Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.
1 results about "Double heterostructure" patented technology
Filter
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
A double heterostructure is formed when two semiconductor materials are grown into a "sandwich". One material (such as AlGaAs) is used for the outer layers (or cladding), and another of smaller band gap (such as GaAs) is used for the inner layer. In this example, there are two AlGaAs-GaAs junctions (or boundaries), one at each side of the inner layer. There must be two boundaries for the device to be a double heterostructure. If there was only one side of cladding material, the device would be a simple heterostructure.