590 results about "Irradiation laser" patented technology

A galvanometer mirror rotates in one direction when the galvanometer mirror is used. A spot can be scanned on an irradiated surface at a more constant speed by rotating the galvanometer mirror and by using the inertia. Moreover, it is preferable to make the galvanometer mirror heavy because the inertia becomes higher so that the spot is scanned at a more constant speed. In addition, in a polygon mirror of this invention, mirrors are arranged so as not to contact each other because a change time of the scanning position between the mirrors is provided. By moving the irradiated object with timing together when the laser light is not irradiated, the laser process can be performed efficiently.

The invention discloses a non-contact dynamic measuring device for a wheel diameter based on laser and a method thereof. The measuring device consists of a laser displacement sensor, a wheel positioning sensor or two laser displacement sensors; the two sensors are arranged along the direction of a steel rail. When the two laser displacement sensors are applied, light spots of irradiation laser can directly irradiate onto two opposite surfaces of the measured wheel; the two laser displacement sensors respectively and continuously measure the distance between each sensor and corresponding point on a tread of the wheel; the reading data of distance in each laser displacement sensor is recorded when the sum of the distance measured by the two laser displacement sensors is basically unchanged, to calculate the diameter of the train wheel. The invention requires two sensors at most, and measurement principle is simple and practical.

An aggregation of crystals extending long in the scanning direction (a long crystal grain region) is formed when a continuous wave laser oscillator (a CW laser oscillator) is employed for annealing the semiconductor film in the manufacturing process of a semiconductor device. The long crystal grain region has a characteristic similar to that of single crystal in the scanning direction, but there is restriction for high integration because of the small output of the CW laser oscillator. pa In order to solve the problem, a pulsed laser beam 1 having a wavelength absorbed sufficiently in the semiconductor film is used in combination with a laser beam 2 having a high output and having a wavelength absorbed sufficiently in the melted semiconductor film. After irradiating the laser beam 1 to melt the semiconductor widely, the laser beam 2 is irradiated to the melted region. And then the laser beam 2 and the semiconductor film are moved relatively while keeping the melting state so as to form the long crystal grain region. The laser beam 2 keeps to be irradiated to the semiconductor film until the laser beam 1 is irradiated, and the output of the laser beam 2 is attenuated when the laser beam 1 is irradiated so as not to give the energy more than is needed so that the very uniform laser annealing becomes possible. Thus the long crystal grain region having a width 10 times as broad as the conventional one can be formed.

In order to provide a laser irradiation system, a method for removing a coating, and a laser irradiation apparatus capable of efficiently removing a coating on a surface of a structure and recovering the removed substance using suction, a laser head (3) is configured from an optical system (4) for irradiating laser beam (30), a suctioning means (33) for suctioning removed matter (60) produced at the point where the laser beam (30) is directed, and an attachment (5) configured to be capable of abutting a surface (20) of a structure, the optical system (4) being operated to scan the irradiation point of the laser beam so as to draw a trajectory of a circle having a radius r1 around the optical axis of the laser beam (30) on a surface substantially perpendicular to the optical axis.

A mark having a length nT (n being an integer equal to or greater than 3 and T being a clock period) is formed by modulating irradiation laser power with three values of recording power Pw, erase power Pe, and bias power Pb (Pw>Pe>Pb). Constant strength periods (A_t) of the recording power Pw are set as A_tT, A₁T, . . . and A_mT and constant strength periods (B_t) of the bias power Pb are set as B_tT, B₁T, . . . B_mT, and CT (C=−1 to 3). The application of laser is divided into pulses in order of A_tT, B_tT, A₁T, B₁T, . . . , A_mT, B_mT, and CT (m=(n−k)/2, k=3 (if n is an odd number), or k=4 (if n is an even number)). (Here, the constant strength period of the recording power Pw for n=3, n=4, n≧5 (odd number), and n≧6 (even number) is set as A_t3, A_t4, A_tod, and A_tev, the constant strength period of the bias power Pb for n=3, n=4, n≧5 (odd number), and n≧6 (even number) is set as B_t3, B_t4, B_tod, and B_tev, and then, A_t3+B_t3=A_tod+B_tod=A_m+B_m=2T and A_t4+B_t4=A_tev+B_tev=3T).

A laser ray transmitting colored thermoplastic resin composition containing an anthrapyridone acid dye represented by formula (1) or (3); method of laser welding wherein a contact portion of a laser ray transmitting material of the laser ray transmitting colored thermoplastic resin composition and a laser absorbent material is welded by irradiating laser ray so that the laser ray transmits the laser ray transmitting material and is absorbed in the laser absorbent material with the laser ray transmitting material and the laser absorbent material in contact with each other.

A laser beam irradiating apparatus capable of achieving uniform annealing efficiently by employing a simple optical system using laser beams having attenuated regions is disclosed. It is possible to provide a method of irradiating a laser beam using the laser beam irradiating apparatus, and to provide a method of manufacturing a semiconductor device including the laser beam irradiating method in the fabrication sequence thereof.

The invention relates to the cold gas dynamic spray technology and the laser technology, in particular to a cold gas dynamic spray method comprising laser irradiation, wherein, compressed gas which carries with metallic powder impacts against the surface of a plaque at supersonic speed to form a circular spray spot on the surface of the plaque; meanwhile, an elliptic irradiation laser speckle is formed directly ahead of the circular spray spot through laser beam irradiation; moreover, the elliptic irradiation laser speckle and the circular spray spot are partly overlapped. The invention can substantially reduce the particle critical speed during cold gas dynamic spray and increases splicing efficiency and strength to ensure structural stability of spray particles, thereby improving coating performance.

The invention provides a method for measurement of thickness of a substrate and a processing device for the substrate, when thickness of the substrate is measured by interference of a laser, a stable measurement value is attainable and is not influenced by processing water. A cylindrical shield (74) is connectively arranged on an opening of a laser head portion (70), a wafer (1) is irradiated by the laser (L) from a laser irradiation end (71) on condition that an interior space (75) of the shield (74) is filled with the water 9W) supplied from a water supply pipe (76). The laser (L) irradiates the end (71) to irradiate the wafer (1). The laser (L) irradiates the wafer (1) by permeating through a glass plate (73) of the laser head portion (70) and the water (W) in the interior space (75), thickness of the wafer (1) is detected by means of an interference wave that is generated by reflective lights of a lower surface (surface (1a)) and a processing surface (back (1b)) of the wafer (1). Entry of the grinding water (the processing water) to a laser irradiation region is cut off to maintain the laser irradiation in a fixed state.

To provide a laser lap welding method including: performing lap welding (11; 21) by irradiating a laser beam (La) on a plurality of overlapped workpieces (1, 2); and irradiating, after a very short interruption time period of the laser beam irradiation, a defocused laser beam (Lc) on a terminating end (12; 22) of the lap welding. Preferably, the laser lap welding method including: interrupting the irradiation of the laser beam for a very short time period and moving, during the interruption time period, the optical axis of the laser beam from the terminating end of the lap welding to the side of the starting end of the lap welding; and irradiating a defocused laser beam from the position to which the optical axis of the laser beam is moved, to the terminating end of the lap welding.

The invention provides a laser processing device, which is capable of effectively collecting and discharging dust like debris generated by irradiating laser ray from a condenser to an object to be processed. The laser ray irradiation component comprises a laser ray oscillator, a condenser having a condensing lens for condensing laser rays, and a dust discharging component which is disposed at the end of the condenser near the downstream side of the laser ray irradiation direction. The dust discharging component comprises a dust collector, consisting of an upstream sidewall, a downstream sidewall and an outer sidewall. The upstream sidewall is provided with a first opening which enables the laser ray irradiated from the condenser to pass and acquire air obtain. The downstream sidewall is provided with a second opening which enables the laser ray irradiated through the first opening to pass and suck dust. The outer sidewall is connected to the upstream sidewall and the downstream sidewall, forming a dust collecting room. The outer sidewall is provided with an exhaust outlet enabling the dust collecting room and a suction source to commutate with each other. An outer air acquiring channel which enables the first opening to communicated with the outer air is disposed between the dust collector and the condenser.

It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the laser once to form a crystalline semiconductor film having a small crystal grain arranged in a grid pattern at a regular interval. In the present invention made in view of the above object, a ridge forms a grid pattern on a surface of the crystalline semiconductor film in such a way that a crystalline semiconductor film is formed by adding the metal element for promoting the crystallization to the amorphous semiconductor film and the pulsed laser whose polarization direction is controlled is irradiated thereto. As the means for controlling the polarization direction, a half-wave plate or a mirror is used.

The invention provides a laser processing method and laser processing equipment. The laser processing method comprises the steps as follows: radiating the laser through an incident surface of a material to be processed, and colleting the light on the initial cutting surface of or close to the material to be processed so as to gasify and/or melt the material to be processed at a light collecting point and/or in an area close to the light collecting point; forming an initial thermal removing area on the initial cutting surface; continuously distributing the initial thermal removing areas on the initial cutting face along a preset path so as to form an initial thermal removing line; irradiating the laser to collect the light on the surface of or close to the material to be processed formed in the thermal removing step so as to gasify and/or melt the material to be processed at the light collecting point and/or the area close to the light collecting point, thereby forming a follow-up thermal removing area; and continuously distributing the follow-up thermal removing areas along the preset path so as to form a follow-up thermal removing line.

A laser-transmissible resin composition for laser welding comprises 100 parts by weight of a thermoplastic resin, 0.01 to 3 parts by weight of titanium oxide that has density of at least 4 g/cm³ and an average particle size of 100 to 400 nm; and exhibiting whitish hue of white, gray or tint color. A method for laser welding comprises: piling a resin workpiece 2 being at least partly capable of the laser-absorption onto a laser-transmissible resin workpiece 1 that molded out of the laser-transmissible resin composition, irradiating a laser beam 3 thereto to weld thermally.

A shape measuring system includes a laser emitter that emits a laser beam, a scanner that scans the laser beam emitted by the laser emitter over a region in which an object is placed, a camera that detects reflected light of the laser beam, a recognizer that performs three-dimensional measurement of the object on the basis of the detection result of the camera, and a controller that performs control so as to change a scanning range of the scanner in accordance with the region in which the object is placed, the region being detected by the camera.