137results about How to "Improve annealing efficiency" patented technology

The invention discloses 700MPa-grade cold rolled steel plate with high weather resistance and a preparation method thereof. In the invention, a thin plate black continuous casting and continuous rolling flow is adopted. The refined molten steel mainly comprises the following chemical components: 0.03 to 0.07 weight percent of C, less than or equal to 0.35 weight percent of Si, 0.4 to 1.8 weight percent of Mn, less than or equal to 0.020 weight percent of P, less than or equal to 0.010 weight percent of S, 0.25 to 0.50 weight percent of Cu, 0.25 to 0.80 weight percent of Cr, 0.05 to 0.30 weight percent of Ni, 0.06 to 0.20 weight percent of Ti, and the balance of Fe and inevitable impurities. In an annealing process, steel is annealed in a cover annealing furnace at the temperature of 500 DEG C to an A1 transition point. The yield strength of the cold rolled steel plate with high weather resistance exceeds 700MPa, and the elongation rate is over 5 percent, and the cold rolled steel plate has high machinability and high weather resistance.

The invention discloses a pure-oxygen-atmosphere annealing device and method. According to the method, a material required for being annealed is loaded into quartz tubes, the quartz tubes are placed in an aluminum-oxide ceramic sleeve which is uniformly wound by nickel-chromium wires, oxygen of stable flow is introduced into the quartz tubes, the internal furnace temperature is uniformly and slowly increased, heat of a heater is transferred to crystals to be annealed in a radiation manner, and a temperature control instrument controls a heating-up rate, the degree of a constant temperature, the time for constant temperature and a cooling rate, so that the fully-automatic unattended annealing is realized, and the annealing temperature can reach 1,300 DEG C. The pure-oxygen-atmosphere annealing device and method disclosed by the invention are applicable to the pure-oxygen-atmosphere annealing of materials, such as laser crystals, scintillation crystals and the like, the annealing efficiency is high, and the light emitting efficiency of the laser and scintillation crystals can be increased by 20-40%; after annealing, the brightness, transparency, crystalline perfection and optical uniformity of the crystals can be greatly improved; and the pure-oxygen-atmosphere annealing device has the advantages of stable temperature field, simplicity and reliability, good universality and low energy consumption, so that the annealing cost is reduced.

The invention discloses a copper belt production technology for a new energy automobile connector, and belongs to the technical field of the copper plate belt production technology. The technology comprises the first step of cast ingot smelting, the second step of face milling, the third step of hot rolling, the fourth step of rough rolling, the fifth step of one-time annealing, the sixth step of one-time cleaning, the seventh step of intermediate rolling, the eighth step of two-time annealing, the ninth step of two-time cleaning, the tenth step of intermediate rolling, the eleventh step of three-time annealing, the twelfth step of three-time cleaning, the thirteenth step of finish rolling, the fourteenth step of four-time cleaning and the fifteenth step of leveling, wherein in the fourth step of rough rolling, after rough rolling, the regulated thickness of a belt roll is 2.5 mm. By means of the technical scheme, the copper belt annealing technology quality and the copper belt surface quality can be improved, and therefore the workshop cost can be reduced, and the productive profit can be increased.

The invention discloses a small-size LED copper strip production process, and belongs to the technical field of the copper strip production process. The production process includes the following stepsof (1) smelting and ingot casting, (2) hot rolling, (3) milling, (4) rough rolling, (5) first annealing, (6) one-step cleaning, (7) intermediate rolling, (8) secondary annealing, (9) secondary cleaning, (10) intermediate finish rolling, (11) third annealing, (12) third cleaning, (13) finish rolling, (14) unwinding, (15) fourth annealing, (16) fourth cleaning, (17) refine rolling, (18) fifth cleaning, (19) flattening and (20) cutting and delivery. According to the technical scheme, the quality of small-size LED copper strips can be improved, the workshop cost is reduced, and the production profits are increased.

The invention discloses a high-efficiency short-process heat treatment technology for marine titanium alloy, wherein a plurality of TA5 (Titanium Alloy5) plates are overlapped, a Q235 pressing plate is arranged on the TA5 plates, the thickness of the Q235 pressing plate ranges from 30 to 50 mm, the roughness degree of the pressing plate is less than or equals to 5 mm/m, the charging is performed at the temperature ranging from 400 to 500 DEG C, heat preservation is performed for 50 to 70 minutes at the temperature of 550 DEG C, and temperature rises at the speed of 4 to 5 DEG C/min until reaching 700 DEG C and then heat preservation is performed for 150 to 200 minutes; in addition, the TA5 plates move about in a roller hearth furnace in a reciprocating manner during the whole heat treatment process, the rotational frequency of a roller ranges from 5 to 6 Hz, and the rotational frequency of the roller ranges from 10 to 15 Hz in a wind cooling stage. The TA5 plates that are processed through the high-efficiency short-process heat treatment technology achieve good performance uniformity, the shear strength of all parts of the TA5 plates ranges from 680 to 700 Mpa, the tensile strength ranges from 700 to 725Mpa, the elongation percentage ranges from 19 to 23 percent, and the high-efficiency short-process heat treatment technology is a plurality of times the annealing efficiency of a continuous annealing furnace.

The invention discloses a production technology of a copper strip for an automobile contact and belongs to the technical field of copper plate and strip production technologies. The production technology comprises 1, ingot melting casting, 2, surface milling, 3, hot rolling, 4, rough rolling, 5, primary annealing, 6, primary washing, 7, medium rolling, 8, secondary annealing, 9, secondary cleaning, 10, medium finish rolling, 11, tertiary annealing, 12, tertiary washing, 13, finish rolling, 14, quaternary washing and 15, leveling. The production technology improves annealing process quality and copper strip surface quality, reduces a workshop cost and improves productive profits.

The invention relates to an annealing apparatus and an annealing process. The annealing apparatus comprises a temperature gradient preheating unit which is used for performing gradient heating on a to-be-annealed substrate by using gradient temperatures, a high temperature unit which is used for performing high-temperature heating on the preheated substrate, a moving apparatus which is used for transporting the substrate to the high temperature unit from the temperature gradient preheating unit during the gradient preheating of the substrate and/or after the preheating of the substrate. The beneficial effects of the annealing apparatus and the annealing process are that since the method of gradient heating is adopted and preheating processing is conducted on the substrate, the annealing efficiency is improved; since a plasma induction unit and the electromagnetic field auxiliary high temperature unit are added, multiple functions are integrated and the annealing efficiency is further improved.

The invention discloses a medium-high-voltage electronic aluminum foil for a high-capacity and high-strength capacitor and a preparation method thereof. Through the production modes of casting and a continuous air cushion furnace, the specific volume is increased, and the production period is shortened; and the continuous air cushion furnace is used for multiple times for homogenization and annealing, and the problem that a casting structure is not uniform is solved, so that the performance and the cubic texture are improved, and the medium-high-voltage high-purity aluminum foil for the high-capacity and high-strength capacitor is obtained.

The embodiment of the invention provides a preparing process of a titanium strip coil used for a high-end anode. The preparing process comprises two rolling processes, the size and the uniformity of grains of a finished product are controlled conveniently, surface defects of the produced titanium coil are less, compared with first rolling process rolling, namely a hot rolling coil is directly rolled to the thickness of a second-thickness cold rolling coil, the pausing does not occur in the middle, and if continuous annealing and surface treatment are carried out firstly, and then second rolling process rolling is carried out, the surface defects of the finally obtained finished product are more. After the finished product is annealed, then flatten treatment is conducted, and then an oxidelayer on the surface of the titanium coil is uniformly crushed, so that a more consistent condition is provided for the etching of the subsequent titanium coil, the etching effect can be improved, thesurface color of an etched titanium plate is consistent, and finally, the titanium plate coating is better facilitated.

The invention discloses a laser annealing device. The laser annealing device comprises a laser source which provides a laser beam, a beam expanding module which is located on an optical path of an output beam of the laser beam, a beam shaping module which is used for enabling a beam output by the beam shaping module to have uniform energy density, and a flat field focus lens which is located on an optical path of the output beam of the beam shaping module, and is used for focusing the beam output by the beam shaping module into flat topped light spots. According to the laser annealing device and a laser annealing method, which are provided by the invention, the optical components are used to carry out adjusting, and the flat topped light spots of uniform energy distribution are transmitted; the annealing efficiency is high; good uniformity is realized; the activation rate of crystal arrangement is improved; and effective processing is realized.

Disclosed is a method for preparing a magnesium diboride superconductive Josephson junction through a secondary mask method. According to the method, an electron beam is adopted to carry out annealing on an interlayer type (sandwich type) magnesium diboride Josephson junction precursor film. The interlayer type magnesium diboride Josephson junction precursor film is a (Mg/B)-X-(Mg-B) structure precursor film prepared through the secondary mask method, X represents a standard conductor layer N or an insulation layer I, magnesium elementary substance and boron elementary substance in the precursor film are made to generate a chemical reaction within the annealing time of a second magnitude order, finally the SNS type or SIS type magnesium diboride superconductive Josephson junction of a MgB2-X-MgB2 structure is generated, and S represents a superconductive layer.

The present invention relates to the field of inorganic compound single crystal annealing modification, and especially to an annealing method for an infrared nonlinear single crystal of a multi-component compound containing easily volatile components. According to the method, a near-stoichiometric polycrystalline material is adopted as annealing atmosphere, and the polycrystalline material volatilization is separated from the single crystal annealing so as to overcome the blindness, wherein the blindness is attempting annealing experiments through change of various annealing parameters in the following cases, the cases comprise that defect type and proportion thereof of the crystal containing easily volatile components are not known; according to the complementation characteristic of the crystal growth and the temperature gradient annealing component volatilization, the temperature of the high temperature zone and the temperature gradient are changed so as to change the proportion of the volatile component and the annealing rate, and achieve the rapid and effective single crystal annealing.

The invention discloses a dehydroxylation annealing method and device of a large-size optical fiber perform. The method comprises the following steps of (1) putting the optical fiber perform into an annealing furnace; (2) heating the optical fiber perform to a stress release temperature through temperature rises for three times; (3) carrying out heat preservation; and (4) cooling the optical fiber perform to a cooling temperature through cooling for four times. The optical fiber perform is heated to the stress release temperature through temperature rises for three times, the temperature rise rates of three stages are different and are gradually reduced according to the characteristics of the optical fiber perform and the thermal stability of the optical fiber perform can be ensured by the heating mode. The target of heat preservation is fully heating the inside of the perform to ensure the stress release reliability. The cooling rate of a front stage is lower than that of a later stage in a manner of gradual cooling for four times, and the heat in the perform can be slowly and uniformly sent out by the cooling mode, so that the optical fiber perform is effectively prevented from generating new thermal stress in a thermal stress release process.

The invention discloses a dehydroxylation annealing method and device for a large-size optical fiber preform. The method comprises the steps of (1) putting the optical fiber preform into an annealing furnace; (2) heating the optical fiber preform to a destressing temperature through heating for four times; (3) carrying out heat preservation; and (4) cooling the optical fiber preform to a cooling temperature through cooling for four times. The optical fiber preform is heated to the destressing temperature through gradual heating for four times, so that the heat stability of the preform can be ensured; the condition that the internal heat of the preform can be slowly and uniformly emitted can be effectively ensured through gradual heating for four times; heating and cooling are carried out in a vacuum environment; and relative to a non-vacuum environment, the vacuum state is more conductive to separation of residual He and hydroxyl in the optical fiber preform and the effect is better.

The present invention provides method of eliminating stress and damage of light receiver during monolithic photoelectronic integration. The area of semiconductor surface to be annealed is irradiated with laser beam of very high power density to produce abrupt temperature change process with great temperature change rate, short duration and proper range, so as to improve the performance of the semiconductor and eliminate defects, damage, etc. The method of the present invention is especially suitable for eliminating stress and damage of PDIC after ion implantation during monolithic PDIC manufacture.

The invention discloses a tunnel type oriented silicon steel continuous high-temperature annealing process. Continuous annealing production of oriented silicon steel is achieved, and the problem of a long production cycle is solved, and the energy consumption is reduced. According to the adopted technical scheme, the tunnel type oriented silicon steel continuous high-temperature annealing process comprises the following steps of loading; furnace filling: a trolley loaded with a steel coil is moved to the inlet position of an annealing furnace through a laid rail, and is pushed into the annealing furnace through a hydraulic push rod; annealing treatment; cooling; discharging; unloading; trolley overhauling; and executing the above steps repeatedly to achieve continuous annealing treatment, wherein protection gas is introduced into sealing covers of the oriented silicon steel in the whole annealing furnace. The tunnel type oriented silicon steel continuous high-temperature annealing process can be widely applied to the field of oriented silicon steel continuous annealing furnaces.

The present invention provides a wafer gettering method. The method comprises: performing a first annealing on a to-be-treated wafer, wherein the first annealing is performed under an oxygen atmosphere and a first temperature condition for a first time; depositing a polysilicon layer on a surface of the to-be-treated wafer; performing a second annealing on the to-be-treated wafer, wherein the second annealing is performed under an inert gas atmosphere and a second temperature condition for a second time which is greater than or equal to the first temperature. According to the wafer gettering method, the polysilicon layer can effectively adsorb oxygen atoms in the vacancies, thereby removing wafer defects; the two annealing processes can promote atom rearrangement and further eliminate defects in the to-be-treated wafer; the second annealing can uniformly heat the to-be-treated wafer in a short time by microwave annealing, thereby improving the activity of atomic motion and further improving the annealing efficiency; and the two annealings are performed at lower temperatures, which can avoid wafer warpage caused by high annealing temperature and improve wafer quality.

The invention discloses a soft magnetic material annealing thermal treatment method. The soft magnetic material annealing thermal treatment method comprises the following steps of: S1, performing rust-removal treatment on a soft magnetic material; S2, performing de-oiling rust-removal treatment on the soft magnetic material; S3, drying the soft magnetic material; andS4, adopting a chain type furnace to perform annealing treatment on the soft magnetic material, wherein a furnace hearth of the chain type furnace comprises a first heating area, a second heating area, a first heat-preserving area,a second heat-preserving area, a first cooling region, a second cooling area and a cooling warm area from an inlet to an outlet. Continuous annealing thermal treatment is performed on the soft magnetic material under an unsealed environment, so that annealing efficiency can be greatly improved; an annealing curve is formed in each warm area, so that a microstructure of the soft magnetic materialcan be improved, magnetic conductivity of the soft magnetic material is improved, and coercive force of the soft magnetic material is reduced; after being subjected to annealing thermal treatment, thesoft magnetic material has high magnetic conductivity and low coercive force, and can quickly respond to outer magnetic field changes; and under the low coercive force condition, the soft magnetic material improves sensitivity of an electromagnetic product.

The invention discloses a pit type annealing furnace for nonferrous metal copper processing. The pit type annealing furnace for nonferrous metal copper processing comprises a furnace body, a feed hopper and a furnace lid, wherein the top part of the furnace body communicates with the bottom part of the feed hopper; the inner wall of the feed hopper is fixedly connected with the surface of the furnace lid through a screw; a winding box is fixedly connected to the bottom part, located in an inner cavity of the feed hopper, of the furnace lid; a limiting barrel is fixedly connected to one side ofan inner cavity of the winding box; and a rotary shaft is rotatably connected between the top part and the bottom part of the inner wall of the limiting barrel through a rolling wheel. The pit type annealing furnace for nonferrous metal copper processing provided by the invention relates to the technical field of pit type annealing furnaces. According to the pit type annealing furnace for nonferrous metal copper processing, metal copper to be processed can be conveniently placed by a user, and the annealed metal copper can be well taken out, so that the whole annealing efficiency is greatly improved, the time of the user is saved, the labor intensity of working personnel is reduced to a certain extent, the potential safety hazard of direct operation of working personnel is avoided, the practicability is high, and the user can conveniently operate the furnace and can be assisted to close the furnace lid.

The invention discloses an isothermal spheroidizing annealing furnace for automobile bearing ring machining. The isothermal spheroidizing annealing furnace for automobile bearing ring machining comprises an annealing furnace body, wherein a fixing plate is fixedly connected between the two sides of the inner wall of the annealing furnace body, and slide blocks are slidably connected to the two sides of the bottom of the fixing plate; a spray head is fixedly connected to the bottom of each slide block; a first motor is fixedly connected to the top of the annealing furnace body through a supportframe; a thread rod is fixedly connected to the output shaft of the first motor through a shaft coupling; the bottom end of the thread rod penetrates through the annealing furnace body and extends into the annealing furnace body; and one end extending into the annealing furnace body, of the thread rod, is rotationally connected with the top of the fixing plate through a bearing. The invention relates to the technical field of automobile bearing ring machining equipment. The isothermal spheroidizing annealing furnace for automobile bearing ring machining is capable of greatly annealing a bearing ring, and short in annealing time, thereby greatly increasing the annealing efficiency and improving the quality of the bearing ring.