39results about How to "Less photocurrent" patented technology

A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

The invention discloses an array optical address potential sensor chip and preparation method thereof. The array optical address potential sensor chip comprises silicone base chip and a plurality of sensitive zones are provided on the front face of the silicone base chip and a front face heavily doped layer is provided on the silicone base chip around the sensitive zones. An oxide layer is mounted above the sensitive zones and the front face heavily doped layer. A chip electrode is set on the thick oxide layer above the front face heavily doped layer. A back face heavily doped layer is set onthe back face of the silicone base chip and an aluminium electrode is set on the back face of the heavily doped layer. The silicone base chip between the sensitive zones is heavily doped and the thick oxide layer grows on the heavily doped layer and the chip electrode is set on the thick oxide layer. The chip can increase the degree of freedom of the coating sensitive membrane and the chip electrode can directly be connected with the external circuit to measure without other electrode. The back face heavily doped layer can form good ohmic contact with the aluminium electrode and silicone basechip. The preparation method uses standard semiconductor technology to ensure the consistency of the chip performance.

The invention relates to a semiconductor structure, which includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stack layer. The grid is configured on a substrate. The oxide channel layer and the gate are stacked on top of each other. The gate insulating layer is configured between the gate and the oxide channel layer. The source and the drain are disposed on one side of the oxide channel layer and parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stack layer is disposed on the substrate and includes multiple layers of first inorganic dielectric layers with a first refractive index and multiple layers of second inorganic dielectric layers with a second refractive index. The first and second inorganic dielectric layers are alternately stacked. At least one first inorganic dielectric layer directly covers portions of the source, the drain and the oxide channel layer. The first refractive index is smaller than the second refractive index.

A thin film transistor includes a gate, an insulating layer, a channel layer, etching stop layer, an ohmic contact layer, a source and a drain. It contains said gate set on a substrate, insulating layer set on substrate and covering gate, channel layer set on partial insulating layer and corresponding gate, channel layer width less than or equal to less than or equal to gate width, etching stop layer set on partial channel layer and corresponding gate, etching stop layer width less than channel layer width, layer set on partial insulating layer and covering etching stop layer two ends channel layer two ends, source and drain set on ohmic contact layer for electrically connected with two ends through ohmic contact layer.

The invention discloses a preparation method of a working electrode of a photoelectric sensor. The preparation method includes the following steps: cleaning an ITO electrode, and then drying to obtain an electrode A; dropwise adding a titanium dioxide colloidal solution on the surface of the electrode A, drying, then calcining, and cooling to obtain an electrode B; placing the electrode B in a poly(diallyldimethylammonium chloride) aqueous solution, soaking, cleaning, next placing in a carboxylated quantum dot colloidal solution, soaking, and cleaning to obtain an electrode C; fixing a probe DNA on the electrode C to obtain an electrode D; dropwise adding a gold nanoparticle-labelled target DNA onto the electrode D, and making the gold nanoparticle-labelled target DNA hybridized with the probe DNA, to obtain an electrode E; and activating the electrode E, fixing an organic dye sensitizing agent on the surface of the electrode E, and cleaning to obtain the working electrode of the photoelectric sensor. The invention also discloses the photoelectric sensor. The photoelectric sensor has the characteristics of high sensitivity, good specificity, simple and convenient detection method, and economic cost.