Radio Frequency Inductive Element Based on Silicon-on-Insulator Substrate and Its Preparation Method

Abstract

The invention provides a radio frequency inductive element based on a silicon-on-insulator substrate and a preparation method thereof. The preparation method includes: 1) preparing a silicon-on-insulator substrate, the silicon-on-insulator substrate comprising sequentially stacked bottom silicon, insulating Layer and top layer of silicon, the lower part of the insulating layer has a groove at least up to the bottom silicon at the position corresponding to the preparation of the radio frequency inductive element; 2) define the device area by mask photolithography at the position corresponding to the groove , and etch and remove the top layer of silicon in the device region, exposing the upper surface of the insulating layer below; 3) preparing a radio frequency inductive element in the device region based on a CMOS process. The invention is based on a patterned silicon-on-insulator substrate, and obtains an inductance element with a substrate cavity through post-etching. The device structure can effectively suppress the inductance loss caused by the silicon substrate and reduce the parasitic capacitance, which is beneficial to improving the Q value and the resonant frequency of the inductance device.

Description

technical field [0001] The invention relates to a semiconductor component and a preparation method thereof, in particular to a radio frequency inductance element based on a silicon-on-insulator substrate and a preparation method thereof. Background technique [0002] Wireless communication technology is one of the fastest-growing technologies in the IT field in recent decades, and radio frequency circuits play a vital role in wireless communication. With the rapid development of CMOS technology, the cost of manufacturing electronic devices based on CMOS technology has been greatly reduced. According to the report of the International Solid State Circuits Annual Conference in recent years, the largest markets for integrated circuits (ICs) are network equipment, mobile phones and consumer electronics. China is already the third largest market for ICs, and its potential market attracts worldwide attention, among which the number of mobile phone users ranks first in the world. ...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a radio frequency inductive element based on a silicon-on-insulator substrate and a preparation method thereof, which is used to solve the problem of the relatively high Q value and resonance frequency of the radio frequency inductive element in the prior art. low problem

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