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261results about How to "Shine well" patented technology

Selective growth method, and semiconductor light emitting device and fabrication method thereof

In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness distribution of the crystal layer can be corrected by inserting the growth interruption. As a result of growth interruption, an etching rate at a thick portion becomes higher than that at a thin portion, to eliminate the difference in thickness between the thick portion and the thin portion, thereby solving the problem associated with degradation of characteristics due to a variation in thickness of the crystal layer, for example, an active layer. The selective growth method is applied to fabrication of a semiconductor light emitting device including an active layer as a crystal layer formed on a crystal layer having a three-dimensional shape by selective growth.
Owner:SAMSUNG ELECTRONICS CO LTD

Phosphor, light source and LED

InactiveUS20050189863A1Improve luminance of light lightImprove of visible light lightDischarge tube luminescnet screensLamp detailsPhosphorUltraviolet lights
A phosphor with high efficiency having an excitation band corresponding to light of the ultraviolet-visible (300 to 550 nm) wavelength region emitted from a light emitting portion which emits blue or ultraviolet light is provided. A nitride of Ca, a nitride of Al, a nitride QfSi, and an oxide of Eu are prepared, and respective raw materials are weighed so that a mol ratio of respective elements becomes Ca:Al:Si:Eu=0.985:3:1:0.015, mixed under a nitrogen atmosphere, and thereafter fired at 1500° C. in a nitrogen atmosphere to thereby produce a phosphor having a composition formula Ca0.985SiAlN3:Eu0.015.
Owner:NICHIA CORP

Quantum dot phosphor for light emitting diode and method of preparing the same

Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
Owner:SAMSUNG ELECTRONICS CO LTD

Light emitting diode

A light emitting diode is provided, wherein a first semiconductor layer is disposed on a substrate, and a second semiconductor layer is disposed on the first semiconductor layer. The first and the second semiconductor layers are doped with different type dopants. In addition, a second electrode is disposed on the second semiconductor layer, and a first electrode is disposed on the first semiconductor layer to surround the second electrode. A dielectric layer is disposed on the substrate to isolates the first electrode from the second electrode. A redistributing circuit is disposed on the dielectric layer. The redistributing circuit is electrically connected to the first electrode and the second electrode to provide a first extending electrode and a second extending electrode. The light emitting diode can prevent the crowding effect and provide better reliability and light emitting efficiency.
Owner:CHUNGHWA PICTURE TUBES LTD

Light source unit and projector

To provide a light source unit which can increase luminance and a projector including this light source unit. This light source unit includes a luminous wheel having a segment area on which a luminescent material layer is formed which emits light of a predetermined wavelength band by receiving light, and a segment area which is made into a transmission portion which transmits light, a primary light source which shines light of a visible wavelength band on to the luminous wheel, a secondary light source which emits light of a wavelength band which is different from light from the luminescent material layer and light from the primary light source, a collective optical system which collects light from the luminous wheel and the secondary light source to cause them to converge to the same optical path, and a light source control device which controls the emission of light from the light sources.
Owner:CASIO COMPUTER CO LTD

Phosphor and production method of the same and light source and LED using the phosphor

A phosphor with high efficiency having an excitation band corresponding to light of the ultraviolet-visible (300 to 550 nm) wavelength region emitted from a light emitting element which emits blue or ultraviolet light is provided. Commercially available CaO [3N], Si3N4 [3N], and Eu2O3 [3N] are prepared, respective materials are weighed and mixed to have a mol ratio of CaO:Si3N4:Eu2O3=1.4775:1:0.01125, and then the mixture is heated to 1600° C. by a heating rate of 15° C. / min under a nitrogen atmosphere and retained and fired at 1600° C. for three hours. Thereafter, the raw materials are cooled down from 1600° C. to 200° C. for an hour to thereby produce a phosphor having a composition formula Ca1.58Si3O1.63N4.35:Eu0.024.
Owner:DOWA ELECTRONICS MATERIALS CO LTD

Display device and electronic device

It is an object of the present invention to provide a display device in which a reverse current sufficient enough to insulate a short-circuited point flows and a transistor using amorphous silicon is used is applied. The display device includes a switching transistor that controls an input of a video signal, a driving transistor that controls a current flowing in a forward direction to a light emitting element, and an AC transistor that controls a current flowing in a reverse direction to the light emitting element; and a reverse bias current can be applied to the light emitting element. Furthermore, the above-described transistors are N-channel transistors.
Owner:SEMICON ENERGY LAB CO LTD

Carbazole derivative, and light emitting element material, light emitting element, and electronic appliance obtained using the same

ActiveUS20090058261A1Easy to trapEnhancing recombinationOrganic chemistryDischarge tube luminescnet screensAntioxidative responseAryl
An object is to provide a carbazole derivative that is useful as a raw material in manufacturing a light emitting element material having resistance to repetition of an oxidation reaction. The carbazole derivative is represented by General Formula (1) in the following. In General Formula (1), R1 represents any one selected from an alkyl group having 1 to 4 carbon atoms such as methyl, ethyl, and tert-butyl, and an aryl group having 1 to 12 carbon atoms such as phenyl, biphenyl, and naphthyl.
Owner:SEMICON ENERGY LAB CO LTD

Phosphor, production method thereof, phosphor-containing composition, light emitting device, and display and illuminating device

To provide a phosphor that stably shows high emission intensity and brightness as well as superior temperature characteristics, under excitation by near-ultraviolet light, the phosphor contains an alkaline-earth metal aluminate and has a crystal phase comprising an alkali metal element and, in that crystal phase, the rate of substituted Eu (europium) to the number of sites which can be substituted with Eu of the crystal phase is 25% or higher and the ratio of the alkali metal element to the number of sites which can be substituted with Eu of the crystal phase is 3% or lower.
Owner:MITSUBISHI CHEM CORP

Organic electroluminescent element

With a light-emission-layer material comprising: a novel polycyclic aromatic compound (1) or a multimer thereof in which a plurality of aromatic rings are linked by a boron atom and a nitrogen atom; and a specific anthracene-based compound (3) that achieves optimum light-emission characteristics in combination with said polycyclic aromatic compound or a multimer thereof, it is possible to provide an organic EL element having optimum light-emission characteristics.Ring A to ring C are an aryl ring or the like, Y1 represents B, X1 and X2 represent N—R, R of the N—R is an aryl or the like, and Ar3 and Ar4 are a hydrogen atom, a phenyl, a group represented by formula (4), or the like.
Owner:KWANSEI GAKUIN EDUCATIONAL FOUND +1

Nanoparticle electroluminescence and method of manufacturing the same

The nanoparticle electroluminescence device includes: a front electrode formed of a transparent conductive material; a rear electrode formed of a conductive material; and an emitting layer interposed between the front electrode and the rear electrode and comprising a plurality of nanoparticles having a core / shell structure comprising a core formed of silicon and a shell formed of silicon oxide or silicon nitride on the surface of the core.
Owner:SAMSUNG ELECTRONICS CO LTD

Phosphor, method for manufacturing same, and light emitting diode

A phosphor is formed with a glass coating layer on a surface of a phosphor grain to have improved moisture and / or thermal stability. A method for manufacturing the phosphor comprises preparing phosphor grains excitable by light, and forming a glass coating layer on a surface of each phosphor grain. The glass coating layer may be formed by mixing the phosphor grains with a glass composition; heat-treating a mixture of the phosphor grains and the glass composition to make the glass composition melt and surround the phosphor grains; and cooling and breaking the heat-treated mixture to provide phosphors, each comprising the phosphor grain having the glass coating layer formed on a surface of the phosphor grain.
Owner:SEOUL SEMICONDUCTOR

Semiconductor light emitting element mounting member, and semiconductor light emitting device employing it

A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and / or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 μm and the center-line average roughness Ra of the surface is no more than 0.1 μm. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.
Owner:SUMITOMO ELECTRIC IND LTD

Phosphor activated with europium, light emitting device using the same and method of manufacturing the phosphor

Provided are a phosphor which is capable of emitting green light of high luminance and in which unfavorable effects on other members has been reduced so as to be applicable to white light having excellent light emitting characteristics, a light emitting device using the phosphor, and a method for manufacturing the phosphor. The phosphor containing silicon, magnesium, and chlorine, and activated with europium and capable of emitting green light, in which the molar ratio of chlorine to magnesium is in a range of 1.0≦Cl / Mg≦1.9. Introduction of chlorine at such a composition ratio improves the light emitting characteristics and the amount of chlorine dissolved.
Owner:NICHIA CORP

Nitride semiconductor light-emitting device

InactiveUS20120098023A1Improve current spreading efficiencyLow working voltageSemiconductor devicesActive layerLight emitting device
A nitride semiconductor light-emitting device includes at least one n-type semiconductor layer, an active layer and at least one p-type semiconductor layer within a rectangle nitride semiconductor region on a substrate. The n-type semiconductor layer has a partial exposed area, a p-side branch electrode integral with a p-side electrode pad formed on a current diffusion layer formed on the p-type semiconductor layer, an n-side branch electrode integral with an n-side electrode pad formed on the partial exposed area of the n-type semiconductor layer, the p-side and n-side branch electrodes extend parallel to each other along two opposite sides of the semiconductor region, and conditions of 0.3<M / L<1.1 and L<Lmax are satisfied; L is the distance between centers of the p-side and n-side electrode pads, M is the distance between the p-side and n-side branch electrodes, and Lmax represents a distance between the centers of the p-side and n-side electrode pads.
Owner:SHARP KK

Carbazole derivative and organic light emitting device using the same

Provided is an organic light emitting device including: a pair of electrodes including an anode and a cathode; and at least one layer formed of an organic compound interposed between the pair of electrodes, in which the at least one layer formed of the organic compound layer contains at least one kind of the carbazole derivative represented by the following general formula (I). The organic light emitting device has an optical output with extremely high efficiency and a high luminance and has an extremely high durability.
Owner:CANON KK

Semiconductor Light Emitting Device

A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t / (A / π)1 / 2−3(t / (A / π)1 / 2)2+(t / (A / π)1 / 2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.
Owner:ROHM CO LTD

Substrate of emitting device and emitting device using the same

Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a s second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.
Owner:SAMSUNG DISPLAY CO LTD

Light emitting device and method for manufacturing the same

In a light emitting device having a light emitting element, mounted on a substrate, at least one portion of which is coated with a mold component, the mold component is provided with resin particles and or inorganic material particles, phosphor particles and a sealing resin, and phosphor particles have a specific gravity different from that of resin particles and / or the inorganic material particles, and are made from a grain-shaped phosphor which, when irradiating with excited light, emits fluorescent light having a wavelength longer than that of the excited light, with resin particles and / or the inorganic material particles and the phosphor particles being dispersed in sealing resin; thus, the present invention relates to such a light emitting device and a method for manufacturing the same.
Owner:SHARP KK
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