Semiconductor laser and method for manufacturing same

A manufacturing method, semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve problems such as the inability to prevent sequential tapers, the difficulty in forming vertical ridge sides, and the difficulty in ensuring that the corrosion stop layer stops corrosion, etc. , to achieve high output
CN1467891AInactive Publication Date: 2004-01-14KK TOSHIBA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
KK TOSHIBA
Publication Date
2004-01-14
Estimated Expiration
Not applicable · inactive patent

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Abstract

A semiconductor laser includes a substrate, a double hetero structure portion formed on the substrate, the double hetero structure including a first clad layer formed on the substrate, an active layer formed on the first clad layer and a second clad layer formed on the active layer, the second clad layer having a stripe-form projection on an upper surface thereof, the projection having an upper portion whose sidewalls are substantially vertically formed on the surface of the substrate and a step-shaped lower portion whose line width is larger than that of the upper portion, and a current blocking layer formed extending from side surfaces of the projection to the upper surface of the second clad layer except an upper surface of the projection.
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Description

[0001] Cross References to Related Applications

[0002] This application is based on and claims the benefit of priority from Japanese Patent Application No. 2002-161814 filed on June 3, 2002, the entire contents of which are hereby incorporated by reference. technical field

[0003] The present invention relates to a semiconductor laser having a ridge-shaped current collecting portion, and more particularly to a semiconductor laser obtained by changing the shape and a method of manufacturing the same. Background technique

[0004] In recent years, a semiconductor laser having a ridge-shaped current collecting portion (ridge) in a double heterostructure has been developed as a light source with a short wavelength and high output. In this type of laser, it is important to tightly control the ridge width in order to obtain the target lasing characteristics. In particular, in a semiconductor laser used as a high-output light source for CD-R or DVD-R, it is required to reduce t...

Claims

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