Radio frequency inductor element based on silicon substrate on insulator, and preparation method for radio frequency inductor element

Abstract

The invention discloses a radio frequency inductor element based on a silicon substrate on an insulator, and a preparation method for a radio frequency inductor element, and the method comprises the steps: 1), preparing the silicon substrate on the insulator, wherein the silicon substrate comprises a bottom silicon layer, an insulating layer and a top silicon layer, wherein the bottom silicon layer, the insulating layer and the top silicon layer are stacked together. A part, corresponding to a position where a radio frequency inductor element is prepared, of the lower part of the insulating layer is provided with a groove which at least reaches the bottom silicon layer; 2), defining a device region at a position corresponding to the groove through mask photoetching, removing the top silicon layer of the device region through etching, and exposing the upper surface of the insulating layer; 3), preparing the radio frequency inductor element in the device region based on the CMOS technology. The radio frequency inductor element is based on the patterned silicon substrate on the insulator, and the radio frequency inductor element with a substrate cavity is obtained through the later etching. The radio frequency inductor element can effectively inhibit the inductance loss caused by the silicon substrate, reduces the stray capacitance, and facilitates the improvement of the Q value and resonant frequency of the inductor.

Description

technical field [0001] The invention relates to a semiconductor component and a preparation method thereof, in particular to a radio frequency inductance element based on a silicon-on-insulator substrate and a preparation method thereof. Background technique [0002] Wireless communication technology is one of the fastest-growing technologies in the IT field in recent decades, and radio frequency circuits play a vital role in wireless communication. With the rapid development of CMOS technology, the cost of manufacturing electronic devices based on CMOS technology has been greatly reduced. According to the report of the International Solid State Circuits Annual Conference in recent years, the largest markets for integrated circuits (ICs) are network equipment, mobile phones and consumer electronics. China is already the third largest market for ICs, and its potential market attracts worldwide attention, among which the number of mobile phone users ranks first in the world. ...

AI Technical Summary

Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a radio frequency inductive element based on a silicon-on-insulator substrate and a preparation method thereof, which is used to solve the problem of the relatively high Q value and resonance frequency of the radio frequency inductive element in the prior art. low problem

Images