39results about How to "Less photocurrent" patented technology

A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

The invention discloses a plane condensing board with a smooth lower plane surface, which has the technical key points that, an upper surface is divided into a plurality of rectangular blocks; each rectangular block is internally provided with at least a slope; the top of the slope is close to the center of the upper surface, whereas the bottom of the slope is far away from the center of the upper surface; the four rectangular blocks next to the center of the upper surface is provided with only one slope, while the other rectangular blocks are provided with two or more slopes; the tops and bottoms of the slopes in the same rectangular block are in a straight line and parallel to each other; all the tops and bottoms of the slopes in the same rectangular block are tangential with a virtual circle which takes the center of the upper surface as the circle center and the distance from the top and bottom of the slope to the circle center as the radius. Aiming at overcoming the disadvantagesof complicated production process and high cost of the traditional Fresnel lens, the invention provides a plane condensing board which is transparent, simple, practical, and cheap. Furthermore, the plane condensing board has the advantages of uniform condensation ray, good condensation effect and high condensation intensity.

The invention discloses an array optical address potential sensor chip and preparation method thereof. The array optical address potential sensor chip comprises silicone base chip and a plurality of sensitive zones are provided on the front face of the silicone base chip and a front face heavily doped layer is provided on the silicone base chip around the sensitive zones. An oxide layer is mounted above the sensitive zones and the front face heavily doped layer. A chip electrode is set on the thick oxide layer above the front face heavily doped layer. A back face heavily doped layer is set onthe back face of the silicone base chip and an aluminium electrode is set on the back face of the heavily doped layer. The silicone base chip between the sensitive zones is heavily doped and the thick oxide layer grows on the heavily doped layer and the chip electrode is set on the thick oxide layer. The chip can increase the degree of freedom of the coating sensitive membrane and the chip electrode can directly be connected with the external circuit to measure without other electrode. The back face heavily doped layer can form good ohmic contact with the aluminium electrode and silicone basechip. The preparation method uses standard semiconductor technology to ensure the consistency of the chip performance.

The invention discloses a glucose photo-electrochemical sensor as well as a preparation method and application thereof, and belongs to the technical field of glucose detection. The preparation methodof the glucose photo-electrochemical sensor comprises the following steps: (1) modifying semiconductor quantum dots on a substrate by self-assembly, the substrate being conductive glass, the semiconductor quantum dots being lead sulfide quantum dots; (2) dripping a nano silica solution onto the semiconductor quantum dot modified substrate obtained in step (1), and drying to obtain a composite filmmodified substrate; and (3) dripping a gold nanoparticle solution onto the composite film modified substrate, and drying to obtain the glucose photo-electrochemical sensor. The glucose photo-electrochemical sensor is low in cost, easy to prepare and high in detection sensitivity, and can be prepared in large scale.

The invention relates to a method for preparing a titanium oxide nanotube array-based photoelectrochemical detection electrode. In this method, Ag-TNTA is first prepared by modifying TNTA with Ag, and then metal silver and copper are deposited into Ag-TNTA by chemical co-deposition and hydrothermal reduction to prepare electrodes. The photoelectrochemical detection electrode prepared by the invention can be used not only for the detection of permanganate, but also for the detection of dopamine, and the testing process is simple, fast and pollution-free.

The invention relates to a semiconductor structure, which includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stack layer. The grid is configured on a substrate. The oxide channel layer and the gate are stacked on top of each other. The gate insulating layer is configured between the gate and the oxide channel layer. The source and the drain are disposed on one side of the oxide channel layer and parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stack layer is disposed on the substrate and includes multiple layers of first inorganic dielectric layers with a first refractive index and multiple layers of second inorganic dielectric layers with a second refractive index. The first and second inorganic dielectric layers are alternately stacked. At least one first inorganic dielectric layer directly covers portions of the source, the drain and the oxide channel layer. The first refractive index is smaller than the second refractive index.

The invention discloses a method for preparing a ratiometric broad-spectrum photoelectric immunosensor. Firstly, flake MoS is prepared. 2 material, increase the surface area of ​​the substrate, and then control the time in MoS by chemical deposition 2 CdS nanoparticles were deposited on it as a photoelectrode to achieve a stable photocurrent under visible light. Second, a three-dimensional ZnS‑Ag 2 S nanoflowers to immobilize secondary antibodies, not only Ag 2 Good energy level pairing between S and CdS can reduce the change signal of photocurrent, and HCl can release Zn after material treatment 2+ , can generate electrochemical differential pulse signal. The method of the present invention overcomes the uncertainty of single-signal detection, and creatively constructs a dual-signal immunosensor, that is, the photoelectric signal response of the photoelectric material and the electrical signal response of the electrochemical probe, which can realize simultaneous detection of three ochratoxins. Inspection, and can effectively reduce background noise and improve detection accuracy.

A thin film transistor includes a gate, an insulating layer, a channel layer, etching stop layer, an ohmic contact layer, a source and a drain. It contains said gate set on a substrate, insulating layer set on substrate and covering gate, channel layer set on partial insulating layer and corresponding gate, channel layer width less than or equal to less than or equal to gate width, etching stop layer set on partial channel layer and corresponding gate, etching stop layer width less than channel layer width, layer set on partial insulating layer and covering etching stop layer two ends channel layer two ends, source and drain set on ohmic contact layer for electrically connected with two ends through ohmic contact layer.

The present invention discloses a production method of the pixel structure, including the following steps: firstly providing one substrate with a pixel area; forming a metal layer, a gate insulation layer, and a semiconductor layer on the substrate, and patterning them by a first partly-adjustable or gray-adjustable light shield, to form a transistor pattern, a lower layer capacitance pattern and a lower layer circuit pattern; then, orderly forming a dielectric layer and one electrode layer to cover the said three patterns, then patterning them to expose some lower layer circuits, lower layer capacitances and onesource / drain area of the transistor pattern, and creating a second metal layer on them; then, patterning the second metal layer and the electrode layer by a second partly-adjustable or gray-adjustable light shield to form a upper layer circuit, a source / drain pattern and a upper layer capacitance, and part of the electrode layer constituting a pixel electrode.

The invention discloses a preparation method of a working electrode of a photoelectric sensor. The preparation method includes the following steps: cleaning an ITO electrode, and then drying to obtain an electrode A; dropwise adding a titanium dioxide colloidal solution on the surface of the electrode A, drying, then calcining, and cooling to obtain an electrode B; placing the electrode B in a poly(diallyldimethylammonium chloride) aqueous solution, soaking, cleaning, next placing in a carboxylated quantum dot colloidal solution, soaking, and cleaning to obtain an electrode C; fixing a probe DNA on the electrode C to obtain an electrode D; dropwise adding a gold nanoparticle-labelled target DNA onto the electrode D, and making the gold nanoparticle-labelled target DNA hybridized with the probe DNA, to obtain an electrode E; and activating the electrode E, fixing an organic dye sensitizing agent on the surface of the electrode E, and cleaning to obtain the working electrode of the photoelectric sensor. The invention also discloses the photoelectric sensor. The photoelectric sensor has the characteristics of high sensitivity, good specificity, simple and convenient detection method, and economic cost.