The invention relates to a
light emitting diode (LED) based on a
silicon substrate
through hole technology flip chip and a manufacturing process of the LED. The LED provided by the invention comprises a fluorescent layer, an n-type current expansion layer, a luminous layer, a p-type current expansion layer, a
metal light reflecting layer, a p-type
electrode bonding pad, a
metal through hole, an insulating layer, an n-type
electrode bonding pad, a
silicon substrate circuit layer, a
silicon substrate insulating layer, a silicon substrate, a silicon substrate negative
electrode, a silicon substrate negative electrode
metal through hole, a silicon substrate positive electrode metal through hole, a silicon substrate positive electrode bonding pad, a silicon substrate through hole insulating layer and a
chip sapphire substrate. Aiming at the structural defects existing in the current high-power LED, the invention provides the LED based on the silicon substrate
through hole technology flip chip and the manufacturing process of the LED, through hole electrodes are respectively manufactured on a flip LED
chip and a silicon substrate through an
etching technology or a
laser technology, and co-
crystallization welding is carried out so that packaging is finished. An LED device provided by the invention is free of gold
wire bonding, and the technology is beneficial to the development of large-scale
wafer level packaging and is used for improving the heat dissipation performance by through holes as well as improving the reliability in packaging an LED
chip.