287results about How to "Contact resistance" patented technology

To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405.

A display device in which interconnection—electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and/or Mg in a total amount from 0.1 to 3.0 at %, or Ni and/or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.

A thin film transistor, a method of manufacturing the same, and a flat panel display device having the same use an oxide semiconductor as an active layer, wherein the thin film transistor includes: an oxide semiconductor layer formed on a substrate and having a channel region, a source region, and a drain region; a gate electrode insulated from the oxide semiconductor layer by a gate insulating layer; an ohmic contact layer formed on the source region and the drain region of the oxide semiconductor layer; and a source electrode and a drain electrode coupled to the source region and the drain region through the ohmic contact layer, the ohmic contact layer being formed of a metal having a lower work function lower than work functions of the source electrode and the drain electrode.

An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

A method for manufacturing a semiconductor device includes the steps of: (a) forming a gate electrode on a substrate, forming source/drain regions and a channel forming region in the substrate, and forming on the source/drain regions a first interlayer insulating layer equal in height to the gate electrode; (b) forming in the first interlayer insulating layer groove-shaped first contact portions connected to the source/drain regions; (c) forming a second interlayer insulating layer on a whole surface; (d) forming hole-shaped second contact portions in portions of the second interlayer insulating layer on the first contact portion; and (e) forming on the second interlayer insulating layer wires connected to the second contact portions.

Devices and methods for their use in percutaneously increasing the aortic valve flow of a stenotic aortic valve are provided. The subject devices include an aortic valve isolation element, a shunt element and an aortic valve flushing element. Also provided are systems and kits that include the subject devices and can be employed in practicing the subject methods. The subject devices, methods, systems and kits find use in treating conditions associated with the presence of stenotic aortic valves.

An organic thin film transistor (TFT) includes: an organic semiconductor film; source and drain electrodes electrically connected to the organic semiconductor film; a gate electrode electrically insulated from the source and drain electrodes and the organic semiconductor film; and an organic acceptor film interposed between the source and drain electrodes and the organic semiconductor film.

To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced.

An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer.

Self-fronting merchandise pusher systems. Numerous products in a store are merchandised on shelves and spring-biased pushers are used to urge products toward the front edge of the shelf on which the products are displayed and stored. Each pusher is generally mounted on a track, and each pusher track is generally positioned between two divider walls or between a divider wall and an end wall. Each pusher is independently biased towards the front of the shelf. The system provides an improved apparatus for coupling any of the longitudinal members, such as the pusher tracks, divider walls or integrated divider/pusher tracks, to the shelf-mounting member. The shelf-mounting member forms an alignment track for selective and slidable coupling with the longitudinal members. The coupling is designed to resist sliding when the coupling is under torque.

A fabrication method of a selective emitter solar cell, including: forming a selective emitter solar cell base having a buried grid electrode; forming an anti-reflection layer on the emitter surface of the solar cell base; forming a bus-bar on the anti-reflection layer; and connecting the buried grid electrode with the bus-bar in the traversing direction underneath through the anti-reflection layer. Accordingly, the invention provides a selective emitter solar cell. With the method of the invention, emitters and bus-bars are made separately, the width of the emitters can be reduced according to actual needs, the area that is unnecessarily taken may be reduced, the effective area for a solar cell panel to receive sunlight may be increased. The invention improves conversion efficiency of a selective emitter solar cell panel from 16.5% to 18% or more.

An electroluminescence display device comprising a thin film transistor and an electroluminescence element wherein the electroluminescence element's anode and a portion of the thin film transistor's source/drain electrode are deposited on to a same surface and the electroluminescence element's anode and the portion of the thin film transistor's source/drain electrode overlap and make an electrical contact with improved contact resistance.

Pressure applied to a mobile phone main body is detected at the time of call/mail arrival, and in compliance therewith vibration of a vibrator of a mobile phone is controlled. As a result, vibration is controlled in compliance with a degree of contact between the mobile phone and a body of a user, so that notification of an incoming call/mail by vibration can be conducted more surely.

Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.

A thruster (1) has a main chamber (6) defined within a tube (2). The tube has a longitudinal axis which defines an axis (4) of thrust; an injector (8) injects ionizable gas within the tube, at one end of the main chamber. An ionizer (124) is adapted to ionize the injected gas within the main chamber (6). A first magnetic field generator (12, 14) and an electromagnetic field generator (18) are adapted to generate a magnetized ponderomotive accelerating field downstream of said ionizer (124) along the direction of thrust on said axis (4),

The thruster (1) ionizes the gas, and subsequently accelerates both electrons and ions by the magnetized ponderomotive force.

An object of this invention is to effectively reduce a connection resistance between a plug and an interconnect, and a dielectric constant of an insulating film.

A semiconductor device 100 has a semiconductor substrate (not shown); a first interconnect 108 made of a copper-containing metal which is formed over the semiconductor substrate; a conductive first plug 114 formed over the first interconnect 108 and connected to the first interconnect 108; a Cu silicide layer 111 over the first interconnect 108 in an area other than the area where the first plug 114 is formed; a Cu silicide layer 117 over the first plug 114; and a first porous MSQ film 105 formed over an area from the side surface of the first interconnect 108 to the side surface of the first plug 114 and covering the side surface of the first interconnect 108, the upper portion of the first interconnect 108 and the side surface of the first plug 114.

A metallic separator for a fuel cell has excellent corrosion resistance and contact resistance, even when a gold coating is applied directly without a surface treatment by a nickel coating. The metallic separator for a fuel cell, comprising stainless steel having a surface, can be obtained by coating at 2.3 to 94 % of area rate on the surface without a surface treatment.

A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer.

A organic EL display panel includes an inter-layer insulation film, a pixel electrode, auxiliary wiring, a partition layer, an organic light-emitting layer, and a common electrode. The inter-layer insulation film has at least one paired concave portion and non-concave portion disposed in a region over the auxiliary wiring, a top face of the concave portion being concave with respect to a top face of the non-concave portion, and the auxiliary wiring includes a part over the concave portion and a part over the non-concave portion, a top face of the part over the concave portion being concave with respect to a top face of the part over the non-concave portion.

To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced.

Provided is a positive electrode active material. The positive electrode active material includes: a small-diameter active material having an average particle diameter of about 0.5 μm and a maximum particle diameter of less than about 1 μm; and a large-diameter active material having an average particle diameter of about 5 μm to about 20 μm and a maximum particle diameter of less than about 100 μm.