The invention discloses a preparation method of a single crystal film bulk acoustic resonator with an electrode provided with an annular groove and strip-shaped protrusions, and the method specifically comprises the following steps: sequentially depositing a stripping layer and a piezoelectric layer on a substrate, depositing a lower electrode on the piezoelectric layer, preparing an annular groove on the lower electrode, and depositing two strip-shaped protrusions and a sacrificial layer wrapping the two strip-shaped protrusions, depositing a protective layer wrapping the sacrificial layer on the piezoelectric layer, and depositing a to-be-bonded layer II wrapping the protective layer on the piezoelectric layer; then, bonding a to-be-bonded layer I and a to-be-bonded layer II on the substrate, removing the stripping layer and the substrate, depositing an upper electrode on the piezoelectric layer, preparing an annular groove on the upper electrode, and depositing two strip-shaped bulges on the upper electrode; finally, forming a through hole in the piezoelectric layer, wherein the bottom of the through hole is opened in the surface of the sacrificial layer, and the sacrificial layer is removed through the through hole to form a cavity. The lower ring groove, the first lower strip-shaped protrusion and the second lower strip-shaped protrusion are arranged on the lower electrode of the resonator, the upper ring groove, the first upper strip-shaped protrusion and the second upper strip-shaped protrusion are arranged on the upper electrode, and the frequency and the Q value of the resonator are improved.