Light emitting diode (LED) based on silicon substrate through hole technology flip chip and manufacturing process of LED

Abstract

The invention relates to a light emitting diode (LED) based on a silicon substrate through hole technology flip chip and a manufacturing process of the LED. The LED provided by the invention comprises a fluorescent layer, an n-type current expansion layer, a luminous layer, a p-type current expansion layer, a metal light reflecting layer, a p-type electrode bonding pad, a metal through hole, an insulating layer, an n-type electrode bonding pad, a silicon substrate circuit layer, a silicon substrate insulating layer, a silicon substrate, a silicon substrate negative electrode, a silicon substrate negative electrode metal through hole, a silicon substrate positive electrode metal through hole, a silicon substrate positive electrode bonding pad, a silicon substrate through hole insulating layer and a chip sapphire substrate. Aiming at the structural defects existing in the current high-power LED, the invention provides the LED based on the silicon substrate through hole technology flip chip and the manufacturing process of the LED, through hole electrodes are respectively manufactured on a flip LED chip and a silicon substrate through an etching technology or a laser technology, and co-crystallization welding is carried out so that packaging is finished. An LED device provided by the invention is free of gold wire bonding, and the technology is beneficial to the development of large-scale wafer level packaging and is used for improving the heat dissipation performance by through holes as well as improving the reliability in packaging an LED chip.

Description

technical field

[0001] The invention relates to a flip-chip light-emitting diode based on silicon substrate through-hole technology and its manufacturing process. In the invention, the flip-chip light-emitting diode chip and the silicon substrate with through-holes are directly bonded together through eutectic bonding without gold wire bonds. Combined, simple process and high reliability. Background technique

[0002] As a new generation of lighting source, LED has three advantages of high luminous efficiency, long life, and environmental protection. With the continuous improvement of epitaxy and packaging technology, LED has been gradually applied in the field of general lighting. At present, most of the LED failures are not caused by the failure of the LED chip itself, but by poor contact, shedding, thermal expansion and fracture of the packaged gold wire solder joints. With the development of high-integrated packaging trends, the requirements for reliability are also incr...

Images