296results about How to "Increase electron density" patented technology

A novel coordination complex formed by dinuclear metal complexation is provided. The complex is a dinuclear metal complex of a compound, wherein the compound comprises a conjugation ring system substituted with: a) an electron donating group selected from —OH, —SH and —NH₂; b) an indicating group selected from a chromogenic group, a fluorescent group and an electrochemical group; and c) two binding auxiliary groups, in combination with the electron donating group each of which being coordinated with the metal to provide an anion bonding site, wherein as the complex binds to a anion, the coordination of the electron donating group with the metal is weakened and electron donation of the electron donating group to the conjugation ring system is reinforced such that the reinforced electron donation by the electron donating group is transferred through the conjugation ring system to the indicating group to produce an indicating signal concomitant with the change of its electronic density. The coordination complex shows high sensitivity and high selectivity for pyrophosphate over other anions in an aqueous solvent over a wide pH range. Therefore, the complex is useful for pyrophosphate assay as a pyrophosphate sensor.

The invention provides an organic electroluminescent material and an organic electroluminescent device containing the material. The material has a structural formula shown in the description. The material provided by the invention is used as a hole transporting layer, a hole injecting layer or an electron blocking layer of the organic electroluminescent device, so that the organic electroluminescent device has a lower driving voltage, higher luminous efficiency, and a better service life.

The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin SiN layer on the top AlGaN layer, in the reactor where the growth takes place at high temperature, prior cooling down the structure and loading the sample out of the reactor, as well as a method to produce some HEMT transistors on those heterostructures, by depositing the contact on the surface without any removal of the SiN layer by MOCVD. The present invention recites also a device.

The subject invention pertains to electrochromic polymers and polymer electrochromic devices. In a specific embodiment, two complementary polymers can be matched and incorporated into dual polymer electrochromic devices. The anodically coloring polymers in accordance with the subject invention can allow control over the color, brightness, and environmental stability of an electrochromic window. In addition, high device contrast ratios, high transmittance changes, and high luminance changes can be achieved, along with half-second switching times for full color change. Also provided are electrochromic devices such as advertising signage, video monitors, stadium scoreboards, computers, announcement boards, warning systems for cell phones, warning/information systems for automobiles, greeting cards, electrochromic windows, billboards, electronic books, and electrical wiring. The subject invention also provides for the use of complementary electrochromic polymers in the manufacture of electrochromic devices. In some embodiments, the devices of the invention can be prepared using metal vapor deposition or line patterning.

We disclose an x-ray interferometric imaging system in which the x-ray source comprises a target having a plurality of structured coherent sub-sources of x-rays embedded in a thermally conducting substrate. The system additionally comprises a beam-splitting grating G₁ that establishes a Talbot interference pattern, which may be a π phase-shifting grating, and an x-ray detector to convert two-dimensional x-ray intensities into electronic signals. The system may also comprise a second analyzer grating G₂ that may be placed in front of the detector to form additional interference fringes, and a means to translate the second grating G₂ relative to the detector.

In some embodiments, the structures are microstructures with lateral dimensions measured on the order of microns, and with a thickness on the order of one half of the electron penetration depth within the substrate. In some embodiments, the structures are formed within a regular array.

The invention relates to an experimental apparatus for acquiring large-area uniform discharge plasmas, which belongs to the technical field of plasmas. The experimental apparatus comprises a bipolar nanosecond pulse power supply, a reactor, multi-needle-to-plate electrodes, a gas distribution system, a spectral measurement system and a discharge measurement system, wherein the bipolar nanosecond pulse power supply drives dielectric barrier discharge of air and other gas mixtures among the multi-needle-to-plate electrodes in the reactor, and the gas mixtures are input to the reactor through the gas distribution system; the spectral measurement system collects photonic information of plasma discharge in real time and inputs the photonic information to a computer for spectral analysis; and the discharge measurement system collects discharge voltage and current of the high-voltage nanosecond pulse power supply in real time, and the discharge voltage and current are displayed through a digital oscilloscope. By virtue of the bipolar nanosecond narrow-pulse power supply, the large-area discharge plasmas are generated without a magnetic field; and the generated plasmas are uniform, diffusive, high in electron density, high in energy utilization ratio, low in energy consumption and easy to control in a discharge process.

A chemically amplified positive resist composition contains as a base a carboxyl or phenolic hydroxyl group-containing resin soluble in aqueous alkaline solution, in which acid labile groups are incorporated into at least some of the hydrogen atoms on the carboxyl or phenolic hydroxyl groups so that the resin becomes insoluble or substantially insoluble in alkali, wherein the resin contains acid labile groups of at least two types, acid labile groups of one type are acetal or ketal groups, and acid labile groups of the other type are tertiary hydrocarbon groups or tertiary hydrocarbon group-containing substituents. The resist composition remains stable during vacuum standing after exposure to electron beams or soft x-rays, leaves minimal footings on chromium substrates, has an excellent sensitivity and resolution, and is thus suited as a micropatterning material for use in the processing of mask substrates.

An outdoor equipment cabinet includes a housing with an equipment compartment therein. An intake air vent and an exit air vent are formed in the housing. A fan is mounted within the housing for pulling air into the intake air vent, moving an air stream through the equipment compartment, and pushing air out of the exit air vent. A membrane is disposed adjacent the intake air vent. The membrane allows air to pass therethrough, but resists the passage of water and contaminants therethrough. In some embodiments, a baffling plate is disposed to direct the air stream within the equipment compartment, and/or the fan speed is controlled by a temperature sensor, and/or a clogging of the membrane is monitored and reported, and/or the intake air vent is located in a first door and the exit air vent is located in a second door of the cabinet.

A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

This disclosure presents systems for x-ray illumination that have an x-ray brightness several orders of magnitude greater than existing x-ray technologies. These may therefore useful for applications such as trace element detection or for micro-focus fluorescence analysis.

The higher brightness is achieved in part by using designs for x-ray targets that comprise a number of microstructures of one or more selected x-ray generating materials fabricated in close thermal contact with a substrate having high thermal conductivity. This allows for bombardment of the targets with higher electron density or higher energy electrons, which leads to greater x-ray flux.

The high brightness/high flux x-ray source may then be coupled to an x-ray optical system, which can collect and focus the high flux x-rays to spots that can be as small as one micron, leading to high flux density.

The present invention relates to a novel iridium complex into which carbazole-substituted pyridine derivatives and various substituents-substituted phenyl derivatives are introduced as main ligand and a electrophosphorescence diode containing the same as a dopant of a light-emitting layer. When the iridium complex according to the present invention is applied to an organic light-emitting diode, the heat-resistance property and the light-emitting property can be significantly improved as well as the light-emitting efficiency and the like can be significantly improved by doping the iridium complex compound into the light-emitting layer as compared to the conventional organic light-emitting diode.

An apparatus and method for controlling charged particles. The charged particles comprise electrons and positive ions. A magnetic field having only point cusps is used to confine energetic injected electrons and so to generate a negative potential well. Positive ions injected into or created within the negative potential well are trapped therein. The magnetic field is generated by current-carrying elements arranged at positions spaced from but closely adjacent and parallel to edges of a polyhedron which has an even number of faces surrounding each vertex or corner. The current-carrying elements are spaced apart at their corners (the vertices of the polyhedron) so as not to touch, and the containing structures for the current-carrying coils of the magnetic-field-providing system are conformal to the fields so produced. Preferably, the coils are placed on the outboard side of the confining coils so as to increases electron confinement.

A thruster (1) has a main chamber (6) defined within a tube (2). The tube has a longitudinal axis which defines an axis (4) of thrust; an injector (8) injects ionizable gas within the tube, at one end of the main chamber. An ionizer (124) is adapted to ionize the injected gas within the main chamber (6). A first magnetic field generator (12, 14) and an electromagnetic field generator (18) are adapted to generate a magnetized ponderomotive accelerating field downstream of said ionizer (124) along the direction of thrust on said axis (4),

The thruster (1) ionizes the gas, and subsequently accelerates both electrons and ions by the magnetized ponderomotive force.

It is an object to provide a method for manufacturing a display device suitable for mass production without complicating a manufacturing process of a thin film transistor. A microcrystalline semiconductor film is formed by use of a microwave plasma CVD apparatus with a frequency of greater than or equal to 1 GHz using silicon hydride or silicon halide as a source gas, and a thin film transistor using the microcrystalline semiconductor film and a display element connected to the thin film transistor are formed. Since plasma which is generated using microwaves with a frequency of greater than or equal to 1 GHz has high electron density, silicon hydride or silicon halide which is a source gas can be easily dissociated, so that mass productivity of the display device can be improved.

The present invention relates to a process of reducing sulfur- or nitrogen-containing compounds and also producing oxygenates, which can be used as an excellent octane booster in the reformulated gasoline and as a cetane booster for the future oxygenated diesel in a one-pot reaction.

Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an Al_xIn_1-xSb mixed crystal layer formed on a substrate, and an InAs_xSb_1-x (0<x≦1) thin film conducting layer directly formed on the Al_xIn_1-xSb layer, in which the Al_xIn_1-xSb mixed crystal layer is a layer that exhibits higher resistance than the InAs_xSb_1-x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAs_xSb_1-x thin film conducting layer, and the a lattice mismatch is +1.3% to −0.8%.

There is disclosed a method for preventing CCL4 (carbon tetracloride) induced liver damage comprising the prophylactic administration of extracts of Morinda citrifolia. The Morinda citrifolia may be administered in solid or liquid forms. Several regimens are disclosed including the administration of 2 ounces twice daily in a liquid form such as that sold by Morinda, Inc.

Systems for x-ray illumination that have an x-ray brightness several orders of magnitude greater than existing x-ray technologies. These may therefore useful for applications such as trace element detection or for micro-focus fluorescence analysis. The higher brightness is achieved in part by using designs for x-ray targets that comprise a number of microstructures of one or more selected x-ray generating materials fabricated in close thermal contact with a substrate having high thermal conductivity. This allows for bombardment of the targets with higher electron density or higher energy electrons, which leads to greater x-ray flux. The high brightness/high flux x-ray source may have a take-off angle from 0 to 105 mrad. and be coupled to an x-ray optical system that collects and focuses the high flux x-rays to spots that can be as small as one micron, leading to high flux density.

A laminated circuit board with electronic components buried therein comprises a substrate on which a land disposed on one main surface thereof is connected and fixed by solder to an integrated circuit (or the like). A sheet is laminated on the upper surface of the substrate. A filling portion by fluid resin is formed by clearance at the outer periphery of the integrated circuit (or the like). The sheet maintains its shape by woven or non-woven cloth having a hole in which the integrated circuit (or the like) is buried. The woven or non-woven cloth is impregnated with resin having heat fluidity and is thermally compressed. Thus, the electrical and mechanical connections between the laminated circuit board and electronic component can be enhanced in reliability.

A structure of a plasma CVD apparatus for forming a dense semiconductor film is provided. Further, a technique for forming a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains is provided. An electrode supplied with electric power for generating plasma is included in a reaction chamber of the plasma CVD apparatus. This electrode has a common plane on a surface opposite to a substrate, and the common plane is provided with depressed openings. Gas supply ports are provided on the bottom of the depressed openings or on the common plane of the electrode. The depressed openings are provided in isolation from one another.

A catalyst for promoting growth of carbon fiber, which is capable of growing satisfactorily at a low temperature without needing complex process and applicable to such as electron emitting device.

The catalyst used for growth of carbon fiber contains Pd and at least one element selected in the group consisting of Fe, Co, Ni, Y, Rh, Pt, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er and Lu, in which 20˜80 atm % (atomic percentage) of the selected at least one element is contained to Pd.