39results about How to "Less photocurrent" patented technology

A light sensor circuit based on direct connection of LEDs to I / O pins of a microcontroller. The LEDs are reverse biased and the parasitic junction capacitance is charged in an output mode. Then, the I / O pins placed into an high-impedance input mode. The time for the capacitance to be discharged by photoconduction caused by light incident on the LEDs is inversely proportional to an intensity of the incident light, and can be directly measured as the time required for the I / O pin to transition from fully-charged (5 volts) to a logic threshold level (1.7 volts). By using multiple LEDs, multiplexed between emissive and sensing modes, a wide variety of sensors can be constructed, particularly, when the LEDs emit light at different wavelength.

The invention provides a thin-film transistor and a producing method thereof. The thin-film transistor comprises a gate, an oxide channel layer, a gate insulation layer, a source, a drain and a dielectric layer. The gate is configured on a substrate. The oxide channel layer, which is configured on the substrate, stacks with the gate in an up and down manner. The material of the oxide channel layer comprises a metallic element and the content of the metallic element is in a gradient distribution along the depth direction of the oxide channel layer. The gate insulation layer is arranged between the gate and the oxide channel layer. The source and the drain which are parallelly configured are connected to the oxide channel layer. The dielectric layer is coated on the side, which is away from the substrate, of the source and the drain.

A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

The invention relates to a preparation method and application of a sandwich type photoelectrochemical sensor for detecting a prostate specific antigen (PSA). Nitrogen-doped graphene quantum dots (N-GQDs) and cadmium sulfide (CdS) quantum dots double-sensitized sea urchin-shaped titanium dioxide (TiO2) are used as photoactive materials to be immobilized on the surface of the conductive glass. The compound of electron holes (e<-> / h<+>) is effectively inhibited, a remarkable photocurrent signal is generated, and rich functional groups are provided for immobilizing PSA antibodies. A gold-carbon nanotube (Au / MWCNTs) nano-composite is adopted as a label of a second antibody, and exciton-plasma resonance (EPI) is generated according to different mechanisms. In the system, Au NPs are enabled to generate surface plasma resonance (SPR) in an optical excitation state. Along with the energy resonance transfer (ET) process, the photocurrent intensity is reduced to a certain extent, and the sensitivity of the sensor is improved. In addition, Au / MWCNTs have a large surface area and biocompatibility. The loading capacity of the second antibody is increased, due to the fact that the steric hindrance effect hinders electron transfer, the photocurrent is reduced, the sensitivity of the sensor is further improved, specific detection of the prostate specific antigen is achieved, a novel and feasible detection method is provided for early detection of PSA, and the prostate specific antigen sensor has potential application prospects in clinic.

The invention discloses a double-injection multiplication type organic photoelectric detector and a preparation method thereof, and the double-injection multiplication type organic photoelectric detector comprises a glass substrate, wherein the surface of the glass substrate is plated with an ITO electrode layer, and the ITO electrode layer is sequentially coated with an anode buffer layer, an active layer and an Al electrode layer from bottom to top; the anode buffer layer is made of C60, the active layer is made of a mixture of P3HT, PC61BM and C70, and the P3HT, the PC61BM and the C70 forma bulk heterojunction. C60 is added into the device to serve as a hole blocking layer, and meanwhile, a small amount of C70 material is doped into an active layer to serve as an electron trap, so tunneling injection of holes is increased, external quantum efficiency is improved, photocurrent is reduced, and photoelectric performance of the detector is improved; the working voltage is small, and the circuit can work under a small bias voltage of 1V; the preparation method of the double-injection multiplication type organic photoelectric detector is simple to operate and easy to implement.

The invention discloses an amorphous Ga2O3 photoelectric detector and a preparation method and a performance improvement method thereof. The amorphous Ga2O3 photoelectric detector comprises a substrate, a hydrogen-doped amorphous Ga2O3 thin film active layer deposited on the surface of the substrate and an electrode arranged on the hydrogen-doped amorphous Ga2O3 thin film active layer, wherein thehydrogen-doped amorphous Ga2O3 thin film active layer is an amorphous thin film prepared by adopting a vacuum deposition method in a hydrogen-containing atmosphere at the temperature of 20-400 DEG C;the vacuum deposition method comprises any one of magnetron sputtering, pulse laser deposition, electron beam deposition and chemical vapor deposition.

The invention discloses a plane condensing board with a smooth lower plane surface, which has the technical key points that, an upper surface is divided into a plurality of rectangular blocks; each rectangular block is internally provided with at least a slope; the top of the slope is close to the center of the upper surface, whereas the bottom of the slope is far away from the center of the upper surface; the four rectangular blocks next to the center of the upper surface is provided with only one slope, while the other rectangular blocks are provided with two or more slopes; the tops and bottoms of the slopes in the same rectangular block are in a straight line and parallel to each other; all the tops and bottoms of the slopes in the same rectangular block are tangential with a virtual circle which takes the center of the upper surface as the circle center and the distance from the top and bottom of the slope to the circle center as the radius. Aiming at overcoming the disadvantagesof complicated production process and high cost of the traditional Fresnel lens, the invention provides a plane condensing board which is transparent, simple, practical, and cheap. Furthermore, the plane condensing board has the advantages of uniform condensation ray, good condensation effect and high condensation intensity.

The invention discloses an array optical address potential sensor chip and preparation method thereof. The array optical address potential sensor chip comprises silicone base chip and a plurality of sensitive zones are provided on the front face of the silicone base chip and a front face heavily doped layer is provided on the silicone base chip around the sensitive zones. An oxide layer is mounted above the sensitive zones and the front face heavily doped layer. A chip electrode is set on the thick oxide layer above the front face heavily doped layer. A back face heavily doped layer is set onthe back face of the silicone base chip and an aluminium electrode is set on the back face of the heavily doped layer. The silicone base chip between the sensitive zones is heavily doped and the thick oxide layer grows on the heavily doped layer and the chip electrode is set on the thick oxide layer. The chip can increase the degree of freedom of the coating sensitive membrane and the chip electrode can directly be connected with the external circuit to measure without other electrode. The back face heavily doped layer can form good ohmic contact with the aluminium electrode and silicone basechip. The preparation method uses standard semiconductor technology to ensure the consistency of the chip performance.

The invention discloses a glucose photo-electrochemical sensor as well as a preparation method and application thereof, and belongs to the technical field of glucose detection. The preparation methodof the glucose photo-electrochemical sensor comprises the following steps: (1) modifying semiconductor quantum dots on a substrate by self-assembly, the substrate being conductive glass, the semiconductor quantum dots being lead sulfide quantum dots; (2) dripping a nano silica solution onto the semiconductor quantum dot modified substrate obtained in step (1), and drying to obtain a composite filmmodified substrate; and (3) dripping a gold nanoparticle solution onto the composite film modified substrate, and drying to obtain the glucose photo-electrochemical sensor. The glucose photo-electrochemical sensor is low in cost, easy to prepare and high in detection sensitivity, and can be prepared in large scale.

The invention relates to a method for preparing a titanium oxide nanotube array-based photoelectrochemical detection electrode. In this method, Ag-TNTA is first prepared by modifying TNTA with Ag, and then metal silver and copper are deposited into Ag-TNTA by chemical co-deposition and hydrothermal reduction to prepare electrodes. The photoelectrochemical detection electrode prepared by the invention can be used not only for the detection of permanganate, but also for the detection of dopamine, and the testing process is simple, fast and pollution-free.

The invention relates to a semiconductor structure, which includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stack layer. The grid is configured on a substrate. The oxide channel layer and the gate are stacked on top of each other. The gate insulating layer is configured between the gate and the oxide channel layer. The source and the drain are disposed on one side of the oxide channel layer and parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stack layer is disposed on the substrate and includes multiple layers of first inorganic dielectric layers with a first refractive index and multiple layers of second inorganic dielectric layers with a second refractive index. The first and second inorganic dielectric layers are alternately stacked. At least one first inorganic dielectric layer directly covers portions of the source, the drain and the oxide channel layer. The first refractive index is smaller than the second refractive index.

The invention discloses a method for preparing a ratiometric broad-spectrum photoelectric immunosensor. Firstly, flake MoS is prepared. 2 material, increase the surface area of ​​the substrate, and then control the time in MoS by chemical deposition 2 CdS nanoparticles were deposited on it as a photoelectrode to achieve a stable photocurrent under visible light. Second, a three-dimensional ZnS‑Ag 2 S nanoflowers to immobilize secondary antibodies, not only Ag 2 Good energy level pairing between S and CdS can reduce the change signal of photocurrent, and HCl can release Zn after material treatment 2+ , can generate electrochemical differential pulse signal. The method of the present invention overcomes the uncertainty of single-signal detection, and creatively constructs a dual-signal immunosensor, that is, the photoelectric signal response of the photoelectric material and the electrical signal response of the electrochemical probe, which can realize simultaneous detection of three ochratoxins. Inspection, and can effectively reduce background noise and improve detection accuracy.

A thin film transistor includes a gate, an insulating layer, a channel layer, etching stop layer, an ohmic contact layer, a source and a drain. It contains said gate set on a substrate, insulating layer set on substrate and covering gate, channel layer set on partial insulating layer and corresponding gate, channel layer width less than or equal to less than or equal to gate width, etching stop layer set on partial channel layer and corresponding gate, etching stop layer width less than channel layer width, layer set on partial insulating layer and covering etching stop layer two ends channel layer two ends, source and drain set on ohmic contact layer for electrically connected with two ends through ohmic contact layer.

The invention discloses an APD protection circuit and device. The APD protection circuit comprises a voltage output circuit, a current-limiting resistor, a current detection circuit and a rapid discharge circuit, wherein an input end of the voltage output circuit is connected with a system power supply end, an output end of the voltage output circuit is connected with an input end of the current detection circuit through the current-limiting resistor, an output end of the current detection circuit is connected with a negative electrode of an APD, a positive electrode of the APD is grounded, the input end of the current detection circuit is grounded through the rapid discharge circuit, and a signal output end of the current detection circuit is connected with a controlled end of the rapid discharge circuit; the current detection circuit is used for detecting light current of the APD and sending a corresponding direct-current voltage signal; and the rapid discharge circuit is used for connecting the quick discharge circuit to the rear end of the current-limiting resistor to carry out bypass discharge when the direct-current voltage signal reaches a conduction threshold value. According to the APD protection circuit and the device, rapid discharge can be carried out when the received optical power is too large, the APD is prevented from being damaged by relatively large optical current, overload protection of the APD is realized, and normal operation of the APD can be maintained.

The present invention discloses a production method of the pixel structure, including the following steps: firstly providing one substrate with a pixel area; forming a metal layer, a gate insulation layer, and a semiconductor layer on the substrate, and patterning them by a first partly-adjustable or gray-adjustable light shield, to form a transistor pattern, a lower layer capacitance pattern and a lower layer circuit pattern; then, orderly forming a dielectric layer and one electrode layer to cover the said three patterns, then patterning them to expose some lower layer circuits, lower layer capacitances and onesource / drain area of the transistor pattern, and creating a second metal layer on them; then, patterning the second metal layer and the electrode layer by a second partly-adjustable or gray-adjustable light shield to form a upper layer circuit, a source / drain pattern and a upper layer capacitance, and part of the electrode layer constituting a pixel electrode.

The invention discloses a preparation method of a working electrode of a photoelectric sensor. The preparation method includes the following steps: cleaning an ITO electrode, and then drying to obtain an electrode A; dropwise adding a titanium dioxide colloidal solution on the surface of the electrode A, drying, then calcining, and cooling to obtain an electrode B; placing the electrode B in a poly(diallyldimethylammonium chloride) aqueous solution, soaking, cleaning, next placing in a carboxylated quantum dot colloidal solution, soaking, and cleaning to obtain an electrode C; fixing a probe DNA on the electrode C to obtain an electrode D; dropwise adding a gold nanoparticle-labelled target DNA onto the electrode D, and making the gold nanoparticle-labelled target DNA hybridized with the probe DNA, to obtain an electrode E; and activating the electrode E, fixing an organic dye sensitizing agent on the surface of the electrode E, and cleaning to obtain the working electrode of the photoelectric sensor. The invention also discloses the photoelectric sensor. The photoelectric sensor has the characteristics of high sensitivity, good specificity, simple and convenient detection method, and economic cost.