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A micromechanical resonator, its preparation and frequency fine-tuning correction method

A technology of micro-mechanics and resonators, applied in impedance networks, electrical components, etc., can solve problems such as limitations and deterioration of MEMS resonator performance, improve consistency, reduce device size, and reduce the complexity of design and processing Effect

Active Publication Date: 2021-04-02
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method must use a special packaging material, so that the frequency-modulated laser can transmit the packaging material to the device surface, thus limiting the application of this method
Another method is to pre-deposit a metal layer on the surface of the device, and heat it to a very high temperature by resistance to diffuse the metal and the device material to form an alloy, change the equivalent stiffness of the device, and adjust the frequency, but this method will change the MEMS resonator. Q The temperature coefficient (Temperature Coefficient of Frequency, TCF) of the value and the resonant frequency, causing MEMS resonator performance to deteriorate

Method used

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  • A micromechanical resonator, its preparation and frequency fine-tuning correction method
  • A micromechanical resonator, its preparation and frequency fine-tuning correction method
  • A micromechanical resonator, its preparation and frequency fine-tuning correction method

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Embodiment 1

[0075] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic ideas of the present invention, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of components in accordance with actual implementation Drawing, the type, quantity and proportion of each component can be changed arbitrarily during its actual implementation, and the component layout type may also be more complicated.

[0076] The invention provides a kind of preparation method of MEMS piezoelectric resonator, comprises the following steps:

[0077] (1) if Picture 1-1 As shown, prepare a substrate silicon wafer (SOI substrate) with a concave cavity. The cavity shape can be cylinder, cuboid and irregular body (corresponding to the shape of the resonator).

[0078] (2) if Figure 1-2 As shown, a layer of silicon oxide is prepared on the surface of SOI by thermal oxidation or chemical vapor ...

Embodiment 2

[0093] According to the structure of the resonator in Example 1, the process and structure can be changed to reduce process steps and production costs. The preparation steps are basically the same as in Example 1, the difference is:

[0094] 1. Step (3) is replaced by ion implantation or diffusion method to heavily dope the upper layer silicon of SOI, such as diagram 2-1 shown.

[0095] 2. Step (4) in Embodiment 1 is removed, and metal is not used as the bottom electrode, and heavily doped bottom silicon is directly used as the bottom electrode. The final structure is as Figure 2-2 shown.

Embodiment 3

[0097] Embodiment 1 only provides the method of fine-tuning to reduce the frequency of the resonator. In this embodiment, the structure of the resonant oscillator and the frequency modulation layer 9 can be changed, and the frequency can be fine-tuned by adding auxiliary frequency modulation structures at both ends of the resonant oscillator structure to realize the resonant frequency. Two-way adjustment of increase and decrease. Its preparation step flow process is basically the same as Example 1, the difference is:

[0098] 1. After completing step (6), a layer of aluminum frequency modulation layer is deposited on the upper surface of the top electrode metal layer by evaporation and sputtering, and the auxiliary frequency modulation structure area at both ends of the resonator is retained by patterned photolithography and etching. The aluminum layer is used for electrical wiring at the same time, and the positive and negative electrodes are externally connected at both ends...

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Abstract

The invention discloses a micromechanical resonator, a preparation method thereof and a frequency fine tuning correction method. The micromechanical piezoelectric resonator comprises a substrate silicon wafer with a cavity structure, a resonant oscillator, a frequency modulation layer, a packaging film layer and a metal bonding pad structure. A wafer-level vacuum packaging method is adopted to seal a substrate silicon wafer concave cavity, a resonant oscillator, frequency modulation and other structures in a vacuum cavity. According to the frequency fine tuning method of the piezoelectric resonator provided by the invention, the frequency change of the resonator is monitored in real time by adopting the control host, and the frequency is fine tuned to the target frequency by adjusting the magnitude of the current introduced into the suspended frequency modulation layer or the surface frequency modulation layer of the auxiliary frequency modulation structure; and the position of a test platform of the probe station is automatically moved through a control bus of the automatic test probe station, so that wafer-level automatic frequency fine tuning of the micromechanical resonator is realized. Wafer-level vacuum packaging of the micromechanical resonator and accurate fine tuning of the frequency after packaging are realized, the method is simple and efficient, and technical support is provided for practicability and commercialization of the micromechanical resonator.

Description

technical field [0001] The invention belongs to the field of micromechanical sensors, and in particular relates to a piezoelectric micromechanical resonator, a preparation method thereof, and a frequency fine-tuning correction method. Background technique [0002] A resonator is an electronic component that generates a resonant frequency and controls the frequency. As a reference for generating time and frequency, resonators are widely used in consumer electronics, automotive electronics, industrial control, and wireless communications. Micro-mechanical resonators manufactured using Micro-Electro-Mechanical System (MEMS) technology have small size, low power consumption, and quality factor ( Q Value) high, good compatibility with complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) circuit manufacturing process, etc., the demand in the industrial field is increasing day by day. [0003] According to different electromechanical coupling tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/05H03H9/10
CPCH03H9/02338H03H9/02393H03H9/0547H03H9/1057H03H2009/02283
Inventor 吴国强吴忠烨陈文
Owner 武汉敏声新技术有限公司
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