69results about How to "Improve confinement" patented technology

By providing a conductive capping layer for metal-based interconnect lines, an enhanced performance with respect to electromigration may be achieved. Moreover, a corresponding manufacturing technique is provided in which via openings may be reliably etched into the capping layer without exposing the underlying metal, such as copper-based material, thereby also providing enhanced electromigration performance, especially at the transitions between copper lines and vias.

In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, the line occupying ratio causing the maximum electromechanical coupling coefficient and the line occupying ratio causing the maximum reflection of the surface acoustic waves in the IDT are different from each other, the center of the IDT has the line occupying ratio causing an increase in electromechanical coupling coefficient in comparison with the edges of the IDT, and the edges of the IDT have the line occupying ratio causing an increase in reflection of the surface acoustic waves in comparison with the center of the IDT.

A medical device (100) for tissue welding is provided that comprises at least one processor (161) configured to regulate cold plasma production in a plasma head (102) by controlling an RF power source (141) to supply RF plasma-producing power to the plasma head.

Methods and apparatus for assaying biological materials employ multi-well substrates as described herein. The substrates include a plurality of wells, typically each of several nanoliters volume or smaller having consistent dimensions and formed in a rigid substrate such as a glass disk. Each well may be provided with a circumferential lip to minimize crosstalk between wells and / or facilitate optical location of the individual wells during interrogation. Samples are provided to the individual wells and assayed by an optical technique employing fluorescence, polarization, reflectance, or the like. A scanning laser system may be employed for this purpose. The substrate may rotate during the scan to allow consistent interrogation of the wells without stopping and starting the rotation. Multiple rotations may also be employed repeatedly interrogate the samples for use in a kinetic study, for example.

A thruster (1) has a main chamber (6) defined within a tube (2). The tube has a longitudinal axis which defines an axis (4) of thrust; an injector (8) injects ionizable gas within the tube, at one end of the main chamber. An ionizer (124) is adapted to ionize the injected gas within the main chamber (6). A first magnetic field generator (12, 14) and an electromagnetic field generator (18) are adapted to generate a magnetized ponderomotive accelerating field downstream of said ionizer (124) along the direction of thrust on said axis (4), The thruster (1) ionizes the gas, and subsequently accelerates both electrons and ions by the magnetized ponderomotive force.

An optical platform including optical bench, an optical or photonic coupling device and a photonic circuit. The photonic circuit includes a photonic crystal along a waveguide and / or defect. The coupling device may be a waveguide or impedance matching interconnection device. The optical bench includes a rectangular trench to seat an optical fiber and provide alignment with the photonic circuit.

Disclosed is a compression-based fastening device that is suitable for use with threaded fiberglass reinforced polymer (FRP) rod. FRP rod is often desirable due to certain favorable characteristics relative to metallic rods. Threaded FRP rod, however, has been somewhat unsatisfactory to date owing to the weakness of its thread structure. The herein disclosed device makes a threaded connection to a threaded FRP rod with an ultimate tensile strength that is several times greater than previously has been achieved with FRP rod, thereby effectively enabling FRP rod to be used in place of threaded steel rod. The preferred device includes a barrel with a tapered interior and a jaw assembly with a tapered exterior and internal threads. The jaw assembly's interior thread's engage the threaded FRP rod and the jaw assembly's tapered exterior slidably engages the barrel's tapered interior. As such, tightening the jaw assembly onto the threaded RFP rod also pulls the jaw assembly into the barrel's tapered interior so as to compress the jaw assembly against the threaded RFP rod and enhance the tensile strength of the threaded connection. Numerous embodiments are possible in terms of the configuration of the barrel, the jaw assembly, and the structure (e.g. an integral or separable nut) used to apply a tightening torque to the jaw assembly.

A lithographic projection apparatus is disclosed. The apparatus includes a radiation system that includes a radiation source and an illumination system that supplies a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, a projection system that projects the patterned beam onto a target portion of the substrate, an electrode, and a voltage source that applies an electric field between the radiation source and the electrode to generate a discharge between the radiation source and the electrode.

An electro-optic element includes a first waveguide, which is a plasmonic waveguide, including a first core having a ferroelectric material and a cladding having a first cladding portion. The first cladding portion includes, at a first interface with the ferroelectric material, a first cladding material. The electro-optic element includes a first and a second electrode for producing an electric field in the ferroelectric material when a voltage is applied between the first and second electrodes, for modulating a real part of a refractive index of the ferroelectric material. The element includes, in addition, a crystalline substrate on which the ferroelectric material is epitaxially grown with zero or one or more intermediate layers present between the substrate and the ferroelectric material. The element may have a second waveguide, which is a photonic waveguide, including for enabling evanescent coupling between the first and second waveguides.

A semiconductor structure having: a channel layer having a conductive channel therein; a pair of polarization generating layers; a spacer layer disposed between the pair of polarization generating layers. The polarization generating layers create polarization fields along a common, predetermined direction. Each one of the pair of polarizations layers may be InGaN; InAlGaN; or quaternary InxAlyGa1-x-yN and x is greater than or equal to y / 2. The polarization generating layers create polarization fields along a common, predetermined direction constructively increasing the total polarization fields experienced by the channel layer to increase confinement of carriers in the conductive channel.

A multilayer composite including a core made of a magnetic ceramic sintered compact disposed therein, and shrinkage restraining layers including an inorganic powder that is not substantially sintered at the sintering temperature of the green ceramic layers are sintered in order to reduce the difference in shrinkage behavior during firing between the core and the green ceramic layers.

An optical modulator is provided for modulating light propagating in a three-dimensional optical waveguide 5 by applying a voltage thereto. The optical modulator has the three-dimensional optical waveguide 5 including at least one pair of branch optical waveguides 5c and 5d, a multiplexing part 5e of the branch optical waveguides and an emission part 5f provided in the downstream of the multiplexing part, modulation electrodes 3A, 3B and 4 for applying a signal voltage for modulating light propagating in the three-dimensional optical waveguide 5, and guiding waveguides 6A and 6B for guiding primary mode light from the multiplexing part. Thickness of the substrate is 20 μm or less at least under the modulation electrodes, and an operation point of the optical modulator is controlled by changing, based on light output from the guiding waveguides, DC bias applied onto the modulation electrodes.

Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic field. The magnetic-field regulation means is formed of, for example, a permanent magnet, and is provided on the back side of each of the targets.

In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, the line occupying ratio causing the maximum electromechanical coupling coefficient and the line occupying ratio causing the maximum reflection of the surface acoustic waves in the IDT are different from each other, the center of the IDT has the line occupying ratio causing an increase in electromechanical coupling coefficient in comparison with the edges of the IDT, and the edges of the IDT have the line occupying ratio causing an increase in reflection of the surface acoustic waves in comparison with the center of the IDT.

Microelectronic photoacoustic detection device comprising:a substrate comprising cavities forming a Helmholtz differential acoustic resonator;acoustic detectors coupled to the chambers of the resonator;a light source;a waveguide comprising a first end coupled to the light source and a second end coupled to a first chamber;in which the second end comprises, at the interface with the first chamber, a width greater than that of the first end and that of the given wavelength, and / or in which the device comprises a diffraction grating arranged in the second end and capable of diffracting a first part of the beam towards a lower reflective layer arranged under the second end and a second part of the beam towards an upper reflective layer arranged at an upper wall of the first chamber.

A deflecting electromagnet has first and second magnetic poles that are opposed to each other via an inter-pole space through which an ion beam passes. The deflecting electromagnet further has: a pair of potential adjusting electrodes which are placed to sandwich a path of the ion beam in the same directions as the magnetic poles in the inter-pole space; and a DC potential adjusting power source which applies a positive voltage to the potential adjusting electrodes. The deflecting electromagnet further has a permanent-magnet group for, in the inter-pole space, forming a mirror magnetic field in which intensity is low in the vicinity of the middle in an ion beam passing direction, and intensities in locations which are respectively nearer to an inlet and an outlet are higher than the intensity in the vicinity of the middle.

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance and high electrostatic breakdown voltage. The Group III nitride semiconductor light-emitting device has a layered structure in which an n-type contact layer, an ESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer are deposited on a sapphire substrate. The ESD layer has a pit. The n-type cladding layer and the light-emitting layer are formed without burying the pit. The pit has a diameter of 110 nm to 150 nm at an interface between the n-type cladding layer and the light-emitting layer. The barrier layer of the light-emitting layer is formed of AlGaN having an Al composition ratio of 3% to 7%.

It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is FbM, and the frequency at an edge of the third region is FcN, the variations in frequency are in the ranges of 0.9815<FbM / Fa<0.9953 and 0.9815<FcN / Fa<0.9953, respectively.

The present invention provides semiconductor lasers having an Active-Photonic-Crystal (APC) structure that allows scaling of the coherent power by using a waveguide having a periodic structure that selects operation in a single spatial mode from large-aperture devices. The lasers include an active medium that includes an array of quantum box ministacks, each ministack containing 2 to 5 vertically stacked, coupled quantum boxes.

An optical platform including optical bench, an optical or photonic coupling device and a photonic circuit. The photonic circuit includes a photonic crystal along a waveguide and / or defect. The coupling device may be a waveguide or impedance matching interconnection device. The optical bench includes a rectangular trench to seat an optical fiber and provide alignment with the photonic circuit.

A deflecting electromagnet has first and second magnetic poles that are opposed to each other via an inter-pole space through which an ion beam passes. The deflecting electromagnet further has: a pair of potential adjusting electrodes which are placed to sandwich a path of the ion beam in the same directions as the magnetic poles in the inter-pole space; and a DC potential adjusting power source which applies a positive voltage to the potential adjusting electrodes. The deflecting electromagnet further has a permanent-magnet group for, in the inter-pole space, forming a mirror magnetic field in which intensity is low in the vicinity of the middle in an ion beam passing direction, and intensities in locations which are respectively nearer to an inlet and an outlet are higher than the intensity in the vicinity of the middle.

It is proposed an optical fiber including an optical core and an optical cladding surrounding the optical core. The optical core has a refractive graded-index profile with a minimal refractive index n1 and a maximal refractive index n0. The optical fiber has a numerical aperture NA and an optical core radius a satisfying a criterion C of quality of optical communications defined by the following equation:C=NA−0.02×a where:NA=√{square root over (n02−n12)}=n0·√{square root over (2Δ)} withΔ=n02-n122n02,Δ is the normalized refractive index difference.The minimal and maximal refractive indexes n1, n0 and the optical core radius a are chosen such that NA>0.20, a>10 μm and |C|<0.20.

It is intended to suppress the influence of a photorefractive phenomenon or the coupling of stray light to signal light. A Mach-Zehnder waveguide type optical modulator is provided which includes a thin plate 1 with a thickness of 20 μm or less formed of a material having an electro-optical effect, an optical waveguide 2 formed on a front surface or a rear surface of the thin plate, and a modulation electrode modulating light passing through the optical waveguide. The optical waveguide includes an input optical waveguide 21, branched optical waveguides 23 to 28, and an output optical waveguide 30. The branched optical waveguide includes an input branching portion (region B) in which the input optical waveguide is branched into a plurality of optical waveguides, an output merging portion (region D) in which the plurality of optical waveguides connected to the output optical waveguide are merged, and a parallel portion (region C) formed between the input branching portion and the output merging portion. At least one of the input branching portion and the output merging portion has a ratio l / d of a length l along a symmetry axis of the branched optical waveguides to a gap d of the optical waveguide in the parallel portion in the range of 33 to 100.

A stabilizer bar assembly has a stabilizer bar and a pair of bushing assemblies. Each bushing assembly has an elastomeric bushing disposed around the stabilizer bar and an outer metal member disposed around the elastomeric bushing. The elastomeric bushing has a molded in rate plate to increase the stiffness of the elastomeric bushing. The outer metal member compresses the elastomeric bushing between the stabilizer bar and the outer metal member to a prespecified percent of compression. When the stabilizer bar rotates with respect to the outer metal member, the compression of the elastomeric bushing stops movement between the elastomeric bushing and the stabilizer bar and between the elastomeric bushing and the outer metal member. A fastening strap is attached to the outer metal member to attach the stabilizer bar assembly to a vehicle.

A cask for loading at least one nuclear fuel assembly in a transport container, including a body with a longitudinal axis (X) capable of sealably covering an upper end of a container, at least one aperture (10) for letting through a fuel assembly, at least one means for connecting to pneumatic confinement means and at least one means (56) capable of maintaining a means (58) for sealing a chamber of the container inside the cask and at a distance from an entrance of said chamber during loading, wherein the maintaining means (56) includes a first arm (60) rotationally mobile around a first axis and a second arm (62) attached to the first arm (60) and rotationally mobile relatively to the first arm, said cask also including external means for controlling the arms (68,86), and wherein the second arm (62) includes a housing (76) for receiving the sealing means.

A detonator device and assembly for the initiating a plurality of signal transmission lines with a pressure impulse. The detonator device comprising a detonator casing having a signal receiving end and a firing end. The firing end of the detonator device being substantially shaped to conform with the pressure impulse initiation therein. The firing end having a contact wall of substantially uniform thickness for contacting a plurality of signal transmission lines in a compatible connector element and transmitting a pressure impulse thereto.

A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.

Quantum device comprising:a quantum component forming a qubit, formed in an active layer of a substrate and comprising:a confinement region;charge carrier reservoirs;a first front gate covering the confinement region;first lateral spacers arranged around the first gate and covering access regions;an FET transistor formed in the active layer, comprising channel, source and drain regions formed in the active layer, a second front gate covering the channel region, and second lateral spacers arranged around the second front gate and covering source and drain extension regions;and wherein a width of the first lateral spacers is greater than that of the second lateral spacers.

An optical functional device comprises a dielectric substrate 5, a ferroelectric thin layer 10 provided on the dielectric substrate 5 and comprising a material having electro-optical effect and an electrode 3A, 3B provided on the ferroelectric thin layer 10. A part of the ferroelectric thin layer 10 functions as a core 9 of the optical wave guide and the dielectric substrate functions as a clad for the optical waveguide. The optical waveguide 9 constitutes a multi-mode waveguide in the direction “D” of depth of the ferroelectric thin layer.