, a high-resistance module, a leakage current detection module and a test voltage excitation module, and the output end of the band-gap reference voltage module is coupled with the first end of the high-resistance module. The second end of the high-resistance module, the output end of the test voltage excitation module and the leakage current detection module are coupled to a grid current test node used for being connected with the MOS tube to be tested. The band-gap reference voltage module provides a bias voltage with a first preset threshold value; the test voltage excitation module provides continuous scanning voltage; the leakage current detection module detects the test current of the current test node and obtains a leakage current detection result according to the bias voltage, the scanning voltage and the test current. According to the invention, the detection of the gate leakage current of the to-be-tested MOS transistor at the fA magnitude can be realized, and the charge stability of the gate node of the to-be-tested MOS transistor can be ensured, so that the consistency of batch testing can be ensured, and the reliability is high.

The application discloses a kind of shipborne localization IGBT module drive monitoring systems, specifically related to power electronic drive monitoring and smart grid control field, including: drive monitoring acquisition module is used to access the IGBT module drive board in shipborne smart grid, gate loop, power loop and auxiliary power supply loop, gathers drive control signal, gate voltage, gate current, collector voltage, emitter potential, desaturation detection signal and auxiliary power supply state, and output corresponding moment monitoring record;Diagnosis disturbance injection module is used to read the drive switching time in monitoring record, and under the condition that current power conversion task is not changed, diagnostic disturbance action is injected to gate loop. By injecting diagnostic disturbance action in the process of drive switching and generating drive response fingerprint, external working condition disturbance in on-load operation and drive chain intrinsic anomaly are separated and judged, so that the problem of coexistence of false protection shutdown and missed detection is relatively improved.

This disclosure relates to a current mirror circuit. In one embodiment, an electronic device includes: a first MOS transistor and a second MOS transistor connected as a current mirror, wherein the first transistor is diode-connected; and a first circuit configured to provide a first current equal to a first gate current of the first transistor multiplied by the size ratio of the first and second transistors.

The application discloses a maximum voltage automatic selection circuit and belongs to the technical field of analog integrated circuits.The maximum voltage automatic selection circuit comprises a bias circuit, a common-source common-gate current mirror circuit, a maximum voltage comparison circuit, a Schmitt trigger and a maximum voltage selection switch.The bias circuit is composed of a reference current generating circuit and a bias voltage generating circuit.The common-source common-gate current mirror circuit adopts a common-source common-gate structure.The maximum voltage comparison circuit converts an input voltage into corresponding current, and then automatically charges and discharges an energy storage capacitor according to the size of the current.The Schmitt trigger reshapes the result of the maximum voltage comparison circuit, and then drives the maximum voltage selection switch.The maximum voltage selection switch transmits the maximum voltage to an output end after being turned on.The application uses NMOS tubes to replace ordinary metal capacitors, so that the layout area of the circuit can be greatly reduced.The use of the current comparison mode and the Schmitt trigger not only increases the speed and precision of voltage comparison, but also improves the stability of the circuit.The currents generated by the reference current circuit and the mirror circuit are in the order of nano-ampere, so that the total power consumption of the whole circuit is extremely small.

The invention provides a voltage converter and a switching power supply, in the voltage converter, a first switching tube is arranged between an upper pole plate of a flying capacitor and a voltage input end, a second switching tube is arranged between a lower pole plate of the flying capacitor and a ground end, and the lower pole plate of the flying capacitor is connected with the ground end through an output capacitor; the current generation module is connected with a voltage input end and an upper pole plate of the flying capacitor. The current copying module is connected with the current generation module and a grid electrode of the second switch tube. The current generation module charges the flying capacitor based on the voltage input by the voltage input end; and the current copying module adjusts the grid voltage of the second switch tube based on the first charging current of the current generation module for charging the flying capacitor, so that the current flowing through the second switch tube is equal to the first charging current. According to the invention, when the flying capacitor is pre-charged, the output capacitor is prevented from being charged and discharged, so that the output voltage is kept unchanged, the number and the cost of circuit devices can be reduced, and the applicability is high.

The invention discloses a low-power-consumption wide-voltage band-gap reference circuit, and relates to the field of analog integrated circuits. The reference source mainly comprises a starting circuit and a reference voltage generating circuit. The reference voltage generation circuit adopts a cascode current mirror structure to remarkably improve the power supply rejection ratio, and linearly superposes transistor VBE voltage with a negative temperature coefficient and voltage with a positive temperature coefficient in an output branch, so that high-precision reference voltage is output in a wide power supply voltage range; the starting circuit adopts a closed-loop self-adaptive detection framework, and core bias nodes of the reference generation circuit are symmetrically monitored in real time through an internal detection tube. In a zero-current degenerate state of circuit power-on, the starting circuit is conducted, and starting current is forcibly injected into the core network; when the reference establishes a steady-state working point, the change of the potential of the internal node enables the detection tube to automatically enter a cut-off state, and the starting branch is thoroughly cut off. According to the invention, high-reliability starting in a wide-voltage environment is realized, and the starting module has the characteristic of zero static power consumption in a steady state, so that the design requirements of a low-power-consumption and high-precision system are met.

The utility model provides a coil rack assembly for a fluxgate current sensor, which comprises a coil rack and a circuit board, one end of the coil rack is provided with a mounting seat in an extending manner, the mounting seat is provided with a circuit board fixing structure, and the circuit board is fixedly arranged on the coil rack through the circuit board fixing structure and forms an integrated structure with the coil rack. The utility model further provides a fluxgate current sensor comprising the coil rack assembly, the problems caused by relative displacement of the circuit board and the coil rack are solved, the product stability is improved, meanwhile, the defects that the coil rack and the circuit board are placed in a shell to be fixed, and the operation space is limited are avoided, and the operation efficiency is improved. And a wider space can be provided for tin soldering operation, so that the welding operation is more convenient, and the production efficiency is improved.

This invention relates to the field of power electronics, specifically addressing an IGBT (Insulated Gate Bipolar Transistor) collector current online detection device and method based on gate current. The detection method involves processing the IGBT gate drive waveform using a Miller plateau detection module to extract the Miller plateau region in the gate drive waveform. The IGBT gate current integration module extracts the voltage across the IGBT gate drive resistor, integrates the voltage waveform during the Miller plateau period, and uses the integration result to characterize the gate current during the Miller plateau. Three sets of integrator output voltages and collector currents under different load currents are measured, and a second-order polynomial fitting is performed internally in the DSP (Digital Signal Processor) to derive a function representing the collector current as a function of the integrator output voltage.

The application relates to a multi-temperature coefficient bias system belonging to the technical field of high-voltage and high-output current power amplifier biasing. The application provides a multi-temperature coefficient bias system capable of improving the performance of an amplifier. The application comprises a band gap reference voltage source, a VI conversion circuit and a bias circuit, wherein the output end of the band gap reference voltage source is connected with the input end of the VI conversion circuit, reference current generated by the VI conversion circuit enters the bias circuit to generate a bias voltage; the band gap reference voltage source outputs a low-temperature coefficient reference voltage; the VI conversion circuit: through the virtual short characteristic of a high-gain single-stage operational amplifier under negative feedback state, the low-temperature coefficient reference voltage generates reference current with different temperature coefficients under different temperature coefficient resistors, and the stable reference current is output through a common-source and common-gate current mirror; the bias circuit: an improved low-voltage common-source and common-gate current mirror is used to generate the bias voltage required by the amplifier core.

A field effect emitter microstructure comprises: an emitter needle having a field effect emitter portion on a first end; a gate electrode with a gate opening connecting an underside of the gate electrode facing the emitter needle to an upper side of the gate electrode facing away from the underside, wherein a central axis of the emitter needle is perpendicular to the gate electrode toward the gate opening in the emitting direction; and a first insulating layer adjoining the emitter needle under the field effect emitter portion and at least partially adjoining the gate electrode underside. An emission voltage is applied to produce free electrons in the field effect emitter portion. The first end of the emitter needle has a protrusion greater than or equal to zero relative to the gate electrode upper side and / or the first insulating layer adjoins the inner wall of the gate opening.

This invention provides a method and apparatus for determining the collector-emitter voltage during the IGBT turn-off delay process. The method includes: determining the gate current expression based on a pre-established IGBT parasitic capacitance model using the gate-emitter capacitance current, gate-collector capacitance current, and gate-collector capacitance voltage; determining the gate-collector capacitance expression using the gate-collector capacitance voltage; obtaining the relationship between the collector-emitter voltage and the gate voltage and gate-collector capacitance voltage based on the gate current expression and the gate-collector capacitance expression; and solving the relationship to determine the expression for the change of the collector-emitter voltage over time. This invention, by determining the expression for the change of the collector-emitter voltage over time, enables the estimation of the collector-emitter voltage by observing the gate voltage and gate current of the IGBT device, achieving accurate and efficient monitoring of the collector-emitter voltage during the IGBT turn-off delay process, and providing a basis for IGBT turn-off process monitoring and analysis.

Method (1) for optimizing the switching losses and conduction losses and the short-circuit withstand capability of at least one power semiconductor (152.1, 152.2) and / or one power module in a logic switch, comprising a two-stage turn-on, a gate, a drain and a source, at least one gate driver providing multi-stage gate forming, wherein the method (1) comprises at least the following steps: a. Initiating (2) a predefined inrush current (54) of the gate by the gate driver, b. Performing (4) a first current injection (56) by injecting at least one first gate current (55), c. Performing (8) a second current injection (58) of a hold-gate current (80), during which a short-circuit detection (10) is performed and, if a short circuit is detected, a procedure step iv. is initiated, and, if no short circuit is detected, a procedure step v. and vi. is initiated. d. Switching off (13 of the power semiconductor and / or the power module, initiating a switch-off process (13) which includes a number of forming processes (60), e. Applying (14) a maximum gate current (78), and f. Performing (16) a third current injection (82) of a gate current.

The utility model provides a multipath sensor switching device and a detection system. The multipath sensor switching device comprises at least one first power supply, a plurality of fluxgate current sensors, at least one detection instrument and a plurality of switches, the first power supply is electrically connected with the fluxgate current sensor and supplies power to the fluxgate current sensor; the detection instrument is electrically connected with the fluxgate current sensor and measures the output quantity of the fluxgate current sensor; the switch is arranged to be connected among the fluxgate current sensors, the first power supply and the detection instrument, and controls the plurality of fluxgate current sensors to be switched according to a preset duration by controlling the state of the switch; or under the condition that the multi-path sensor switching device further comprises a second power supply, the second power supply is set to be electrically connected with the first power supply to supply power to the first power supply; and the switch is connected between the first power supply and the second power supply, and controls the plurality of fluxgate current sensors to switch according to a preset duration by controlling the state of the switch. Therefore, the interference superposition problem is reduced.

The invention discloses a multi-stage current feedback control high-power IGBT / MOSFET (Insulated Gate Bipolar Transistor / Metal-Oxide-Semiconductor Field Effect Transistor) driving circuit, and belongs to the technical field of The core innovation point is a multi-section grid current feedback control drive circuit, the circuit detects and suppresses electromagnetic interference and device stress by combining dv / dt and di / dt through collaborative design of a drive current source unit, a two-way feedback detection unit and a switch logic control unit, and the IGBT / MOSFET switching speed is adjusted to compromise and balance among switching loss, electromagnetic interference and device stress, so that the reliability of the IGBT / MOSFET switching speed is improved, and the reliability of the IGBT / MOSFET switching speed is improved. And the dynamic adjustment of the driving current in the turn-on / turn-off stage of rapid voltage buildup-slope control-full-speed turn-on of the IGBT / MOSFET is realized. Wherein 1 '1 is an IGBT / MOSFET power tube, 1' 2 is an Ic sampling circuit, 1 '3 is a Vce sampling circuit, 1' 4 is a logic control circuit, 1 '5 is a current source controlled by the driving chip, and 1' 6 is a current source of a second path controlled by the logic circuit.